{"id":"https://openalex.org/W1994065394","doi":"https://doi.org/10.1109/jssc.2013.2253412","title":"A 1 Mb Nonvolatile Embedded Memory Using 4T2MTJ Cell With 32 b Fine-Grained Power Gating Scheme","display_name":"A 1 Mb Nonvolatile Embedded Memory Using 4T2MTJ Cell With 32 b Fine-Grained Power Gating Scheme","publication_year":2013,"publication_date":"2013-05-31","ids":{"openalex":"https://openalex.org/W1994065394","doi":"https://doi.org/10.1109/jssc.2013.2253412","mag":"1994065394"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2013.2253412","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2013.2253412","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5040832283","display_name":"Takashi Ohsawa","orcid":"https://orcid.org/0000-0002-8409-1792"},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]},{"id":"https://openalex.org/I4210125833","display_name":"Spintronics Research Network of Japan","ror":"https://ror.org/03bbyax37","country_code":"JP","type":"facility","lineage":["https://openalex.org/I201537933","https://openalex.org/I203951103","https://openalex.org/I4210125833","https://openalex.org/I74801974","https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takashi Ohsawa","raw_affiliation_strings":["Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan","[Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan","institution_ids":["https://openalex.org/I4210125833","https://openalex.org/I201537933"]},{"raw_affiliation_string":"[Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan]","institution_ids":["https://openalex.org/I4210125833","https://openalex.org/I201537933"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004580322","display_name":"Hiroki Koike","orcid":"https://orcid.org/0000-0002-2494-7595"},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]},{"id":"https://openalex.org/I4210125833","display_name":"Spintronics Research Network of Japan","ror":"https://ror.org/03bbyax37","country_code":"JP","type":"facility","lineage":["https://openalex.org/I201537933","https://openalex.org/I203951103","https://openalex.org/I4210125833","https://openalex.org/I74801974","https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroki Koike","raw_affiliation_strings":["Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan","[Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan","institution_ids":["https://openalex.org/I4210125833","https://openalex.org/I201537933"]},{"raw_affiliation_string":"[Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan]","institution_ids":["https://openalex.org/I4210125833","https://openalex.org/I201537933"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046409450","display_name":"S. Miura","orcid":"https://orcid.org/0000-0001-5603-3205"},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Sadahiko Miura","raw_affiliation_strings":["NEC Corporation, Green Platform Research Laboratories, Tsukuba, Ibaraki, Japan","Green Platform Research Laboratories, NEC Corporation, Tsukuba, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NEC Corporation, Green Platform Research Laboratories, Tsukuba, Ibaraki, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"Green Platform Research Laboratories, NEC Corporation, Tsukuba, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035295738","display_name":"H. Honjo","orcid":"https://orcid.org/0000-0002-5742-108X"},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroaki Honjo","raw_affiliation_strings":["NEC Corporation, Green Platform Research Laboratories, Tsukuba, Ibaraki, Japan","Green Platform Research Laboratories, NEC Corporation, Tsukuba, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NEC Corporation, Green Platform Research Laboratories, Tsukuba, Ibaraki, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"Green Platform Research Laboratories, NEC Corporation, Tsukuba, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Keizo Kinoshita","orcid":null},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]},{"id":"https://openalex.org/I4210125833","display_name":"Spintronics Research Network of Japan","ror":"https://ror.org/03bbyax37","country_code":"JP","type":"facility","lineage":["https://openalex.org/I201537933","https://openalex.org/I203951103","https://openalex.org/I4210125833","https://openalex.org/I74801974","https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Keizo Kinoshita","raw_affiliation_strings":["Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan","[Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan","institution_ids":["https://openalex.org/I4210125833","https://openalex.org/I201537933"]},{"raw_affiliation_string":"[Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan]","institution_ids":["https://openalex.org/I4210125833","https://openalex.org/I201537933"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012267283","display_name":"Shoji Ikeda","orcid":"https://orcid.org/0000-0002-3925-4089"},"institutions":[{"id":"https://openalex.org/I103605164","display_name":"Tohoku Institute of Technology","ror":"https://ror.org/01phqre83","country_code":"JP","type":"education","lineage":["https://openalex.org/I103605164"]},{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]},{"id":"https://openalex.org/I4210125833","display_name":"Spintronics Research Network of Japan","ror":"https://ror.org/03bbyax37","country_code":"JP","type":"facility","lineage":["https://openalex.org/I201537933","https://openalex.org/I203951103","https://openalex.org/I4210125833","https://openalex.org/I74801974","https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shoji Ikeda","raw_affiliation_strings":["Tohoku Daigaku, Sendai, Miyagi, JP","[Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tohoku Daigaku, Sendai, Miyagi, JP","institution_ids":["https://openalex.org/I103605164"]},{"raw_affiliation_string":"[Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan]","institution_ids":["https://openalex.org/I4210125833","https://openalex.org/I201537933"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062434040","display_name":"Takahiro Hanyu","orcid":"https://orcid.org/0000-0002-4397-8290"},"institutions":[{"id":"https://openalex.org/I103605164","display_name":"Tohoku Institute of Technology","ror":"https://ror.org/01phqre83","country_code":"JP","type":"education","lineage":["https://openalex.org/I103605164"]},{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]},{"id":"https://openalex.org/I4210125833","display_name":"Spintronics Research Network of Japan","ror":"https://ror.org/03bbyax37","country_code":"JP","type":"facility","lineage":["https://openalex.org/I201537933","https://openalex.org/I203951103","https://openalex.org/I4210125833","https://openalex.org/I74801974","https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takahiro Hanyu","raw_affiliation_strings":["Tohoku Daigaku, Sendai, Miyagi, JP","[Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tohoku Daigaku, Sendai, Miyagi, JP","institution_ids":["https://openalex.org/I103605164"]},{"raw_affiliation_string":"[Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan]","institution_ids":["https://openalex.org/I4210125833","https://openalex.org/I201537933"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081983682","display_name":"Hideo Ohno","orcid":"https://orcid.org/0000-0001-9688-8259"},"institutions":[{"id":"https://openalex.org/I103605164","display_name":"Tohoku Institute of Technology","ror":"https://ror.org/01phqre83","country_code":"JP","type":"education","lineage":["https://openalex.org/I103605164"]},{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]},{"id":"https://openalex.org/I4210125833","display_name":"Spintronics Research Network of Japan","ror":"https://ror.org/03bbyax37","country_code":"JP","type":"facility","lineage":["https://openalex.org/I201537933","https://openalex.org/I203951103","https://openalex.org/I4210125833","https://openalex.org/I74801974","https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hideo Ohno","raw_affiliation_strings":["Tohoku Daigaku, Sendai, Miyagi, JP","[Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tohoku Daigaku, Sendai, Miyagi, JP","institution_ids":["https://openalex.org/I103605164"]},{"raw_affiliation_string":"[Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan]","institution_ids":["https://openalex.org/I4210125833","https://openalex.org/I201537933"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5083722186","display_name":"Tetsuo Endoh","orcid":"https://orcid.org/0000-0002-5583-3283"},"institutions":[{"id":"https://openalex.org/I103605164","display_name":"Tohoku Institute of Technology","ror":"https://ror.org/01phqre83","country_code":"JP","type":"education","lineage":["https://openalex.org/I103605164"]},{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tetsuo Endoh","raw_affiliation_strings":["Tohoku Daigaku, Sendai, Miyagi, JP","Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tohoku Daigaku, Sendai, Miyagi, JP","institution_ids":["https://openalex.org/I103605164"]},{"raw_affiliation_string":"Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan#TAB#","institution_ids":["https://openalex.org/I201537933"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":9,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":7.4412,"has_fulltext":false,"cited_by_count":82,"citation_normalized_percentile":{"value":0.97519109,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":100},"biblio":{"volume":"48","issue":"6","first_page":"1511","last_page":"1520"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/standby-power","display_name":"Standby power","score":0.6672980189323425},{"id":"https://openalex.org/keywords/power-gating","display_name":"Power gating","score":0.6633175611495972},{"id":"https://openalex.org/keywords/spin-transfer-torque","display_name":"Spin-transfer torque","score":0.6626724004745483},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.643241286277771},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.6299458146095276},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5792672038078308},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5615856051445007},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.5396438241004944},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.5169107913970947},{"id":"https://openalex.org/keywords/back-end-of-line","display_name":"Back end of line","score":0.43444982171058655},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.42952775955200195},{"id":"https://openalex.org/keywords/macro","display_name":"Macro","score":0.4282562732696533},{"id":"https://openalex.org/keywords/tunnel-magnetoresistance","display_name":"Tunnel magnetoresistance","score":0.42688053846359253},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.42675432562828064},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.38937920331954956},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.37891751527786255},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.33391010761260986},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.23607394099235535},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.21260201930999756},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.16068142652511597},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.13119658827781677},{"id":"https://openalex.org/keywords/acoustics","display_name":"Acoustics","score":0.07639986276626587}],"concepts":[{"id":"https://openalex.org/C7140552","wikidata":"https://www.wikidata.org/wiki/Q1366402","display_name":"Standby power","level":3,"score":0.6672980189323425},{"id":"https://openalex.org/C2780700455","wikidata":"https://www.wikidata.org/wiki/Q7236515","display_name":"Power gating","level":4,"score":0.6633175611495972},{"id":"https://openalex.org/C609986","wikidata":"https://www.wikidata.org/wiki/Q844840","display_name":"Spin-transfer torque","level":4,"score":0.6626724004745483},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.643241286277771},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.6299458146095276},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5792672038078308},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5615856051445007},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.5396438241004944},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.5169107913970947},{"id":"https://openalex.org/C2776628375","wikidata":"https://www.wikidata.org/wiki/Q4839229","display_name":"Back end of line","level":3,"score":0.43444982171058655},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.42952775955200195},{"id":"https://openalex.org/C166955791","wikidata":"https://www.wikidata.org/wiki/Q629579","display_name":"Macro","level":2,"score":0.4282562732696533},{"id":"https://openalex.org/C56202322","wikidata":"https://www.wikidata.org/wiki/Q1884383","display_name":"Tunnel magnetoresistance","level":3,"score":0.42688053846359253},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.42675432562828064},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.38937920331954956},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.37891751527786255},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.33391010761260986},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23607394099235535},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.21260201930999756},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.16068142652511597},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.13119658827781677},{"id":"https://openalex.org/C24890656","wikidata":"https://www.wikidata.org/wiki/Q82811","display_name":"Acoustics","level":1,"score":0.07639986276626587},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.0},{"id":"https://openalex.org/C32546565","wikidata":"https://www.wikidata.org/wiki/Q856711","display_name":"Magnetization","level":3,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2013.2253412","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2013.2253412","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8100000023841858}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W1511351334","https://openalex.org/W1550853505","https://openalex.org/W1978154694","https://openalex.org/W1986876038","https://openalex.org/W2010561573","https://openalex.org/W2031337541","https://openalex.org/W2050565026","https://openalex.org/W2051846227","https://openalex.org/W2060175859","https://openalex.org/W2094797776","https://openalex.org/W2096445739","https://openalex.org/W2107372449","https://openalex.org/W2120676354","https://openalex.org/W2129144647","https://openalex.org/W2131862714","https://openalex.org/W2152506767","https://openalex.org/W2159904000","https://openalex.org/W2162020806","https://openalex.org/W2327379784","https://openalex.org/W3098517937","https://openalex.org/W4244386272","https://openalex.org/W4249082054","https://openalex.org/W6633111744","https://openalex.org/W6644613506","https://openalex.org/W6684149499"],"related_works":["https://openalex.org/W2075172982","https://openalex.org/W3013845316","https://openalex.org/W2783501501","https://openalex.org/W2282162811","https://openalex.org/W2185135835","https://openalex.org/W2083171629","https://openalex.org/W2532126347","https://openalex.org/W3140192626","https://openalex.org/W2140331496","https://openalex.org/W2136873993"],"abstract_inverted_index":{"<?Pub":[0],"Dtl=\"\"?>":[1],"A":[2],"1":[3,107],"Mb":[4,108],"nonvolatile":[5],"embedded":[6],"memory":[7],"using":[8],"a":[9,42,50],"four":[10],"transistor":[11],"and":[12,23,31,78,135],"two":[13],"spin-transfer-torque":[14],"(STT)":[15],"magnetic":[16],"tunnel":[17,141],"junction":[18],"(MTJ)":[19],"cell":[20,86],"is":[21,87,111,161],"designed":[22],"fabricated":[24],"to":[25,55,89,164,179],"demonstrate":[26],"its":[27,140],"zero":[28],"standby":[29,58],"power":[30,35,51,59,68],"high":[32],"performance.":[33],"The":[34,81,104,155],"supply":[36],"voltages":[37],"of":[38,106,115,149,158,172,182],"32":[39],"cells":[40],"along":[41],"word":[43],"line":[44,52],"(WL)":[45],"are":[46],"controlled":[47],"simultaneously":[48],"by":[49,137],"(PL)":[53],"driver":[54],"eliminate":[56],"the":[57,63,73,85,95,116,122,128,147,150,159,173,180,186],"without":[60],"impact":[61],"on":[62],"access":[64],"time.":[65],"This":[66],"fine-grained":[67],"gating":[69],"scheme":[70],"also":[71,162],"optimizes":[72],"trade-off":[74],"between":[75],"macro":[76,109,160],"size":[77,110],"operation":[79,156],"power.":[80],"butterfly":[82],"curve":[83],"for":[84,101],"measured":[88],"be":[90,165],"asymmetric":[91],"as":[92,185],"predicted,":[93],"enhancing":[94],"cell's":[96],"static":[97],"noise":[98],"margin":[99],"(SNM)":[100],"data":[102],"retention.":[103],"scaling":[105],"compared":[112],"with":[113,146],"that":[114,121,171],"6T":[117,174],"SRAM":[118,175],"counterpart,":[119],"indicating":[120],"former":[123],"will":[124],"become":[125],"smaller":[126],"than":[127],"latter":[129],"at":[130],"45":[131],"nm":[132],"technology":[133],"node":[134],"beyond":[136],"moderately":[138],"thinning":[139],"dielectrics":[142],"(MgO)":[143],"in":[144],"accordance":[145],"shrink":[148],"MTJ's":[151],"cross":[152],"sectional":[153],"area.":[154],"current":[157],"shown":[163],"almost":[166],"unchanged":[167],"over":[168],"generations,":[169],"while":[170],"increases":[176],"exponentially":[177],"due":[178],"degradation":[181],"MOSFET":[183],"off-current":[184],"device":[187],"scales.":[188]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":8},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":7},{"year":2017,"cited_by_count":17},{"year":2016,"cited_by_count":9},{"year":2015,"cited_by_count":15},{"year":2014,"cited_by_count":7}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}