{"id":"https://openalex.org/W1774366795","doi":"https://doi.org/10.1109/jssc.2012.2185341","title":"A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface","display_name":"A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface","publication_year":2012,"publication_date":"2012-02-13","ids":{"openalex":"https://openalex.org/W1774366795","doi":"https://doi.org/10.1109/jssc.2012.2185341","mag":"1774366795"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2012.2185341","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2012.2185341","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5079981091","display_name":"Chulbum Kim","orcid":"https://orcid.org/0000-0002-6391-9423"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Chulbum Kim","raw_affiliation_strings":["Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","Flash Memory Design Team, Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Flash Memory Design Team, Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103409015","display_name":"Jinho Ryu","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jinho Ryu","raw_affiliation_strings":["Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","Flash Memory Design Team, Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Flash Memory Design Team, Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010085296","display_name":"Taesung Lee","orcid":"https://orcid.org/0000-0003-1015-7004"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Taesung Lee","raw_affiliation_strings":["Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","Flash Memory Design Team, Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Flash Memory Design Team, Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030629726","display_name":"Hyeonggon Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyunggon Kim","raw_affiliation_strings":["Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","Flash Memory Design Team, Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Flash Memory Design Team, Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027303478","display_name":"Jeawoo Lim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jaewoo Lim","raw_affiliation_strings":["Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","Flash Memory Design Team, Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Flash Memory Design Team, Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102198369","display_name":"Jaeyong Jeong","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jaeyong Jeong","raw_affiliation_strings":["Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","Flash Memory Design Team, Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Flash Memory Design Team, Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078801521","display_name":"Seonghwan Seo","orcid":"https://orcid.org/0000-0002-4090-7825"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seonghwan Seo","raw_affiliation_strings":["Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","Flash Memory Design Team, Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Flash Memory Design Team, Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006617696","display_name":"Hongsoo Jeon","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hongsoo Jeon","raw_affiliation_strings":["Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","Flash Memory Design Team, Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Flash Memory Design Team, Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028364851","display_name":"Bokeun Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Bokeun Kim","raw_affiliation_strings":["Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","Flash Memory Design Team, Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Flash Memory Design Team, Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089827354","display_name":"Inyoul Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Inyoul Lee","raw_affiliation_strings":["Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","Flash Memory Design Team, Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Flash Memory Design Team, Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054782129","display_name":"Dooseop Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dooseop Lee","raw_affiliation_strings":["Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","Flash Memory Design Team, Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Flash Memory Design Team, Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047840419","display_name":"Pansuk Kwak","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Pansuk Kwak","raw_affiliation_strings":["Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","Flash Memory Design Team, Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Flash Memory Design Team, Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080525392","display_name":"Seong-Soon Cho","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seongsoon Cho","raw_affiliation_strings":["Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","Flash Memory Design Team, Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Flash Memory Design Team, Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050227164","display_name":"Yong-Sik Yim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yongsik Yim","raw_affiliation_strings":["Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","Flash Memory Design Team, Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Flash Memory Design Team, Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074361220","display_name":"Changhyun Cho","orcid":"https://orcid.org/0000-0002-9879-1749"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Changhyun Cho","raw_affiliation_strings":["Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","Flash Memory Design Team, Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Flash Memory Design Team, Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103956821","display_name":"Woopyo Jeong","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Woopyo Jeong","raw_affiliation_strings":["Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","Flash Memory Design Team, Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Flash Memory Design Team, Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Kwangil Park","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kwangil Park","raw_affiliation_strings":["Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","Flash Memory Design Team, Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Flash Memory Design Team, Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109158104","display_name":"Jin-Man Han","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jin-Man Han","raw_affiliation_strings":["Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","Flash Memory Design Team, Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Flash Memory Design Team, Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Duheon Song","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Duheon Song","raw_affiliation_strings":["Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","Flash Memory Design Team, Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Flash Memory Design Team, Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112306635","display_name":"Kye-Hyun Kyung","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyehyun Kyung","raw_affiliation_strings":["Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","Flash Memory Design Team, Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Flash Memory Design Team, Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111545437","display_name":"Young-Ho Lim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Young-Ho Lim","raw_affiliation_strings":["Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","Flash Memory Design Team, Samsung Electronics, Hwasung, Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Flash Memory Design Team, Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5112318178","display_name":"Young-Hyun Jun","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Young-Hyun Jun","raw_affiliation_strings":["Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Division, Samsung Electronics Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":22,"corresponding_author_ids":["https://openalex.org/A5079981091"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":3.0085,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.91065559,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"47","issue":"4","first_page":"981","last_page":"989"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12162","display_name":"Cellular Automata and Applications","score":0.9922000169754028,"subfield":{"id":"https://openalex.org/subfields/1703","display_name":"Computational Theory and Mathematics"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11269","display_name":"Algorithms and Data Compression","score":0.9764999747276306,"subfield":{"id":"https://openalex.org/subfields/1702","display_name":"Artificial Intelligence"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.7578755617141724},{"id":"https://openalex.org/keywords/nand-gate","display_name":"NAND gate","score":0.6823468208312988},{"id":"https://openalex.org/keywords/asynchronous-communication","display_name":"Asynchronous communication","score":0.5495617389678955},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.5387488603591919},{"id":"https://openalex.org/keywords/interface","display_name":"Interface (matter)","score":0.5110536813735962},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.4702906608581543},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.46678268909454346},{"id":"https://openalex.org/keywords/flash","display_name":"Flash (photography)","score":0.44228124618530273},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.413382351398468},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.41201484203338623},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.27887511253356934},{"id":"https://openalex.org/keywords/operating-system","display_name":"Operating system","score":0.21964171528816223}],"concepts":[{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.7578755617141724},{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.6823468208312988},{"id":"https://openalex.org/C151319957","wikidata":"https://www.wikidata.org/wiki/Q752739","display_name":"Asynchronous communication","level":2,"score":0.5495617389678955},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.5387488603591919},{"id":"https://openalex.org/C113843644","wikidata":"https://www.wikidata.org/wiki/Q901882","display_name":"Interface (matter)","level":4,"score":0.5110536813735962},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.4702906608581543},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.46678268909454346},{"id":"https://openalex.org/C2777526259","wikidata":"https://www.wikidata.org/wiki/Q221836","display_name":"Flash (photography)","level":2,"score":0.44228124618530273},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.413382351398468},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.41201484203338623},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.27887511253356934},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.21964171528816223},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C129307140","wikidata":"https://www.wikidata.org/wiki/Q6795880","display_name":"Maximum bubble pressure method","level":3,"score":0.0},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C157915830","wikidata":"https://www.wikidata.org/wiki/Q2928001","display_name":"Bubble","level":2,"score":0.0},{"id":"https://openalex.org/C153349607","wikidata":"https://www.wikidata.org/wiki/Q36649","display_name":"Visual arts","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C142362112","wikidata":"https://www.wikidata.org/wiki/Q735","display_name":"Art","level":0,"score":0.0},{"id":"https://openalex.org/C31258907","wikidata":"https://www.wikidata.org/wiki/Q1301371","display_name":"Computer network","level":1,"score":0.0},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/jssc.2012.2185341","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2012.2185341","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},{"id":"mag:1774366795","is_oa":false,"landing_page_url":"http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5986102","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":null,"raw_source_name":"Symposium on VLSI Circuits","raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.699999988079071}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1909605490","https://openalex.org/W2074968498","https://openalex.org/W2134810176","https://openalex.org/W2164177293","https://openalex.org/W6647057901"],"related_works":["https://openalex.org/W2051737777","https://openalex.org/W2013759772","https://openalex.org/W1985604842","https://openalex.org/W2064544318","https://openalex.org/W1979804960","https://openalex.org/W2035056809","https://openalex.org/W2069636903","https://openalex.org/W2104714982","https://openalex.org/W2124653743","https://openalex.org/W2134075114","https://openalex.org/W1967457923","https://openalex.org/W2168742572","https://openalex.org/W2017159197","https://openalex.org/W1534028950","https://openalex.org/W2789219835","https://openalex.org/W1480073886","https://openalex.org/W3016988062","https://openalex.org/W2031964120","https://openalex.org/W2023211675","https://openalex.org/W2787980581"],"abstract_inverted_index":{"A":[0],"monolithic":[1],"64":[2],"Gb":[3],"MLC":[4],"NAND":[5],"flash":[6],"based":[7],"on":[8],"21":[9],"<formula":[10],"formulatype=\"inline\"":[11],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[12],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">":[13],"<tex":[14],"Notation=\"TeX\">$~$</tex></formula>":[15],"nm":[16],"process":[17],"technology":[18],"has":[19],"been":[20,74],"developed.":[21,75],"The":[22],"device":[23],"consists":[24],"of":[25,32,54],"4-plane":[26],"arrays":[27],"and":[28,60,67],"provides":[29],"page":[30],"size":[31],"up":[33,49],"to":[34,50],"32":[35],"KB.":[36],"It":[37],"also":[38],"features":[39],"a":[40],"newly":[41],"developed":[42],"asynchronous":[43],"DDR":[44],"interface":[45],"that":[46],"can":[47],"support":[48],"the":[51],"maximum":[52],"bandwidth":[53],"400":[55],"MB/s.":[56],"To":[57],"improve":[58],"performance":[59],"reliability,":[61],"on-chip":[62],"randomizer,":[63],"soft":[64],"data":[65],"readout,":[66],"incremental":[68],"bit":[69],"line":[70],"pre-charge":[71],"scheme":[72],"have":[73]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":5}],"updated_date":"2026-03-25T23:56:10.502304","created_date":"2025-10-10T00:00:00"}