{"id":"https://openalex.org/W2156167918","doi":"https://doi.org/10.1109/jssc.2011.2117530","title":"Highly Linear RF CMOS Variable Attenuators With Adaptive Body Biasing","display_name":"Highly Linear RF CMOS Variable Attenuators With Adaptive Body Biasing","publication_year":2011,"publication_date":"2011-03-29","ids":{"openalex":"https://openalex.org/W2156167918","doi":"https://doi.org/10.1109/jssc.2011.2117530","mag":"2156167918"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2011.2117530","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2011.2117530","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5077305192","display_name":"Yanyu Huang","orcid":"https://orcid.org/0000-0002-4134-944X"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Yan-Yu Huang","raw_affiliation_strings":["Georgia Institute of Technology, Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009664440","display_name":"Wangmyong Woo","orcid":null},"institutions":[{"id":"https://openalex.org/I4210101778","display_name":"Samsung (United States)","ror":"https://ror.org/01bfbvm65","country_code":"US","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4210101778"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Wangmyong Woo","raw_affiliation_strings":["Samsung Design Center, Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"Samsung Design Center, Atlanta, GA, USA","institution_ids":["https://openalex.org/I4210101778"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100817698","display_name":"Youngchang Yoon","orcid":null},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Youngchang Yoon","raw_affiliation_strings":["Georgia Institute of Technology, Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100723878","display_name":"Chang-Ho Lee","orcid":"https://orcid.org/0000-0002-9175-227X"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chang-Ho Lee","raw_affiliation_strings":["Georgia Institute of Technology, Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5077305192"],"corresponding_institution_ids":["https://openalex.org/I130701444"],"apc_list":null,"apc_paid":null,"fwci":2.6496,"has_fulltext":false,"cited_by_count":57,"citation_normalized_percentile":{"value":0.90799516,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":"46","issue":"5","first_page":"1023","last_page":"1033"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10262","display_name":"Microwave Engineering and Waveguides","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/attenuator","display_name":"Attenuator (electronics)","score":0.8165357112884521},{"id":"https://openalex.org/keywords/linearity","display_name":"Linearity","score":0.7784117460250854},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7560771703720093},{"id":"https://openalex.org/keywords/insertion-loss","display_name":"Insertion loss","score":0.5347933173179626},{"id":"https://openalex.org/keywords/attenuation","display_name":"Attenuation","score":0.44937634468078613},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4450492262840271},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4322342276573181},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.38307589292526245},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3015890121459961},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24631518125534058}],"concepts":[{"id":"https://openalex.org/C174847166","wikidata":"https://www.wikidata.org/wiki/Q1269728","display_name":"Attenuator (electronics)","level":3,"score":0.8165357112884521},{"id":"https://openalex.org/C77170095","wikidata":"https://www.wikidata.org/wiki/Q1753188","display_name":"Linearity","level":2,"score":0.7784117460250854},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7560771703720093},{"id":"https://openalex.org/C90327742","wikidata":"https://www.wikidata.org/wiki/Q947396","display_name":"Insertion loss","level":2,"score":0.5347933173179626},{"id":"https://openalex.org/C184652730","wikidata":"https://www.wikidata.org/wiki/Q2357982","display_name":"Attenuation","level":2,"score":0.44937634468078613},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4450492262840271},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4322342276573181},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.38307589292526245},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3015890121459961},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24631518125534058},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2011.2117530","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2011.2117530","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7400000095367432,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W1503185492","https://openalex.org/W1505199273","https://openalex.org/W1563054381","https://openalex.org/W1564201208","https://openalex.org/W1566916904","https://openalex.org/W1572152452","https://openalex.org/W1989109025","https://openalex.org/W1990771799","https://openalex.org/W1997494960","https://openalex.org/W2100213976","https://openalex.org/W2104100590","https://openalex.org/W2133995955","https://openalex.org/W2135888962","https://openalex.org/W2137795881","https://openalex.org/W2140133536","https://openalex.org/W2160357162","https://openalex.org/W2163883564","https://openalex.org/W2170237053","https://openalex.org/W2171197391","https://openalex.org/W3147616483","https://openalex.org/W6648181381"],"related_works":["https://openalex.org/W2371441615","https://openalex.org/W2137326518","https://openalex.org/W2528889450","https://openalex.org/W2358538344","https://openalex.org/W3198851749","https://openalex.org/W2167201826","https://openalex.org/W602862957","https://openalex.org/W4367147853","https://openalex.org/W2083500666","https://openalex.org/W3010402961"],"abstract_inverted_index":{"Several":[0],"approaches":[1],"to":[2,41,52,83],"design":[3,146],"a":[4,26,77],"linear":[5],"attenuator":[6,40,58,75],"have":[7,42],"been":[8,63],"analyzed":[9],"in":[10],"terms":[11],"of":[12,29,90],"the":[13,39,53,128,148,157],"transistor":[14],"impedance":[15],"variation,":[16],"linearity,":[17],"frequency":[18,110,153],"responses,":[19,154],"and":[20,47,65,99,127,152,155],"circuit":[21],"complexity.":[22],"This":[23],"paper":[24],"proposes":[25],"novel":[27],"method":[28,37],"using":[30,67],"an":[31,87],"adaptive":[32],"bootstrapped":[33],"body":[34],"biasing.":[35],"The":[36,74,112],"allows":[38],"maximum":[43],"power":[44],"handling":[45],"capability":[46],"bandwidth":[48],"without":[49],"adding":[50],"complexity":[51],"circuit.":[54],"A":[55],"\u03c0-type":[56],"variable":[57],"for":[59],"WCDMA":[60],"transmitters":[61],"has":[62,76,156],"designed":[64],"fabricated":[66],"IBM":[68],"0.18-\u03bc":[69],"m":[70],"triple-well":[71],"CMOS":[72,162],"technology.":[73],"linear-in-dB":[78],"controllability":[79],"from":[80],"400":[81],"MHz":[82],"3.7":[84],"GHz":[85],"with":[86],"attenuation":[88],"range":[89],"33":[91],"dB.":[92],"Its":[93],"insertion":[94],"loss":[95,102],"is":[96,103,123,134],"0.9-2.9":[97],"dB":[98,107],"worst-case":[100],"return":[101],"better":[104],"than":[105,136],"-9":[106],"within":[108],"this":[109,145],"band.":[111],"minimum":[113,129],"input":[114],"1-dB":[115],"compression":[116],"point":[117],"(IP":[118],"<sub":[119,131],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[120,132],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">1dB</sub>":[121],")":[122],"above":[124],"7.5":[125],"dBm,":[126],"IIP":[130],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</sub>":[133],"greater":[135],"17":[137],"dBm":[138],"at":[139],"1.95":[140],"GHz.":[141],"To":[142],"our":[143],"knowledge,":[144],"achieves":[147],"best":[149],"linearity":[150],"performance":[151],"smallest":[158],"area":[159],"among":[160],"similar":[161],"works.":[163]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":6},{"year":2023,"cited_by_count":8},{"year":2022,"cited_by_count":6},{"year":2021,"cited_by_count":5},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":6},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":3},{"year":2015,"cited_by_count":5},{"year":2014,"cited_by_count":3},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}