{"id":"https://openalex.org/W2109299775","doi":"https://doi.org/10.1109/jssc.2010.2098210","title":"A 100 MHz Ladder FeRAM Design With Capacitance-Coupled-Bitline (CCB) Cell","display_name":"A 100 MHz Ladder FeRAM Design With Capacitance-Coupled-Bitline (CCB) Cell","publication_year":2011,"publication_date":"2011-01-07","ids":{"openalex":"https://openalex.org/W2109299775","doi":"https://doi.org/10.1109/jssc.2010.2098210","mag":"2109299775"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2010.2098210","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2010.2098210","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5050556210","display_name":"D. Takashima","orcid":"https://orcid.org/0000-0002-8527-067X"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Daisaburo Takashima","raw_affiliation_strings":["Center of Semiconductor Research and Development, Toshiba Corporation, Yokohama, Japan","Center for Semicond. R&D, Toshiba Corp., Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center of Semiconductor Research and Development, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"Center for Semicond. R&D, Toshiba Corp., Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028164903","display_name":"Yasushi Nagadomi","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yasushi Nagadomi","raw_affiliation_strings":["Center of Semiconductor Research and Development, Toshiba Corporation, Yokohama, Japan","Center for Semicond. R&D, Toshiba Corp., Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center of Semiconductor Research and Development, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"Center for Semicond. R&D, Toshiba Corp., Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113686919","display_name":"T. Ozaki","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tohru Ozaki","raw_affiliation_strings":["Center of Semiconductor Research and Development, Toshiba Corporation, Yokohama, Japan","Center for Semicond. R&D, Toshiba Corp., Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center of Semiconductor Research and Development, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"Center for Semicond. R&D, Toshiba Corp., Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.6218,"has_fulltext":false,"cited_by_count":19,"citation_normalized_percentile":{"value":0.85434737,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":"46","issue":"3","first_page":"681","last_page":"689"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectric-ram","display_name":"Ferroelectric RAM","score":0.8452399373054504},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.6140997409820557},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.6038287281990051},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.47920212149620056},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.46841707825660706},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3375617265701294},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.32801297307014465},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.2669745683670044},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2301434576511383},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19588926434516907},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.10482171177864075}],"concepts":[{"id":"https://openalex.org/C161164327","wikidata":"https://www.wikidata.org/wiki/Q703656","display_name":"Ferroelectric RAM","level":4,"score":0.8452399373054504},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.6140997409820557},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.6038287281990051},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.47920212149620056},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.46841707825660706},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3375617265701294},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.32801297307014465},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.2669745683670044},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2301434576511383},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19588926434516907},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10482171177864075},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2010.2098210","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2010.2098210","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6700000166893005,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1971301746","https://openalex.org/W2029402722","https://openalex.org/W2030257259","https://openalex.org/W2061979212","https://openalex.org/W2061979612","https://openalex.org/W2100954356","https://openalex.org/W2109299775","https://openalex.org/W2121389971","https://openalex.org/W2161509953","https://openalex.org/W2167326092","https://openalex.org/W2171884033","https://openalex.org/W2546250013","https://openalex.org/W3150129602","https://openalex.org/W6682050327"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W2482369952","https://openalex.org/W2054290933","https://openalex.org/W3212531278","https://openalex.org/W1985289646","https://openalex.org/W2099626417","https://openalex.org/W2019514496","https://openalex.org/W3129126528","https://openalex.org/W2354552488","https://openalex.org/W1969814957"],"abstract_inverted_index":{"This":[0,32,63],"paper":[1],"proposes":[2],"a":[3,50,74,90,106,177,223],"new":[4,193],"ladder":[5,18,61,178,209],"FeRAM":[6,19,159,210],"ar":[7],"chitecture":[8],"with":[9,55,94,211],"capacitance-coupled-bitline":[10],"(CCB)":[11],"cells":[12,57,175,214],"for":[13,182],"high-end":[14],"embedded":[15],"applications.":[16],"The":[17,127,171],"architecture":[20],"short-circuits":[21],"both":[22],"electrodes":[23],"of":[24,79,100,130,135,151,173,227],"each":[25],"ferroelectric":[26,77],"capacitor":[27,78],"at":[28,235],"every":[29],"standby":[30],"cycle.":[31],"overcomes":[33],"the":[34,40,101,131,148,155,212,216],"fatal":[35],"disturbance":[36],"problem":[37],"inherent":[38],"to":[39,105,115,147,154,158],"CCB":[41,102,213],"cell,":[42],"and":[43,52,89,123,167,188,215,231],"halves":[44],"read/write":[45,226],"cycle":[46,230],"time":[47],"by":[48,118,162],"sharing":[49],"plateline":[51,98,108,195,218],"its":[53],"driver":[54],"32":[56],"in":[58,143,176],"two":[59],"neighboring":[60],"blocks.":[62],"configuration":[64],"realizes":[65],"small":[66],"0.35":[67],"\u03bcm":[68,84],"<sup":[69,85],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[70,86],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[71,87],"cell":[72,103,184,186],"using":[73,109],"highly":[75,91],"reliable":[76],"as":[80,82],"large":[81],"0.145":[83],"size,":[88,185],"compatible":[92],"process":[93],"logic-LSI.":[95],"A":[96,138,192,206],"slow":[97],"drive":[99],"due":[104,153],"resistive":[107],"an":[110,136],"active":[111,189],"area":[112,128],"is":[113,133,160,180],"minimized":[114],"2.5":[116],"ns":[117,229,233],"introducing":[119,163],"thick":[120],"M3":[121,125],"shunt-path":[122],"distributed":[124],"platelines.":[126],"penalty":[129],"shunt":[132],"4.7%":[134],"array.":[137],"serious":[139],"bitline-to-bitline":[140],"coupling":[141],"noise":[142],"edge":[144],"bitlines":[145,166],"up":[146],"noise/signal":[149],"ratio":[150],"0.38":[152],"operation":[156,202],"peculiar":[157],"eliminated":[161],"activated":[164],"dummy":[165],"their":[168],"sense":[169],"amplifiers.":[170],"design":[172],"16":[174],"block":[179],"optimal":[181],"effective":[183],"signal,":[187],"power":[190],"dissipation.":[191],"early":[194,217],"pull-down":[196,219],"read":[197,204,220],"scheme":[198,221],"omits":[199],"\"0\"-data":[200],"rewrite":[201],"without":[203],"disturbance.":[205],"64":[207],"Kb":[208],"achieves":[222],"fast":[224],"random":[225],"10":[228],"8":[232],"access":[234],"150\u00b0C.":[236]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2018,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":6},{"year":2014,"cited_by_count":3}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}