{"id":"https://openalex.org/W2174378327","doi":"https://doi.org/10.1109/jssc.2009.2014733","title":"A 12-Gb/s 11-mW Half-Rate Sampled 5-Tap Decision Feedback Equalizer With Current-Integrating Summers in 45-nm SOI CMOS Technology","display_name":"A 12-Gb/s 11-mW Half-Rate Sampled 5-Tap Decision Feedback Equalizer With Current-Integrating Summers in 45-nm SOI CMOS Technology","publication_year":2009,"publication_date":"2009-03-24","ids":{"openalex":"https://openalex.org/W2174378327","doi":"https://doi.org/10.1109/jssc.2009.2014733","mag":"2174378327"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2009.2014733","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2009.2014733","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5069727044","display_name":"Timothy O. Dickson","orcid":"https://orcid.org/0000-0002-0361-031X"},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Timothy O. Dickson","raw_affiliation_strings":["IBM Thomson J.Watson Research Center, Yorktown, NY, USA"],"affiliations":[{"raw_affiliation_string":"IBM Thomson J.Watson Research Center, Yorktown, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063150723","display_name":"John F. Bulzacchelli","orcid":"https://orcid.org/0000-0002-8803-9553"},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"John F. Bulzacchelli","raw_affiliation_strings":["IBM Thomson J.Watson Research Center, Yorktown, NY, USA"],"affiliations":[{"raw_affiliation_string":"IBM Thomson J.Watson Research Center, Yorktown, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5004166346","display_name":"Daniel J. Friedman","orcid":"https://orcid.org/0000-0002-3967-8746"},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Daniel J. Friedman","raw_affiliation_strings":["IBM Thomson J.Watson Research Center, Yorktown, NY, USA"],"affiliations":[{"raw_affiliation_string":"IBM Thomson J.Watson Research Center, Yorktown, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5069727044"],"corresponding_institution_ids":["https://openalex.org/I4210114115"],"apc_list":null,"apc_paid":null,"fwci":8.3741,"has_fulltext":false,"cited_by_count":80,"citation_normalized_percentile":{"value":0.98048291,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"44","issue":"4","first_page":"1298","last_page":"1305"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11417","display_name":"Advancements in PLL and VCO Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11417","display_name":"Advancements in PLL and VCO Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.998199999332428,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.8922373652458191},{"id":"https://openalex.org/keywords/equalizer","display_name":"Equalizer","score":0.6295842528343201},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.540338397026062},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5128583908081055},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.49154171347618103},{"id":"https://openalex.org/keywords/sampling","display_name":"Sampling (signal processing)","score":0.4676760137081146},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.43715932965278625},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.43526729941368103},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.4235357940196991},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3486260771751404},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1971188485622406},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.16072872281074524},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.10473108291625977}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.8922373652458191},{"id":"https://openalex.org/C67545415","wikidata":"https://www.wikidata.org/wiki/Q5384218","display_name":"Equalizer","level":3,"score":0.6295842528343201},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.540338397026062},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5128583908081055},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.49154171347618103},{"id":"https://openalex.org/C140779682","wikidata":"https://www.wikidata.org/wiki/Q210868","display_name":"Sampling (signal processing)","level":3,"score":0.4676760137081146},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.43715932965278625},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.43526729941368103},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.4235357940196991},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3486260771751404},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1971188485622406},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.16072872281074524},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.10473108291625977},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C106131492","wikidata":"https://www.wikidata.org/wiki/Q3072260","display_name":"Filter (signal processing)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2009.2014733","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2009.2014733","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7099999785423279,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1505672477","https://openalex.org/W2039301299","https://openalex.org/W2065119992","https://openalex.org/W2086855856","https://openalex.org/W2098429737","https://openalex.org/W2122413687","https://openalex.org/W2132033158","https://openalex.org/W2143430538","https://openalex.org/W2787998525","https://openalex.org/W2788591460"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W2899084033","https://openalex.org/W1850314507","https://openalex.org/W1575351219","https://openalex.org/W2547180888","https://openalex.org/W2139302125","https://openalex.org/W2393073187","https://openalex.org/W2361368568","https://openalex.org/W3020006362","https://openalex.org/W2071524226"],"abstract_inverted_index":{"The":[0,24,63],"design":[1],"and":[2,47,59,75],"experimental":[3],"results":[4],"of":[5,55,97],"a":[6,16,27,56,80,91],"low-power,":[7],"low-area":[8],"5-tap":[9,64],"decision":[10],"feedback":[11],"equalizer":[12],"(DFE)":[13],"implemented":[14],"in":[15,40],"45":[17],"nm":[18],"SOI":[19],"CMOS":[20],"technology":[21],"are":[22,50],"reported.":[23],"DFE":[25,65],"employs":[26],"low-power":[28],"current-integrating":[29],"summer":[30],"with":[31,94],"sampling":[32],"front-end,":[33],"which":[34],"eliminates":[35],"systematic":[36],"frequency-dependent":[37],"loss":[38,98],"inherent":[39],"conventional":[41],"integrating":[42],"serial":[43],"receivers.":[44],"Further":[45],"power":[46],"area":[48],"savings":[49],"achieved":[51],"through":[52],"the":[53],"use":[54],"direct-feedback":[57],"architecture":[58],"CMOS-style":[60],"rail-to-rail":[61],"clocking.":[62],"core":[66],"occupies":[67],"73":[68],"times":[69],"50":[70],"mum":[71],"<sup":[72],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[73],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[74],"consumes":[76],"11":[77],"mW":[78],"from":[79],"1":[81],"V":[82],"supply":[83],"when":[84],"equalizing":[85],"12":[86],"Gb/s":[87],"data":[88],"passed":[89],"over":[90],"30\"":[92],"channel":[93],"15":[95],"dB":[96],"at":[99],"6":[100],"GHz.":[101]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":3},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":5},{"year":2017,"cited_by_count":8},{"year":2016,"cited_by_count":10},{"year":2015,"cited_by_count":4},{"year":2014,"cited_by_count":6},{"year":2013,"cited_by_count":7},{"year":2012,"cited_by_count":9}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}