{"id":"https://openalex.org/W2067967003","doi":"https://doi.org/10.1109/jssc.2009.2013768","title":"Design of Sub-90 nm Low-Power and Variation Tolerant PD/SOI SRAM Cell Based on Dynamic Stability Metrics","display_name":"Design of Sub-90 nm Low-Power and Variation Tolerant PD/SOI SRAM Cell Based on Dynamic Stability Metrics","publication_year":2009,"publication_date":"2009-02-26","ids":{"openalex":"https://openalex.org/W2067967003","doi":"https://doi.org/10.1109/jssc.2009.2013768","mag":"2067967003"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2009.2013768","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2009.2013768","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5105554115","display_name":"Rajiv Joshi","orcid":"https://orcid.org/0009-0007-7486-1531"},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Rajiv V. Joshi","raw_affiliation_strings":["IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","IBM -- T. J. Watson Research Center, Yorktown Heights, NY"],"affiliations":[{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]},{"raw_affiliation_string":"IBM -- T. J. Watson Research Center, Yorktown Heights, NY","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103714530","display_name":"Saibal Mukhopadhyay","orcid":null},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Saibal Mukhopadhyay","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","Sch. of Electr. & Comput. Eng., Georgia Inst. of Tech., Atlanta, GA"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]},{"raw_affiliation_string":"Sch. of Electr. & Comput. Eng., Georgia Inst. of Tech., Atlanta, GA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111838366","display_name":"D. Plass","orcid":null},"institutions":[{"id":"https://openalex.org/I4210091433","display_name":"Poughkeepsie Public Library District","ror":"https://ror.org/001vaag74","country_code":"US","type":"archive","lineage":["https://openalex.org/I4210091433"]},{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Donald W. Plass","raw_affiliation_strings":["IBM Poughkeepsie, NY, USA","IBM, Poughkeepsie, NY.#TAB#"],"affiliations":[{"raw_affiliation_string":"IBM Poughkeepsie, NY, USA","institution_ids":["https://openalex.org/I4210091433"]},{"raw_affiliation_string":"IBM, Poughkeepsie, NY.#TAB#","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111598082","display_name":"Y.H. Chan","orcid":"https://orcid.org/0009-0004-4911-4233"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4210091433","display_name":"Poughkeepsie Public Library District","ror":"https://ror.org/001vaag74","country_code":"US","type":"archive","lineage":["https://openalex.org/I4210091433"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yuen H. Chan","raw_affiliation_strings":["IBM Poughkeepsie, NY, USA","IBM, Poughkeepsie, NY.#TAB#"],"affiliations":[{"raw_affiliation_string":"IBM Poughkeepsie, NY, USA","institution_ids":["https://openalex.org/I4210091433"]},{"raw_affiliation_string":"IBM, Poughkeepsie, NY.#TAB#","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111956726","display_name":"Ching-Te Chuang","orcid":null},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Ching-Te Chuang","raw_affiliation_strings":["National Chiao Tung University, Hsinchu, Taiwan","National Chiao Tung University HsinChu"],"affiliations":[{"raw_affiliation_string":"National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]},{"raw_affiliation_string":"National Chiao Tung University HsinChu","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5075471805","display_name":"Yue Tan","orcid":"https://orcid.org/0000-0002-3020-4077"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yue Tan","raw_affiliation_strings":["IBM Fishkill, NY, USA","IBM Fishkill, Hopewell, VA"],"affiliations":[{"raw_affiliation_string":"IBM Fishkill, NY, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Fishkill, Hopewell, VA","institution_ids":["https://openalex.org/I1341412227"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5105554115"],"corresponding_institution_ids":["https://openalex.org/I4210114115"],"apc_list":null,"apc_paid":null,"fwci":1.4954,"has_fulltext":false,"cited_by_count":32,"citation_normalized_percentile":{"value":0.83276264,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":"44","issue":"3","first_page":"965","last_page":"976"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.8437082171440125},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7670986652374268},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.6910884976387024},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6440969705581665},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6336867809295654},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6327831149101257},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6313909888267517},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.5921003222465515},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.47663792967796326},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.46160048246383667},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.38055548071861267},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3611803650856018},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.32679784297943115},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.24001237750053406},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1667485535144806},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.06672284007072449}],"concepts":[{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.8437082171440125},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7670986652374268},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.6910884976387024},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6440969705581665},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6336867809295654},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6327831149101257},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6313909888267517},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.5921003222465515},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.47663792967796326},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.46160048246383667},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.38055548071861267},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3611803650856018},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.32679784297943115},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.24001237750053406},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1667485535144806},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.06672284007072449},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2009.2013768","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2009.2013768","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.7900000214576721}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1527137186","https://openalex.org/W1539533361","https://openalex.org/W2029948656","https://openalex.org/W2075059680","https://openalex.org/W2105596754","https://openalex.org/W2132621842","https://openalex.org/W2149800194","https://openalex.org/W2161954730","https://openalex.org/W2168101540"],"related_works":["https://openalex.org/W2104300577","https://openalex.org/W4206445530","https://openalex.org/W2771786520","https://openalex.org/W3151633427","https://openalex.org/W2810180604","https://openalex.org/W2325281603","https://openalex.org/W2944964251","https://openalex.org/W2012754971","https://openalex.org/W2042526628","https://openalex.org/W2119025037"],"abstract_inverted_index":{"In":[0],"this":[1],"paper":[2],"we":[3],"have":[4],"studied":[5],"the":[6,20,41,52,57,60,63,68,73,80,111],"impacts":[7],"of":[8,24,82,113,121],"floating":[9,45],"body":[10,46],"effect,":[11],"device":[12],"leakage,":[13,91],"and":[14,22,33,84,93,115],"gate":[15],"oxide":[16,86],"tunneling":[17,65],"leakage":[18],"on":[19],"read":[21,53,69,92],"write-ability":[23,94],"a":[25],"PD/SOI":[26],"CMOS":[27],"SRAM":[28,122],"cell":[29,87],"under":[30],"Vt,":[31],"L":[32],"W":[34],"variations":[35],"in":[36,104,118],"sub-100":[37],"nm":[38,106],"technology":[39,108],"for":[40],"first":[42],"time.":[43],"The":[44,100],"effect":[47],"is":[48,76,102],"shown":[49,78],"to":[50,109],"degrade":[51],"stability":[54,70,120],"while":[55,71],"improving":[56,119],"write-ability.":[58,74],"On":[59],"other":[61],"hand,":[62],"gate-to-body":[64],"current":[66],"improves":[67],"degrading":[72],"It":[75],"also":[77],"that":[79],"use":[81],"high-Vt":[83,114],"thick":[85],"transistors":[88],"can":[89],"improve":[90],"without":[95],"causing":[96],"significant":[97],"performance":[98],"degradation.":[99],"test-chip":[101],"fabricated":[103],"sub-90":[105],"SOI":[107],"show":[110],"effectiveness":[112],"thick-oxide":[116],"devices":[117],"cells.":[123]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2021,"cited_by_count":4},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":4},{"year":2015,"cited_by_count":4},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":7}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}