{"id":"https://openalex.org/W2108900661","doi":"https://doi.org/10.1109/jssc.2007.908002","title":"An 80 nm 4 Gb/s/pin 32 bit 512 Mb GDDR4 Graphics DRAM With Low Power and Low Noise Data Bus Inversion","display_name":"An 80 nm 4 Gb/s/pin 32 bit 512 Mb GDDR4 Graphics DRAM With Low Power and Low Noise Data Bus Inversion","publication_year":2008,"publication_date":"2008-01-01","ids":{"openalex":"https://openalex.org/W2108900661","doi":"https://doi.org/10.1109/jssc.2007.908002","mag":"2108900661"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2007.908002","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2007.908002","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5000533800","display_name":"Seung-Jun Bae","orcid":"https://orcid.org/0000-0003-0077-7488"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seung-Jun Bae","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004059216","display_name":"Kwang\u2010Il Park","orcid":"https://orcid.org/0000-0002-0199-8090"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kwang-Il Park","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014249580","display_name":"Jeong-Don Ihm","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jeong-Don Ihm","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048288085","display_name":"Hoyoung Song","orcid":"https://orcid.org/0000-0002-0706-132X"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Ho-Young Song","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100410780","display_name":"Woojin Lee","orcid":"https://orcid.org/0000-0002-7082-5687"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Woo-Jin Lee","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100359570","display_name":"Hyunjin Kim","orcid":"https://orcid.org/0000-0003-2370-7423"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyun-Jin Kim","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072225740","display_name":"Kyoung\u2010Ho Kim","orcid":"https://orcid.org/0000-0002-1061-0756"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyoung-Ho Kim","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055773057","display_name":"Yoon-Sik Park","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yoon-Sik Park","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063499357","display_name":"Min Sang Park","orcid":"https://orcid.org/0000-0002-7696-5007"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Min-Sang Park","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043646440","display_name":"Hong-Kyong Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hong-Kyong Lee","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023023936","display_name":"Sam-Young Bang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sam-Young Bang","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109169600","display_name":"Gil-Shin Moon","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Gil-Shin Moon","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005106821","display_name":"Seokwon Hwang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seok-Won Hwang","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002946576","display_name":"Young-Chul Cho","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Young-Chul Cho","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032708212","display_name":"Sang-Jun Hwang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sang-Jun Hwang","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100733983","display_name":"Dae-Hyun Kim","orcid":"https://orcid.org/0000-0003-0801-0230"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dae-Hyun Kim","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067863151","display_name":"Ji-Hoon Lim","orcid":"https://orcid.org/0000-0001-7282-7427"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Ji-Hoon Lim","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100780345","display_name":"Jae-Sung Kim","orcid":"https://orcid.org/0000-0003-1510-5107"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jae-Sung Kim","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100429324","display_name":"Sung\u2010Hoon Kim","orcid":"https://orcid.org/0000-0002-1570-3230"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sung-Hoon Kim","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111921292","display_name":"Seong-Jin Jang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seong-Jin Jang","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110755494","display_name":"Joo Sun Choi","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Joo Sun Choi","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112318178","display_name":"Young-Hyun Jun","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Young-Hyun Jun","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101769965","display_name":"Kinam Kim","orcid":"https://orcid.org/0000-0002-7517-588X"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kinam Kim","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5033005364","display_name":"Soo-In Cho","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Soo-In Cho","raw_affiliation_strings":["DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","Samsung Electron., Gyeonggu-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Design Team, Samsung Electronics Company Limited, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Gyeonggu-Do","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":8.1495,"has_fulltext":false,"cited_by_count":65,"citation_normalized_percentile":{"value":0.97639882,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"43","issue":"1","first_page":"121","last_page":"131"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11417","display_name":"Advancements in PLL and VCO Technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/jitter","display_name":"Jitter","score":0.7445386648178101},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.511300802230835},{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.4993729591369629},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.46105706691741943},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4454272985458374},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.4355071187019348},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3911326825618744},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3573949337005615},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.23350337147712708},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16129842400550842}],"concepts":[{"id":"https://openalex.org/C134652429","wikidata":"https://www.wikidata.org/wiki/Q1052698","display_name":"Jitter","level":2,"score":0.7445386648178101},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.511300802230835},{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.4993729591369629},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.46105706691741943},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4454272985458374},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.4355071187019348},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3911326825618744},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3573949337005615},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.23350337147712708},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16129842400550842}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2007.908002","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2007.908002","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8399999737739563,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W1480746222","https://openalex.org/W1544623790","https://openalex.org/W1965416270","https://openalex.org/W2009275112","https://openalex.org/W2061312307","https://openalex.org/W2087038638","https://openalex.org/W2098429737","https://openalex.org/W2108900661","https://openalex.org/W2132974821","https://openalex.org/W2165072326","https://openalex.org/W2166033101","https://openalex.org/W2171412968","https://openalex.org/W2172414357","https://openalex.org/W2243540610","https://openalex.org/W2739932069","https://openalex.org/W2787998525","https://openalex.org/W4285719527","https://openalex.org/W6628688719"],"related_works":["https://openalex.org/W2121182846","https://openalex.org/W2315668284","https://openalex.org/W2155789024","https://openalex.org/W2109491806","https://openalex.org/W3213608175","https://openalex.org/W2058044441","https://openalex.org/W3117675750","https://openalex.org/W2141743053","https://openalex.org/W2094329012","https://openalex.org/W2109445684"],"abstract_inverted_index":{"4":[0,165],"Gb/s/pin":[1],"32":[2],"bit":[3],"512":[4],"Mb":[5],"GDDR4":[6],"(Graphics":[7],"Double":[8],"Data":[9],"Rate":[10],"4)":[11],"SDRAM":[12],"was":[13],"implemented":[14],"by":[15,61,102,126],"using":[16],"an":[17,81],"80":[18],"nm":[19],"CMOS":[20],"process.":[21],"It":[22],"employs":[23],"a":[24,35,39,58,67,104,112],"data":[25,162],"bus":[26],"inversion":[27],"(DBI)":[28],"coding":[29,139],"to":[30,57,86,107,120,147,157],"overcome":[31],"the":[32,63,97,141,151,161,168],"bottleneck":[33],"of":[34,42,66,130,164],"parallel":[36],"single-ended":[37],"signaling,":[38],"power":[40,44],"consumption":[41],"I/O,":[43],"supply":[45],"noise,":[46],"and":[47,52,91,99,124,150],"crosstalk.":[48],"Both":[49],"DBI":[50,69,78,137],"AC":[51,70],"DC":[53,138],"modes":[54],"are":[55],"combined":[56],"single":[59],"circuit":[60,71,79],"eliminating":[62],"feedback":[64],"path":[65],"conventional":[68],"while":[72],"achieving":[73],"high-speed":[74],"operation.":[75],"The":[76],"proposed":[77],"uses":[80],"analog":[82],"majority":[83],"voter":[84],"insensitive":[85],"mismatch":[87],"for":[88],"small":[89],"area":[90],"delay.":[92],"Ronmiddot":[93],"tuning":[94],"further":[95],"improves":[96],"voltage":[98,152],"time":[100],"margin":[101],"adding":[103],"user-supplied":[105],"offset":[106],"auto-calibrated":[108],"Ronmiddot.":[109],"In":[110],"addition,":[111],"dual":[113],"duty":[114,122],"cycle":[115],"corrector":[116],"(DCC)":[117],"is":[118],"used":[119],"reduce":[121],"error":[123],"jitter":[125,143],"averaging":[127],"two":[128,131],"outputs":[129],"DCCs.":[132],"Measured":[133],"results":[134],"show":[135],"that":[136],"reduces":[140],"peak-to-peak":[142],"from":[144,154],"65.5":[145],"ps":[146,149],"44.5":[148],"fluctuation":[153],"183":[155],"mV":[156,159],"115":[158],"at":[160],"rate":[163],"Gb/s":[166],"with":[167],"2":[169],"V.":[170]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":8},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2018,"cited_by_count":3},{"year":2016,"cited_by_count":5},{"year":2015,"cited_by_count":5},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2026-07-29T09:40:50.615796","created_date":"2025-10-10T00:00:00"}