{"id":"https://openalex.org/W2032091965","doi":"https://doi.org/10.1109/jssc.2007.908001","title":"A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput","display_name":"A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput","publication_year":2008,"publication_date":"2008-01-01","ids":{"openalex":"https://openalex.org/W2032091965","doi":"https://doi.org/10.1109/jssc.2007.908001","mag":"2032091965"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2007.908001","doi":"https://doi.org/10.1109/jssc.2007.908001","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2007.908001","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-a","jufo-3","norway-2","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5051082292","display_name":"Kwang\u2010Jin Lee","orcid":"https://orcid.org/0000-0002-1010-0078","observed_orcids":["https://orcid.org/0000-0002-1010-0078"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kwang-Jin Lee","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039262017","display_name":"Beak-Hyung Cho","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Beak-Hyung Cho","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040599460","display_name":"Wooyeong Cho","orcid":"https://orcid.org/0000-0002-6001-1911","observed_orcids":["https://orcid.org/0000-0002-6001-1911"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Woo-Yeong Cho","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5106408151","display_name":"Sangbeom Kang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sangbeom Kang","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102435935","display_name":"Byung-Gil Choi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Byung-Gil Choi","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112763837","display_name":"Hyung-Rok Oh","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyung-Rok Oh","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080424957","display_name":"Chang\u2010Soo Lee","orcid":"https://orcid.org/0000-0003-3789-2412","observed_orcids":["https://orcid.org/0000-0003-3789-2412","https://orcid.org/0000-0002-6219-4184","https://orcid.org/0000-0002-8375-4793"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Chang-Soo Lee","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100381267","display_name":"Hyejin Kim","orcid":"https://orcid.org/0000-0003-3993-6618","observed_orcids":["https://orcid.org/0000-0003-3993-6618"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hye-Jin Kim","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077623978","display_name":"Joon-Min Park","orcid":"https://orcid.org/0009-0005-3919-6703","observed_orcids":["https://orcid.org/0009-0005-3919-6703"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Joon-Min Park","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083838291","display_name":"Qi Wang","orcid":"https://orcid.org/0000-0003-3571-7186","observed_orcids":["https://orcid.org/0000-0003-3571-7186"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Qi Wang","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054374226","display_name":"Mu-Hui Park","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Mu-Hui Park","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039932709","display_name":"Yuhwan Ro","orcid":"https://orcid.org/0000-0001-8100-9071","observed_orcids":["https://orcid.org/0000-0001-8100-9071"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yu-Hwan Ro","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006370901","display_name":"Joon-Yong Choi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Joon-Yong Choi","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102852699","display_name":"Ki-Sung Kim","orcid":"https://orcid.org/0000-0001-6015-4480","observed_orcids":["https://orcid.org/0000-0001-6015-4480"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Ki-Sung Kim","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","DRAM Development Team Memory Division, Samsung Electronics Company Limited, Hwasong, Gyeonggi, South Korea","Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"DRAM Development Team Memory Division, Samsung Electronics Company Limited, Hwasong, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do","institution_ids":[]}]},{"author_position":"middle","author":{"id":null,"display_name":"Young-Ran Kim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Young-Ran Kim","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do","institution_ids":[]}]},{"author_position":"middle","author":{"id":null,"display_name":"In-Cheol Shin","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"In-Cheol Shin","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do","institution_ids":[]}]},{"author_position":"middle","author":{"id":null,"display_name":"Ki-Won Lim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Ki-Won Lim","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035056765","display_name":"Ho-Keun Cho","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Ho-Keun Cho","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109165051","display_name":"Chang-Han Choi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Chang-Han Choi","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014906742","display_name":"Won-Ryul Chung","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Won-Ryul Chung","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075949257","display_name":"Du-Eung Kim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Du-Eung Kim","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042819645","display_name":"Yong\u2010Jin Yoon","orcid":"https://orcid.org/0000-0002-3885-4947","observed_orcids":["https://orcid.org/0000-0002-3885-4947"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yong-Jin Yoon","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048551971","display_name":"Kwang-Suk Yu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kwang-Suk Yu","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. (ATD) Team, Gyeonggi-Do","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112400797","display_name":"Gitae Jeong","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Gi-Tae Jeong","raw_affiliation_strings":["Technology Development Team Memory Division, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea","[Technology Development Team Memory Division, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Technology Development Team Memory Division, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I4405259277"]},{"raw_affiliation_string":"[Technology Development Team Memory Division, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea]","institution_ids":["https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Hong-Sik Jeong","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hong-Sik Jeong","raw_affiliation_strings":["Technology Development Team Memory Division, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea","[Technology Development Team Memory Division, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Technology Development Team Memory Division, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I4405259277"]},{"raw_affiliation_string":"[Technology Development Team Memory Division, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea]","institution_ids":["https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086455653","display_name":"Choong-Keun Kwak","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Choong-Keun Kwak","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","[Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"[Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea]","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Chang-Hyun Kim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Chang-Hyun Kim","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","[Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"[Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea]","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101769965","display_name":"Kinam Kim","orcid":"https://orcid.org/0000-0002-7517-588X","observed_orcids":["https://orcid.org/0000-0002-7517-588X"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kinam Kim","raw_affiliation_strings":["Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","DRAM Development Team Memory Division, Samsung Electronics Company Limited, Hwasong, Gyeonggi, South Korea","[DRAM Development Team Memory Division, Samsung Electronics Company Limited, Hwasong, Gyeonggi, South Korea]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team, Memory Division, Samsung Electronics Company Limited, Hwasun, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"DRAM Development Team Memory Division, Samsung Electronics Company Limited, Hwasong, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I4405259277"]},{"raw_affiliation_string":"[DRAM Development Team Memory Division, Samsung Electronics Company Limited, Hwasong, Gyeonggi, South Korea]","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":17.0324,"has_fulltext":false,"cited_by_count":190,"citation_normalized_percentile":{"value":0.99421252,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":93,"max":100},"biblio":{"volume":"43","issue":"1","first_page":"150","last_page":"162"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.6240000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.6240000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.20430000126361847,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.04019999876618385,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/phase-change-memory","display_name":"phase-change memory","score":0.6639999747276306},{"id":"https://openalex.org/keywords/90-nm-cmos","display_name":"90 nm CMOS","score":0.8209999799728394},{"id":"https://openalex.org/keywords/charge-pump","display_name":"charge pump","score":0.625},{"id":"https://openalex.org/keywords/read-throughput","display_name":"read throughput","score":0.7429999709129333},{"id":"https://openalex.org/keywords/write-throughput","display_name":"write throughput","score":0.8690000176429749},{"id":"https://openalex.org/keywords/low-voltage-operation","display_name":"low-voltage operation","score":0.5899999737739563}],"concepts":[{"id":"https://openalex.org/C157764524","wikidata":"https://www.wikidata.org/wiki/Q1383412","display_name":"Throughput","level":3,"score":0.7836077213287354},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.662872314453125},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6306338310241699},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6146829128265381},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5037049651145935},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.3865305185317993},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3334665298461914},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.12742206454277039},{"id":"https://openalex.org/C555944384","wikidata":"https://www.wikidata.org/wiki/Q249","display_name":"Wireless","level":2,"score":0.07370954751968384}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2007.908001","doi":"https://doi.org/10.1109/jssc.2007.908001","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2007.908001","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-a","jufo-3","norway-2","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"sustainable_development_goals_aurora":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8500000238418579}],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1486495540","https://openalex.org/W1574306803","https://openalex.org/W1603428089","https://openalex.org/W1888788269","https://openalex.org/W2037747688","https://openalex.org/W2114639336","https://openalex.org/W2156560114","https://openalex.org/W2170821637"],"related_works":["https://openalex.org/W3014521742","https://openalex.org/W2617868873","https://openalex.org/W3204141294","https://openalex.org/W4386230336","https://openalex.org/W4306968100","https://openalex.org/W2136583354","https://openalex.org/W2111238207","https://openalex.org/W2171986175","https://openalex.org/W2089791793","https://openalex.org/W2038858740"],"abstract_inverted_index":{"A":[0,30],"512":[1,47],"Mb":[2,48],"diode-switch":[3,16,42],"PRAM":[4,43,49],"has":[5,21,50],"been":[6],"developed":[7],"in":[8,67],"a":[9,37],"90":[10],"nm":[11],"CMOS":[12],"technology.":[13],"The":[14,46,61],"vertical":[15],"using":[17],"the":[18,41,58],"SEG":[19],"technology":[20],"achieved":[22,51],"minimum":[23],"cell":[24],"size":[25],"and":[26,36,72],"disturbance-free":[27],"core":[28,31],"operation.":[29],"configuration,":[32],"read/write":[33],"circuit":[34],"techniques,":[35],"charge-pump":[38],"system":[39],"for":[40],"are":[44],"proposed.":[45],"read":[52],"throughput":[53,63],"of":[54],"266":[55],"MB/s":[56,66,76],"through":[57],"proposed":[59],"schemes.":[60],"write":[62,70,80],"was":[64],"0.54":[65],"internal":[68],"x2":[69],"mode,":[71],"increased":[73],"to":[74],"4.64":[75],"with":[77],"x16":[78],"accelerated":[79],"mode":[81],"at":[82],"1.8":[83],"V":[84],"supply.":[85]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":8},{"year":2020,"cited_by_count":4},{"year":2019,"cited_by_count":8},{"year":2018,"cited_by_count":9},{"year":2017,"cited_by_count":15},{"year":2016,"cited_by_count":12},{"year":2015,"cited_by_count":12},{"year":2014,"cited_by_count":12},{"year":2013,"cited_by_count":15},{"year":2012,"cited_by_count":24}],"updated_date":"2026-10-12T09:40:04.860316","created_date":"2025-10-10T00:00:00"}