{"id":"https://openalex.org/W2156560114","doi":"https://doi.org/10.1109/jssc.2005.859016","title":"Enhanced Write Performance of a 64-Mb Phase-Change Random Access Memory","display_name":"Enhanced Write Performance of a 64-Mb Phase-Change Random Access Memory","publication_year":2005,"publication_date":"2005-12-28","ids":{"openalex":"https://openalex.org/W2156560114","doi":"https://doi.org/10.1109/jssc.2005.859016","mag":"2156560114"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2005.859016","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2005.859016","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110214924","display_name":"H. Oh","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"H. Oh","raw_affiliation_strings":["SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","SRAM Team, Samsung Electron. Co. Ltd., Gyeonggi-Do, South Korea"],"affiliations":[{"raw_affiliation_string":"SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"SRAM Team, Samsung Electron. Co. Ltd., Gyeonggi-Do, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5070686063","display_name":"B. Cho","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"B. Cho","raw_affiliation_strings":["SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","SRAM Team, Samsung Electron. Co. Ltd., Gyeonggi-Do, South Korea"],"affiliations":[{"raw_affiliation_string":"SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"SRAM Team, Samsung Electron. Co. Ltd., Gyeonggi-Do, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108536857","display_name":"W.Y. Cho","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"W.Y. Cho","raw_affiliation_strings":["SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","SRAM Team, Samsung Electron. Co. Ltd., Gyeonggi-Do, South Korea"],"affiliations":[{"raw_affiliation_string":"SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"SRAM Team, Samsung Electron. Co. Ltd., Gyeonggi-Do, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014677140","display_name":"Sung Min Kang","orcid":"https://orcid.org/0000-0003-1959-8578"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"S. Kang","raw_affiliation_strings":["SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","SRAM Team, Samsung Electron. Co. Ltd., Gyeonggi-Do, South Korea"],"affiliations":[{"raw_affiliation_string":"SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"SRAM Team, Samsung Electron. Co. Ltd., Gyeonggi-Do, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052310843","display_name":"Byung Joon Choi","orcid":"https://orcid.org/0000-0003-1920-8162"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"B. Choi","raw_affiliation_strings":["SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","SRAM Team, Samsung Electron. Co. Ltd., Gyeonggi-Do, South Korea"],"affiliations":[{"raw_affiliation_string":"SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"SRAM Team, Samsung Electron. Co. Ltd., Gyeonggi-Do, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021402780","display_name":"Hyeongmo Kim","orcid":"https://orcid.org/0009-0001-1743-9787"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"H. Kim","raw_affiliation_strings":["SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","SRAM Team, Samsung Electron. Co. Ltd., Gyeonggi-Do, South Korea"],"affiliations":[{"raw_affiliation_string":"SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"SRAM Team, Samsung Electron. Co. Ltd., Gyeonggi-Do, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029600455","display_name":"Kuisoon Kim","orcid":"https://orcid.org/0000-0003-2207-2251"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"K. Kim","raw_affiliation_strings":["SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","Technology Development Team, Memory Division, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea","[SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea]"],"affiliations":[{"raw_affiliation_string":"SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Technology Development Team, Memory Division, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"[SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea]","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000581119","display_name":"Dongjae Kim","orcid":"https://orcid.org/0000-0003-2871-7815"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"D. Kim","raw_affiliation_strings":["SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","[SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea]"],"affiliations":[{"raw_affiliation_string":"SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"[SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea]","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110261458","display_name":"Chanyeong Kwak","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"C. Kwak","raw_affiliation_strings":["SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","[SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea]"],"affiliations":[{"raw_affiliation_string":"SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"[SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea]","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004930311","display_name":"Hye Ryung Byun","orcid":"https://orcid.org/0000-0001-5839-9761"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"H. Byun","raw_affiliation_strings":["SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","[SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea]"],"affiliations":[{"raw_affiliation_string":"SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"[SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea]","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102948108","display_name":"Giho Jeong","orcid":"https://orcid.org/0000-0002-6582-7944"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"G. Jeong","raw_affiliation_strings":["Technology Development Team, Memory Division, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea","[Technology Development Team Memory Division, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea]"],"affiliations":[{"raw_affiliation_string":"Technology Development Team, Memory Division, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"[Technology Development Team Memory Division, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea]","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101674245","display_name":"Hongsik Jeong","orcid":"https://orcid.org/0000-0003-4367-5625"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"H. Jeong","raw_affiliation_strings":["Technology Development Team, Memory Division, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea","[Technology Development Team Memory Division, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea]"],"affiliations":[{"raw_affiliation_string":"Technology Development Team, Memory Division, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"[Technology Development Team Memory Division, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea]","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5029600455","display_name":"Kuisoon Kim","orcid":"https://orcid.org/0000-0003-2207-2251"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"K. Kim","raw_affiliation_strings":["SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","Technology Development Team, Memory Division, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea","[Technology Development Team Memory Division, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea]"],"affiliations":[{"raw_affiliation_string":"SRAM Team, Memory Division, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Technology Development Team, Memory Division, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"[Technology Development Team Memory Division, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea]","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":13,"corresponding_author_ids":["https://openalex.org/A5110214924"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":3.5204,"has_fulltext":false,"cited_by_count":78,"citation_normalized_percentile":{"value":0.93316445,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"41","issue":"1","first_page":"122","last_page":"126"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":0.9979000091552734,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":0.9979000091552734,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9909999966621399,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12236","display_name":"Photoreceptor and optogenetics research","score":0.9843000173568726,"subfield":{"id":"https://openalex.org/subfields/2804","display_name":"Cellular and Molecular Neuroscience"},"field":{"id":"https://openalex.org/fields/28","display_name":"Neuroscience"},"domain":{"id":"https://openalex.org/domains/1","display_name":"Life Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/reset","display_name":"Reset (finance)","score":0.8965390920639038},{"id":"https://openalex.org/keywords/phase-change-memory","display_name":"Phase-change memory","score":0.7928892970085144},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6207736134529114},{"id":"https://openalex.org/keywords/access-time","display_name":"Access time","score":0.6062296032905579},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5604133605957031},{"id":"https://openalex.org/keywords/random-access","display_name":"Random access","score":0.5536177158355713},{"id":"https://openalex.org/keywords/set","display_name":"Set (abstract data type)","score":0.5394940972328186},{"id":"https://openalex.org/keywords/generator","display_name":"Generator (circuit theory)","score":0.5179864168167114},{"id":"https://openalex.org/keywords/phase","display_name":"Phase (matter)","score":0.43854427337646484},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.43652141094207764},{"id":"https://openalex.org/keywords/phase-change","display_name":"Phase change","score":0.32819294929504395},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.29516327381134033},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.2734203338623047},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.2582204341888428},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.20670226216316223},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1195155680179596},{"id":"https://openalex.org/keywords/computer-network","display_name":"Computer network","score":0.11493387818336487}],"concepts":[{"id":"https://openalex.org/C2779795794","wikidata":"https://www.wikidata.org/wiki/Q7315343","display_name":"Reset (finance)","level":2,"score":0.8965390920639038},{"id":"https://openalex.org/C64142963","wikidata":"https://www.wikidata.org/wiki/Q1153902","display_name":"Phase-change memory","level":3,"score":0.7928892970085144},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6207736134529114},{"id":"https://openalex.org/C194080101","wikidata":"https://www.wikidata.org/wiki/Q46306","display_name":"Access time","level":2,"score":0.6062296032905579},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5604133605957031},{"id":"https://openalex.org/C101722063","wikidata":"https://www.wikidata.org/wiki/Q218825","display_name":"Random access","level":2,"score":0.5536177158355713},{"id":"https://openalex.org/C177264268","wikidata":"https://www.wikidata.org/wiki/Q1514741","display_name":"Set (abstract data type)","level":2,"score":0.5394940972328186},{"id":"https://openalex.org/C2780992000","wikidata":"https://www.wikidata.org/wiki/Q17016113","display_name":"Generator (circuit theory)","level":3,"score":0.5179864168167114},{"id":"https://openalex.org/C44280652","wikidata":"https://www.wikidata.org/wiki/Q104837","display_name":"Phase (matter)","level":2,"score":0.43854427337646484},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.43652141094207764},{"id":"https://openalex.org/C133256868","wikidata":"https://www.wikidata.org/wiki/Q7180940","display_name":"Phase change","level":2,"score":0.32819294929504395},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.29516327381134033},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.2734203338623047},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.2582204341888428},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.20670226216316223},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1195155680179596},{"id":"https://openalex.org/C31258907","wikidata":"https://www.wikidata.org/wiki/Q1301371","display_name":"Computer network","level":1,"score":0.11493387818336487},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C106159729","wikidata":"https://www.wikidata.org/wiki/Q2294553","display_name":"Financial economics","level":1,"score":0.0},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/jssc.2005.859016","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2005.859016","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},{"id":"pmh:oai:scholarworks.unist.ac.kr:201301/27159","is_oa":false,"landing_page_url":"https://scholarworks.unist.ac.kr/handle/201301/27159","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"ARTICLE"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.6399999856948853}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1486495540","https://openalex.org/W1574306803","https://openalex.org/W2170821637","https://openalex.org/W4254007354","https://openalex.org/W6684982254"],"related_works":["https://openalex.org/W1980582986","https://openalex.org/W2169261257","https://openalex.org/W3145535897","https://openalex.org/W2544064345","https://openalex.org/W2189507863","https://openalex.org/W2058668353","https://openalex.org/W4230076341","https://openalex.org/W2045431561","https://openalex.org/W4232092075","https://openalex.org/W1554452560"],"abstract_inverted_index":{"The":[0,45],"write":[1,51],"performance":[2],"of":[3,27],"the":[4,25],"1.8-V":[5],"64-Mb":[6],"phase-change":[7],"random":[8],"access":[9,47],"memory":[10],"(PRAM)":[11],"has":[12],"been":[13],"improved,":[14],"which":[15],"was":[16],"developed":[17],"based":[18],"on":[19],"0.12-/spl":[20],"mu/m":[21],"CMOS":[22],"technology.":[23],"For":[24],"improvement":[26],"RESET":[28],"and":[29,37,49,56],"SET":[30,50],"distributions,":[31],"a":[32],"cell":[33],"current":[34],"regulator":[35],"scheme":[36],"multiple":[38],"step-down":[39],"pulse":[40],"generator":[41],"were":[42],"employed,":[43],"respectively.":[44,59],"read":[46],"time":[48,52],"are":[53],"68":[54],"ns":[55],"180":[57],"ns,":[58]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":4},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":5},{"year":2014,"cited_by_count":5},{"year":2013,"cited_by_count":4},{"year":2012,"cited_by_count":7}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}