{"id":"https://openalex.org/W2000914964","doi":"https://doi.org/10.1109/jssc.2004.837964","title":"A 3.6-Gb/s point-to-point heterogeneous-voltage-capable DRAM interface for capacity-scalable memory subsystems","display_name":"A 3.6-Gb/s point-to-point heterogeneous-voltage-capable DRAM interface for capacity-scalable memory subsystems","publication_year":2005,"publication_date":"2005-01-01","ids":{"openalex":"https://openalex.org/W2000914964","doi":"https://doi.org/10.1109/jssc.2004.837964","mag":"2000914964"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2004.837964","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2004.837964","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113667870","display_name":"James J. Kennedy","orcid":null},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"J. Kennedy","raw_affiliation_strings":["Circuits Research, INTEL, Research Laboratory, Hillsboro, OR, USA"],"affiliations":[{"raw_affiliation_string":"Circuits Research, INTEL, Research Laboratory, Hillsboro, OR, USA","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087011369","display_name":"R. Mooney","orcid":null},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Mooney","raw_affiliation_strings":["Circuits Research, INTEL, Research Laboratory, Hillsboro, OR, USA"],"affiliations":[{"raw_affiliation_string":"Circuits Research, INTEL, Research Laboratory, Hillsboro, OR, USA","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062463814","display_name":"R. Ellis","orcid":"https://orcid.org/0000-0001-6698-3271"},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Ellis","raw_affiliation_strings":["Circuits Research, INTEL, Research Laboratory, Hillsboro, OR, USA"],"affiliations":[{"raw_affiliation_string":"Circuits Research, INTEL, Research Laboratory, Hillsboro, OR, USA","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090419770","display_name":"James Jaussi","orcid":null},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. Jaussi","raw_affiliation_strings":["Circuits Research, INTEL, Research Laboratory, Hillsboro, OR, USA"],"affiliations":[{"raw_affiliation_string":"Circuits Research, INTEL, Research Laboratory, Hillsboro, OR, USA","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112875487","display_name":"Shekhar Borkar","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"S. Borkar","raw_affiliation_strings":["Samsung Electronics Limited, Hwasung, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Limited, Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083292265","display_name":"Jung-Hwan Choi","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jung-Hwan Choi","raw_affiliation_strings":["Samsung Electronics Limited, Hwasung, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Limited, Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012050880","display_name":"Jae\u2010Kwan Kim","orcid":"https://orcid.org/0000-0002-7771-6467"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jae-Kwan Kim","raw_affiliation_strings":["Samsung Electronics Limited, Hwasung, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Limited, Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045956931","display_name":"Chan-Kyong Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Chan-Kyong Kim","raw_affiliation_strings":["Samsung Electronics Limited, Hwasung, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Limited, Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072821271","display_name":"Woo-Seop Kim","orcid":"https://orcid.org/0009-0008-6554-358X"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Woo-Seop Kim","raw_affiliation_strings":["Samsung Electronics Limited, Hwasung, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Limited, Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100772344","display_name":"Chang\u2010Hyun Kim","orcid":"https://orcid.org/0000-0002-7112-6335"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Chang-Hyun Kim","raw_affiliation_strings":["Samsung Electronics Limited, Hwasung, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Limited, Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014650493","display_name":"Soo-In Cho","orcid":null},"institutions":[{"id":"https://openalex.org/I4210144190","display_name":"Infineon Technologies (United States)","ror":"https://ror.org/04e4db319","country_code":"US","type":"company","lineage":["https://openalex.org/I137594350","https://openalex.org/I4210144190"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Soo-In Cho","raw_affiliation_strings":["Infineon Technologies, WIlliston, VT, USA"],"affiliations":[{"raw_affiliation_string":"Infineon Technologies, WIlliston, VT, USA","institution_ids":["https://openalex.org/I4210144190"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073898280","display_name":"Steffen Loeffler","orcid":null},"institutions":[{"id":"https://openalex.org/I4210144190","display_name":"Infineon Technologies (United States)","ror":"https://ror.org/04e4db319","country_code":"US","type":"company","lineage":["https://openalex.org/I137594350","https://openalex.org/I4210144190"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Loeffler","raw_affiliation_strings":["Infineon Technologies, WIlliston, VT, USA"],"affiliations":[{"raw_affiliation_string":"Infineon Technologies, WIlliston, VT, USA","institution_ids":["https://openalex.org/I4210144190"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102870515","display_name":"J. Hoffmann","orcid":"https://orcid.org/0000-0001-9501-0874"},"institutions":[{"id":"https://openalex.org/I4210144190","display_name":"Infineon Technologies (United States)","ror":"https://ror.org/04e4db319","country_code":"US","type":"company","lineage":["https://openalex.org/I137594350","https://openalex.org/I4210144190"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. Hoffmann","raw_affiliation_strings":["Infineon Technologies, WIlliston, VT, USA"],"affiliations":[{"raw_affiliation_string":"Infineon Technologies, WIlliston, VT, USA","institution_ids":["https://openalex.org/I4210144190"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067426703","display_name":"W. Hokenmaier","orcid":null},"institutions":[{"id":"https://openalex.org/I4210144190","display_name":"Infineon Technologies (United States)","ror":"https://ror.org/04e4db319","country_code":"US","type":"company","lineage":["https://openalex.org/I137594350","https://openalex.org/I4210144190"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"W. Hokenmaier","raw_affiliation_strings":["Infineon Technologies, WIlliston, VT, USA"],"affiliations":[{"raw_affiliation_string":"Infineon Technologies, WIlliston, VT, USA","institution_ids":["https://openalex.org/I4210144190"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034326940","display_name":"R. Houghton","orcid":null},"institutions":[{"id":"https://openalex.org/I4210144190","display_name":"Infineon Technologies (United States)","ror":"https://ror.org/04e4db319","country_code":"US","type":"company","lineage":["https://openalex.org/I137594350","https://openalex.org/I4210144190"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Houghton","raw_affiliation_strings":["Infineon Technologies, WIlliston, VT, USA"],"affiliations":[{"raw_affiliation_string":"Infineon Technologies, WIlliston, VT, USA","institution_ids":["https://openalex.org/I4210144190"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5082024935","display_name":"Thomas Vogelsang","orcid":"https://orcid.org/0000-0001-5513-5197"},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"T. Vogelsang","raw_affiliation_strings":["Circuits Research, INTEL, Research Laboratory, Hillsboro, OR, USA"],"affiliations":[{"raw_affiliation_string":"Circuits Research, INTEL, Research Laboratory, Hillsboro, OR, USA","institution_ids":["https://openalex.org/I1343180700"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":16,"corresponding_author_ids":["https://openalex.org/A5113667870"],"corresponding_institution_ids":["https://openalex.org/I1343180700"],"apc_list":null,"apc_paid":null,"fwci":1.0671,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.7793873,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":96,"max":97},"biblio":{"volume":"40","issue":"1","first_page":"233","last_page":"244"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11417","display_name":"Advancements in PLL and VCO Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11417","display_name":"Advancements in PLL and VCO Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.846973180770874},{"id":"https://openalex.org/keywords/jitter","display_name":"Jitter","score":0.7299858331680298},{"id":"https://openalex.org/keywords/memory-controller","display_name":"Memory controller","score":0.6333714723587036},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6274479627609253},{"id":"https://openalex.org/keywords/cas-latency","display_name":"CAS latency","score":0.5236341953277588},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.5136467814445496},{"id":"https://openalex.org/keywords/sense-amplifier","display_name":"Sense amplifier","score":0.4988260269165039},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.47903600335121155},{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.45382392406463623},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4322325885295868},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3827541172504425},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.3360899090766907},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.22392168641090393},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.09379956126213074}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.846973180770874},{"id":"https://openalex.org/C134652429","wikidata":"https://www.wikidata.org/wiki/Q1052698","display_name":"Jitter","level":2,"score":0.7299858331680298},{"id":"https://openalex.org/C100800780","wikidata":"https://www.wikidata.org/wiki/Q1175867","display_name":"Memory controller","level":3,"score":0.6333714723587036},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6274479627609253},{"id":"https://openalex.org/C189930140","wikidata":"https://www.wikidata.org/wiki/Q1112878","display_name":"CAS latency","level":4,"score":0.5236341953277588},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.5136467814445496},{"id":"https://openalex.org/C32666082","wikidata":"https://www.wikidata.org/wiki/Q7450979","display_name":"Sense amplifier","level":3,"score":0.4988260269165039},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.47903600335121155},{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.45382392406463623},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4322325885295868},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3827541172504425},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.3360899090766907},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22392168641090393},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.09379956126213074},{"id":"https://openalex.org/C77088390","wikidata":"https://www.wikidata.org/wiki/Q8513","display_name":"Database","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2004.837964","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2004.837964","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8500000238418579}],"awards":[],"funders":[{"id":"https://openalex.org/F4320307102","display_name":"Intel Corporation","ror":"https://ror.org/01ek73717"},{"id":"https://openalex.org/F4320332195","display_name":"Samsung","ror":"https://ror.org/04w3jy968"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W1562458392","https://openalex.org/W2000914964","https://openalex.org/W2110796985","https://openalex.org/W2134327341"],"related_works":["https://openalex.org/W1976244802","https://openalex.org/W4293430534","https://openalex.org/W2335743642","https://openalex.org/W4297812927","https://openalex.org/W2800412005","https://openalex.org/W2122646225","https://openalex.org/W2900372418","https://openalex.org/W3140615508","https://openalex.org/W2029945810","https://openalex.org/W1954780666"],"abstract_inverted_index":{"We":[0,115],"describe":[1],"a":[2,26,74,119],"DRAM":[3,16,72,94,110,126],"interface":[4],"operating":[5],"at":[6,70,112],"3.6":[7,113],"Gb/s/pin":[8],"implemented":[9],"in":[10,25,82],"130-nm":[11],"CMOS":[12],"logic":[13,51],"and":[14,38,125],"110-nm":[15],"process":[17],"technologies.":[18],"It":[19],"utilizes":[20],"simultaneous":[21],"bidirectional":[22],"(SBD)":[23],"signaling":[24],"daisy-chained":[27],"(repeated),":[28],"point-to-point":[29],"configuration":[30],"to":[31,46,95],"enable":[32],"high":[33],"performance":[34],"scalable":[35],"memory":[36,47,123],"subsystems;":[37],"also":[39],"provides":[40],"direct":[41],"attach":[42],"capability":[43],"for":[44,57],"DRAMs":[45],"controllers":[48],"or":[49],"other":[50],"devices.":[52],"Source-synchronous":[53],"strobes":[54],"are":[55],"used":[56],"data":[58,69],"capture,":[59],"minimizing":[60],"strobe-to-data":[61],"jitter.":[62],"A":[63],"low-jitter":[64],"differential":[65],"clock":[66,89],"retimes":[67],"the":[68,97,100],"each":[71,93],"on":[73,92],"per":[75,109],"DIMM":[76],"basis":[77],"preventing":[78],"jitter":[79],"from":[80,118],"accumulating":[81],"repeated":[83],"data.":[84],"The":[85],"phase":[86],"of":[87,99,104],"this":[88],"is":[90,107],"adjusted":[91],"minimize":[96],"latency":[98],"repeaters.":[101],"80":[102],"mW":[103],"total":[105],"power":[106],"dissipated":[108],"I/O":[111],"Gb/s.":[114],"present":[116],"results":[117],"system":[120],"using":[121],"both":[122],"controller":[124],"repeater":[127],"test":[128],"chips.":[129]},"counts_by_year":[{"year":2012,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}