{"id":"https://openalex.org/W2152285308","doi":"https://doi.org/10.1109/jssc.2003.818161","title":"A 32-Mb chain FeRAM with segment/stitch array architecture","display_name":"A 32-Mb chain FeRAM with segment/stitch array architecture","publication_year":2003,"publication_date":"2003-10-31","ids":{"openalex":"https://openalex.org/W2152285308","doi":"https://doi.org/10.1109/jssc.2003.818161","mag":"2152285308"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2003.818161","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2003.818161","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5022556912","display_name":"S. Shiratake","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S. Shiratake","raw_affiliation_strings":["Semiconductor Company, Toshiba Corporation, Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Company, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073978473","display_name":"Teppei Miyakawa","orcid":"https://orcid.org/0000-0002-7481-9559"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Miyakawa","raw_affiliation_strings":["Semiconductor Company, Toshiba Corporation, Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Company, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101432602","display_name":"Yoshinori Takeuchi","orcid":"https://orcid.org/0000-0001-6936-3596"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Takeuchi","raw_affiliation_strings":["Semiconductor Company, Toshiba Corporation, Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Company, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051964273","display_name":"Ryu Ogiwara","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"R. Ogiwara","raw_affiliation_strings":["Semiconductor Company, Toshiba Corporation, Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Company, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002044747","display_name":"Masahiro Kamoshida","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Kamoshida","raw_affiliation_strings":["Semiconductor Company, Toshiba Corporation, Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Company, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063273965","display_name":"Katsuhiko Hoya","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Hoya","raw_affiliation_strings":["Semiconductor Company, Toshiba Corporation, Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Company, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110832020","display_name":"Keiko Oikawa","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Oikawa","raw_affiliation_strings":["Semiconductor Company, Toshiba Corporation, Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Company, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109465224","display_name":"T. Ozaki","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Ozaki","raw_affiliation_strings":["Semiconductor Company, Toshiba Corporation, Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Company, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069187351","display_name":"I. Kunishima","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"I. Kunishima","raw_affiliation_strings":["Semiconductor Company, Toshiba Corporation, Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Company, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100514976","display_name":"K. Yamakawa","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Yamakawa","raw_affiliation_strings":["Semiconductor Company, Toshiba Corporation, Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Company, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072558626","display_name":"S. Sugimoto","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S. Sugimoto","raw_affiliation_strings":["Semiconductor Company, Toshiba Corporation, Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Company, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050556210","display_name":"D. Takashima","orcid":"https://orcid.org/0000-0002-8527-067X"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"D. Takashima","raw_affiliation_strings":["Semiconductor Company, Toshiba Corporation, Yokohama, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Company, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033564892","display_name":"H.-O. Joachim","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"H. Joachim","raw_affiliation_strings":["Infineon Technologies, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Infineon Technologies, Tokyo, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082640381","display_name":"N. Rehm","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"N. Rehm","raw_affiliation_strings":["Infineon Technologies, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Infineon Technologies, Tokyo, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027160369","display_name":"J. Wohlfahrt","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"J. Wohlfahrt","raw_affiliation_strings":["Infineon Technologies, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Infineon Technologies, Tokyo, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111883437","display_name":"N. Nagel","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"N. Nagel","raw_affiliation_strings":["Infineon Technologies, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Infineon Technologies, Tokyo, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002188667","display_name":"G. Beitel","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"G. Beitel","raw_affiliation_strings":["Infineon Technologies, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Infineon Technologies, Tokyo, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067057048","display_name":"M. Jacob","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"M. Jacob","raw_affiliation_strings":["Infineon Technologies, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Infineon Technologies, Tokyo, Japan","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5027215003","display_name":"T. Roehr","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"T. Roehr","raw_affiliation_strings":["Infineon Technologies, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Infineon Technologies, Tokyo, Japan","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.5587,"has_fulltext":false,"cited_by_count":17,"citation_normalized_percentile":{"value":0.89521839,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"38","issue":"11","first_page":"1911","last_page":"1919"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9973999857902527,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9973999857902527,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectric-ram","display_name":"Ferroelectric RAM","score":0.7941189408302307},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.6618556380271912},{"id":"https://openalex.org/keywords/non-volatile-random-access-memory","display_name":"Non-volatile random-access memory","score":0.6023062467575073},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.596621572971344},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.5866259932518005},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.4995458126068115},{"id":"https://openalex.org/keywords/standby-power","display_name":"Standby power","score":0.46843844652175903},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4644280672073364},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.4458047151565552},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4188157618045807},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.39715954661369324},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.3755035996437073},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.3217843770980835},{"id":"https://openalex.org/keywords/computer-memory","display_name":"Computer memory","score":0.24535241723060608},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.23081764578819275},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.22047945857048035},{"id":"https://openalex.org/keywords/memory-refresh","display_name":"Memory refresh","score":0.21556806564331055},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1209457516670227},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.11359301209449768}],"concepts":[{"id":"https://openalex.org/C161164327","wikidata":"https://www.wikidata.org/wiki/Q703656","display_name":"Ferroelectric RAM","level":4,"score":0.7941189408302307},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.6618556380271912},{"id":"https://openalex.org/C34172316","wikidata":"https://www.wikidata.org/wiki/Q499024","display_name":"Non-volatile random-access memory","level":5,"score":0.6023062467575073},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.596621572971344},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.5866259932518005},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.4995458126068115},{"id":"https://openalex.org/C7140552","wikidata":"https://www.wikidata.org/wiki/Q1366402","display_name":"Standby power","level":3,"score":0.46843844652175903},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4644280672073364},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.4458047151565552},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4188157618045807},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.39715954661369324},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.3755035996437073},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.3217843770980835},{"id":"https://openalex.org/C92855701","wikidata":"https://www.wikidata.org/wiki/Q5830907","display_name":"Computer memory","level":3,"score":0.24535241723060608},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23081764578819275},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.22047945857048035},{"id":"https://openalex.org/C87907426","wikidata":"https://www.wikidata.org/wiki/Q6815755","display_name":"Memory refresh","level":4,"score":0.21556806564331055},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1209457516670227},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.11359301209449768}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2003.818161","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2003.818161","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.5,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W2100954356","https://openalex.org/W2102278748","https://openalex.org/W2116440095","https://openalex.org/W2152285308","https://openalex.org/W2167326092","https://openalex.org/W4233001640","https://openalex.org/W4238441389"],"related_works":["https://openalex.org/W2099729013","https://openalex.org/W1993178305","https://openalex.org/W3209704453","https://openalex.org/W2505369450","https://openalex.org/W229381242","https://openalex.org/W2601736132","https://openalex.org/W2113422672","https://openalex.org/W2788525133","https://openalex.org/W2485448009","https://openalex.org/W2171162600"],"abstract_inverted_index":{"This":[0],"paper":[1],"demonstrates":[2],"the":[3,34,49,70,76,87,104,112,127,134,139,160,164,181,188,191],"32-Mb":[4],"chain":[5,113,128],"ferroelectric":[6],"RAM":[7],"(chain":[8],"FeRAM)":[9],"with":[10,118,143],"0.2-\u03bcm":[11],"three-metal":[12,50],"CMOS":[13],"technology.":[14],"A":[15],"small":[16,35],"die":[17],"size":[18,37,90,106],"of":[19,27,78,111,115,163,183,190],"96":[20],"mm2and":[21],"a":[22,53,85,99,122,147],"high":[23],"cell/chip":[24],"area":[25,62,67,77],"efficiency":[26],"65.6%":[28],"are":[29],"realized":[30],"not":[31],"only":[32],"by":[33,43],"cell":[36,56,89,136],"using":[38],"capacitor-on-plug":[39],"technology":[40],"but":[41],"also":[42,177],"two":[44],"key":[45,148],"techniques":[46],"that":[47,59],"utilize":[48],"process:":[51],"1)":[52],"compact":[54],"memory":[55,135],"block":[57,65],"structure":[58],"eliminates":[60],"plateline":[61],"and":[63,68,81,103,159,201],"reduces":[64,75],"selector":[66],"2)":[69],"segment/stitch":[71],"array":[72],"architecture":[73],"which":[74,95],"row":[79],"decoders":[80],"plate":[82],"drivers.":[83],"As":[84],"result,":[86],"average":[88],"shrinks":[91],"to":[92,109,126,132,168,179],"1.875":[93],"\u03bcm2,":[94],"is":[96,107,130,146,157,166,176],"smaller":[97],"than":[98],"0.13-\u03bcm":[100],"SRAM":[101,145],"cell,":[102],"chip":[105,165,194],"reduced":[108],"70%":[110],"FeRAM":[114,129],"conventional":[116],"configuration":[117],"two-metal":[119],"process.":[120],"Moreover,":[121],"power-on/off":[123],"sequence":[124],"suitable":[125],"introduced":[131,158],"protect":[133],"data":[137],"from":[138],"startup":[140,189],"noise.":[141],"Compatibility":[142],"low-power":[144],"issue":[149],"for":[150],"mobile":[151],"applications.":[152],"The":[153,171,193],"low-standby-current":[154],"bias":[155],"generator":[156],"standby":[161],"current":[162],"suppressed":[167],"3":[169],"\u03bcA.":[170],"modified":[172],"address":[173,185],"access":[174,196],"mode":[175],"adopted":[178],"eliminate":[180],"need":[182],"intentional":[184],"transition":[186],"after":[187],"chip.":[192],"enable":[195],"time":[197,203],"was":[198,204],"50":[199],"ns":[200,206],"cycle":[202],"75":[205],"at":[207],"3.0-V":[208],"V/sub":[209],"dd/.":[210]},"counts_by_year":[{"year":2013,"cited_by_count":1}],"updated_date":"2026-07-29T09:40:50.615796","created_date":"2025-10-10T00:00:00"}