{"id":"https://openalex.org/W1486283379","doi":"https://doi.org/10.1109/jssc.2002.802352","title":"High-performance 1-Gb-NAND flash memory with 0.12-\u03bcm technology","display_name":"High-performance 1-Gb-NAND flash memory with 0.12-\u03bcm technology","publication_year":2002,"publication_date":"2002-11-01","ids":{"openalex":"https://openalex.org/W1486283379","doi":"https://doi.org/10.1109/jssc.2002.802352","mag":"1486283379"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2002.802352","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2002.802352","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5073633026","display_name":"June Lee","orcid":"https://orcid.org/0000-0003-3295-9091"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"June Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","Memory Div., Samsung Electron., Kyunggi, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Div., Samsung Electron., Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025099105","display_name":"Heung-Soo Im","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Heung-Soo Im","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","Memory Div., Samsung Electron., Kyunggi, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Div., Samsung Electron., Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109054902","display_name":"Dae-Seok Byeon","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dae-Seok Byeon","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","Memory Div., Samsung Electron., Kyunggi, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Div., Samsung Electron., Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005680261","display_name":"Kyeong-Han Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyeong-Han Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","Memory Div., Samsung Electron., Kyunggi, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Div., Samsung Electron., Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043166179","display_name":"Dong-Hyuk Chae","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dong-Hyuk Chae","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","Memory Div., Samsung Electron., Kyunggi, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Div., Samsung Electron., Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008346098","display_name":"Kyong-Hwa Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyong-Hwa Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","Memory Div., Samsung Electron., Kyunggi, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Div., Samsung Electron., Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110575103","display_name":"Sang Won Hwang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sang Won Hwang","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","Memory Div., Samsung Electron., Kyunggi, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Div., Samsung Electron., Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101432245","display_name":"Sung-Soo Lee","orcid":"https://orcid.org/0009-0005-5341-245X"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sung-Soo Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","Memory Div., Samsung Electron., Kyunggi, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Div., Samsung Electron., Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037872413","display_name":"Young-Ho Lim","orcid":"https://orcid.org/0000-0002-4446-3854"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Young-Ho Lim","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","Memory Div., Samsung Electron., Kyunggi, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Div., Samsung Electron., Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030744436","display_name":"Jae-Duk Lee","orcid":"https://orcid.org/0000-0001-5581-2784"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jae-Duk Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","Memory Div., Samsung Electron., Kyunggi, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Div., Samsung Electron., Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102472366","display_name":"Jungdal Choi","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jung-Dal Choi","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","Memory Div., Samsung Electron., Kyunggi, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Div., Samsung Electron., Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108282059","display_name":"Young-Il Seo","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Young-Il Seo","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","Memory Div., Samsung Electron., Kyunggi, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Div., Samsung Electron., Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043776204","display_name":"Jong\u2010Sik Lee","orcid":"https://orcid.org/0000-0002-9101-6811"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jong-Sik Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","Memory Div., Samsung Electron., Kyunggi, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Div., Samsung Electron., Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109991730","display_name":"Kang-Deog Suh","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kang-Deog Suh","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","Memory Div., Samsung Electron., Kyunggi, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Limited, Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Div., Samsung Electron., Kyunggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":14,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.3441,"has_fulltext":false,"cited_by_count":13,"citation_normalized_percentile":{"value":0.53805134,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":"37","issue":"11","first_page":"1502","last_page":"1509"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nand-gate","display_name":"NAND gate","score":0.7839418053627014},{"id":"https://openalex.org/keywords/flash","display_name":"Flash (photography)","score":0.5991915464401245},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5573548078536987},{"id":"https://openalex.org/keywords/cache","display_name":"Cache","score":0.527691125869751},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.5253050923347473},{"id":"https://openalex.org/keywords/byte","display_name":"Byte","score":0.5247131586074829},{"id":"https://openalex.org/keywords/throughput","display_name":"Throughput","score":0.4991943836212158},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.49779701232910156},{"id":"https://openalex.org/keywords/block","display_name":"Block (permutation group theory)","score":0.4722297191619873},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.4525928795337677},{"id":"https://openalex.org/keywords/flash-memory","display_name":"Flash memory","score":0.4392321705818176},{"id":"https://openalex.org/keywords/page","display_name":"Page","score":0.41861847043037415},{"id":"https://openalex.org/keywords/parallel-computing","display_name":"Parallel computing","score":0.3910865783691406},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2957637906074524},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.26050207018852234},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.25548404455184937},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2506653666496277},{"id":"https://openalex.org/keywords/operating-system","display_name":"Operating system","score":0.19817966222763062},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.19103586673736572},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1238580048084259},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.10395008325576782},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.08559244871139526},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.08429300785064697}],"concepts":[{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.7839418053627014},{"id":"https://openalex.org/C2777526259","wikidata":"https://www.wikidata.org/wiki/Q221836","display_name":"Flash (photography)","level":2,"score":0.5991915464401245},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5573548078536987},{"id":"https://openalex.org/C115537543","wikidata":"https://www.wikidata.org/wiki/Q165596","display_name":"Cache","level":2,"score":0.527691125869751},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.5253050923347473},{"id":"https://openalex.org/C43364308","wikidata":"https://www.wikidata.org/wiki/Q8799","display_name":"Byte","level":2,"score":0.5247131586074829},{"id":"https://openalex.org/C157764524","wikidata":"https://www.wikidata.org/wiki/Q1383412","display_name":"Throughput","level":3,"score":0.4991943836212158},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.49779701232910156},{"id":"https://openalex.org/C2777210771","wikidata":"https://www.wikidata.org/wiki/Q4927124","display_name":"Block (permutation group theory)","level":2,"score":0.4722297191619873},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.4525928795337677},{"id":"https://openalex.org/C2776531357","wikidata":"https://www.wikidata.org/wiki/Q174077","display_name":"Flash memory","level":2,"score":0.4392321705818176},{"id":"https://openalex.org/C33925742","wikidata":"https://www.wikidata.org/wiki/Q361698","display_name":"Page","level":2,"score":0.41861847043037415},{"id":"https://openalex.org/C173608175","wikidata":"https://www.wikidata.org/wiki/Q232661","display_name":"Parallel computing","level":1,"score":0.3910865783691406},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2957637906074524},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.26050207018852234},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.25548404455184937},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2506653666496277},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.19817966222763062},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.19103586673736572},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1238580048084259},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.10395008325576782},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.08559244871139526},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.08429300785064697},{"id":"https://openalex.org/C555944384","wikidata":"https://www.wikidata.org/wiki/Q249","display_name":"Wireless","level":2,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2002.802352","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2002.802352","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.6399999856948853}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1987919244","https://openalex.org/W1999865975","https://openalex.org/W2075061514","https://openalex.org/W2117093682","https://openalex.org/W2135210684","https://openalex.org/W2153209285","https://openalex.org/W2162415926","https://openalex.org/W2788745795","https://openalex.org/W4249203370"],"related_works":["https://openalex.org/W2120144651","https://openalex.org/W2104684727","https://openalex.org/W2004803949","https://openalex.org/W1969406614","https://openalex.org/W4385192256","https://openalex.org/W2153209285","https://openalex.org/W2132827075","https://openalex.org/W2042090903","https://openalex.org/W2027819842","https://openalex.org/W2197552133"],"abstract_inverted_index":{"A":[0,52,71,120],"1.8-V,":[1],"1-Gb":[2],"NAND":[3,20],"flash":[4],"memory":[5],"is":[6,31,98,110,131],"fabricated":[7],"with":[8],"0.12-/spl":[9],"mu/m":[10],"CMOS":[11],"STI":[12],"process":[13],"technology.":[14],"For":[15],"higher":[16],"integration,":[17],"a":[18],"32-cell":[19],"structure,":[21],"which":[22],"enables":[23],"row":[24],"decoder":[25],"layout":[26],"in":[27],"one":[28],"block":[29],"pitch,":[30],"applied":[32,73],"for":[33,100],"the":[34,65],"first":[35],"time.":[36],"Resulting":[37],"cell":[38],"and":[39,47,77,117],"die":[40],"sizes":[41],"are":[42],"0.076":[43],"/spl":[44],"mu/m/sup":[45],"2/":[46],"129.6":[48],"mm/sup":[49],"2/,":[50],"respectively.":[51],"pseudo-4-phase":[53],"charge":[54],"pump":[55],"circuit":[56],"can":[57],"generate":[58],"up":[59],"to":[60,88],"20":[61],"V":[62,126],"even":[63],"under":[64],"supply":[66],"voltage":[67],"of":[68,81,91,107,124],"1.6":[69],"V.":[70],"newly":[72],"cache":[74],"program":[75,89],"function":[76,97],"expanded":[78],"page":[79,95,118],"size":[80],"(2":[82],"k":[83],"+":[84],"64)":[85],"byte":[86],"lead":[87],"throughput":[90,106],"7":[92],"MB/s.":[93],"The":[94,104],"copy-back":[96],"provided":[99],"on-chip":[101],"garbage":[102],"collection.":[103],"read":[105],"27":[108],"MB/s":[109],"achieved":[111],"by":[112],"simply":[113],"expanding":[114],"I/O":[115],"width":[116],"size.":[119],"measured":[121],"disturbance":[122],"free-window":[123],"3.5":[125],"at":[127],"1.5":[128],"V-V/sub":[129],"DD/":[130],"obtained.":[132]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2019,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}