{"id":"https://openalex.org/W4362636727","doi":"https://doi.org/10.1109/jproc.2023.3254279","title":"Gallium Nitride Versus Silicon Carbide: Beyond the Switching Power Supply [Industry View]","display_name":"Gallium Nitride Versus Silicon Carbide: Beyond the Switching Power Supply [Industry View]","publication_year":2023,"publication_date":"2023-04-01","ids":{"openalex":"https://openalex.org/W4362636727","doi":"https://doi.org/10.1109/jproc.2023.3254279"},"language":"en","primary_location":{"id":"doi:10.1109/jproc.2023.3254279","is_oa":true,"landing_page_url":"https://doi.org/10.1109/jproc.2023.3254279","pdf_url":"https://ieeexplore.ieee.org/ielx7/5/10092901/10092948.pdf","source":{"id":"https://openalex.org/S68686220","display_name":"Proceedings of the IEEE","issn_l":"0018-9219","issn":["0018-9219","1558-2256"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://ieeexplore.ieee.org/ielx7/5/10092901/10092948.pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5011558464","display_name":"Umesh K. Mishra","orcid":"https://orcid.org/0000-0001-8084-9247"},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Umesh K. Mishra","raw_affiliation_strings":["University of California Santa Barbara, Santa Barbara, CA, USA"],"affiliations":[{"raw_affiliation_string":"University of California Santa Barbara, Santa Barbara, CA, USA","institution_ids":["https://openalex.org/I154570441"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5011558464"],"corresponding_institution_ids":["https://openalex.org/I154570441"],"apc_list":null,"apc_paid":null,"fwci":1.7404,"has_fulltext":true,"cited_by_count":13,"citation_normalized_percentile":{"value":0.84313153,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":99},"biblio":{"volume":"111","issue":"4","first_page":"322","last_page":"328"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9957000017166138,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9919999837875366,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.7123368978500366},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.7110836505889893},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4712030589580536},{"id":"https://openalex.org/keywords/nitride","display_name":"Nitride","score":0.44104519486427307},{"id":"https://openalex.org/keywords/carbide","display_name":"Carbide","score":0.4282301366329193},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.42600396275520325},{"id":"https://openalex.org/keywords/spectrum","display_name":"Spectrum (functional analysis)","score":0.42443645000457764},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.4146905243396759},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.411484956741333},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.41038978099823},{"id":"https://openalex.org/keywords/business","display_name":"Business","score":0.36492854356765747},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2799544036388397},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.26900649070739746},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.15219992399215698},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.12499022483825684}],"concepts":[{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.7123368978500366},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.7110836505889893},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4712030589580536},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.44104519486427307},{"id":"https://openalex.org/C5335593","wikidata":"https://www.wikidata.org/wiki/Q241906","display_name":"Carbide","level":2,"score":0.4282301366329193},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.42600396275520325},{"id":"https://openalex.org/C156778621","wikidata":"https://www.wikidata.org/wiki/Q1365748","display_name":"Spectrum (functional analysis)","level":2,"score":0.42443645000457764},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.4146905243396759},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.411484956741333},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.41038978099823},{"id":"https://openalex.org/C144133560","wikidata":"https://www.wikidata.org/wiki/Q4830453","display_name":"Business","level":0,"score":0.36492854356765747},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2799544036388397},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.26900649070739746},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.15219992399215698},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.12499022483825684},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jproc.2023.3254279","is_oa":true,"landing_page_url":"https://doi.org/10.1109/jproc.2023.3254279","pdf_url":"https://ieeexplore.ieee.org/ielx7/5/10092901/10092948.pdf","source":{"id":"https://openalex.org/S68686220","display_name":"Proceedings of the IEEE","issn_l":"0018-9219","issn":["0018-9219","1558-2256"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1109/jproc.2023.3254279","is_oa":true,"landing_page_url":"https://doi.org/10.1109/jproc.2023.3254279","pdf_url":"https://ieeexplore.ieee.org/ielx7/5/10092901/10092948.pdf","source":{"id":"https://openalex.org/S68686220","display_name":"Proceedings of the IEEE","issn_l":"0018-9219","issn":["0018-9219","1558-2256"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE","raw_type":"journal-article"},"sustainable_development_goals":[{"score":0.4699999988079071,"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure"}],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4362636727.pdf","grobid_xml":"https://content.openalex.org/works/W4362636727.grobid-xml"},"referenced_works_count":2,"referenced_works":["https://openalex.org/W2891113010","https://openalex.org/W6839260951"],"related_works":["https://openalex.org/W92683889","https://openalex.org/W2055936514","https://openalex.org/W2811452391","https://openalex.org/W2606334748","https://openalex.org/W2115206312","https://openalex.org/W2000487630","https://openalex.org/W307570395","https://openalex.org/W1791605777","https://openalex.org/W2017113730","https://openalex.org/W2109359929"],"abstract_inverted_index":{"This":[0],"article":[1],"was":[2],"jointly":[3],"produced":[4],"by":[5],"IEEE":[6,12],"Spectrum":[7],"and":[8],"PROCEEDINGS":[9],"OF":[10],"THE":[11],"with":[13],"similar":[14],"versions":[15],"published":[16],"in":[17],"both":[18],"publications.":[19]},"counts_by_year":[{"year":2025,"cited_by_count":7},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}