{"id":"https://openalex.org/W2610194370","doi":"https://doi.org/10.1109/jproc.2017.2692178","title":"InP HBT Technologies for THz Integrated Circuits","display_name":"InP HBT Technologies for THz Integrated Circuits","publication_year":2017,"publication_date":"2017-05-02","ids":{"openalex":"https://openalex.org/W2610194370","doi":"https://doi.org/10.1109/jproc.2017.2692178","mag":"2610194370"},"language":"en","primary_location":{"id":"doi:10.1109/jproc.2017.2692178","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jproc.2017.2692178","pdf_url":null,"source":{"id":"https://openalex.org/S68686220","display_name":"Proceedings of the IEEE","issn_l":"0018-9219","issn":["0018-9219","1558-2256"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5010418756","display_name":"Miguel Urteaga","orcid":"https://orcid.org/0000-0001-5127-929X"},"institutions":[{"id":"https://openalex.org/I880619579","display_name":"Teledyne Technologies (United States)","ror":"https://ror.org/00a1gne75","country_code":"US","type":"company","lineage":["https://openalex.org/I880619579"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Miguel Urteaga","raw_affiliation_strings":["Teledyne Scientific Company, Thousand Oaks, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Teledyne Scientific Company, Thousand Oaks, CA, USA","institution_ids":["https://openalex.org/I880619579"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079638084","display_name":"Zach Griffith","orcid":"https://orcid.org/0000-0002-9102-4299"},"institutions":[{"id":"https://openalex.org/I880619579","display_name":"Teledyne Technologies (United States)","ror":"https://ror.org/00a1gne75","country_code":"US","type":"company","lineage":["https://openalex.org/I880619579"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Zach Griffith","raw_affiliation_strings":["Teledyne Scientific Company, Thousand Oaks, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Teledyne Scientific Company, Thousand Oaks, CA, USA","institution_ids":["https://openalex.org/I880619579"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016357166","display_name":"Munkyo Seo","orcid":"https://orcid.org/0000-0002-0691-1783"},"institutions":[{"id":"https://openalex.org/I848706","display_name":"Sungkyunkwan University","ror":"https://ror.org/04q78tk20","country_code":"KR","type":"education","lineage":["https://openalex.org/I848706"]},{"id":"https://openalex.org/I880619579","display_name":"Teledyne Technologies (United States)","ror":"https://ror.org/00a1gne75","country_code":"US","type":"company","lineage":["https://openalex.org/I880619579"]}],"countries":["KR","US"],"is_corresponding":false,"raw_author_name":"Munkyo Seo","raw_affiliation_strings":["Department of Electrical Engineering, Sungkyunkwan University, South Korea","Teledyne Scientific Company, Thousand Oaks, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Sungkyunkwan University, South Korea","institution_ids":["https://openalex.org/I848706"]},{"raw_affiliation_string":"Teledyne Scientific Company, Thousand Oaks, CA, USA","institution_ids":["https://openalex.org/I880619579"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104472339","display_name":"Jonathan Hacker","orcid":"https://orcid.org/0000-0002-7712-0719"},"institutions":[{"id":"https://openalex.org/I880619579","display_name":"Teledyne Technologies (United States)","ror":"https://ror.org/00a1gne75","country_code":"US","type":"company","lineage":["https://openalex.org/I880619579"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jonathan Hacker","raw_affiliation_strings":["Teledyne Scientific Company, Thousand Oaks, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Teledyne Scientific Company, Thousand Oaks, CA, USA","institution_ids":["https://openalex.org/I880619579"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5103254043","display_name":"M.J.W. Rodwell","orcid":"https://orcid.org/0000-0002-5989-1616"},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mark J. W. Rodwell","raw_affiliation_strings":["Electrical and Computer Engineering Department, University of California, Santa Barbara, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrical and Computer Engineering Department, University of California, Santa Barbara, CA, USA","institution_ids":["https://openalex.org/I154570441"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":14.034,"has_fulltext":false,"cited_by_count":262,"citation_normalized_percentile":{"value":0.99197684,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":98,"max":100},"biblio":{"volume":"105","issue":"6","first_page":"1051","last_page":"1067"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.9980999827384949,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10262","display_name":"Microwave Engineering and Waveguides","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.9194835424423218},{"id":"https://openalex.org/keywords/terahertz-radiation","display_name":"Terahertz radiation","score":0.712145209312439},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.6594998240470886},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.5871915221214294},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5864270925521851},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.5856196284294128},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5614261627197266},{"id":"https://openalex.org/keywords/indium-phosphide","display_name":"Indium phosphide","score":0.5243508815765381},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4779927134513855},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4499253034591675},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.4322248697280884},{"id":"https://openalex.org/keywords/circuit-design","display_name":"Circuit design","score":0.42882102727890015},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.41070711612701416},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.26631835103034973},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.204571932554245},{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"Gallium arsenide","score":0.18688172101974487},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.14130350947380066},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.12230679392814636}],"concepts":[{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.9194835424423218},{"id":"https://openalex.org/C107816215","wikidata":"https://www.wikidata.org/wiki/Q647887","display_name":"Terahertz radiation","level":2,"score":0.712145209312439},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.6594998240470886},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.5871915221214294},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5864270925521851},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.5856196284294128},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5614261627197266},{"id":"https://openalex.org/C2776152967","wikidata":"https://www.wikidata.org/wiki/Q416291","display_name":"Indium phosphide","level":3,"score":0.5243508815765381},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4779927134513855},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4499253034591675},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.4322248697280884},{"id":"https://openalex.org/C190560348","wikidata":"https://www.wikidata.org/wiki/Q3245116","display_name":"Circuit design","level":2,"score":0.42882102727890015},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.41070711612701416},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.26631835103034973},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.204571932554245},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.18688172101974487},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.14130350947380066},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.12230679392814636}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jproc.2017.2692178","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jproc.2017.2692178","pdf_url":null,"source":{"id":"https://openalex.org/S68686220","display_name":"Proceedings of the IEEE","issn_l":"0018-9219","issn":["0018-9219","1558-2256"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.7699999809265137}],"awards":[{"id":"https://openalex.org/G7602918131","display_name":null,"funder_award_id":"HR0011-09-C-0060","funder_id":"https://openalex.org/F4320332180","funder_display_name":"Defense Advanced Research Projects Agency"}],"funders":[{"id":"https://openalex.org/F4320332180","display_name":"Defense Advanced Research Projects Agency","ror":"https://ror.org/02caytj08"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":89,"referenced_works":["https://openalex.org/W601962549","https://openalex.org/W1485113777","https://openalex.org/W1492141685","https://openalex.org/W1496480980","https://openalex.org/W1578592071","https://openalex.org/W1602297169","https://openalex.org/W1937060092","https://openalex.org/W1947890848","https://openalex.org/W1949171770","https://openalex.org/W1963756629","https://openalex.org/W1965818771","https://openalex.org/W1974416961","https://openalex.org/W1977726996","https://openalex.org/W1978903191","https://openalex.org/W1980301043","https://openalex.org/W1990104550","https://openalex.org/W1995672603","https://openalex.org/W1997684229","https://openalex.org/W1998340256","https://openalex.org/W1998340810","https://openalex.org/W2000888183","https://openalex.org/W2001053426","https://openalex.org/W2003307992","https://openalex.org/W2003414785","https://openalex.org/W2006163907","https://openalex.org/W2013933530","https://openalex.org/W2015355974","https://openalex.org/W2018495830","https://openalex.org/W2021569465","https://openalex.org/W2023360128","https://openalex.org/W2023575859","https://openalex.org/W2032262202","https://openalex.org/W2034367493","https://openalex.org/W2038441349","https://openalex.org/W2042901954","https://openalex.org/W2052931787","https://openalex.org/W2057263096","https://openalex.org/W2058690660","https://openalex.org/W2062436861","https://openalex.org/W2065805252","https://openalex.org/W2068822279","https://openalex.org/W2072194576","https://openalex.org/W2076955279","https://openalex.org/W2077327772","https://openalex.org/W2078544403","https://openalex.org/W2090056986","https://openalex.org/W2096389934","https://openalex.org/W2099145926","https://openalex.org/W2099689722","https://openalex.org/W2101010201","https://openalex.org/W2109481363","https://openalex.org/W2113769048","https://openalex.org/W2128361799","https://openalex.org/W2130646365","https://openalex.org/W2144056948","https://openalex.org/W2144177517","https://openalex.org/W2144221897","https://openalex.org/W2146636277","https://openalex.org/W2147752501","https://openalex.org/W2155807160","https://openalex.org/W2157341007","https://openalex.org/W2157808104","https://openalex.org/W2159829399","https://openalex.org/W2162329841","https://openalex.org/W2164118831","https://openalex.org/W2165108684","https://openalex.org/W2169612939","https://openalex.org/W2172101759","https://openalex.org/W2188438365","https://openalex.org/W2313700323","https://openalex.org/W2314855389","https://openalex.org/W2315980805","https://openalex.org/W2318871569","https://openalex.org/W2331644415","https://openalex.org/W2332005740","https://openalex.org/W2332415292","https://openalex.org/W2369764476","https://openalex.org/W2583898479","https://openalex.org/W2584026119","https://openalex.org/W4233152841","https://openalex.org/W6629441043","https://openalex.org/W6640471082","https://openalex.org/W6645128165","https://openalex.org/W6649954045","https://openalex.org/W6656229731","https://openalex.org/W6660935254","https://openalex.org/W6673170658","https://openalex.org/W6679145232","https://openalex.org/W6681196226"],"related_works":["https://openalex.org/W1567282658","https://openalex.org/W2732217704","https://openalex.org/W2393767093","https://openalex.org/W112868940","https://openalex.org/W2102511360","https://openalex.org/W2370543964","https://openalex.org/W1169114565","https://openalex.org/W3151307272","https://openalex.org/W1013142806","https://openalex.org/W2066462051"],"abstract_inverted_index":{"Highly":[0],"scaled":[1],"indium":[2],"phosphide":[3],"(InP)":[4],"heterojunction":[5],"bipolar":[6],"transistor":[7,120],"(HBT)":[8],"technologies":[9,81],"have":[10],"been":[11,28],"demonstrated":[12],"with":[13,59],"maximum":[14],"frequencies":[15,128],"of":[16,21,34,56,66,104],"oscillation":[17],"(":[18],"f":[19],"max)":[20],">1":[22],"THz":[23,70,127],"and":[24,53,68,91,94,112,122],"circuit":[25,114,124],"operation":[26],"has":[27],"extended":[29],"into":[30],"the":[31,35,64,102,105],"lower":[32],"end":[33],"terahertz":[36],"(THz)":[37],"frequency":[38],"band.":[39],"InP":[40,79,109],"HBTs":[41],"offer":[42],"high":[43,54],"radio-frequency":[44],"(RF)":[45],"output":[46],"power":[47,84],"density,":[48],"millivolt":[49],"(mV)":[50],"threshold":[51],"uniformity,":[52],"levels":[55],"integration.":[57],"Integration":[58],"multilevel":[60],"thin-film":[61],"wiring":[62],"permits":[63],"realization":[65],"compact":[67],"complex":[69],"monolithic":[71],"integrated":[72,96,113],"circuits":[73],"(TMICs).":[74],"Circuit":[75],"results":[76],"reported":[77],"from":[78],"HBT":[80,110],"include:":[82],"200-mW":[83],"amplifiers":[85,90],"at":[86,126],"210":[87],"GHz,":[88],"670-GHz":[89],"fundamental":[92],"oscillators,":[93],"fully":[95],"600-GHz":[97],"transmitter":[98],"circuits.":[99],"We":[100],"review":[101],"state":[103],"art":[106],"in":[107,118,123],"THz-capable":[108],"devices":[111],"(IC)":[115],"technologies.":[116],"Challenges":[117],"extending":[119],"bandwidth":[121],"design":[125],"will":[129],"also":[130],"be":[131],"addressed.":[132]},"counts_by_year":[{"year":2026,"cited_by_count":8},{"year":2025,"cited_by_count":26},{"year":2024,"cited_by_count":25},{"year":2023,"cited_by_count":33},{"year":2022,"cited_by_count":34},{"year":2021,"cited_by_count":40},{"year":2020,"cited_by_count":34},{"year":2019,"cited_by_count":38},{"year":2018,"cited_by_count":18},{"year":2017,"cited_by_count":6}],"updated_date":"2026-06-13T07:54:00.901334","created_date":"2025-10-10T00:00:00"}