{"id":"https://openalex.org/W2088991913","doi":"https://doi.org/10.1109/jproc.2013.2278616","title":"Rugged Electrical Power Switching in Semiconductors: A Systems Approach","display_name":"Rugged Electrical Power Switching in Semiconductors: A Systems Approach","publication_year":2013,"publication_date":"2013-09-11","ids":{"openalex":"https://openalex.org/W2088991913","doi":"https://doi.org/10.1109/jproc.2013.2278616","mag":"2088991913"},"language":"en","primary_location":{"id":"doi:10.1109/jproc.2013.2278616","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jproc.2013.2278616","pdf_url":null,"source":{"id":"https://openalex.org/S68686220","display_name":"Proceedings of the IEEE","issn_l":"0018-9219","issn":["0018-9219","1558-2256"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5075834929","display_name":"K. Shenai","orcid":"https://orcid.org/0000-0001-9387-9293"},"institutions":[{"id":"https://openalex.org/I1282105669","display_name":"Argonne National Laboratory","ror":"https://ror.org/05gvnxz63","country_code":"US","type":"facility","lineage":["https://openalex.org/I1282105669","https://openalex.org/I1330989302","https://openalex.org/I39565521","https://openalex.org/I40347166"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Krishna Shenai","raw_affiliation_strings":["Energy Systems Division, Argonne National Laboratory, Argonne, IL, USA","Energy Syst. Div., Argonne Nat. Lab., Argonne, IL, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Energy Systems Division, Argonne National Laboratory, Argonne, IL, USA","institution_ids":["https://openalex.org/I1282105669"]},{"raw_affiliation_string":"Energy Syst. Div., Argonne Nat. Lab., Argonne, IL, USA","institution_ids":["https://openalex.org/I1282105669"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085804402","display_name":"Michael Dudley","orcid":"https://orcid.org/0000-0001-9576-4924"},"institutions":[{"id":"https://openalex.org/I59553526","display_name":"Stony Brook University","ror":"https://ror.org/05qghxh33","country_code":"US","type":"education","lineage":["https://openalex.org/I59553526"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Michael Dudley","raw_affiliation_strings":["Department of Materials Science and Engineering, Sony Brook University, Stony Brook, NY, USA","Dept. of Mater. Sci. & Eng., Sony Brook Univ., Stony Brook, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, Sony Brook University, Stony Brook, NY, USA","institution_ids":["https://openalex.org/I59553526"]},{"raw_affiliation_string":"Dept. of Mater. Sci. & Eng., Sony Brook Univ., Stony Brook, NY, USA","institution_ids":["https://openalex.org/I59553526"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5083293297","display_name":"R. F. Davis","orcid":"https://orcid.org/0000-0002-4437-0885"},"institutions":[{"id":"https://openalex.org/I74973139","display_name":"Carnegie Mellon University","ror":"https://ror.org/05x2bcf33","country_code":"US","type":"education","lineage":["https://openalex.org/I74973139"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Robert F. Davis","raw_affiliation_strings":["Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA, USA","[Dept. of Mater. Sci. & Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA, USA","institution_ids":["https://openalex.org/I74973139"]},{"raw_affiliation_string":"[Dept. of Mater. Sci. & Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA]","institution_ids":["https://openalex.org/I74973139"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5075834929"],"corresponding_institution_ids":["https://openalex.org/I1282105669"],"apc_list":null,"apc_paid":null,"fwci":2.1598,"has_fulltext":false,"cited_by_count":18,"citation_normalized_percentile":{"value":0.88840047,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"102","issue":"1","first_page":"35","last_page":"52"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.7330284118652344},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.7110507488250732},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6531729698181152},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.6011353731155396},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5525019764900208},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.55010986328125},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.5407339334487915},{"id":"https://openalex.org/keywords/power-module","display_name":"Power module","score":0.497527152299881},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.4888696074485779},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4844832122325897},{"id":"https://openalex.org/keywords/power-electronics","display_name":"Power electronics","score":0.48261556029319763},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4404011070728302},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.4326319098472595},{"id":"https://openalex.org/keywords/semiconductor-device","display_name":"Semiconductor device","score":0.42976823449134827},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.4132479727268219},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3614939749240875},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.3517112731933594},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.23721855878829956},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.22822251915931702},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.16498613357543945}],"concepts":[{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.7330284118652344},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.7110507488250732},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6531729698181152},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.6011353731155396},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5525019764900208},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.55010986328125},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.5407339334487915},{"id":"https://openalex.org/C141812795","wikidata":"https://www.wikidata.org/wiki/Q7236534","display_name":"Power module","level":3,"score":0.497527152299881},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4888696074485779},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4844832122325897},{"id":"https://openalex.org/C178911571","wikidata":"https://www.wikidata.org/wiki/Q593143","display_name":"Power electronics","level":3,"score":0.48261556029319763},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4404011070728302},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.4326319098472595},{"id":"https://openalex.org/C79635011","wikidata":"https://www.wikidata.org/wiki/Q175805","display_name":"Semiconductor device","level":3,"score":0.42976823449134827},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.4132479727268219},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3614939749240875},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.3517112731933594},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23721855878829956},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.22822251915931702},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.16498613357543945},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jproc.2013.2278616","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jproc.2013.2278616","pdf_url":null,"source":{"id":"https://openalex.org/S68686220","display_name":"Proceedings of the IEEE","issn_l":"0018-9219","issn":["0018-9219","1558-2256"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.44999998807907104}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":74,"referenced_works":["https://openalex.org/W170591249","https://openalex.org/W1501516973","https://openalex.org/W1871079844","https://openalex.org/W1903211270","https://openalex.org/W1965682282","https://openalex.org/W1968629523","https://openalex.org/W1976514630","https://openalex.org/W1982020470","https://openalex.org/W1982279417","https://openalex.org/W1982548936","https://openalex.org/W1983716170","https://openalex.org/W1984001832","https://openalex.org/W1984530868","https://openalex.org/W1992006585","https://openalex.org/W1998370272","https://openalex.org/W2013301048","https://openalex.org/W2020595161","https://openalex.org/W2022777662","https://openalex.org/W2024404789","https://openalex.org/W2026190097","https://openalex.org/W2028844105","https://openalex.org/W2031777511","https://openalex.org/W2037534041","https://openalex.org/W2045152307","https://openalex.org/W2045597494","https://openalex.org/W2051695182","https://openalex.org/W2055504639","https://openalex.org/W2056979930","https://openalex.org/W2057235046","https://openalex.org/W2060731576","https://openalex.org/W2073903310","https://openalex.org/W2081006968","https://openalex.org/W2082246719","https://openalex.org/W2084724133","https://openalex.org/W2085343787","https://openalex.org/W2088207765","https://openalex.org/W2091206019","https://openalex.org/W2100744089","https://openalex.org/W2106702230","https://openalex.org/W2108540690","https://openalex.org/W2110818398","https://openalex.org/W2111338987","https://openalex.org/W2114001304","https://openalex.org/W2114901214","https://openalex.org/W2121387826","https://openalex.org/W2121604213","https://openalex.org/W2127340147","https://openalex.org/W2128331819","https://openalex.org/W2132765713","https://openalex.org/W2134801730","https://openalex.org/W2135922513","https://openalex.org/W2136514507","https://openalex.org/W2139116530","https://openalex.org/W2144369392","https://openalex.org/W2149077554","https://openalex.org/W2151117236","https://openalex.org/W2154599024","https://openalex.org/W2159168707","https://openalex.org/W2168325664","https://openalex.org/W2169950706","https://openalex.org/W2170871238","https://openalex.org/W2217074165","https://openalex.org/W2317926026","https://openalex.org/W2330751663","https://openalex.org/W2486158944","https://openalex.org/W2537441778","https://openalex.org/W2542826189","https://openalex.org/W2936597696","https://openalex.org/W3135627198","https://openalex.org/W4285719527","https://openalex.org/W4302061079","https://openalex.org/W6606855625","https://openalex.org/W6676300936","https://openalex.org/W6722256828"],"related_works":["https://openalex.org/W274769908","https://openalex.org/W4386159450","https://openalex.org/W1535176231","https://openalex.org/W2184546999","https://openalex.org/W2365691020","https://openalex.org/W1969620786","https://openalex.org/W1481775718","https://openalex.org/W2545132375","https://openalex.org/W2559207033","https://openalex.org/W2328046896"],"abstract_inverted_index":{"Current":[0],"status":[1],"of":[2,27,126,129,151],"wide":[3],"bandgap":[4],"(WBG)":[5],"semiconductor":[6,153],"material":[7,41],"technology":[8],"is":[9,68,97,143],"evaluated":[10],"for":[11,145],"developing":[12],"high-performance":[13],"and":[14,122,133,148],"reliable":[15],"power":[16,29,37,58,72,87,111,115,137,154],"electronics":[17],"switching":[18],"converters.":[19],"The":[20],"study":[21],"takes":[22],"into":[23],"account":[24],"field":[25,83],"reliability":[26],"silicon":[28,46,71,110,130],"metal-oxide-semiconductor":[30],"field-effect":[31],"transistors":[32],"(MOSFETs)":[33],"in":[34,44,85,114],"compact":[35],"computer/telecom":[36],"supplies":[38],"where":[39],"residual":[40],"defects":[42],"present":[43],"the":[45,99,123,127],"space-charge":[47],"region":[48],"were":[49],"found":[50],"to":[51,60,82,106],"generate":[52],"local":[53],"microplasma":[54],"that":[55,70],"eventually":[56],"caused":[57],"MOSFETs":[59,73],"fail":[61],"under":[62],"long-term":[63],"repetitive":[64],"field-switching":[65],"conditions.":[66],"It":[67],"shown":[69,105],"with":[74,109],"increased":[75],"low-level":[76],"leakage":[77],"currents":[78],"are":[79,104],"more":[80],"prone":[81],"failures":[84,113],"high-density":[86],"supplies.":[88],"A":[89],"new":[90],"single-event":[91],"burnout":[92],"(SEB)":[93],"stress":[94,101],"testing":[95],"methodology":[96],"proposed;":[98],"SEB":[100],"test":[102],"results":[103,121],"correlate":[107],"well":[108],"MOSFET":[112],"supply":[116],"circuits.":[117],"Based":[118],"on":[119],"these":[120],"current":[124],"state":[125],"art":[128],"carbide":[131],"(SiC)":[132],"gallium":[134],"nitride":[135],"(GaN)":[136],"devices,":[138],"a":[139],"\u201creliability-driven\u201d":[140],"manufacturing":[141],"approach":[142],"recommended":[144],"rapid":[146],"commercialization":[147],"market":[149],"penetration":[150],"WBG":[152],"devices.":[155]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":3},{"year":2015,"cited_by_count":3},{"year":2014,"cited_by_count":3}],"updated_date":"2026-04-28T14:05:53.105641","created_date":"2025-10-10T00:00:00"}