{"id":"https://openalex.org/W1974425827","doi":"https://doi.org/10.1109/jproc.2013.2260112","title":"Fully Transparent Resistive Memory Employing Graphene Electrodes for Eliminating Undesired Surface Effects","display_name":"Fully Transparent Resistive Memory Employing Graphene Electrodes for Eliminating Undesired Surface Effects","publication_year":2013,"publication_date":"2013-05-20","ids":{"openalex":"https://openalex.org/W1974425827","doi":"https://doi.org/10.1109/jproc.2013.2260112","mag":"1974425827"},"language":"en","primary_location":{"id":"doi:10.1109/jproc.2013.2260112","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jproc.2013.2260112","pdf_url":null,"source":{"id":"https://openalex.org/S68686220","display_name":"Proceedings of the IEEE","issn_l":"0018-9219","issn":["0018-9219","1558-2256"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5080652019","display_name":"Po\u2010Kang Yang","orcid":"https://orcid.org/0000-0001-8642-0257"},"institutions":[{"id":"https://openalex.org/I16733864","display_name":"National Taiwan University","ror":"https://ror.org/05bqach95","country_code":"TW","type":"education","lineage":["https://openalex.org/I16733864"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Po-Kang Yang","raw_affiliation_strings":["Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan","Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan","institution_ids":["https://openalex.org/I16733864"]},{"raw_affiliation_string":"Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan","institution_ids":["https://openalex.org/I16733864"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102988146","display_name":"Wen-Yuan Chang","orcid":"https://orcid.org/0000-0002-5475-4882"},"institutions":[{"id":"https://openalex.org/I16733864","display_name":"National Taiwan University","ror":"https://ror.org/05bqach95","country_code":"TW","type":"education","lineage":["https://openalex.org/I16733864"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Wen-Yuan Chang","raw_affiliation_strings":["Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan","Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan","institution_ids":["https://openalex.org/I16733864"]},{"raw_affiliation_string":"Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan","institution_ids":["https://openalex.org/I16733864"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051653612","display_name":"Po-Yuan Teng","orcid":null},"institutions":[{"id":"https://openalex.org/I25846049","display_name":"National Tsing Hua University","ror":"https://ror.org/00zdnkx70","country_code":"TW","type":"education","lineage":["https://openalex.org/I25846049"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Po-Yuan Teng","raw_affiliation_strings":["Department of Electrical Engineering, Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan","Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I25846049"]},{"raw_affiliation_string":"Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan#TAB#","institution_ids":["https://openalex.org/I25846049"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034089014","display_name":"Shuo-Fang Jeng","orcid":null},"institutions":[{"id":"https://openalex.org/I25846049","display_name":"National Tsing Hua University","ror":"https://ror.org/00zdnkx70","country_code":"TW","type":"education","lineage":["https://openalex.org/I25846049"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Shuo-Fang Jeng","raw_affiliation_strings":["Department of Electrical Engineering, Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan","Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I25846049"]},{"raw_affiliation_string":"Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan#TAB#","institution_ids":["https://openalex.org/I25846049"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113592926","display_name":"Su\u2010Jien Lin","orcid":null},"institutions":[{"id":"https://openalex.org/I25846049","display_name":"National Tsing Hua University","ror":"https://ror.org/00zdnkx70","country_code":"TW","type":"education","lineage":["https://openalex.org/I25846049"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Su-Jien Lin","raw_affiliation_strings":["Department of Electrical Engineering, Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan","Dept. of Mater. Sci & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I25846049"]},{"raw_affiliation_string":"Dept. of Mater. Sci & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan","institution_ids":["https://openalex.org/I25846049"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024800144","display_name":"Po\u2010Wen Chiu","orcid":"https://orcid.org/0000-0003-4909-0310"},"institutions":[{"id":"https://openalex.org/I25846049","display_name":"National Tsing Hua University","ror":"https://ror.org/00zdnkx70","country_code":"TW","type":"education","lineage":["https://openalex.org/I25846049"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Po-Wen Chiu","raw_affiliation_strings":["Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan","Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I25846049"]},{"raw_affiliation_string":"Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan#TAB#","institution_ids":["https://openalex.org/I25846049"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5016468418","display_name":"Jr\u2010Hau He","orcid":"https://orcid.org/0000-0003-1886-9241"},"institutions":[{"id":"https://openalex.org/I16733864","display_name":"National Taiwan University","ror":"https://ror.org/05bqach95","country_code":"TW","type":"education","lineage":["https://openalex.org/I16733864"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Jr-Hau He","raw_affiliation_strings":["Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan","Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan","institution_ids":["https://openalex.org/I16733864"]},{"raw_affiliation_string":"Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan","institution_ids":["https://openalex.org/I16733864"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":6.241,"has_fulltext":false,"cited_by_count":74,"citation_normalized_percentile":{"value":0.96690775,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":94,"max":99},"biblio":{"volume":"101","issue":"7","first_page":"1732","last_page":"1739"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11128","display_name":"Transition Metal Oxide Nanomaterials","score":0.9965000152587891,"subfield":{"id":"https://openalex.org/subfields/2507","display_name":"Polymers and Plastics"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9947999715805054,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/graphene","display_name":"Graphene","score":0.9389207363128662},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6242091655731201},{"id":"https://openalex.org/keywords/passivation","display_name":"Passivation","score":0.6239899396896362},{"id":"https://openalex.org/keywords/resistive-touchscreen","display_name":"Resistive touchscreen","score":0.6037085056304932},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4543924927711487},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.43446433544158936},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3874915838241577},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.357693076133728},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.22848382592201233},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.1841369867324829},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.13272836804389954},{"id":"https://openalex.org/keywords/physical-chemistry","display_name":"Physical chemistry","score":0.07676249742507935}],"concepts":[{"id":"https://openalex.org/C30080830","wikidata":"https://www.wikidata.org/wiki/Q169917","display_name":"Graphene","level":2,"score":0.9389207363128662},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6242091655731201},{"id":"https://openalex.org/C33574316","wikidata":"https://www.wikidata.org/wiki/Q917260","display_name":"Passivation","level":3,"score":0.6239899396896362},{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.6037085056304932},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4543924927711487},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.43446433544158936},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3874915838241577},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.357693076133728},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.22848382592201233},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.1841369867324829},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.13272836804389954},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.07676249742507935},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C31972630","wikidata":"https://www.wikidata.org/wiki/Q844240","display_name":"Computer vision","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jproc.2013.2260112","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jproc.2013.2260112","pdf_url":null,"source":{"id":"https://openalex.org/S68686220","display_name":"Proceedings of the IEEE","issn_l":"0018-9219","issn":["0018-9219","1558-2256"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":40,"referenced_works":["https://openalex.org/W1972521220","https://openalex.org/W1974360696","https://openalex.org/W2009826966","https://openalex.org/W2010191068","https://openalex.org/W2013267075","https://openalex.org/W2015187763","https://openalex.org/W2019126372","https://openalex.org/W2023564981","https://openalex.org/W2040992030","https://openalex.org/W2051105944","https://openalex.org/W2052404669","https://openalex.org/W2053498812","https://openalex.org/W2056046179","https://openalex.org/W2059203269","https://openalex.org/W2065308677","https://openalex.org/W2067802660","https://openalex.org/W2072823822","https://openalex.org/W2074357625","https://openalex.org/W2074684620","https://openalex.org/W2080070105","https://openalex.org/W2084111729","https://openalex.org/W2084124672","https://openalex.org/W2088471061","https://openalex.org/W2093122352","https://openalex.org/W2097773259","https://openalex.org/W2105408739","https://openalex.org/W2115798899","https://openalex.org/W2117223202","https://openalex.org/W2128948481","https://openalex.org/W2132238238","https://openalex.org/W2134951898","https://openalex.org/W2136334331","https://openalex.org/W2145686973","https://openalex.org/W2146233624","https://openalex.org/W2157552934","https://openalex.org/W2165148669","https://openalex.org/W2321494603","https://openalex.org/W2334008498","https://openalex.org/W3102525999","https://openalex.org/W6677560222"],"related_works":["https://openalex.org/W2893117232","https://openalex.org/W2368982584","https://openalex.org/W957405543","https://openalex.org/W2100154643","https://openalex.org/W81629128","https://openalex.org/W2326159057","https://openalex.org/W1965743066","https://openalex.org/W1979157137","https://openalex.org/W2949086270","https://openalex.org/W2059868487"],"abstract_inverted_index":{"A":[0],"ZnO-based":[1],"transparent":[2],"resistance":[3,71],"random":[4],"access":[5],"memory":[6],"(TRRAM)":[7],"employs":[8],"atomic":[9],"layered":[10],"graphene":[11,43,83,117],"exhibiting":[12],"not":[13,126],"only":[14,127],"excellent":[15],"transparency":[16],"(less":[17],"than":[18,95,106],"2%":[19],"absorptance":[20],"by":[21,81],"graphene)":[22],"but":[23,140],"also":[24,141],"reversible":[25],"resistive":[26],"switching":[27,61,137],"characteristics.":[28],"The":[29,70,86,121],"statistical":[30],"analysis":[31],"including":[32],"cycle-to-cycle":[33],"and":[34,63,101,132],"cell-to-cell":[35],"tests":[36],"for":[37,118,128,142],"almost":[38],"100":[39],"cells":[40],"shows":[41],"that":[42],"plays":[44],"a":[45],"significant":[46],"role":[47],"to":[48,55,66],"suppress":[49],"the":[50,56,60,64,67,92,102,113,135],"surface":[51],"effect,":[52],"giving":[53],"rise":[54],"notable":[57],"increase":[58],"in":[59],"yield":[62],"insensitivity":[65],"environmental":[68],"atmosphere.":[69],"variation":[72],"of":[73,76,116,147],"high-resistance":[74],"state":[75],"ZnO":[77],"is":[78],"greatly":[79],"suppressed":[80],"covering":[82],"as":[84,91],"well.":[85],"device":[87,130],"reliability":[88],"investigation,":[89],"such":[90],"endurance":[93],"more":[94],"10":[96,107],"<sup":[97,108],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[98,109],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[99],"cycles":[100],"retention":[103],"time":[104],"longer":[105],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">4</sup>":[110],"s,":[111],"reveals":[112],"robust":[114],"passivation":[115],"TRRAM":[119,129],"applications.":[120],"obtained":[122],"insights":[123],"show":[124],"guidelines":[125],"design":[131],"optimization":[133],"against":[134],"undesired":[136],"parameter":[138],"variations":[139],"developing":[143],"practically":[144],"useful":[145],"applications":[146],"graphene.":[148]},"counts_by_year":[{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":5},{"year":2020,"cited_by_count":8},{"year":2019,"cited_by_count":9},{"year":2018,"cited_by_count":6},{"year":2017,"cited_by_count":6},{"year":2016,"cited_by_count":5},{"year":2015,"cited_by_count":7},{"year":2014,"cited_by_count":12},{"year":2013,"cited_by_count":2}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}