{"id":"https://openalex.org/W2000918063","doi":"https://doi.org/10.1109/jproc.2013.2258651","title":"High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique","display_name":"High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique","publication_year":2013,"publication_date":"2013-05-20","ids":{"openalex":"https://openalex.org/W2000918063","doi":"https://doi.org/10.1109/jproc.2013.2258651","mag":"2000918063"},"language":"en","primary_location":{"id":"doi:10.1109/jproc.2013.2258651","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jproc.2013.2258651","pdf_url":null,"source":{"id":"https://openalex.org/S68686220","display_name":"Proceedings of the IEEE","issn_l":"0018-9219","issn":["0018-9219","1558-2256"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102967975","display_name":"Myung-Ho Jung","orcid":"https://orcid.org/0000-0003-3602-9879"},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Myung-Ho Jung","raw_affiliation_strings":["Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai, Japan","Res. Inst. of Electr. Commun. (RIEC), Tohoku Univ., Sendai, Japan"],"affiliations":[{"raw_affiliation_string":"Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai, Japan","institution_ids":["https://openalex.org/I201537933"]},{"raw_affiliation_string":"Res. Inst. of Electr. Commun. (RIEC), Tohoku Univ., Sendai, Japan","institution_ids":["https://openalex.org/I201537933"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056359341","display_name":"Goon-Ho Park","orcid":null},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Goon-Ho Park","raw_affiliation_strings":["Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai, Japan","Res. Inst. of Electr. Commun. (RIEC), Tohoku Univ., Sendai, Japan"],"affiliations":[{"raw_affiliation_string":"Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai, Japan","institution_ids":["https://openalex.org/I201537933"]},{"raw_affiliation_string":"Res. Inst. of Electr. Commun. (RIEC), Tohoku Univ., Sendai, Japan","institution_ids":["https://openalex.org/I201537933"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048877350","display_name":"Tomohiro Yoshida","orcid":"https://orcid.org/0000-0001-5876-6090"},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tomohiro Yoshida","raw_affiliation_strings":["Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai, Japan","Res. Inst. of Electr. Commun. (RIEC), Tohoku Univ., Sendai, Japan"],"affiliations":[{"raw_affiliation_string":"Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai, Japan","institution_ids":["https://openalex.org/I201537933"]},{"raw_affiliation_string":"Res. Inst. of Electr. Commun. (RIEC), Tohoku Univ., Sendai, Japan","institution_ids":["https://openalex.org/I201537933"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000348806","display_name":"Hirokazu Fukidome","orcid":"https://orcid.org/0000-0002-7101-3867"},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hirokazu Fukidome","raw_affiliation_strings":["Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai, Japan","Res. Inst. of Electr. Commun. (RIEC), Tohoku Univ., Sendai, Japan"],"affiliations":[{"raw_affiliation_string":"Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai, Japan","institution_ids":["https://openalex.org/I201537933"]},{"raw_affiliation_string":"Res. Inst. of Electr. Commun. (RIEC), Tohoku Univ., Sendai, Japan","institution_ids":["https://openalex.org/I201537933"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019098655","display_name":"Tetsuya Suemitsu","orcid":"https://orcid.org/0000-0003-1599-4995"},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tetsuya Suemitsu","raw_affiliation_strings":["Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai, Japan","Res. Inst. of Electr. Commun. (RIEC), Tohoku Univ., Sendai, Japan"],"affiliations":[{"raw_affiliation_string":"Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai, Japan","institution_ids":["https://openalex.org/I201537933"]},{"raw_affiliation_string":"Res. Inst. of Electr. Commun. (RIEC), Tohoku Univ., Sendai, Japan","institution_ids":["https://openalex.org/I201537933"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083105163","display_name":"Taiichi Otsuji","orcid":"https://orcid.org/0000-0002-0887-0479"},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Taiichi Otsuji","raw_affiliation_strings":["Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai, Japan","Res. Inst. of Electr. Commun. (RIEC), Tohoku Univ., Sendai, Japan"],"affiliations":[{"raw_affiliation_string":"Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai, Japan","institution_ids":["https://openalex.org/I201537933"]},{"raw_affiliation_string":"Res. Inst. of Electr. Commun. (RIEC), Tohoku Univ., Sendai, Japan","institution_ids":["https://openalex.org/I201537933"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113632957","display_name":"Maki Suemitsu","orcid":null},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Maki Suemitsu","raw_affiliation_strings":["Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai, Japan","Res. Inst. of Electr. Commun. (RIEC), Tohoku Univ., Sendai, Japan"],"affiliations":[{"raw_affiliation_string":"Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai, Japan","institution_ids":["https://openalex.org/I201537933"]},{"raw_affiliation_string":"Res. Inst. of Electr. Commun. (RIEC), Tohoku Univ., Sendai, Japan","institution_ids":["https://openalex.org/I201537933"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5102967975"],"corresponding_institution_ids":["https://openalex.org/I201537933"],"apc_list":null,"apc_paid":null,"fwci":1.0441,"has_fulltext":false,"cited_by_count":19,"citation_normalized_percentile":{"value":0.74235274,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"101","issue":"7","first_page":"1603","last_page":"1608"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/graphene","display_name":"Graphene","score":0.686682403087616},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.5185406804084778},{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.5145615935325623},{"id":"https://openalex.org/keywords/cutoff","display_name":"Cutoff","score":0.509384036064148},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4909675419330597},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.4082214832305908},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.36336711049079895},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.34625673294067383},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3176182508468628},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.12312540411949158}],"concepts":[{"id":"https://openalex.org/C30080830","wikidata":"https://www.wikidata.org/wiki/Q169917","display_name":"Graphene","level":2,"score":0.686682403087616},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.5185406804084778},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.5145615935325623},{"id":"https://openalex.org/C2778217198","wikidata":"https://www.wikidata.org/wiki/Q556977","display_name":"Cutoff","level":2,"score":0.509384036064148},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4909675419330597},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.4082214832305908},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.36336711049079895},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.34625673294067383},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3176182508468628},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.12312540411949158},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jproc.2013.2258651","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jproc.2013.2258651","pdf_url":null,"source":{"id":"https://openalex.org/S68686220","display_name":"Proceedings of the IEEE","issn_l":"0018-9219","issn":["0018-9219","1558-2256"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320335153","display_name":"Research Institute of Electrical Communication, Tohoku University","ror":"https://ror.org/01dq60k83"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W1927677023","https://openalex.org/W1988951675","https://openalex.org/W2005754988","https://openalex.org/W2007392193","https://openalex.org/W2014694192","https://openalex.org/W2014935324","https://openalex.org/W2053957995","https://openalex.org/W2058872584","https://openalex.org/W2063323737","https://openalex.org/W2065308677","https://openalex.org/W2083334984","https://openalex.org/W2116721103","https://openalex.org/W2137399982","https://openalex.org/W2160387060","https://openalex.org/W2162260728","https://openalex.org/W2164017743","https://openalex.org/W2165190656","https://openalex.org/W2170659050","https://openalex.org/W3100660663","https://openalex.org/W3101954383","https://openalex.org/W4211172053"],"related_works":["https://openalex.org/W2606452130","https://openalex.org/W3149465128","https://openalex.org/W3196929922","https://openalex.org/W2377562106","https://openalex.org/W2081887179","https://openalex.org/W2328592354","https://openalex.org/W2072424359","https://openalex.org/W2061674058","https://openalex.org/W2750055590","https://openalex.org/W1990516236"],"abstract_inverted_index":{"Self-aligned":[0],"source/drain":[1],"(S/D)":[2],"graphene":[3],"field-effect":[4],"transistors":[5],"(GFETs)":[6],"with":[7,77],"extremely":[8],"small":[9],"access":[10],"lengths":[11],"were":[12],"successfully":[13],"fabricated":[14],"using":[15],"a":[16,69,78],"simple":[17],"device":[18],"fabrication":[19],"process":[20],"without":[21],"sidewall":[22],"spacer":[23],"formation.":[24],"The":[25],"self-aligned":[26,97],"S/D":[27],"GFET":[28],"exhibits":[29],"superior":[30],"electrical":[31],"characteristics,":[32],"such":[33],"as":[34],"the":[35,46,61,92],"intrinsic":[36],"carrier":[37],"mobility":[38],"of":[39,50,64,72,95],"6100":[40],"cm":[41],"<sup":[42,52,56],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[43,53,57,85],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[44],"/Vs,":[45],"gate":[47,81],"leakage":[48],"current":[49],"10":[51],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">-10</sup>":[54],"-10":[55],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">-9</sup>":[58],"A":[59],"and":[60],"contact":[62],"resistance":[63],"412":[65],"\u03a9\u03bcm.":[66],"In":[67],"particular,":[68],"cutoff":[70],"frequency":[71],"13":[73],"GHz":[74],"was":[75],"achieved":[76],"rather":[79],"large":[80],"length":[82],"(":[83],"<i":[84],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">LG</i>":[86],"=":[87],"3":[88],"\u03bcm),":[89],"which":[90],"demonstrates":[91],"promising":[93],"future":[94],"this":[96],"GFET.":[98]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2021,"cited_by_count":3},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":4},{"year":2016,"cited_by_count":4},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}