{"id":"https://openalex.org/W1998604163","doi":"https://doi.org/10.1109/jproc.2010.2048160","title":"Challenges and Opportunities in GaN and ZnO Devices and Materials [Scanning the Issue]","display_name":"Challenges and Opportunities in GaN and ZnO Devices and Materials [Scanning the Issue]","publication_year":2010,"publication_date":"2010-06-23","ids":{"openalex":"https://openalex.org/W1998604163","doi":"https://doi.org/10.1109/jproc.2010.2048160","mag":"1998604163"},"language":"en","primary_location":{"id":"doi:10.1109/jproc.2010.2048160","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jproc.2010.2048160","pdf_url":null,"source":{"id":"https://openalex.org/S68686220","display_name":"Proceedings of the IEEE","issn_l":"0018-9219","issn":["0018-9219","1558-2256"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5078375525","display_name":"H. Morko\u00e7","orcid":null},"institutions":[{"id":"https://openalex.org/I158012942","display_name":"University of Richmond","ror":"https://ror.org/03y71xh61","country_code":"US","type":"education","lineage":["https://openalex.org/I158012942"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Hadis Morkoc","raw_affiliation_strings":["Richmond"],"affiliations":[{"raw_affiliation_string":"Richmond","institution_ids":["https://openalex.org/I158012942"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077671019","display_name":"Jen\u2010Inn Chyi","orcid":"https://orcid.org/0000-0001-8149-832X"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Jen-Inn Chyi","raw_affiliation_strings":["\u96fb\u6a5f\u5de5\u7a0b\u5b78\u7cfb"],"affiliations":[{"raw_affiliation_string":"\u96fb\u6a5f\u5de5\u7a0b\u5b78\u7cfb","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021591092","display_name":"A. Krost","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Alois Krost","raw_affiliation_strings":[],"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108220709","display_name":"Yasushi Nanishi","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yasushi Nanishi","raw_affiliation_strings":[],"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5069481744","display_name":"D. J. Silversmith","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Donald J. Silversmith","raw_affiliation_strings":[],"affiliations":[]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5078375525"],"corresponding_institution_ids":["https://openalex.org/I158012942"],"apc_list":null,"apc_paid":null,"fwci":0.2656,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.51111861,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"98","issue":"7","first_page":"1113","last_page":"1117"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.6365000009536743,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.6365000009536743,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.6352999806404114,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5751450657844543},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.46235546469688416},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.38662615418434143},{"id":"https://openalex.org/keywords/business","display_name":"Business","score":0.38047948479652405},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3628558814525604},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2643268406391144}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5751450657844543},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.46235546469688416},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.38662615418434143},{"id":"https://openalex.org/C144133560","wikidata":"https://www.wikidata.org/wiki/Q4830453","display_name":"Business","level":0,"score":0.38047948479652405},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3628558814525604},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2643268406391144}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jproc.2010.2048160","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jproc.2010.2048160","pdf_url":null,"source":{"id":"https://openalex.org/S68686220","display_name":"Proceedings of the IEEE","issn_l":"0018-9219","issn":["0018-9219","1558-2256"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W4246450666","https://openalex.org/W4388998267","https://openalex.org/W2898370298","https://openalex.org/W4390401159","https://openalex.org/W2744391499","https://openalex.org/W3120461830","https://openalex.org/W4230250635","https://openalex.org/W3041790586","https://openalex.org/W2018879842","https://openalex.org/W3144504424"],"abstract_inverted_index":{"This":[0],"special":[1,34],"issue":[2],"addresses":[3],"to":[4,21],"a":[5],"large":[6],"extent":[7],"the":[8,23],"challenges":[9],"and":[10,14,17,25],"opportunities":[11],"in":[12,32],"GaN":[13],"ZnO":[15],"devices":[16],"materials":[18],"deemed":[19],"critical":[20],"both":[22],"GaN-":[24],"ZnO-based":[26],"technologies.":[27],"There":[28],"are":[29],"twenty":[30],"articles":[31],"this":[33],"issue.":[35]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2018,"cited_by_count":2},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}