{"id":"https://openalex.org/W2144084820","doi":"https://doi.org/10.1109/jproc.2010.2044967","title":"Growth of Bulk GaN and AlN: Progress and Challenges","display_name":"Growth of Bulk GaN and AlN: Progress and Challenges","publication_year":2010,"publication_date":"2010-05-28","ids":{"openalex":"https://openalex.org/W2144084820","doi":"https://doi.org/10.1109/jproc.2010.2044967","mag":"2144084820"},"language":"en","primary_location":{"id":"doi:10.1109/jproc.2010.2044967","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jproc.2010.2044967","pdf_url":null,"source":{"id":"https://openalex.org/S68686220","display_name":"Proceedings of the IEEE","issn_l":"0018-9219","issn":["0018-9219","1558-2256"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5008564647","display_name":"V. Avrutin","orcid":"https://orcid.org/0000-0002-3682-5384"},"institutions":[{"id":"https://openalex.org/I184840846","display_name":"Virginia Commonwealth University","ror":"https://ror.org/02nkdxk79","country_code":"US","type":"education","lineage":["https://openalex.org/I184840846"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Vitaliy Avrutin","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA, USA","institution_ids":["https://openalex.org/I184840846"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069481744","display_name":"D. J. Silversmith","orcid":null},"institutions":[{"id":"https://openalex.org/I4210099573","display_name":"United States Air Force Office of Scientific Research","ror":"https://ror.org/011e9bt93","country_code":"US","type":"government","lineage":["https://openalex.org/I1280414376","https://openalex.org/I1330347796","https://openalex.org/I4210099573","https://openalex.org/I4210102105","https://openalex.org/I4389425425"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Donald J Silversmith","raw_affiliation_strings":["Air Force Office of Scientific Research, Arlington, VA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Air Force Office of Scientific Research, Arlington, VA, USA","institution_ids":["https://openalex.org/I4210099573"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015586043","display_name":"Yusuke Mori","orcid":"https://orcid.org/0000-0003-2952-7458"},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yusuke Mori","raw_affiliation_strings":["Graduate School of Electrical Engineering, Osaka University, Suita, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate School of Electrical Engineering, Osaka University, Suita, Japan","institution_ids":["https://openalex.org/I98285908"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020286629","display_name":"Fumio Kawamura","orcid":"https://orcid.org/0000-0003-0724-1475"},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"F Kawamura","raw_affiliation_strings":["Graduate School of Electrical Engineering, Osaka University, Suita, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate School of Electrical Engineering, Osaka University, Suita, Japan","institution_ids":["https://openalex.org/I98285908"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5106182473","display_name":"Yasuo Kitaoka","orcid":null},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y Kitaoka","raw_affiliation_strings":["Graduate School of Electrical Engineering, Osaka University, Suita, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate School of Electrical Engineering, Osaka University, Suita, Japan","institution_ids":["https://openalex.org/I98285908"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5065838439","display_name":"H. Morko\u00e7\u030c","orcid":"https://orcid.org/0000-0003-4446-4918"},"institutions":[{"id":"https://openalex.org/I184840846","display_name":"Virginia Commonwealth University","ror":"https://ror.org/02nkdxk79","country_code":"US","type":"education","lineage":["https://openalex.org/I184840846"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Hadis Morkoc","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA, USA","institution_ids":["https://openalex.org/I184840846"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":3.8079,"has_fulltext":false,"cited_by_count":79,"citation_normalized_percentile":{"value":0.94110787,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":94,"max":99},"biblio":{"volume":"98","issue":"7","first_page":"1302","last_page":"1315"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.9959999918937683,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9955000281333923,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7518999576568604},{"id":"https://openalex.org/keywords/light-emitting-diode","display_name":"Light-emitting diode","score":0.7394203543663025},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7332448363304138},{"id":"https://openalex.org/keywords/sapphire","display_name":"Sapphire","score":0.6395989060401917},{"id":"https://openalex.org/keywords/epitaxy","display_name":"Epitaxy","score":0.5426005721092224},{"id":"https://openalex.org/keywords/heterojunction","display_name":"Heterojunction","score":0.5413543581962585},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.528069019317627},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.47831061482429504},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.4493020176887512},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.4490981698036194},{"id":"https://openalex.org/keywords/solid-state-lighting","display_name":"Solid-state lighting","score":0.44774913787841797},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.44230031967163086},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.4320322871208191},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.27654629945755005},{"id":"https://openalex.org/keywords/laser","display_name":"Laser","score":0.2707042098045349},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.22859665751457214},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.13771140575408936},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.09034568071365356}],"concepts":[{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7518999576568604},{"id":"https://openalex.org/C176666156","wikidata":"https://www.wikidata.org/wiki/Q25504","display_name":"Light-emitting diode","level":2,"score":0.7394203543663025},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7332448363304138},{"id":"https://openalex.org/C2780064504","wikidata":"https://www.wikidata.org/wiki/Q127583","display_name":"Sapphire","level":3,"score":0.6395989060401917},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.5426005721092224},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.5413543581962585},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.528069019317627},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.47831061482429504},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.4493020176887512},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.4490981698036194},{"id":"https://openalex.org/C61082081","wikidata":"https://www.wikidata.org/wiki/Q1370570","display_name":"Solid-state lighting","level":3,"score":0.44774913787841797},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.44230031967163086},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.4320322871208191},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.27654629945755005},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.2707042098045349},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.22859665751457214},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.13771140575408936},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.09034568071365356},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jproc.2010.2044967","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jproc.2010.2044967","pdf_url":null,"source":{"id":"https://openalex.org/S68686220","display_name":"Proceedings of the IEEE","issn_l":"0018-9219","issn":["0018-9219","1558-2256"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":69,"referenced_works":["https://openalex.org/W1441877551","https://openalex.org/W1964743486","https://openalex.org/W1965323652","https://openalex.org/W1967341886","https://openalex.org/W1967546627","https://openalex.org/W1967797505","https://openalex.org/W1968010468","https://openalex.org/W1968674224","https://openalex.org/W1969154300","https://openalex.org/W1974072513","https://openalex.org/W1974481460","https://openalex.org/W1974740442","https://openalex.org/W1979549538","https://openalex.org/W1979577598","https://openalex.org/W1981397067","https://openalex.org/W1984623584","https://openalex.org/W1984920158","https://openalex.org/W1986663738","https://openalex.org/W1989150796","https://openalex.org/W1992194180","https://openalex.org/W1994451518","https://openalex.org/W1995056900","https://openalex.org/W1997009996","https://openalex.org/W1997188144","https://openalex.org/W2004576584","https://openalex.org/W2006039694","https://openalex.org/W2007340257","https://openalex.org/W2007721240","https://openalex.org/W2009035285","https://openalex.org/W2009222243","https://openalex.org/W2011488820","https://openalex.org/W2012431776","https://openalex.org/W2015215277","https://openalex.org/W2015480166","https://openalex.org/W2017101577","https://openalex.org/W2022481113","https://openalex.org/W2026278391","https://openalex.org/W2027419468","https://openalex.org/W2029057420","https://openalex.org/W2036798845","https://openalex.org/W2039689329","https://openalex.org/W2040298651","https://openalex.org/W2048087015","https://openalex.org/W2054100590","https://openalex.org/W2054621303","https://openalex.org/W2057237194","https://openalex.org/W2057835810","https://openalex.org/W2062681007","https://openalex.org/W2065202438","https://openalex.org/W2068171426","https://openalex.org/W2068321062","https://openalex.org/W2072811736","https://openalex.org/W2072817272","https://openalex.org/W2073589117","https://openalex.org/W2075298471","https://openalex.org/W2075999622","https://openalex.org/W2078121782","https://openalex.org/W2081189274","https://openalex.org/W2082720504","https://openalex.org/W2082741377","https://openalex.org/W2083136845","https://openalex.org/W2090920617","https://openalex.org/W2093087494","https://openalex.org/W2125020269","https://openalex.org/W2150105757","https://openalex.org/W2162282095","https://openalex.org/W2939868658","https://openalex.org/W3148617275","https://openalex.org/W4245420099"],"related_works":["https://openalex.org/W1790618316","https://openalex.org/W2472160638","https://openalex.org/W3209950509","https://openalex.org/W2559825181","https://openalex.org/W1975307200","https://openalex.org/W4377089489","https://openalex.org/W3088454288","https://openalex.org/W1972712827","https://openalex.org/W2466508933","https://openalex.org/W4313611767"],"abstract_inverted_index":{"GaN-based":[0],"optoelectronic":[1],"and":[2,11,27,31,66,134,138,169],"electronic":[3,84],"devices":[4],"such":[5,23,127],"as":[6,24,102,128,153],"light-emitting":[7],"diodes":[8],"(LEDs),":[9],"laser,":[10],"heterojunction":[12],"field-effect":[13],"transistors":[14],"(HFETs)":[15],"typically":[16],"use":[17],"material":[18,97],"grown":[19],"on":[20,46],"foreign":[21],"substrates":[22,114],"sapphire,":[25],"Si,":[26],"SiC.":[28],"However,":[29],"thermal":[30],"lattice":[32],"mismatch":[33],"present":[34],"prevent":[35],"attainment":[36],"of":[37],"quality":[38],"films":[39],"deemed":[40],"necessary":[41],"by":[42],"ever":[43],"increasing":[44],"demand":[45],"device":[47,85],"performance.":[48],"In":[49,122],"fact":[50],"in":[51,162],"LEDs":[52],"intended":[53],"for":[54,107,118],"solid":[55],"state":[56],"lighting,":[57],"internal":[58],"quantum":[59],"efficiencies":[60,70],"near":[61],"100%":[62],"might":[63],"be":[64,74,116],"needed,":[65],"further":[67],"these":[68],"high":[69,78,87],"would":[71],"have":[72],"to":[73,98,149,159],"retained":[75],"at":[76],"very":[77],"injection":[79],"current":[80],"levels.":[81],"On":[82],"the":[83,96,105,119,143],"side,":[86],"radio-frequency":[88],"(RF)":[89],"power,":[90],"particularly":[91],"high-power":[92],"switching":[93],"devices,":[94],"push":[95],"its":[99],"limits.":[100],"Consequently,":[101],"has":[103],"been":[104],"case":[106],"other":[108],"successful":[109],"semiconductor":[110],"materials":[111],"systems,":[112],"native":[113],"must":[115],"developed":[117],"GaN":[120],"family.":[121],"this":[123,160,163],"paper,":[124],"various":[125],"approaches":[126],"high-pressure":[129],"nitrogen":[130],"solution":[131],"(HPNS),":[132],"ammonothermal,":[133],"Na":[135],"flux":[136],"methods,":[137],"an":[139],"intermediary":[140],"technique":[141,161],"called":[142],"hydride":[144],"vapor":[145],"phase":[146],"epitaxy":[147],"(HVPE;":[148],"a":[150,156],"lesser":[151],"extent":[152],"there":[154],"is":[155],"review":[157],"devoted":[158],"issue)":[164],"along":[165],"with":[166],"their":[167],"strengths":[168],"challenges":[170],"are":[171],"discussed.":[172]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":11},{"year":2024,"cited_by_count":6},{"year":2023,"cited_by_count":6},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":6},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":5},{"year":2018,"cited_by_count":5},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":4},{"year":2014,"cited_by_count":7},{"year":2013,"cited_by_count":5},{"year":2012,"cited_by_count":3}],"updated_date":"2026-07-29T09:40:50.615796","created_date":"2025-10-10T00:00:00"}