{"id":"https://openalex.org/W1971966678","doi":"https://doi.org/10.1109/jproc.2008.2007463","title":"High-Density Through Silicon Vias for 3-D LSIs","display_name":"High-Density Through Silicon Vias for 3-D LSIs","publication_year":2009,"publication_date":"2009-01-01","ids":{"openalex":"https://openalex.org/W1971966678","doi":"https://doi.org/10.1109/jproc.2008.2007463","mag":"1971966678"},"language":"en","primary_location":{"id":"doi:10.1109/jproc.2008.2007463","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jproc.2008.2007463","pdf_url":null,"source":{"id":"https://openalex.org/S68686220","display_name":"Proceedings of the IEEE","issn_l":"0018-9219","issn":["0018-9219","1558-2256"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5059487693","display_name":"Mitsumasa Koyanagi","orcid":"https://orcid.org/0000-0003-4726-4217"},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Mitsumasa Koyanagi","raw_affiliation_strings":["Department of Bioengineering and Robotics, University of Tohoku, Sendai, Japan","Dept. of Bioeng. & Robot., Tohoku Univ., Sendai"],"affiliations":[{"raw_affiliation_string":"Department of Bioengineering and Robotics, University of Tohoku, Sendai, Japan","institution_ids":[]},{"raw_affiliation_string":"Dept. of Bioeng. & Robot., Tohoku Univ., Sendai","institution_ids":["https://openalex.org/I201537933"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041535044","display_name":"Takafumi Fukushima","orcid":"https://orcid.org/0000-0003-2303-8178"},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takafumi Fukushima","raw_affiliation_strings":["Department of Bioengineering and Robotics, University of Tohoku, Sendai, Japan","Dept. of Bioeng. & Robot., Tohoku Univ., Sendai"],"affiliations":[{"raw_affiliation_string":"Department of Bioengineering and Robotics, University of Tohoku, Sendai, Japan","institution_ids":[]},{"raw_affiliation_string":"Dept. of Bioeng. & Robot., Tohoku Univ., Sendai","institution_ids":["https://openalex.org/I201537933"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5006295728","display_name":"Tetsu Tanaka","orcid":"https://orcid.org/0000-0001-7414-315X"},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tetsu Tanaka","raw_affiliation_strings":["Department of Bioengineering and Robotics, University of Tohoku, Sendai, Japan","Dept. of Bioeng. & Robot., Tohoku Univ., Sendai"],"affiliations":[{"raw_affiliation_string":"Department of Bioengineering and Robotics, University of Tohoku, Sendai, Japan","institution_ids":[]},{"raw_affiliation_string":"Dept. of Bioeng. & Robot., Tohoku Univ., Sendai","institution_ids":["https://openalex.org/I201537933"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5059487693"],"corresponding_institution_ids":["https://openalex.org/I201537933"],"apc_list":null,"apc_paid":null,"fwci":31.1039,"has_fulltext":false,"cited_by_count":295,"citation_normalized_percentile":{"value":0.99839658,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":98,"max":100},"biblio":{"volume":"97","issue":"1","first_page":"49","last_page":"59"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.998199999332428,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7879946231842041},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.6765789985656738},{"id":"https://openalex.org/keywords/trench","display_name":"Trench","score":0.6712658405303955},{"id":"https://openalex.org/keywords/tungsten","display_name":"Tungsten","score":0.6030993461608887},{"id":"https://openalex.org/keywords/polycrystalline-silicon","display_name":"Polycrystalline silicon","score":0.5960130095481873},{"id":"https://openalex.org/keywords/substrate","display_name":"Substrate (aquarium)","score":0.5906007289886475},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.5754726529121399},{"id":"https://openalex.org/keywords/chemical-vapor-deposition","display_name":"Chemical vapor deposition","score":0.5613994002342224},{"id":"https://openalex.org/keywords/deposition","display_name":"Deposition (geology)","score":0.542319118976593},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5232966542243958},{"id":"https://openalex.org/keywords/through-silicon-via","display_name":"Through-silicon via","score":0.44864118099212646},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3291547894477844},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.15584751963615417},{"id":"https://openalex.org/keywords/thin-film-transistor","display_name":"Thin-film transistor","score":0.0498141348361969}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7879946231842041},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6765789985656738},{"id":"https://openalex.org/C155310634","wikidata":"https://www.wikidata.org/wiki/Q1852785","display_name":"Trench","level":3,"score":0.6712658405303955},{"id":"https://openalex.org/C542268612","wikidata":"https://www.wikidata.org/wiki/Q743","display_name":"Tungsten","level":2,"score":0.6030993461608887},{"id":"https://openalex.org/C2780565262","wikidata":"https://www.wikidata.org/wiki/Q737038","display_name":"Polycrystalline silicon","level":4,"score":0.5960130095481873},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5906007289886475},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.5754726529121399},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.5613994002342224},{"id":"https://openalex.org/C64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","level":3,"score":0.542319118976593},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5232966542243958},{"id":"https://openalex.org/C45632049","wikidata":"https://www.wikidata.org/wiki/Q1578120","display_name":"Through-silicon via","level":3,"score":0.44864118099212646},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3291547894477844},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.15584751963615417},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.0498141348361969},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C2816523","wikidata":"https://www.wikidata.org/wiki/Q180184","display_name":"Sediment","level":2,"score":0.0},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jproc.2008.2007463","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jproc.2008.2007463","pdf_url":null,"source":{"id":"https://openalex.org/S68686220","display_name":"Proceedings of the IEEE","issn_l":"0018-9219","issn":["0018-9219","1558-2256"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":38,"referenced_works":["https://openalex.org/W582694503","https://openalex.org/W628521540","https://openalex.org/W1494602065","https://openalex.org/W1513192856","https://openalex.org/W1513426357","https://openalex.org/W1597870544","https://openalex.org/W1605711829","https://openalex.org/W1970831471","https://openalex.org/W2003157710","https://openalex.org/W2007275731","https://openalex.org/W2009195513","https://openalex.org/W2031579205","https://openalex.org/W2033940324","https://openalex.org/W2078135655","https://openalex.org/W2092077578","https://openalex.org/W2096042906","https://openalex.org/W2104314803","https://openalex.org/W2120149280","https://openalex.org/W2129810540","https://openalex.org/W2145135695","https://openalex.org/W2151613126","https://openalex.org/W2153220236","https://openalex.org/W2461897579","https://openalex.org/W2463666599","https://openalex.org/W2468971469","https://openalex.org/W2537189011","https://openalex.org/W2538857334","https://openalex.org/W2541409995","https://openalex.org/W3139017262","https://openalex.org/W3144169286","https://openalex.org/W6617047191","https://openalex.org/W6619842640","https://openalex.org/W6629777394","https://openalex.org/W6630649143","https://openalex.org/W6630878328","https://openalex.org/W6635752751","https://openalex.org/W6719784441","https://openalex.org/W6791812362"],"related_works":["https://openalex.org/W2019611465","https://openalex.org/W3164615570","https://openalex.org/W3157611879","https://openalex.org/W2313980841","https://openalex.org/W1995567374","https://openalex.org/W1987893528","https://openalex.org/W2737838463","https://openalex.org/W2086753183","https://openalex.org/W2999649267","https://openalex.org/W2004254973"],"abstract_inverted_index":{"High":[0],"density":[1],"through":[2],"silicon":[3,20],"via":[4],"(TSV)":[5],"is":[6],"a":[7,57,95],"key":[8],"in":[9,56],"fabricating":[10],"three-dimensional":[11],"(3-D)":[12],"large-scale":[13],"integration":[14],"(LSI).":[15],"We":[16],"have":[17],"developed":[18],"polycrystalline":[19],"(poly-Si)":[21],"TSV":[22,27,35,72],"technology":[23,28],"and":[24,52,114],"tungsten":[25,74],"(W)/poly-Si":[26],"for":[29,98],"3-D":[30,102,106,110,115],"integration.":[31],"In":[32,69],"the":[33,50,61,70,78,87],"poly-Si":[34,41,88,91,124],"formation,":[36,73],"low-pressure":[37],"chemical":[38],"vapor":[39],"deposition":[40,84],"heavily":[42],"doped":[43],"with":[44],"phosphorus":[45],"was":[46,66,75,92],"conformally":[47],"deposited":[48,76],"into":[49,77],"narrow":[51],"deep":[53],"trench":[54,65,80],"formed":[55],"Si":[58,64,79],"substrate":[59],"after":[60,86],"surface":[62],"of":[63],"thermally":[67],"oxidized.":[68],"W/poly-Si":[71],"by":[81,122],"atomic":[82],"layer":[83,97],"method":[85],"deposition,":[89],"where":[90],"used":[93],"as":[94],"liner":[96],"W":[99],"deposition.":[100],"The":[101],"microprocessor":[103],"test":[104,108],"chip,":[105,109,113],"memory":[107],"image":[111],"sensor":[112],"artificial":[116],"retina":[117],"chip":[118],"were":[119],"successfully":[120],"fabricated":[121],"using":[123],"TSV.":[125]},"counts_by_year":[{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":9},{"year":2023,"cited_by_count":9},{"year":2022,"cited_by_count":9},{"year":2021,"cited_by_count":7},{"year":2020,"cited_by_count":11},{"year":2019,"cited_by_count":17},{"year":2018,"cited_by_count":17},{"year":2017,"cited_by_count":13},{"year":2016,"cited_by_count":18},{"year":2015,"cited_by_count":25},{"year":2014,"cited_by_count":19},{"year":2013,"cited_by_count":31},{"year":2012,"cited_by_count":35}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}