{"id":"https://openalex.org/W2110395205","doi":"https://doi.org/10.1109/jproc.2003.811702","title":"Introduction to flash memory","display_name":"Introduction to flash memory","publication_year":2003,"publication_date":"2003-04-01","ids":{"openalex":"https://openalex.org/W2110395205","doi":"https://doi.org/10.1109/jproc.2003.811702","mag":"2110395205"},"language":"en","primary_location":{"id":"doi:10.1109/jproc.2003.811702","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jproc.2003.811702","pdf_url":null,"source":{"id":"https://openalex.org/S68686220","display_name":"Proceedings of the IEEE","issn_l":"0018-9219","issn":["0018-9219","1558-2256"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5111947979","display_name":"R. Bez","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":true,"raw_author_name":"R. Bez","raw_affiliation_strings":["Central Research and Development Department, Non-Volatile Memory Process Development, STMicroelectronics, Agrate-Brianza, Italy","Central Res. & Dev. Dept., STMicroclectronics, Agrate Brianza, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Central Research and Development Department, Non-Volatile Memory Process Development, STMicroelectronics, Agrate-Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]},{"raw_affiliation_string":"Central Res. & Dev. Dept., STMicroclectronics, Agrate Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007963406","display_name":"E. Camerlenghi","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"E. Camerlenghi","raw_affiliation_strings":["Central Research and Development Department, Non-Volatile Memory Process Development, STMicroelectronics, Agrate-Brianza, Italy","Central Res. & Dev. Dept., STMicroclectronics, Agrate Brianza, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Central Research and Development Department, Non-Volatile Memory Process Development, STMicroelectronics, Agrate-Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]},{"raw_affiliation_string":"Central Res. & Dev. Dept., STMicroclectronics, Agrate Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034608772","display_name":"Alberto Modelli","orcid":"https://orcid.org/0000-0002-7474-6329"},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"A. Modelli","raw_affiliation_strings":["Central Research and Development Department, Non-Volatile Memory Process Development, STMicroelectronics, Agrate-Brianza, Italy","Central Res. & Dev. Dept., STMicroclectronics, Agrate Brianza, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Central Research and Development Department, Non-Volatile Memory Process Development, STMicroelectronics, Agrate-Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]},{"raw_affiliation_string":"Central Res. & Dev. Dept., STMicroclectronics, Agrate Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5005256235","display_name":"A. Visconti","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"A. Visconti","raw_affiliation_strings":["Central Research and Development Department, Non-Volatile Memory Process Development, STMicroelectronics, Agrate-Brianza, Italy","Central Res. & Dev. Dept., STMicroclectronics, Agrate Brianza, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Central Research and Development Department, Non-Volatile Memory Process Development, STMicroelectronics, Agrate-Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]},{"raw_affiliation_string":"Central Res. & Dev. Dept., STMicroclectronics, Agrate Brianza, Italy","institution_ids":["https://openalex.org/I4210154781"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5111947979"],"corresponding_institution_ids":["https://openalex.org/I4210154781"],"apc_list":null,"apc_paid":null,"fwci":18.7717,"has_fulltext":false,"cited_by_count":820,"citation_normalized_percentile":{"value":0.99588097,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":99,"max":100},"biblio":{"volume":"91","issue":"4","first_page":"489","last_page":"502"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nand-gate","display_name":"NAND gate","score":0.6301485300064087},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.6101762652397156},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5953356027603149},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.576896071434021},{"id":"https://openalex.org/keywords/flash","display_name":"Flash (photography)","score":0.5398686528205872},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5269083380699158},{"id":"https://openalex.org/keywords/flash-memory","display_name":"Flash memory","score":0.5118367075920105},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.5014815330505371},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.44610539078712463},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.353391170501709},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3398473262786865},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.29154905676841736},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.2881696820259094},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.2805391848087311},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.23535612225532532},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21380886435508728},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.17239788174629211},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1662912368774414}],"concepts":[{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.6301485300064087},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.6101762652397156},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5953356027603149},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.576896071434021},{"id":"https://openalex.org/C2777526259","wikidata":"https://www.wikidata.org/wiki/Q221836","display_name":"Flash (photography)","level":2,"score":0.5398686528205872},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5269083380699158},{"id":"https://openalex.org/C2776531357","wikidata":"https://www.wikidata.org/wiki/Q174077","display_name":"Flash memory","level":2,"score":0.5118367075920105},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.5014815330505371},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.44610539078712463},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.353391170501709},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3398473262786865},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.29154905676841736},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.2881696820259094},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2805391848087311},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.23535612225532532},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21380886435508728},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.17239788174629211},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1662912368774414},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109/jproc.2003.811702","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jproc.2003.811702","pdf_url":null,"source":{"id":"https://openalex.org/S68686220","display_name":"Proceedings of the IEEE","issn_l":"0018-9219","issn":["0018-9219","1558-2256"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE","raw_type":"journal-article"},{"id":"pmh:oai:CiteSeerX.psu:10.1.1.313.5309","is_oa":false,"landing_page_url":"http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.313.5309","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"http://staff.ustc.edu.cn/~jpq/paper/flash/2003 Introduction to Flash Memory.pdf","raw_type":"text"},{"id":"pmh:oai:CiteSeerX.psu:10.1.1.464.7114","is_oa":false,"landing_page_url":"http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.464.7114","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"http://www.cense.iisc.ernet.in/academics/Binder-Nonvolatile1.pdf","raw_type":"text"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":58,"referenced_works":["https://openalex.org/W84186442","https://openalex.org/W109587126","https://openalex.org/W627176400","https://openalex.org/W1512475422","https://openalex.org/W1516343489","https://openalex.org/W1567707272","https://openalex.org/W1876140255","https://openalex.org/W1978986026","https://openalex.org/W1981832691","https://openalex.org/W2018597673","https://openalex.org/W2019576482","https://openalex.org/W2039731480","https://openalex.org/W2041057971","https://openalex.org/W2043489859","https://openalex.org/W2056154661","https://openalex.org/W2063381451","https://openalex.org/W2071630674","https://openalex.org/W2071904073","https://openalex.org/W2091024283","https://openalex.org/W2095491076","https://openalex.org/W2098796122","https://openalex.org/W2108379488","https://openalex.org/W2110561444","https://openalex.org/W2111865441","https://openalex.org/W2120431517","https://openalex.org/W2120697522","https://openalex.org/W2121696242","https://openalex.org/W2132815540","https://openalex.org/W2146329966","https://openalex.org/W2147541863","https://openalex.org/W2149359255","https://openalex.org/W2149448983","https://openalex.org/W2151654658","https://openalex.org/W2152786846","https://openalex.org/W2156769540","https://openalex.org/W2158374913","https://openalex.org/W2159754341","https://openalex.org/W2161587444","https://openalex.org/W2163917388","https://openalex.org/W2179150307","https://openalex.org/W2273405401","https://openalex.org/W2525661408","https://openalex.org/W2535010479","https://openalex.org/W2535241832","https://openalex.org/W2536961612","https://openalex.org/W2537621164","https://openalex.org/W2538718975","https://openalex.org/W2539867543","https://openalex.org/W2540449061","https://openalex.org/W2541497582","https://openalex.org/W2542429542","https://openalex.org/W2543421659","https://openalex.org/W2788130238","https://openalex.org/W2984635781","https://openalex.org/W4234056862","https://openalex.org/W4249749923","https://openalex.org/W6604441938","https://openalex.org/W6662999969"],"related_works":["https://openalex.org/W2054139911","https://openalex.org/W1577524679","https://openalex.org/W2386432552","https://openalex.org/W4230869547","https://openalex.org/W2355887979","https://openalex.org/W2116397085","https://openalex.org/W4285309357","https://openalex.org/W2489439822","https://openalex.org/W4237143391","https://openalex.org/W2017101954"],"abstract_inverted_index":{"This":[0],"paper":[1],"mainly":[2],"focuses":[3],"on":[4,92],"the":[5,8,14,19,23,30,72,85,93,104,113,120,123,134,139,142,147,152,166,189,202,214,225,229],"development":[6,194],"of":[7,16,22,71,78,96,122,133,213],"NOR":[9,37,157],"flash":[10,158],"memory":[11,24,135],"technology,":[12],"with":[13,68],"aim":[15],"describing":[17],"both":[18],"basic":[20,73],"functionality":[21],"cell":[25,32,38,159,170,222],"used":[26],"so":[27],"far":[28],"and":[29,50,63,150,179,195,208,241],"main":[31,56,167],"architecture":[33],"consolidated":[34,196],"today.":[35],"The":[36,55],"is":[39,90,116,198,228,237],"basically":[40],"a":[41],"floating-gate":[42,97],"MOS":[43,98],"transistor,":[44],"programmed":[45],"by":[46,52,239],"channel":[47],"hot":[48],"electron":[49],"erased":[51],"Fowler-Nordheim":[53],"tunneling.":[54],"reliability":[57],"issues,":[58],"such":[59],"as":[60,234],"charge":[61],"retention":[62],"endurance,":[64],"are":[65,81,110,162],"discussed,":[66],"together":[67],"an":[69,101,131],"understanding":[70],"physical":[74],"mechanisms":[75],"responsible.":[76],"Most":[77],"these":[79],"considerations":[80],"also":[82],"valid":[83],"for":[84],"NAND":[86],"cell,":[87,115],"since":[88],"it":[89],"based":[91],"same":[94,114,143],"concept":[95],"transistor.":[99],"Furthermore,":[100],"insight":[102],"into":[103],"multilevel":[105,124],"approach,":[106],"where":[107],"two":[108],"bits":[109],"stored":[111],"in":[112],"presented.":[117],"In":[118],"fact,":[119],"exploitation":[121],"approach":[125],"at":[126,141],"each":[127],"technology":[128,191,210],"node":[129,227],"allows":[130],"increase":[132],"efficiency,":[136],"almost":[137],"doubling":[138],"density":[140],"chip":[144],"size,":[145],"enlarging":[146],"application":[148],"range":[149],"reducing":[151],"cost":[153],"per":[154],"bit.":[155],"Finally,":[156],"scaling":[160,171,203,223],"issues":[161,216],"covered,":[163],"pointing":[164],"out":[165],"challenges.":[168],"Flash":[169],"has":[172],"been":[173],"demonstrated":[174],"to":[175,180,183,188,200,206,217,220],"be":[176,181,218],"really":[177],"possible":[178],"able":[182],"follow":[184],"Moore's":[185],"law":[186],"down":[187,205],"130-nm":[190],"generations.":[192],"Technology":[193],"know-how":[197],"expected":[199],"sustain":[201],"trend":[204],"90-":[207],"65-nm":[209,226],"nodes.":[211],"One":[212],"crucial":[215],"solved":[219],"allow":[221],"below":[224],"tunnel":[230,235],"oxide":[231],"thickness":[232],"reduction,":[233],"thinning":[236],"limited":[238],"intrinsic":[240],"extrinsic":[242],"mechanisms.":[243]},"counts_by_year":[{"year":2026,"cited_by_count":15},{"year":2025,"cited_by_count":23},{"year":2024,"cited_by_count":28},{"year":2023,"cited_by_count":49},{"year":2022,"cited_by_count":39},{"year":2021,"cited_by_count":53},{"year":2020,"cited_by_count":41},{"year":2019,"cited_by_count":42},{"year":2018,"cited_by_count":31},{"year":2017,"cited_by_count":46},{"year":2016,"cited_by_count":48},{"year":2015,"cited_by_count":42},{"year":2014,"cited_by_count":55},{"year":2013,"cited_by_count":42},{"year":2012,"cited_by_count":39}],"updated_date":"2026-05-08T15:41:06.802602","created_date":"2025-10-10T00:00:00"}