{"id":"https://openalex.org/W2083604828","doi":"https://doi.org/10.1109/jetcas.2012.2187401","title":"Probabilistically Programmed STT-MRAM","display_name":"Probabilistically Programmed STT-MRAM","publication_year":2012,"publication_date":"2012-03-01","ids":{"openalex":"https://openalex.org/W2083604828","doi":"https://doi.org/10.1109/jetcas.2012.2187401","mag":"2083604828"},"language":"en","primary_location":{"id":"doi:10.1109/jetcas.2012.2187401","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jetcas.2012.2187401","pdf_url":null,"source":{"id":"https://openalex.org/S142323794","display_name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","issn_l":"2156-3357","issn":["2156-3357","2156-3365"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5108758365","display_name":"Wenqing Wu","orcid":null},"institutions":[{"id":"https://openalex.org/I19268510","display_name":"Qualcomm (United Kingdom)","ror":"https://ror.org/04d3djg48","country_code":"GB","type":"company","lineage":["https://openalex.org/I19268510","https://openalex.org/I4210087596"]},{"id":"https://openalex.org/I4210087596","display_name":"Qualcomm (United States)","ror":"https://ror.org/002zrf773","country_code":"US","type":"company","lineage":["https://openalex.org/I4210087596"]}],"countries":["GB","US"],"is_corresponding":false,"raw_author_name":"Wenqing Wu","raw_affiliation_strings":["Corporate Research and Development Division, QUALCOMM, Incorporated, San Diego, CA, USA","Corp. R & D Div., Qualcomm Inc., San Diego, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Corporate Research and Development Division, QUALCOMM, Incorporated, San Diego, CA, USA","institution_ids":["https://openalex.org/I4210087596"]},{"raw_affiliation_string":"Corp. R & D Div., Qualcomm Inc., San Diego, CA, USA","institution_ids":["https://openalex.org/I19268510"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112494616","display_name":"Xiaochun Zhu","orcid":null},"institutions":[{"id":"https://openalex.org/I19268510","display_name":"Qualcomm (United Kingdom)","ror":"https://ror.org/04d3djg48","country_code":"GB","type":"company","lineage":["https://openalex.org/I19268510","https://openalex.org/I4210087596"]},{"id":"https://openalex.org/I4210087596","display_name":"Qualcomm (United States)","ror":"https://ror.org/002zrf773","country_code":"US","type":"company","lineage":["https://openalex.org/I4210087596"]},{"id":"https://openalex.org/I4210111675","display_name":"Market Matters","ror":"https://ror.org/021yan307","country_code":"US","type":"nonprofit","lineage":["https://openalex.org/I4210111675"]}],"countries":["GB","US"],"is_corresponding":false,"raw_author_name":"Xiaochun Zhu","raw_affiliation_strings":["QCT Division, QUALCOMM, Incorporated, San Diego, CA, USA","QCT Div., Qualcomm Inc., San Diego, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"QCT Division, QUALCOMM, Incorporated, San Diego, CA, USA","institution_ids":["https://openalex.org/I4210087596"]},{"raw_affiliation_string":"QCT Div., Qualcomm Inc., San Diego, CA, USA","institution_ids":["https://openalex.org/I19268510","https://openalex.org/I4210111675"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103061707","display_name":"Seung H. Kang","orcid":"https://orcid.org/0000-0003-4270-9918"},"institutions":[{"id":"https://openalex.org/I19268510","display_name":"Qualcomm (United Kingdom)","ror":"https://ror.org/04d3djg48","country_code":"GB","type":"company","lineage":["https://openalex.org/I19268510","https://openalex.org/I4210087596"]},{"id":"https://openalex.org/I4210087596","display_name":"Qualcomm (United States)","ror":"https://ror.org/002zrf773","country_code":"US","type":"company","lineage":["https://openalex.org/I4210087596"]},{"id":"https://openalex.org/I4210111675","display_name":"Market Matters","ror":"https://ror.org/021yan307","country_code":"US","type":"nonprofit","lineage":["https://openalex.org/I4210111675"]}],"countries":["GB","US"],"is_corresponding":false,"raw_author_name":"Seung Kang","raw_affiliation_strings":["QCT Division, QUALCOMM, Incorporated, San Diego, CA, USA","QCT Div., Qualcomm Inc., San Diego, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"QCT Division, QUALCOMM, Incorporated, San Diego, CA, USA","institution_ids":["https://openalex.org/I4210087596"]},{"raw_affiliation_string":"QCT Div., Qualcomm Inc., San Diego, CA, USA","institution_ids":["https://openalex.org/I19268510","https://openalex.org/I4210111675"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Kendrick Yuen","orcid":null},"institutions":[{"id":"https://openalex.org/I19268510","display_name":"Qualcomm (United Kingdom)","ror":"https://ror.org/04d3djg48","country_code":"GB","type":"company","lineage":["https://openalex.org/I19268510","https://openalex.org/I4210087596"]},{"id":"https://openalex.org/I4210087596","display_name":"Qualcomm (United States)","ror":"https://ror.org/002zrf773","country_code":"US","type":"company","lineage":["https://openalex.org/I4210087596"]}],"countries":["GB","US"],"is_corresponding":false,"raw_author_name":"Kendrick Yuen","raw_affiliation_strings":["Corporate Research and Development Division, QUALCOMM, Incorporated, San Diego, CA, USA","Corp. R & D Div., Qualcomm Inc., San Diego, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Corporate Research and Development Division, QUALCOMM, Incorporated, San Diego, CA, USA","institution_ids":["https://openalex.org/I4210087596"]},{"raw_affiliation_string":"Corp. R & D Div., Qualcomm Inc., San Diego, CA, USA","institution_ids":["https://openalex.org/I19268510"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5087574107","display_name":"Rob Gilmore","orcid":null},"institutions":[{"id":"https://openalex.org/I19268510","display_name":"Qualcomm (United Kingdom)","ror":"https://ror.org/04d3djg48","country_code":"GB","type":"company","lineage":["https://openalex.org/I19268510","https://openalex.org/I4210087596"]},{"id":"https://openalex.org/I4210087596","display_name":"Qualcomm (United States)","ror":"https://ror.org/002zrf773","country_code":"US","type":"company","lineage":["https://openalex.org/I4210087596"]}],"countries":["GB","US"],"is_corresponding":false,"raw_author_name":"Rob Gilmore","raw_affiliation_strings":["Corporate Research and Development Division, QUALCOMM, Incorporated, San Diego, CA, USA","Corp. R & D Div., Qualcomm Inc., San Diego, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Corporate Research and Development Division, QUALCOMM, Incorporated, San Diego, CA, USA","institution_ids":["https://openalex.org/I4210087596"]},{"raw_affiliation_string":"Corp. R & D Div., Qualcomm Inc., San Diego, CA, USA","institution_ids":["https://openalex.org/I19268510"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.068,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.7742624,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"2","issue":"1","first_page":"42","last_page":"51"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.996999979019165,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9969000220298767,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/spin-transfer-torque","display_name":"Spin-transfer torque","score":0.8222389221191406},{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.7991649508476257},{"id":"https://openalex.org/keywords/probabilistic-logic","display_name":"Probabilistic logic","score":0.6616207957267761},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6112281084060669},{"id":"https://openalex.org/keywords/tunnel-magnetoresistance","display_name":"Tunnel magnetoresistance","score":0.5799924731254578},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.48140668869018555},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4616144895553589},{"id":"https://openalex.org/keywords/torque","display_name":"Torque","score":0.45505836606025696},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4422629177570343},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3373499810695648},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.2646266222000122},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2440810203552246},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.09514787793159485},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.09099313616752625}],"concepts":[{"id":"https://openalex.org/C609986","wikidata":"https://www.wikidata.org/wiki/Q844840","display_name":"Spin-transfer torque","level":4,"score":0.8222389221191406},{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.7991649508476257},{"id":"https://openalex.org/C49937458","wikidata":"https://www.wikidata.org/wiki/Q2599292","display_name":"Probabilistic logic","level":2,"score":0.6616207957267761},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6112281084060669},{"id":"https://openalex.org/C56202322","wikidata":"https://www.wikidata.org/wiki/Q1884383","display_name":"Tunnel magnetoresistance","level":3,"score":0.5799924731254578},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.48140668869018555},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4616144895553589},{"id":"https://openalex.org/C144171764","wikidata":"https://www.wikidata.org/wiki/Q48103","display_name":"Torque","level":2,"score":0.45505836606025696},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4422629177570343},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3373499810695648},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.2646266222000122},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2440810203552246},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.09514787793159485},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.09099313616752625},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.0},{"id":"https://openalex.org/C32546565","wikidata":"https://www.wikidata.org/wiki/Q856711","display_name":"Magnetization","level":3,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jetcas.2012.2187401","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jetcas.2012.2187401","pdf_url":null,"source":{"id":"https://openalex.org/S142323794","display_name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","issn_l":"2156-3357","issn":["2156-3357","2156-3365"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320308258","display_name":"Qualcomm","ror":"https://ror.org/002zrf773"},{"id":"https://openalex.org/F4320322990","display_name":"Sichuan University","ror":"https://ror.org/011ashp19"},{"id":"https://openalex.org/F4320324787","display_name":"Peking University","ror":"https://ror.org/02v51f717"},{"id":"https://openalex.org/F4320332688","display_name":"University of California, Irvine","ror":"https://ror.org/04gyf1771"},{"id":"https://openalex.org/F4320337512","display_name":"Nuclear Physics","ror":"https://ror.org/02atag894"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1970210268","https://openalex.org/W2008904077","https://openalex.org/W2013820523","https://openalex.org/W2140392630","https://openalex.org/W2156728623","https://openalex.org/W2159904000","https://openalex.org/W2543205889","https://openalex.org/W6652408048","https://openalex.org/W6683132901","https://openalex.org/W6684149499","https://openalex.org/W6729029536"],"related_works":["https://openalex.org/W4226197542","https://openalex.org/W1977755618","https://openalex.org/W2034593071","https://openalex.org/W1970094457","https://openalex.org/W4231059390","https://openalex.org/W3136027979","https://openalex.org/W2490184523","https://openalex.org/W2543376619","https://openalex.org/W2289300168","https://openalex.org/W2143391424"],"abstract_inverted_index":{"Novel":[0],"memory":[1,6,15,26,37,65],"programming":[2,18,49,96,108,113,132,144,150,158,162,172],"methods":[3],"and":[4,51,99,115,152,174],"corresponding":[5],"structures":[7],"are":[8,88,199],"presented":[9,201],"in":[10,90,140,169,202],"this":[11,17,91,102,203],"paper.":[12,204],"Unlike":[13],"conventional":[14,126],"programming,":[16],"technique":[19,29,54],"does":[20],"not":[21],"require":[22],"deterministic":[23,127,157],"switching":[24,34,86],"of":[25,36,125,171,179],"elements.":[27],"This":[28,53],"explicitly":[30],"exploits":[31],"the":[32,123,155],"probabilistic":[33,107,143],"characteristics":[35],"elements":[38],"such":[39],"as":[40],"spin-transfer":[41,60],"torque":[42,61],"magnetic":[43],"tunnel":[44],"junction":[45],"(STT-MTJ)":[46],"to":[47,67,109,120,167],"reduce":[48,168],"power":[50,116,173],"delay.":[52,175],"also":[55,183,200],"allows":[56],"multilevel":[57],"cell":[58],"(MLC)":[59],"magnetoresistive":[62],"random":[63],"access":[64],"(STT-MRAM)":[66],"be":[68,118,138],"fabricated":[69,187],"with":[70],"existing":[71,110],"STT-MTJ":[72,85,180,188],"fabrication":[73],"processes,":[74],"thus":[75],"making":[76],"high":[77],"capacity":[78],"STT-MRAM":[79,198],"chips":[80],"readily":[81],"achievable.":[82],"The":[83,176,190],"optimal":[84],"probabilities":[87],"given":[89],"paper":[92,103],"for":[93,193],"reaching":[94],"minimum":[95],"delay,":[97],"power,":[98],"iteration.":[100],"Moreover,":[101],"proves,":[104],"by":[105],"applying":[106],"STT-MTJs,":[111],"both":[112],"delay":[114,151],"can":[117,137],"reduced":[119],"levels":[121],"beyond":[122],"reach":[124],"programming.":[128],"Furthermore":[129],"arbitrarily":[130],"small":[131],"bit":[133],"error":[134],"rate":[135],"(BER)":[136],"accomplished":[139],"theory":[141],"using":[142,186],"without":[145],"much":[146],"penalty":[147],"on":[148],"average":[149],"power.":[153],"On":[154],"contrary,":[156],"always":[159],"presents":[160],"finite":[161],"BER,":[163],"which":[164],"is":[165],"expensive":[166],"terms":[170],"MLC":[177,197],"capability":[178],"clusters":[181],"has":[182],"been":[184],"confirmed":[185],"devices.":[189],"major":[191],"circuitries":[192],"implementing":[194],"probabilistically":[195],"programmed":[196]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}