{"id":"https://openalex.org/W4386474831","doi":"https://doi.org/10.1109/isvlsi59464.2023.10238633","title":"Design Exploration of Dynamic Multi-Level Ternary Content-Addressable Memory Using Nanoelectromechanical Relays","display_name":"Design Exploration of Dynamic Multi-Level Ternary Content-Addressable Memory Using Nanoelectromechanical Relays","publication_year":2023,"publication_date":"2023-06-20","ids":{"openalex":"https://openalex.org/W4386474831","doi":"https://doi.org/10.1109/isvlsi59464.2023.10238633"},"language":"en","primary_location":{"id":"doi:10.1109/isvlsi59464.2023.10238633","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isvlsi59464.2023.10238633","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102894049","display_name":"Taixin Li","orcid":"https://orcid.org/0000-0001-8366-335X"},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Taixin Li","raw_affiliation_strings":["Tsinghua University,BNRist, Electronic Engineering,Beijing,China","BNRist, Electronic Engineering, Tsinghua University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Tsinghua University,BNRist, Electronic Engineering,Beijing,China","institution_ids":["https://openalex.org/I99065089"]},{"raw_affiliation_string":"BNRist, Electronic Engineering, Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042859357","display_name":"Hongtao Zhong","orcid":"https://orcid.org/0000-0003-2527-4246"},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hongtao Zhong","raw_affiliation_strings":["Tsinghua University,BNRist, Electronic Engineering,Beijing,China","BNRist, Electronic Engineering, Tsinghua University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Tsinghua University,BNRist, Electronic Engineering,Beijing,China","institution_ids":["https://openalex.org/I99065089"]},{"raw_affiliation_string":"BNRist, Electronic Engineering, Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021884109","display_name":"Sumitha George","orcid":"https://orcid.org/0000-0002-5924-8807"},"institutions":[{"id":"https://openalex.org/I57328836","display_name":"North Dakota State University","ror":"https://ror.org/05h1bnb22","country_code":"US","type":"education","lineage":["https://openalex.org/I57328836"]},{"id":"https://openalex.org/I125467818","display_name":"Dakota State University","ror":"https://ror.org/016yv6y68","country_code":"US","type":"education","lineage":["https://openalex.org/I125467818"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sumitha George","raw_affiliation_strings":["North Dakota State University,USA","North Dakota State University, USA"],"affiliations":[{"raw_affiliation_string":"North Dakota State University,USA","institution_ids":["https://openalex.org/I125467818","https://openalex.org/I57328836"]},{"raw_affiliation_string":"North Dakota State University, USA","institution_ids":["https://openalex.org/I125467818","https://openalex.org/I57328836"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101919131","display_name":"Vijaykrishnan Narayanan","orcid":"https://orcid.org/0000-0001-6266-6068"},"institutions":[{"id":"https://openalex.org/I130769515","display_name":"Pennsylvania State University","ror":"https://ror.org/04p491231","country_code":"US","type":"education","lineage":["https://openalex.org/I130769515"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Vijaykrishnan Narayanan","raw_affiliation_strings":["The Pennsylvania State University,USA","The Pennsylvania State University, USA"],"affiliations":[{"raw_affiliation_string":"The Pennsylvania State University,USA","institution_ids":["https://openalex.org/I130769515"]},{"raw_affiliation_string":"The Pennsylvania State University, USA","institution_ids":["https://openalex.org/I130769515"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073520075","display_name":"Liang Shi","orcid":"https://orcid.org/0000-0002-9977-529X"},"institutions":[{"id":"https://openalex.org/I66867065","display_name":"East China Normal University","ror":"https://ror.org/02n96ep67","country_code":"CN","type":"education","lineage":["https://openalex.org/I66867065"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Liang Shi","raw_affiliation_strings":["East Normal University,Shanghai,China","East Normal University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"East Normal University,Shanghai,China","institution_ids":["https://openalex.org/I66867065"]},{"raw_affiliation_string":"East Normal University, Shanghai, China","institution_ids":["https://openalex.org/I66867065"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023755254","display_name":"Huazhong Yang","orcid":"https://orcid.org/0000-0003-2421-353X"},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Huazhong Yang","raw_affiliation_strings":["Tsinghua University,BNRist, Electronic Engineering,Beijing,China","BNRist, Electronic Engineering, Tsinghua University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Tsinghua University,BNRist, Electronic Engineering,Beijing,China","institution_ids":["https://openalex.org/I99065089"]},{"raw_affiliation_string":"BNRist, Electronic Engineering, Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100764674","display_name":"Xueqing Li","orcid":"https://orcid.org/0000-0002-8051-3345"},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xueqing Li","raw_affiliation_strings":["Tsinghua University,BNRist, Electronic Engineering,Beijing,China","BNRist, Electronic Engineering, Tsinghua University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Tsinghua University,BNRist, Electronic Engineering,Beijing,China","institution_ids":["https://openalex.org/I99065089"]},{"raw_affiliation_string":"BNRist, Electronic Engineering, Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I99065089"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5102894049"],"corresponding_institution_ids":["https://openalex.org/I99065089"],"apc_list":null,"apc_paid":null,"fwci":0.1339,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.44098881,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9976999759674072,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13182","display_name":"Quantum-Dot Cellular Automata","score":0.9973999857902527,"subfield":{"id":"https://openalex.org/subfields/1703","display_name":"Computational Theory and Mathematics"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.7308483123779297},{"id":"https://openalex.org/keywords/content-addressable-memory","display_name":"Content-addressable memory","score":0.63981032371521},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.6254323124885559},{"id":"https://openalex.org/keywords/dynamic-random-access-memory","display_name":"Dynamic random-access memory","score":0.5024104118347168},{"id":"https://openalex.org/keywords/ternary-operation","display_name":"Ternary operation","score":0.4578304886817932},{"id":"https://openalex.org/keywords/overhead","display_name":"Overhead (engineering)","score":0.42840877175331116},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.3753593862056732},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.22753319144248962},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.10085740685462952},{"id":"https://openalex.org/keywords/artificial-neural-network","display_name":"Artificial neural network","score":0.09573456645011902}],"concepts":[{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.7308483123779297},{"id":"https://openalex.org/C53442348","wikidata":"https://www.wikidata.org/wiki/Q745101","display_name":"Content-addressable memory","level":3,"score":0.63981032371521},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.6254323124885559},{"id":"https://openalex.org/C118702147","wikidata":"https://www.wikidata.org/wiki/Q189396","display_name":"Dynamic random-access memory","level":3,"score":0.5024104118347168},{"id":"https://openalex.org/C64452783","wikidata":"https://www.wikidata.org/wiki/Q1524945","display_name":"Ternary operation","level":2,"score":0.4578304886817932},{"id":"https://openalex.org/C2779960059","wikidata":"https://www.wikidata.org/wiki/Q7113681","display_name":"Overhead (engineering)","level":2,"score":0.42840877175331116},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.3753593862056732},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.22753319144248962},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.10085740685462952},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.09573456645011902},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isvlsi59464.2023.10238633","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isvlsi59464.2023.10238633","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320322392","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W2084362519","https://openalex.org/W2102754081","https://openalex.org/W2106313286","https://openalex.org/W2141061712","https://openalex.org/W2167442631","https://openalex.org/W2194321275","https://openalex.org/W2601450892","https://openalex.org/W2735485913","https://openalex.org/W2793019147","https://openalex.org/W2988640543","https://openalex.org/W3016568051","https://openalex.org/W3036064358","https://openalex.org/W3134703406","https://openalex.org/W3158275024","https://openalex.org/W4225350157","https://openalex.org/W4239175426","https://openalex.org/W4293057259","https://openalex.org/W6675180675","https://openalex.org/W6735236233"],"related_works":["https://openalex.org/W4392590355","https://openalex.org/W3151633427","https://openalex.org/W2212894501","https://openalex.org/W2793465010","https://openalex.org/W2068933159","https://openalex.org/W2561621772","https://openalex.org/W1966442185","https://openalex.org/W2186356227","https://openalex.org/W2662219006","https://openalex.org/W4379467072"],"abstract_inverted_index":{"Multi-Level":[0],"Ternary":[1],"Content":[2],"Addressable":[3],"Memories":[4],"(ML-TCAMs)":[5],"are":[6],"a":[7,55],"type":[8],"of":[9,74,111],"TCAM":[10],"that":[11,77,137],"can":[12,26],"calculate":[13],"the":[14,18,22,67,72,89,94,102,112,150,155,161,175,180],"hamming":[15],"distance":[16],"between":[17,58],"stored":[19],"data":[20],"and":[21,40,46,60,83,86,107,124,131,144,154,159],"input":[23],"vector,":[24],"which":[25],"be":[27],"used":[28],"to":[29,53,141,169],"accelerate":[30],"several":[31,37],"specific":[32],"applications.":[33],"There":[34],"have":[35],"been":[36],"existing":[38],"current-domain":[39,90],"charge-domain":[41,156],"ML-TCAMs":[42,76],"based":[43],"on":[44,171],"SRAMs":[45],"nonvolatile":[47,177],"memories":[48],"(NVMs).":[49],"However,":[50],"they":[51],"fail":[52],"meet":[54],"good":[56],"balance":[57],"area":[59,146],"computational":[61],"accuracy":[62,164],"tradeoffs.In":[63],"this":[64,116],"paper,":[65],"for":[66],"first":[68],"time,":[69],"we":[70],"explore":[71],"design":[73],"dynamic":[75,91],"achieve":[78],"both":[79],"high":[80,84,132],"cell":[81],"density":[82],"accuracy,":[85],"propose":[87],"DyLAN,":[88],"ML-TCAM":[92,153],"using":[93],"4-terminal":[95,113],"nanoelectromechanical":[96],"(NEM)":[97],"relays.":[98],"Specifically,":[99],"combined":[100],"with":[101,120,126,149,174],"nearly":[103],"zero":[104],"OFF-state":[105],"leakage":[106],"stable":[108],"ON-state":[109],"current":[110],"NEM":[114],"relays,":[115],"paper":[117],"proposes":[118],"DyLAN-W":[119],"ultra-long":[121],"retention":[122],"time":[123],"DyLAN-S":[125],"ultra-low":[127],"single":[128],"refresh":[129],"overhead":[130],"density,":[133],"respectively.":[134],"Results":[135],"show":[136],"DyLAN":[138],"achieves":[139],"up":[140],"2.7":[142],"x":[143],"4.9x":[145],"reduction":[147],"compared":[148,173],"16T":[151],"SRAM":[152],"ML-TCAMs,":[157],"respectively,":[158],"increases":[160],"few-shot":[162],"learning":[163],"by":[165],"13.7%":[166],"(from":[167],"79.9%":[168],"93.6%)":[170],"average":[172],"state-of-the-art":[176],"ML-TCAM,":[178],"i.e.,":[179],"2FeFET":[181],"ML-TCAM.":[182]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}