{"id":"https://openalex.org/W1512341149","doi":"https://doi.org/10.1109/isvdat.2015.7208146","title":"Performance study of side block oxide band gap engineered SONOS: A device simulation approach","display_name":"Performance study of side block oxide band gap engineered SONOS: A device simulation approach","publication_year":2015,"publication_date":"2015-06-01","ids":{"openalex":"https://openalex.org/W1512341149","doi":"https://doi.org/10.1109/isvdat.2015.7208146","mag":"1512341149"},"language":"en","primary_location":{"id":"doi:10.1109/isvdat.2015.7208146","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isvdat.2015.7208146","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 19th International Symposium on VLSI Design and Test","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5034933785","display_name":"G. Verma","orcid":null},"institutions":[{"id":"https://openalex.org/I9747756","display_name":"Atal Bihari Vajpayee Indian Institute of Information Technology and Management","ror":"https://ror.org/008b3ap06","country_code":"IN","type":"education","lineage":["https://openalex.org/I9747756"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Gagan Deep Verma","raw_affiliation_strings":["ABV-Indian Institute of Information Technology and Management, Gwalior, Madhya Pradesh, India","ABV-Indian Institute of Information Technology and Management, Gwalior, Madhya Pradesh, India - 474015"],"affiliations":[{"raw_affiliation_string":"ABV-Indian Institute of Information Technology and Management, Gwalior, Madhya Pradesh, India","institution_ids":["https://openalex.org/I9747756"]},{"raw_affiliation_string":"ABV-Indian Institute of Information Technology and Management, Gwalior, Madhya Pradesh, India - 474015","institution_ids":["https://openalex.org/I9747756"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5038140573","display_name":"Manisha Pattanaik","orcid":"https://orcid.org/0000-0001-7842-0695"},"institutions":[{"id":"https://openalex.org/I9747756","display_name":"Atal Bihari Vajpayee Indian Institute of Information Technology and Management","ror":"https://ror.org/008b3ap06","country_code":"IN","type":"education","lineage":["https://openalex.org/I9747756"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Manisha Pattanaik","raw_affiliation_strings":["ABV-Indian Institute of Information Technology and Management, Gwalior, Madhya Pradesh, India","ABV-Indian Institute of Information Technology and Management, Gwalior, Madhya Pradesh, India - 474015"],"affiliations":[{"raw_affiliation_string":"ABV-Indian Institute of Information Technology and Management, Gwalior, Madhya Pradesh, India","institution_ids":["https://openalex.org/I9747756"]},{"raw_affiliation_string":"ABV-Indian Institute of Information Technology and Management, Gwalior, Madhya Pradesh, India - 474015","institution_ids":["https://openalex.org/I9747756"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5034933785"],"corresponding_institution_ids":["https://openalex.org/I9747756"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.01981577,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7204779386520386},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6588582992553711},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.6223400831222534},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.6140276789665222},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6052201986312866},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5363287925720215},{"id":"https://openalex.org/keywords/controllability","display_name":"Controllability","score":0.5082795023918152},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.4847507178783417},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.4547613561153412},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.41970905661582947},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.39527231454849243},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3759407103061676},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1568307876586914},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1445906162261963}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7204779386520386},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6588582992553711},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.6223400831222534},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.6140276789665222},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6052201986312866},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5363287925720215},{"id":"https://openalex.org/C48209547","wikidata":"https://www.wikidata.org/wiki/Q1331104","display_name":"Controllability","level":2,"score":0.5082795023918152},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.4847507178783417},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.4547613561153412},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.41970905661582947},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.39527231454849243},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3759407103061676},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1568307876586914},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1445906162261963},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C28826006","wikidata":"https://www.wikidata.org/wiki/Q33521","display_name":"Applied mathematics","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isvdat.2015.7208146","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isvdat.2015.7208146","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 19th International Symposium on VLSI Design and Test","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8399999737739563,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W1970550128","https://openalex.org/W1971934056","https://openalex.org/W1994202376","https://openalex.org/W2009228970","https://openalex.org/W2065368631","https://openalex.org/W2084571262","https://openalex.org/W2110395205","https://openalex.org/W2132555393","https://openalex.org/W2171496030","https://openalex.org/W2533220969","https://openalex.org/W2541155559","https://openalex.org/W6684992860","https://openalex.org/W6728700166"],"related_works":["https://openalex.org/W2036697162","https://openalex.org/W2411113819","https://openalex.org/W2072887367","https://openalex.org/W2332386680","https://openalex.org/W2561315646","https://openalex.org/W2049186354","https://openalex.org/W1634484921","https://openalex.org/W2131788322","https://openalex.org/W2058564794","https://openalex.org/W2020133164"],"abstract_inverted_index":{"High":[0],"density":[1,110],"Non":[2],"Volatile":[3],"Memory":[4],"(NVM)":[5],"requires":[6],"large":[7,88],"threshold":[8,89,132,139],"window":[9,90],"and":[10,73,92,137,140],"small":[11,94],"leakage":[12,70,135],"current":[13,71,136],"which":[14],"will":[15],"decrease":[16],"detrapping":[17],"of":[18,131],"charge":[19],"from":[20],"storage":[21],"dielectric.":[22],"In":[23],"order":[24],"to":[25,53],"achieve":[26],"this,":[27],"a":[28,93],"novel":[29],"device":[30,49,98,118,124],"structure":[31],"called":[32],"side":[33,57,114],"block":[34,58,115],"oxide":[35,59,116],"band":[36,81],"gap":[37,82],"engineered":[38],"SONOS(SBO-BESONOS)":[39],"is":[40,51,111],"proposed.":[41],"SBO-BESONOS":[42],"overcomes":[43],"the":[44,78],"short":[45],"channel":[46,66],"effects":[47],"when":[48],"size":[50],"reduced":[52],"nanometer":[54],"regime.":[55],"The":[56,80,113,123],"suppresses":[60],"source/drain":[61],"electric":[62],"field":[63],"interference":[64],"with":[65,87,144],"conduction.":[67],"It":[68],"reduces":[69],"significantly":[72],"increases":[74],"gate":[75,95],"controllability":[76],"over":[77],"channel.":[79],"engineering":[83],"improves":[84,117],"retention":[85],">10yrs":[86],">4V":[91],"voltage.":[96],"This":[97],"can":[99],"be":[100],"used":[101],"for":[102],"Multi":[103],"Level":[104],"Cell(MLC)":[105],"applications":[106],"where":[107],"high":[108],"bit":[109],"required.":[112],"performance":[119],"at":[120],"elevated":[121],"temperature.":[122],"characterization":[125],"delivers":[126],"promising":[127],"results":[128],"in":[129],"terms":[130],"window,":[133],"retention,":[134],"programming":[138],"also":[141],"fully":[142],"compatible":[143],"state-of-the-art":[145],"CMOS":[146],"technology.":[147]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}