{"id":"https://openalex.org/W1592704993","doi":"https://doi.org/10.1109/isvdat.2015.7208121","title":"Design of area efficient and low power bandgap voltage reference using sub-threshold MOS transistors","display_name":"Design of area efficient and low power bandgap voltage reference using sub-threshold MOS transistors","publication_year":2015,"publication_date":"2015-06-01","ids":{"openalex":"https://openalex.org/W1592704993","doi":"https://doi.org/10.1109/isvdat.2015.7208121","mag":"1592704993"},"language":"en","primary_location":{"id":"doi:10.1109/isvdat.2015.7208121","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isvdat.2015.7208121","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 19th International Symposium on VLSI Design and Test","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5033739907","display_name":"Prashant Khot","orcid":null},"institutions":[{"id":"https://openalex.org/I3132975163","display_name":"KLE Technological University","ror":"https://ror.org/04yh52k23","country_code":"IN","type":"education","lineage":["https://openalex.org/I3132975163"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Prashant Khot","raw_affiliation_strings":["Electronics and Communication BVBCET, Hubli, India","Electronics and Communication, BVBCET, Hubli, India"],"affiliations":[{"raw_affiliation_string":"Electronics and Communication BVBCET, Hubli, India","institution_ids":["https://openalex.org/I3132975163"]},{"raw_affiliation_string":"Electronics and Communication, BVBCET, Hubli, India","institution_ids":["https://openalex.org/I3132975163"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5041791175","display_name":"Rajashekar B. Shettar","orcid":"https://orcid.org/0000-0002-0240-1647"},"institutions":[{"id":"https://openalex.org/I3132975163","display_name":"KLE Technological University","ror":"https://ror.org/04yh52k23","country_code":"IN","type":"education","lineage":["https://openalex.org/I3132975163"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Rajashekhar B. Shettar","raw_affiliation_strings":["Electronics and Communication BVBCET, Hubli, India","Electronics and Communication, BVBCET, Hubli, India"],"affiliations":[{"raw_affiliation_string":"Electronics and Communication BVBCET, Hubli, India","institution_ids":["https://openalex.org/I3132975163"]},{"raw_affiliation_string":"Electronics and Communication, BVBCET, Hubli, India","institution_ids":["https://openalex.org/I3132975163"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5033739907"],"corresponding_institution_ids":["https://openalex.org/I3132975163"],"apc_list":null,"apc_paid":null,"fwci":0.7081,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.69791479,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/bandgap-voltage-reference","display_name":"Bandgap voltage reference","score":0.9480392932891846},{"id":"https://openalex.org/keywords/voltage-reference","display_name":"Voltage reference","score":0.6241351366043091},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5993223190307617},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5631466507911682},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.5120113492012024},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.48301514983177185},{"id":"https://openalex.org/keywords/temperature-coefficient","display_name":"Temperature coefficient","score":0.47929447889328003},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.45315858721733093},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.4489353597164154},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.44453558325767517},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.4161926805973053},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3435114026069641},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3326537013053894},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.25603389739990234},{"id":"https://openalex.org/keywords/dropout-voltage","display_name":"Dropout voltage","score":0.1810198724269867}],"concepts":[{"id":"https://openalex.org/C127033052","wikidata":"https://www.wikidata.org/wiki/Q48635","display_name":"Bandgap voltage reference","level":5,"score":0.9480392932891846},{"id":"https://openalex.org/C44351266","wikidata":"https://www.wikidata.org/wiki/Q1465532","display_name":"Voltage reference","level":3,"score":0.6241351366043091},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5993223190307617},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5631466507911682},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.5120113492012024},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.48301514983177185},{"id":"https://openalex.org/C16643434","wikidata":"https://www.wikidata.org/wiki/Q898642","display_name":"Temperature coefficient","level":2,"score":0.47929447889328003},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.45315858721733093},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.4489353597164154},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.44453558325767517},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.4161926805973053},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3435114026069641},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3326537013053894},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.25603389739990234},{"id":"https://openalex.org/C15032970","wikidata":"https://www.wikidata.org/wiki/Q851210","display_name":"Dropout voltage","level":4,"score":0.1810198724269867}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isvdat.2015.7208121","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isvdat.2015.7208121","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 19th International Symposium on VLSI Design and Test","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8600000143051147,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1504370941","https://openalex.org/W1566916904","https://openalex.org/W1975132130","https://openalex.org/W1976272148","https://openalex.org/W1993346664","https://openalex.org/W2018918953","https://openalex.org/W2063976541","https://openalex.org/W2073652717","https://openalex.org/W2092954710","https://openalex.org/W2100463091","https://openalex.org/W2118333676","https://openalex.org/W2128134737","https://openalex.org/W2133201500","https://openalex.org/W2139801901","https://openalex.org/W2141207690","https://openalex.org/W2141958731","https://openalex.org/W2147646773","https://openalex.org/W2164546195","https://openalex.org/W6633800908"],"related_works":["https://openalex.org/W2370820504","https://openalex.org/W1970992322","https://openalex.org/W2372270451","https://openalex.org/W2370976371","https://openalex.org/W2394281553","https://openalex.org/W3004564537","https://openalex.org/W2382539836","https://openalex.org/W2792398527","https://openalex.org/W2134241135","https://openalex.org/W2371305626"],"abstract_inverted_index":{"Voltage":[0],"references":[1],"are":[2],"very":[3,161],"essential":[4],"components":[5],"of":[6,38,66,88,101,111,119,127,140,146,154],"analog":[7],"VLSI":[8],"circuits.":[9],"A":[10],"reference":[11,64,93],"source":[12],"is":[13,42,133,160,172],"expected":[14],"to":[15,49,54,79,129,135,165],"remain":[16],"constant":[17,138],"against":[18],"supply":[19,118],"voltage,":[20],"temperature":[21,36,51,125,144],"and":[22,69,75,104,122,183],"process":[23,177],"parameter":[24],"variations.":[25],"The":[26,60,113,131,148,169],"forward":[27],"voltage":[28,58,63,92,139],"drop":[29],"across":[30,174],"junction":[31],"diode":[32],"exhibits":[33],"a":[34,45,85,105,117,124,137,143],"negative":[35],"dependence":[37],"about":[39],"2mV/\u00b0C,":[40],"which":[41,159],"compensated":[43],"by":[44],"suitably":[46],"scaled":[47],"proportional":[48],"absolute":[50],"(PTAT)":[52],"component":[53],"obtain":[55],"the":[56,176],"bandgap":[57,62,91],"reference.":[59],"conventional":[61],"constituting":[65],"bipolar":[67,102],"transistors":[68,98,103],"opamp":[70],"will":[71],"consume":[72],"more":[73],"power":[74,90],"area.":[76],"In":[77],"order":[78],"overcome":[80],"this":[81],"drawback,":[82],"we":[83],"propose":[84],"novel":[86],"design":[87],"low":[89],"that":[94],"substitutes":[95],"sub-threshold":[96],"MOS":[97],"in":[99,109,185],"place":[100,110],"regenerative":[106],"bias":[107],"circuit":[108,114,132,150],"opamp.":[112],"works":[115],"on":[116],"1V":[120],"(\u00b110%)":[121],"within":[123],"range":[126],"-40\u00b0C":[128],"125\u00b0C.":[130],"designed":[134,170],"give":[136],"546.3mV":[141],"with":[142],"coefficient":[145],"14.4ppm/\u00b0C.":[147],"proposed":[149],"occupies":[151],"an":[152],"area":[153],"0.0094mm":[155],"<sup":[156],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[157],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[158],"less":[162],"as":[163],"compared":[164],"commonly":[166],"used":[167],"architectures.":[168],"architecture":[171],"tested":[173],"all":[175],"corners":[178],"[SS,":[179],"FF,":[180],"TT,":[181],"SNFP":[182],"FNSP]":[184],"180nm":[186],"technology":[187],"using":[188],"CADENCE":[189],"tool":[190],"(UMC180).":[191]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}