{"id":"https://openalex.org/W1598599316","doi":"https://doi.org/10.1109/isvdat.2015.7208083","title":"Fabrication and characterization of Al gate n-MOSFET, on-chip fabricated with Si&lt;inf&gt;3&lt;/inf&gt;N&lt;inf&gt;4&lt;/inf&gt; ISFET","display_name":"Fabrication and characterization of Al gate n-MOSFET, on-chip fabricated with Si&lt;inf&gt;3&lt;/inf&gt;N&lt;inf&gt;4&lt;/inf&gt; ISFET","publication_year":2015,"publication_date":"2015-06-01","ids":{"openalex":"https://openalex.org/W1598599316","doi":"https://doi.org/10.1109/isvdat.2015.7208083","mag":"1598599316"},"language":"en","primary_location":{"id":"doi:10.1109/isvdat.2015.7208083","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isvdat.2015.7208083","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 19th International Symposium on VLSI Design and Test","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5080520739","display_name":"Rubina Chaudhary","orcid":"https://orcid.org/0000-0002-0486-1022"},"institutions":[{"id":"https://openalex.org/I41763900","display_name":"Central Electronics Engineering Research Institute","ror":"https://ror.org/01hh45364","country_code":"IN","type":"facility","lineage":["https://openalex.org/I2799351866","https://openalex.org/I41763900","https://openalex.org/I4210134808","https://openalex.org/I66760702"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"R Chaudhary","raw_affiliation_strings":["CSIR-Central Electronics Engineering Research Institute (CEERI), Pilani, (Raj.), India"],"affiliations":[{"raw_affiliation_string":"CSIR-Central Electronics Engineering Research Institute (CEERI), Pilani, (Raj.), India","institution_ids":["https://openalex.org/I41763900"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101817203","display_name":"Amit Sharma","orcid":"https://orcid.org/0000-0002-6213-0420"},"institutions":[{"id":"https://openalex.org/I41763900","display_name":"Central Electronics Engineering Research Institute","ror":"https://ror.org/01hh45364","country_code":"IN","type":"facility","lineage":["https://openalex.org/I2799351866","https://openalex.org/I41763900","https://openalex.org/I4210134808","https://openalex.org/I66760702"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"A Sharma","raw_affiliation_strings":["CSIR-Central Electronics Engineering Research Institute (CEERI), Pilani, (Raj.), India"],"affiliations":[{"raw_affiliation_string":"CSIR-Central Electronics Engineering Research Institute (CEERI), Pilani, (Raj.), India","institution_ids":["https://openalex.org/I41763900"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031083830","display_name":"Soumendu Sinha","orcid":"https://orcid.org/0000-0003-3088-7637"},"institutions":[{"id":"https://openalex.org/I99364266","display_name":"Academy of Scientific and Innovative Research","ror":"https://ror.org/053rcsq61","country_code":"IN","type":"education","lineage":["https://openalex.org/I99364266"]},{"id":"https://openalex.org/I41763900","display_name":"Central Electronics Engineering Research Institute","ror":"https://ror.org/01hh45364","country_code":"IN","type":"facility","lineage":["https://openalex.org/I2799351866","https://openalex.org/I41763900","https://openalex.org/I4210134808","https://openalex.org/I66760702"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"S Sinha","raw_affiliation_strings":["Academy of Scientific and Innovative Research (AcSIR), New Delhi, India","CSIR-Central Electronics Engineering Research Institute (CEERI), Pilani, (Raj.), India"],"affiliations":[{"raw_affiliation_string":"Academy of Scientific and Innovative Research (AcSIR), New Delhi, India","institution_ids":["https://openalex.org/I99364266"]},{"raw_affiliation_string":"CSIR-Central Electronics Engineering Research Institute (CEERI), Pilani, (Raj.), India","institution_ids":["https://openalex.org/I41763900"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109879145","display_name":"Jyoti Yadav","orcid":null},"institutions":[{"id":"https://openalex.org/I41763900","display_name":"Central Electronics Engineering Research Institute","ror":"https://ror.org/01hh45364","country_code":"IN","type":"facility","lineage":["https://openalex.org/I2799351866","https://openalex.org/I41763900","https://openalex.org/I4210134808","https://openalex.org/I66760702"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"J Yadav","raw_affiliation_strings":["CSIR-Central Electronics Engineering Research Institute (CEERI), Pilani, (Raj.), India"],"affiliations":[{"raw_affiliation_string":"CSIR-Central Electronics Engineering Research Institute (CEERI), Pilani, (Raj.), India","institution_ids":["https://openalex.org/I41763900"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036762665","display_name":"Ramakant Sharma","orcid":"https://orcid.org/0000-0002-4518-6641"},"institutions":[{"id":"https://openalex.org/I41763900","display_name":"Central Electronics Engineering Research Institute","ror":"https://ror.org/01hh45364","country_code":"IN","type":"facility","lineage":["https://openalex.org/I2799351866","https://openalex.org/I41763900","https://openalex.org/I4210134808","https://openalex.org/I66760702"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"R Sharma","raw_affiliation_strings":["CSIR- Central Electronics Engineering Research Institute (CEERI), Pilani-333031 (Raj.) India"],"affiliations":[{"raw_affiliation_string":"CSIR- Central Electronics Engineering Research Institute (CEERI), Pilani-333031 (Raj.) India","institution_ids":["https://openalex.org/I41763900"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025639572","display_name":"Ravindra Mukhiya","orcid":"https://orcid.org/0000-0003-2002-167X"},"institutions":[{"id":"https://openalex.org/I41763900","display_name":"Central Electronics Engineering Research Institute","ror":"https://ror.org/01hh45364","country_code":"IN","type":"facility","lineage":["https://openalex.org/I2799351866","https://openalex.org/I41763900","https://openalex.org/I4210134808","https://openalex.org/I66760702"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"R Mukhiya","raw_affiliation_strings":["Central Electronics Engineering Research Institute CSIR, Pilani, Rajasthan, IN"],"affiliations":[{"raw_affiliation_string":"Central Electronics Engineering Research Institute CSIR, Pilani, Rajasthan, IN","institution_ids":["https://openalex.org/I41763900"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109925310","display_name":"V. K. Khanna","orcid":null},"institutions":[{"id":"https://openalex.org/I99364266","display_name":"Academy of Scientific and Innovative Research","ror":"https://ror.org/053rcsq61","country_code":"IN","type":"education","lineage":["https://openalex.org/I99364266"]},{"id":"https://openalex.org/I41763900","display_name":"Central Electronics Engineering Research Institute","ror":"https://ror.org/01hh45364","country_code":"IN","type":"facility","lineage":["https://openalex.org/I2799351866","https://openalex.org/I41763900","https://openalex.org/I4210134808","https://openalex.org/I66760702"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"V K Khanna","raw_affiliation_strings":["Academy of Scientific and Innovative Research (AcSIR), New Delhi, India","CSIR-Central Electronics Engineering Research Institute (CEERI), Pilani, (Raj.), India"],"affiliations":[{"raw_affiliation_string":"Academy of Scientific and Innovative Research (AcSIR), New Delhi, India","institution_ids":["https://openalex.org/I99364266"]},{"raw_affiliation_string":"CSIR-Central Electronics Engineering Research Institute (CEERI), Pilani, (Raj.), India","institution_ids":["https://openalex.org/I41763900"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5080520739"],"corresponding_institution_ids":["https://openalex.org/I41763900"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.02674129,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"50","issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11472","display_name":"Analytical Chemistry and Sensors","score":1.0,"subfield":{"id":"https://openalex.org/subfields/1502","display_name":"Bioengineering"},"field":{"id":"https://openalex.org/fields/15","display_name":"Chemical Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11472","display_name":"Analytical Chemistry and Sensors","score":1.0,"subfield":{"id":"https://openalex.org/subfields/1502","display_name":"Bioengineering"},"field":{"id":"https://openalex.org/fields/15","display_name":"Chemical Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10461","display_name":"Gas Sensing Nanomaterials and Sensors","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/isfet","display_name":"ISFET","score":0.7941179871559143},{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.7730712890625},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.753497302532196},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6569263339042664},{"id":"https://openalex.org/keywords/characterization","display_name":"Characterization (materials science)","score":0.6369308829307556},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5627843737602234},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.5334610939025879},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.44656306505203247},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.44027185440063477},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.37685713171958923},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2279871106147766},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2003394067287445},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16341310739517212},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.15755867958068848},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.10507923364639282}],"concepts":[{"id":"https://openalex.org/C154275363","wikidata":"https://www.wikidata.org/wiki/Q904133","display_name":"ISFET","level":5,"score":0.7941179871559143},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.7730712890625},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.753497302532196},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6569263339042664},{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.6369308829307556},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5627843737602234},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.5334610939025879},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.44656306505203247},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.44027185440063477},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.37685713171958923},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2279871106147766},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2003394067287445},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16341310739517212},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.15755867958068848},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10507923364639282},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isvdat.2015.7208083","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isvdat.2015.7208083","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 19th International Symposium on VLSI Design and Test","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.5099999904632568,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320335278","display_name":"Central Electronics Engineering Research Institute","ror":"https://ror.org/01hh45364"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1967539302","https://openalex.org/W2024624086","https://openalex.org/W2106018048","https://openalex.org/W2119399232","https://openalex.org/W2416420851","https://openalex.org/W2993139634","https://openalex.org/W6716228260","https://openalex.org/W6771445734","https://openalex.org/W6922175906"],"related_works":["https://openalex.org/W2899084033","https://openalex.org/W2081689989","https://openalex.org/W2008483000","https://openalex.org/W2070850903","https://openalex.org/W2754462113","https://openalex.org/W2905286381","https://openalex.org/W4240308501","https://openalex.org/W2611581926","https://openalex.org/W2613596480","https://openalex.org/W1964995182"],"abstract_inverted_index":{"This":[0],"paper":[1,29],"reports":[2],"the":[3,20,31,44,69,88],"fabrication":[4],"of":[5,36,43,76,109],"n-type":[6],"MOSFET":[7,79],"using":[8,64,122],"Si":[9,49],"<inf":[10,14,50,54],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[11,15,51,55,125],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</inf>":[12,52],"N":[13,53],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">4</inf>":[16,56],"as":[17,23,95],"dielectric":[18],"on":[19],"same":[21],"wafer":[22],"ISFET":[24,26,45,90],"for":[25],"characterization.":[27],"The":[28,41],"presents":[30],"fabrication,":[32],"simulation":[33],"and":[34,73,82,115],"characterization":[35],"metal-oxide":[37],"field-effect":[38],"transistor":[39],"(MOSFET).":[40],"gate":[42,70],"is":[46,100],"stacked":[47],"with":[48],"sensing":[57,105],"membrane":[58],"layer":[59],"that":[60],"has":[61,112],"been":[62],"deposited":[63],"LPCVD":[65],"system":[66],"to":[67,86,92],"cover":[68],"area.":[71],"Output":[72],"transfer":[74],"characteristics":[75],"on-chip":[77],"fabricated":[78,89],"are":[80],"obtained":[81],"measured":[83],"in":[84],"order":[85],"study":[87],"behavior":[91],"be":[93],"used":[94],"pH":[96],"sensor.":[97],"Silicon":[98],"nitride":[99],"preferred":[101],"over":[102],"silicon":[103],"dioxide":[104],"film/dielectric":[106],"(in":[107],"case":[108],"MOSFET)":[110],"which":[111],"better":[113],"sensitivity":[114],"low":[116],"drift.":[117],"Process":[118],"simulations":[119],"were":[120],"performed":[121],"Silvaco":[123],"<sup":[124],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">\u00ae</sup>":[126],"TCAD":[127],"tool.":[128]},"counts_by_year":[{"year":2022,"cited_by_count":2},{"year":2020,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}