{"id":"https://openalex.org/W2065368631","doi":"https://doi.org/10.1109/isvdat.2014.6881090","title":"TID effects on retention of 0.13 μm SONOS memory cell: A device simulation approach","display_name":"TID effects on retention of 0.13 μm SONOS memory cell: A device simulation approach","publication_year":2014,"publication_date":"2014-07-01","ids":{"openalex":"https://openalex.org/W2065368631","doi":"https://doi.org/10.1109/isvdat.2014.6881090","mag":"2065368631"},"language":"en","primary_location":{"id":"doi:10.1109/isvdat.2014.6881090","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isvdat.2014.6881090","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"18th International Symposium on VLSI Design and Test","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5076828675","display_name":"Shipra Bassi","orcid":null},"institutions":[{"id":"https://openalex.org/I9747756","display_name":"Atal Bihari Vajpayee Indian Institute of Information Technology and Management","ror":"https://ror.org/008b3ap06","country_code":"IN","type":"education","lineage":["https://openalex.org/I9747756"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Shipra Bassi","raw_affiliation_strings":["ABV-Indian Institute of Information Technology and Management, Gwalior, India","ABV Indian Inst. of Inf. Technol. & Manage., Gwalior, India"],"affiliations":[{"raw_affiliation_string":"ABV-Indian Institute of Information Technology and Management, Gwalior, India","institution_ids":["https://openalex.org/I9747756"]},{"raw_affiliation_string":"ABV Indian Inst. of Inf. Technol. & Manage., Gwalior, India","institution_ids":["https://openalex.org/I9747756"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5038140573","display_name":"Manisha Pattanaik","orcid":"https://orcid.org/0000-0001-7842-0695"},"institutions":[{"id":"https://openalex.org/I9747756","display_name":"Atal Bihari Vajpayee Indian Institute of Information Technology and Management","ror":"https://ror.org/008b3ap06","country_code":"IN","type":"education","lineage":["https://openalex.org/I9747756"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Manisha Pattanaik","raw_affiliation_strings":["ABV-Indian Institute of Information Technology and Management, Gwalior, India","ABV Indian Inst. of Inf. Technol. & Manage., Gwalior, India"],"affiliations":[{"raw_affiliation_string":"ABV-Indian Institute of Information Technology and Management, Gwalior, India","institution_ids":["https://openalex.org/I9747756"]},{"raw_affiliation_string":"ABV Indian Inst. of Inf. Technol. & Manage., Gwalior, India","institution_ids":["https://openalex.org/I9747756"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5076828675"],"corresponding_institution_ids":["https://openalex.org/I9747756"],"apc_list":null,"apc_paid":null,"fwci":0.4187,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.68356118,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":"47","issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/flash-memory","display_name":"Flash memory","score":0.7267446517944336},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6356397867202759},{"id":"https://openalex.org/keywords/irradiation","display_name":"Irradiation","score":0.6025362610816956},{"id":"https://openalex.org/keywords/absorbed-dose","display_name":"Absorbed dose","score":0.6023407578468323},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5932629704475403},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.4884296953678131},{"id":"https://openalex.org/keywords/trapping","display_name":"Trapping","score":0.4828522801399231},{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.44026055932044983},{"id":"https://openalex.org/keywords/flash","display_name":"Flash (photography)","score":0.43058478832244873},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.41962939500808716},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2332724928855896},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.22952359914779663},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.1755473017692566},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.15932926535606384},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.1413128674030304},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.13406652212142944},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.12791496515274048},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.08445721864700317}],"concepts":[{"id":"https://openalex.org/C2776531357","wikidata":"https://www.wikidata.org/wiki/Q174077","display_name":"Flash memory","level":2,"score":0.7267446517944336},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6356397867202759},{"id":"https://openalex.org/C111337013","wikidata":"https://www.wikidata.org/wiki/Q2737837","display_name":"Irradiation","level":2,"score":0.6025362610816956},{"id":"https://openalex.org/C151337348","wikidata":"https://www.wikidata.org/wiki/Q215313","display_name":"Absorbed dose","level":3,"score":0.6023407578468323},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5932629704475403},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.4884296953678131},{"id":"https://openalex.org/C2777924906","wikidata":"https://www.wikidata.org/wiki/Q34168","display_name":"Trapping","level":2,"score":0.4828522801399231},{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.44026055932044983},{"id":"https://openalex.org/C2777526259","wikidata":"https://www.wikidata.org/wiki/Q221836","display_name":"Flash (photography)","level":2,"score":0.43058478832244873},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.41962939500808716},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2332724928855896},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.22952359914779663},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.1755473017692566},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.15932926535606384},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.1413128674030304},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.13406652212142944},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.12791496515274048},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08445721864700317},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.0},{"id":"https://openalex.org/C18903297","wikidata":"https://www.wikidata.org/wiki/Q7150","display_name":"Ecology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isvdat.2014.6881090","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isvdat.2014.6881090","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"18th International Symposium on VLSI Design and Test","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W2001178328","https://openalex.org/W2020879742","https://openalex.org/W2109557735","https://openalex.org/W2114014164","https://openalex.org/W2114416536","https://openalex.org/W2121141357","https://openalex.org/W2124843111","https://openalex.org/W2126016557","https://openalex.org/W2129399840","https://openalex.org/W2131239138","https://openalex.org/W2132555393","https://openalex.org/W2136263689","https://openalex.org/W2145857748","https://openalex.org/W2150761536","https://openalex.org/W2155344381","https://openalex.org/W6678920139"],"related_works":["https://openalex.org/W2110321764","https://openalex.org/W3040260745","https://openalex.org/W2104937488","https://openalex.org/W2329688742","https://openalex.org/W2106449802","https://openalex.org/W2168060209","https://openalex.org/W2544543223","https://openalex.org/W2036350002","https://openalex.org/W2171862007","https://openalex.org/W2102924097"],"abstract_inverted_index":{"Flash":[0],"memory":[1,42,63],"cells":[2],"used":[3],"in":[4,21,25,83,142,162],"space":[5],"applications":[6],"are":[7,153],"under":[8],"continuous":[9],"impact":[10],"of":[11,38,57,62,70,76,81,115,159],"Total":[12],"Ionizing":[13],"Dose":[14],"(TID)":[15],"effects.":[16],"It":[17,51],"causes":[18],"charge":[19,46,160],"trapping":[20,161],"the":[22,26,34,133,151],"oxide":[23],"and":[24,59,79,109,136],"oxide/substrate":[27],"interface.":[28],"In":[29],"this":[30,137],"work,":[31],"we":[32,96],"investigate":[33],"TID":[35,116,130],"radiation":[36],"response":[37],"0.13\u03bcm":[39],"SONOS":[40],"flash":[41],"cell":[43],"with":[44,65,140,168],"different":[45],"states":[47,61],"upto":[48],"1":[49],"Mrad(Si).":[50],"is":[52,123],"found":[53],"that":[54,121],"threshold":[55],"voltage":[56],"programmed":[58],"virgin":[60],"decreases":[64],"irradiation":[66,128],"due":[67,144],"to":[68,87,103,145],"accumulation":[69,75],"holes.":[71],"For":[72],"erased":[73],"state,":[74],"induced":[77],"holes":[78,82],"loss":[80],"nitride":[84],"layer":[85],"tends":[86],"cancel":[88],"each":[89],"other,":[90],"causing":[91],"no":[92],"significant":[93],"change.":[94],"Further,":[95],"also":[97],"proposed":[98],"a":[99,113],"device":[100,134],"simulation":[101,157],"approach":[102],"test":[104],"data":[105],"retention":[106,122,135],"at":[107],"room":[108],"high":[110],"temperature":[111,143],"as":[112],"function":[114],"irradiations":[117],"received.":[118],"We":[119],"observed":[120],"not":[124],"much":[125],"dependent":[126],"on":[127],"dose.":[129],"exposure":[131],"degrades":[132],"effect":[138],"enhances":[139],"increase":[141],"thermally":[146],"activated":[147],"electron":[148],"detrapping.":[149],"All":[150],"analyses":[152],"accomplished":[154],"using":[155],"physical":[156],"models":[158],"Sentaurus":[163],"TCAD":[164],"suite,":[165],"comparing":[166],"results":[167],"established":[169],"qualitative":[170],"models.":[171]},"counts_by_year":[{"year":2019,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}