{"id":"https://openalex.org/W7133294657","doi":"https://doi.org/10.1109/isscc49663.2026.11408965","title":"19.4 A Digital-Feedback Active-Gate-Driver IC for 600A 1200V SiC MOSFETs Supporting High-and Low-Side Drive with Simultaneous ${\\text{dV}}_{\\text{ds}}$/dt Control and ${\\mathrm{V}}_{\\text{ds}}$ Surge Suppression Enabled by Miller Capacitance Calibration","display_name":"19.4 A Digital-Feedback Active-Gate-Driver IC for 600A 1200V SiC MOSFETs Supporting High-and Low-Side Drive with Simultaneous ${\\text{dV}}_{\\text{ds}}$/dt Control and ${\\mathrm{V}}_{\\text{ds}}$ Surge Suppression Enabled by Miller Capacitance Calibration","publication_year":2026,"publication_date":"2026-02-15","ids":{"openalex":"https://openalex.org/W7133294657","doi":"https://doi.org/10.1109/isscc49663.2026.11408965"},"language":null,"primary_location":{"id":"doi:10.1109/isscc49663.2026.11408965","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc49663.2026.11408965","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2026 IEEE International Solid-State Circuits Conference (ISSCC)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5078039951","display_name":"Shusuke Kawai","orcid":"https://orcid.org/0000-0003-1070-7213"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shusuke Kawai","raw_affiliation_strings":["Toshiba,Kawasaki,Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Toshiba,Kawasaki,Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038510079","display_name":"Kohei Horii","orcid":"https://orcid.org/0009-0004-9506-314X"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kohei Horii","raw_affiliation_strings":["Toshiba,Kawasaki,Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Toshiba,Kawasaki,Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108657209","display_name":"Koutaro Miyazaki","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Koutaro Miyazaki","raw_affiliation_strings":["Toshiba,Kawasaki,Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Toshiba,Kawasaki,Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5127875797","display_name":"Yuto Bushimata","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yuto Bushimata","raw_affiliation_strings":["Toshiba,Kawasaki,Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Toshiba,Kawasaki,Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111938114","display_name":"Satoshi Takaya","orcid":"https://orcid.org/0000-0001-9402-1694"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Satoshi Takaya","raw_affiliation_strings":["Toshiba,Kawasaki,Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Toshiba,Kawasaki,Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5102399355","display_name":"Hiroaki Ishihara","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroaki Ishihara","raw_affiliation_strings":["Toshiba,Kawasaki,Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Toshiba,Kawasaki,Japan","institution_ids":["https://openalex.org/I1292669757"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I1292669757"],"apc_list":null,"apc_paid":null,"fwci":29.2098,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.97769302,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":94,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"326","last_page":"328"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9815000295639038,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9815000295639038,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.002400000113993883,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.002300000051036477,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.6875},{"id":"https://openalex.org/keywords/surge","display_name":"Surge","score":0.6078000068664551},{"id":"https://openalex.org/keywords/calibration","display_name":"Calibration","score":0.5435000061988831},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4471000134944916},{"id":"https://openalex.org/keywords/parasitic-capacitance","display_name":"Parasitic capacitance","score":0.44699999690055847},{"id":"https://openalex.org/keywords/voltage-reference","display_name":"Voltage reference","score":0.3456999957561493}],"concepts":[{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.6875},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6176999807357788},{"id":"https://openalex.org/C154108245","wikidata":"https://www.wikidata.org/wiki/Q287381","display_name":"Surge","level":2,"score":0.6078000068664551},{"id":"https://openalex.org/C165838908","wikidata":"https://www.wikidata.org/wiki/Q736777","display_name":"Calibration","level":2,"score":0.5435000061988831},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5145000219345093},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4471000134944916},{"id":"https://openalex.org/C154318817","wikidata":"https://www.wikidata.org/wiki/Q2157249","display_name":"Parasitic capacitance","level":4,"score":0.44699999690055847},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4458000063896179},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.41830000281333923},{"id":"https://openalex.org/C44351266","wikidata":"https://www.wikidata.org/wiki/Q1465532","display_name":"Voltage reference","level":3,"score":0.3456999957561493},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.33660000562667847},{"id":"https://openalex.org/C2777681924","wikidata":"https://www.wikidata.org/wiki/Q5074262","display_name":"Charge control","level":4,"score":0.31839999556541443},{"id":"https://openalex.org/C158411068","wikidata":"https://www.wikidata.org/wiki/Q2720568","display_name":"Digital control","level":2,"score":0.2985999882221222},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.29159998893737793}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isscc49663.2026.11408965","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc49663.2026.11408965","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2026 IEEE International Solid-State Circuits Conference (ISSCC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.6603407859802246,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W2921395474","https://openalex.org/W3190190161","https://openalex.org/W4321021192","https://openalex.org/W4378843090","https://openalex.org/W4401567739","https://openalex.org/W4409991906","https://openalex.org/W4409992320"],"related_works":[],"abstract_inverted_index":{"A":[0],"digital":[1,35],"feedback":[2,36],"active":[3],"gate":[4],"driver":[5],"IC":[6],"applicable":[7],"to":[8],"both":[9],"high-":[10],"and":[11,19,49,60],"low-side$600":[12],"~\\mathrm{A},":[13],"1200":[14],"~\\mathrm{V}$SiC":[15],"MOSFETs":[16],"is":[17],"proposed":[18],"demonstrated":[20],"on":[21],"the":[22],"high-side.":[23],"High-side":[24],"voltage":[25,48],"sensing":[26],"uses":[27],"a":[28],"parasitic":[29],"Miller":[30],"capacitance":[31],"calibration":[32],"circuit,":[33],"while":[34],"enables":[37],"simultaneous":[38],"turn-on/off$\\text{dV}_{\\text{ds}}":[39],"/":[40,55],"\\text{dt}$control":[41,56],"and$\\mathrm{V}_{\\text{ds}}$surge":[42],"suppression.":[43],"Measurements":[44],"show":[45],"58%":[46],"surge":[47],"66%":[50],"switching":[51],"loss":[52,64],"reduction,":[53],"with$\\text{dV}_{\\text{ds}}":[54],"within":[57],"10%":[58],"error":[59],"an":[61],"additional":[62],"29%":[63],"reduction.":[65]},"counts_by_year":[{"year":2026,"cited_by_count":1}],"updated_date":"2026-08-11T07:18:39.950985","created_date":"2026-03-04T00:00:00"}