{"id":"https://openalex.org/W4392745764","doi":"https://doi.org/10.1109/isscc49657.2024.10454351","title":"3.9 A 1.2V High-Voltage-Tolerant Bootstrapped Analog Sampler in 12-bit SAR ADC Using 3nm GAA\u2019s 0.7V Thin-Gate-Oxide Transistor","display_name":"3.9 A 1.2V High-Voltage-Tolerant Bootstrapped Analog Sampler in 12-bit SAR ADC Using 3nm GAA\u2019s 0.7V Thin-Gate-Oxide Transistor","publication_year":2024,"publication_date":"2024-02-18","ids":{"openalex":"https://openalex.org/W4392745764","doi":"https://doi.org/10.1109/isscc49657.2024.10454351"},"language":"en","primary_location":{"id":"doi:10.1109/isscc49657.2024.10454351","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc49657.2024.10454351","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Solid-State Circuits Conference (ISSCC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"Sangheon Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Sangheon Lee","raw_affiliation_strings":["Samsung Electronics,Hwaseong,Korea","Samsung Electronics, Hwaseong, Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Hwaseong,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwaseong, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100330080","display_name":"Jinwoo Park","orcid":"https://orcid.org/0000-0001-9074-2152"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jinwoo Park","raw_affiliation_strings":["Samsung Electronics,Hwaseong,Korea","Samsung Electronics, Hwaseong, Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Hwaseong,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwaseong, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104161129","display_name":"Junsang Park","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Junsang Park","raw_affiliation_strings":["Samsung Electronics,Hwaseong,Korea","Samsung Electronics, Hwaseong, Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Hwaseong,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwaseong, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090059241","display_name":"Sang\u2010Kyu Lee","orcid":"https://orcid.org/0000-0002-3367-5229"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sangkyu Lee","raw_affiliation_strings":["Samsung Electronics,Hwaseong,Korea","Samsung Electronics, Hwaseong, Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Hwaseong,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwaseong, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100745071","display_name":"Jungho Lee","orcid":"https://orcid.org/0000-0003-4162-3389"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jungho Lee","raw_affiliation_strings":["Samsung Electronics,Hwaseong,Korea","Samsung Electronics, Hwaseong, Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Hwaseong,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwaseong, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049511963","display_name":"Young\u2010Jae Cho","orcid":"https://orcid.org/0000-0001-6943-4462"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Youngjae Cho","raw_affiliation_strings":["Samsung Electronics,Hwaseong,Korea","Samsung Electronics, Hwaseong, Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Hwaseong,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwaseong, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102172743","display_name":"Michael Choi","orcid":"https://orcid.org/0009-0005-1210-3466"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Michael Choi","raw_affiliation_strings":["Samsung Electronics,Hwaseong,Korea","Samsung Electronics, Hwaseong, Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Hwaseong,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwaseong, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5003437929","display_name":"Jongshin Shin","orcid":"https://orcid.org/0000-0002-4912-4974"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jongshin Shin","raw_affiliation_strings":["Samsung Electronics,Hwaseong,Korea","Samsung Electronics, Hwaseong, Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics,Hwaseong,Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics, Hwaseong, Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":0.1779,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.42140146,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"70","last_page":"72"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6048505306243896},{"id":"https://openalex.org/keywords/bit","display_name":"Bit (key)","score":0.5845611691474915},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5371353030204773},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.46088385581970215},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.453369140625},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4190579056739807},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4140487611293793},{"id":"https://openalex.org/keywords/thin-film-transistor","display_name":"Thin-film transistor","score":0.4115182161331177},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.4102019667625427},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4062768518924713},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3981047570705414},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.25405001640319824},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.09026166796684265}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6048505306243896},{"id":"https://openalex.org/C117011727","wikidata":"https://www.wikidata.org/wiki/Q1278488","display_name":"Bit (key)","level":2,"score":0.5845611691474915},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5371353030204773},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.46088385581970215},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.453369140625},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4190579056739807},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4140487611293793},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.4115182161331177},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4102019667625427},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4062768518924713},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3981047570705414},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.25405001640319824},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.09026166796684265},{"id":"https://openalex.org/C38652104","wikidata":"https://www.wikidata.org/wiki/Q3510521","display_name":"Computer security","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isscc49657.2024.10454351","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc49657.2024.10454351","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE International Solid-State Circuits Conference (ISSCC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8500000238418579,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W2099432139","https://openalex.org/W2101004723","https://openalex.org/W2103056669","https://openalex.org/W2552288005","https://openalex.org/W4280503569"],"related_works":["https://openalex.org/W2411923897","https://openalex.org/W4394546135","https://openalex.org/W2532740565","https://openalex.org/W2527471840","https://openalex.org/W4285347720","https://openalex.org/W2049246612","https://openalex.org/W2271044277","https://openalex.org/W4200259850","https://openalex.org/W2333831899","https://openalex.org/W2588941787"],"abstract_inverted_index":{"Recently,":[0],"as":[1,83],"process":[2,10,46,150],"refinement":[3],"continues,":[4],"the":[5,12,37,43,86,93,116,147,157],"latest":[6],"3nm":[7,44,94,148,205],"Gate-All-Around":[8],"(GAA)":[9],"utilizing":[11],"Multi-Bridge-Channel-FET":[13],"(MBCFET)":[14],"with":[15,120,180],"nanosheet":[16],"technology":[17,40],"enhances":[18],"performance,":[19],"power":[20],"efficiency,":[21],"and":[22,31,58,142,190],"area":[23],"(PPA)":[24],"benefits":[25],"by":[26],"large":[27],"effective":[28],"channel":[29],"width":[30],"enhanced":[32],"design":[33],"flexibility":[34],"compared":[35],"to":[36,76,107,135,177],"previous":[38,117],"FinFET":[39,118],"[1].":[41],"However,":[42,97,145],"GAA":[45,95,149,206],"provides":[47,151],"only":[48,105,152],"thin-gate":[49,153],"oxide":[50,63,122,154],"transistors":[51,64,123,155],"for":[52,65,124,156],"a":[53,70,98,125,198,204],"0.7V":[54,87,158,199],"low":[55,88,159],"supply":[56,67,89,127,160],"voltage":[57,90],"does":[59],"not":[60],"offer":[61],"thick-gate":[62,121],"higher":[66,80],"voltages.":[68,114],"Typically,":[69],"general-purpose":[71],"analog-to-digital":[72],"converter":[73],"(ADC)":[74],"needs":[75],"sample":[77,103,136],"inputs":[78,104],"at":[79],"levels,":[81],"such":[82],"1.2V,":[84],"over":[85],"(VDD)":[91],"in":[92,203],"process.":[96],"conventional":[99,129],"bootstrapped":[100,130,168,212],"sampler":[101,169],"can":[102],"up":[106,176],"VDD":[108],"level,":[109],"using":[110,208],"2\u00d7VDD":[111],"internal":[112,182],"node":[113,183],"In":[115],"processes":[119],"1.2V":[126,137,178],"voltage,":[128,161],"samplers":[131],"are":[132],"useful":[133],"enough":[134],"input":[138,174],"without":[139,188],"any":[140],"reliability":[141,189],"leakage":[143,191],"issues.":[144,192],"since":[146],"this":[162,194,209],"paper":[163,195],"introduces":[164],"an":[165],"innovative":[166],"tolerant":[167,211],"architecture":[170],"capable":[171],"of":[172,185],"sampling":[173],"levels":[175],"(1.7\u00d7VDD)":[179],"maximum":[181],"voltages":[184],"1.9V":[186],"(2.7\u00d7VDD)":[187],"Moreover,":[193],"also":[196],"proposes":[197],"12-bit":[200],"SAR":[201],"ADC":[202],"process,":[207],"new":[210],"sampler.":[213]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2026-04-21T08:09:41.155169","created_date":"2025-10-10T00:00:00"}