{"id":"https://openalex.org/W3015213341","doi":"https://doi.org/10.1109/isscc19947.2020.9062967","title":"15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-V<sub>MIN</sub> Applications","display_name":"15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-V<sub>MIN</sub> Applications","publication_year":2020,"publication_date":"2020-02-01","ids":{"openalex":"https://openalex.org/W3015213341","doi":"https://doi.org/10.1109/isscc19947.2020.9062967","mag":"3015213341"},"language":"en","primary_location":{"id":"doi:10.1109/isscc19947.2020.9062967","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc19947.2020.9062967","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Solid- State Circuits Conference - (ISSCC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5081987422","display_name":"Jonathan Chang","orcid":"https://orcid.org/0000-0002-3811-1254"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Jonathan Chang","raw_affiliation_strings":["TSMC, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043405308","display_name":"Yen-Huei Chen","orcid":"https://orcid.org/0000-0002-9254-5256"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yen-Huei Chen","raw_affiliation_strings":["TSMC, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068681413","display_name":"Gary Chan","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Gary Chan","raw_affiliation_strings":["TSMC, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108217349","display_name":"Hank Cheng","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Hank Cheng","raw_affiliation_strings":["TSMC, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039020904","display_name":"Po\u2010Sheng Wang","orcid":"https://orcid.org/0000-0002-5243-4244"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Po-Sheng Wang","raw_affiliation_strings":["TSMC, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103942748","display_name":"Yangsyu Lin","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yangsyu Lin","raw_affiliation_strings":["TSMC, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100989173","display_name":"Hidehiro Fujiwara","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Hidehiro Fujiwara","raw_affiliation_strings":["TSMC, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045536625","display_name":"Robin Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Robin Lee","raw_affiliation_strings":["TSMC, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102320565","display_name":"Hung-Jen Liao","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Hung-Jen Liao","raw_affiliation_strings":["TSMC, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011720028","display_name":"Ping-Wei Wang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Ping-Wei Wang","raw_affiliation_strings":["TSMC, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060239328","display_name":"Geoffrey Yeap","orcid":"https://orcid.org/0000-0002-7767-7656"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Geoffrey Yeap","raw_affiliation_strings":["TSMC, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5074772780","display_name":"Quincy Li","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Quincy Li","raw_affiliation_strings":["TSMC, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"TSMC, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":12,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":3.226,"has_fulltext":false,"cited_by_count":47,"citation_normalized_percentile":{"value":0.92449516,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":94,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"238","last_page":"240"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.8059790134429932},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5660799145698547},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5365090370178223},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5168088674545288},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.43430453538894653},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4082159399986267},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3627103567123413},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3511860966682434},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.33903390169143677},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.29696935415267944},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19700706005096436}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.8059790134429932},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5660799145698547},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5365090370178223},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5168088674545288},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.43430453538894653},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4082159399986267},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3627103567123413},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3511860966682434},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.33903390169143677},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.29696935415267944},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19700706005096436}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isscc19947.2020.9062967","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc19947.2020.9062967","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE International Solid- State Circuits Conference - (ISSCC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.6499999761581421}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1984849261","https://openalex.org/W2008362573","https://openalex.org/W2014357578","https://openalex.org/W2073818373","https://openalex.org/W2148301792","https://openalex.org/W2289536574","https://openalex.org/W2540920206","https://openalex.org/W3005875844","https://openalex.org/W6646651391"],"related_works":["https://openalex.org/W3151633427","https://openalex.org/W2012045996","https://openalex.org/W2212894501","https://openalex.org/W2793465010","https://openalex.org/W3024050170","https://openalex.org/W4293253840","https://openalex.org/W4378977321","https://openalex.org/W2967161359","https://openalex.org/W4241238243","https://openalex.org/W2109445684"],"abstract_inverted_index":{"Despite":[0],"recent":[1],"advances,":[2],"low-voltage":[3],"operation":[4,226],"remains":[5],"one":[6],"of":[7,18,54,77,96,128,193,315,336],"the":[8,15,19,28,42,75,94,135,152,178,184,188,194,202,206,217,257,276,283,302,313,316,333,337,344],"key":[9,218],"approaches":[10],"for":[11,86,168,220],"power":[12],"reduction.":[13],"However,":[14,74,301],"continuous":[16],"scaling":[17,139,181],"SRAM":[20,89,100,136,165,179,195],"bit":[21,101,166,196],"cell,":[22],"in":[23,103,227,263,306],"advanced":[24],"technologies,":[25],"based":[26],"on":[27],"transistor's":[29],"minimum":[30,44],"geometry":[31],"is":[32,216,350],"accompanied":[33],"by":[34],"increased":[35],"random":[36,65],"threshold":[37],"voltage":[38,46,180],"variations":[39],"that":[40],"limit":[41],"SRAM's":[43],"operating":[45],"(V":[47],"<sub":[48,190,208,223,268,279,291],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[49,162,191,209,224,269,280,292],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">MIN</sub>":[50,192,210,270,281],").":[51],"The":[52],"introduction":[53],"FinFET":[55,110,121],"transistors":[56,124,241],"has":[57],"provided":[58],"better":[59],"short":[60],"channel":[61,109],"effects":[62],"and":[63,107,201,238,261,287,324,339],"less":[64],"dopant":[66],"fluctuation,":[67],"compared":[68],"to":[69,81,114,126,145,274,311,331,353],"prior":[70],"bulk":[71],"CMOS":[72],"technology.":[73,111,229],"quantization":[76],"transistor":[78,249],"sizing":[79],"continues":[80,144],"be":[82],"a":[83,97,104,116,129,158,169,233,243,264],"major":[84],"challenge":[85],"high-density":[87,98,164],"6T":[88,99],"design.":[90],"Figure":[91,132,175,230],"15.1.1(a)":[92],"shows":[93,134,177,232],"layout":[95],"cell":[102,167,197,289],"5nm":[105,172,228],"EUV":[106],"high-mobility":[108],"In":[112,272,309],"order":[113,273,310],"achieve":[115],"compact":[117],"bit-cell":[118,137],"area,":[119],"using":[120],"technology,":[122],"all":[123],"have":[125,296],"consist":[127],"single":[130],"fin.":[131],"15.1.1(b)":[133],"area":[138,143,307,314,334],"trend":[140],"since":[141],"2011:":[142],"scale,":[146],"even":[147],"as":[148],"technology":[149,173],"evolved":[150],"into":[151],"sub-20nm":[153],"era.":[154],"This":[155],"work":[156,320],"reports":[157],"0.021":[159],"\u03bcm":[160],"<sup":[161],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[163],"leading":[170],"edge":[171],"[1].":[174],"15.1.2(a)":[176],"trend:":[182],"where":[183],"blue":[185],"line":[186,204],"indicates":[187,205],"V":[189,207,222,267,278,290],"without":[198],"circuit":[199,212],"assist":[200,215,317],"red":[203],"with":[211,326],"assist.":[213],"Write":[214],"enabler":[219],"lowering":[221],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">DD</sub>":[225,293],"15.1.2(b)":[231],"contention":[234,265],"between":[235],"pull-up":[236],"(PU)":[237],"pass-gate":[239],"(PG)":[240],"during":[242],"write":[244,258,266,277],"operation.":[245],"A":[246],"stronger":[247],"PU":[248],"yields":[250],"higher":[251],"read":[252],"stability,":[253],"but":[254],"it":[255],"degrades":[256],"margin":[259],"significantly":[260],"results":[262,305],"issue.":[271],"improve":[275],",":[282],"negative":[284],"BL":[285,346],"(NBL)":[286],"lower":[288],"(LCV)":[294],"techniques":[295],"been":[297],"proposed":[298],"[2],":[299],"[6].":[300],"write-assist":[303],"circuitry":[304],"overhead.":[308],"reduce":[312,332,355],"circuitry,":[318],"this":[319],"proposes":[321],"NBL":[322],"[7]":[323],"LCV":[325,340],"metal":[327],"coupling/charge":[328],"sharing":[329],"capacitors":[330],"overhead":[335],"NBL-boosted":[338],"charge-sharing":[341],"capacitors.":[342],"Furthermore,":[343],"flying":[345],"(FBL)":[347],"architecture":[348],"[8]":[349],"also":[351],"implemented":[352],"further":[354],"area.":[356]},"counts_by_year":[{"year":2025,"cited_by_count":10},{"year":2024,"cited_by_count":6},{"year":2023,"cited_by_count":6},{"year":2022,"cited_by_count":13},{"year":2021,"cited_by_count":10},{"year":2020,"cited_by_count":2}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}