{"id":"https://openalex.org/W2922327071","doi":"https://doi.org/10.1109/isscc.2019.8662538","title":"18.8 A 192pW Hybrid Bandgap-V<inf>th</inf> Reference with Process Dependence Compensated by a Dimension-Induced Side-Effect","display_name":"18.8 A 192pW Hybrid Bandgap-V<inf>th</inf> Reference with Process Dependence Compensated by a Dimension-Induced Side-Effect","publication_year":2019,"publication_date":"2019-02-01","ids":{"openalex":"https://openalex.org/W2922327071","doi":"https://doi.org/10.1109/isscc.2019.8662538","mag":"2922327071"},"language":"en","primary_location":{"id":"doi:10.1109/isscc.2019.8662538","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2019.8662538","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Solid- State Circuits Conference - (ISSCC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102914016","display_name":"Youngwoo Ji","orcid":"https://orcid.org/0000-0002-4319-6619"},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Youngwoo Ji","raw_affiliation_strings":["Pohang University of Science and Technology, Pohang, Korea"],"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology, Pohang, Korea","institution_ids":["https://openalex.org/I123900574"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100745071","display_name":"Jungho Lee","orcid":"https://orcid.org/0000-0003-4162-3389"},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jungho Lee","raw_affiliation_strings":["Pohang University of Science and Technology, Pohang, Korea"],"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology, Pohang, Korea","institution_ids":["https://openalex.org/I123900574"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052722005","display_name":"Byungsub Kim","orcid":"https://orcid.org/0000-0003-1528-6235"},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Byungsub Kim","raw_affiliation_strings":["Pohang University of Science and Technology, Pohang, Korea"],"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology, Pohang, Korea","institution_ids":["https://openalex.org/I123900574"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057208951","display_name":"Hong-June Park","orcid":"https://orcid.org/0000-0001-8144-9165"},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hong-June Park","raw_affiliation_strings":["Pohang University of Science and Technology, Pohang, Korea"],"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology, Pohang, Korea","institution_ids":["https://openalex.org/I123900574"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110455916","display_name":"Jae-Yoon Sim","orcid":null},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jae-Yoon Sim","raw_affiliation_strings":["Pohang University of Science and Technology, Pohang, Korea"],"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology, Pohang, Korea","institution_ids":["https://openalex.org/I123900574"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5102914016"],"corresponding_institution_ids":["https://openalex.org/I123900574"],"apc_list":null,"apc_paid":null,"fwci":1.0925,"has_fulltext":false,"cited_by_count":21,"citation_normalized_percentile":{"value":0.75044878,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"308","last_page":"310"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/bandgap-voltage-reference","display_name":"Bandgap voltage reference","score":0.8470222353935242},{"id":"https://openalex.org/keywords/voltage-reference","display_name":"Voltage reference","score":0.6247624754905701},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5797935724258423},{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.5513043403625488},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.5324315428733826},{"id":"https://openalex.org/keywords/process-corners","display_name":"Process corners","score":0.5205979347229004},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.49174144864082336},{"id":"https://openalex.org/keywords/standby-power","display_name":"Standby power","score":0.4826677143573761},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.461550235748291},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4595107436180115},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4468909502029419},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.4338873028755188},{"id":"https://openalex.org/keywords/process-variation","display_name":"Process variation","score":0.4222496449947357},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3983168601989746},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3897663354873657},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.33273398876190186},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.27141499519348145},{"id":"https://openalex.org/keywords/dropout-voltage","display_name":"Dropout voltage","score":0.21777278184890747},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1408969759941101}],"concepts":[{"id":"https://openalex.org/C127033052","wikidata":"https://www.wikidata.org/wiki/Q48635","display_name":"Bandgap voltage reference","level":5,"score":0.8470222353935242},{"id":"https://openalex.org/C44351266","wikidata":"https://www.wikidata.org/wiki/Q1465532","display_name":"Voltage reference","level":3,"score":0.6247624754905701},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5797935724258423},{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.5513043403625488},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.5324315428733826},{"id":"https://openalex.org/C192615534","wikidata":"https://www.wikidata.org/wiki/Q7247268","display_name":"Process corners","level":3,"score":0.5205979347229004},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.49174144864082336},{"id":"https://openalex.org/C7140552","wikidata":"https://www.wikidata.org/wiki/Q1366402","display_name":"Standby power","level":3,"score":0.4826677143573761},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.461550235748291},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4595107436180115},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4468909502029419},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.4338873028755188},{"id":"https://openalex.org/C93389723","wikidata":"https://www.wikidata.org/wiki/Q7247313","display_name":"Process variation","level":3,"score":0.4222496449947357},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3983168601989746},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3897663354873657},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.33273398876190186},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.27141499519348145},{"id":"https://openalex.org/C15032970","wikidata":"https://www.wikidata.org/wiki/Q851210","display_name":"Dropout voltage","level":4,"score":0.21777278184890747},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1408969759941101},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isscc.2019.8662538","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2019.8662538","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Solid- State Circuits Conference - (ISSCC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.9100000262260437}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W1984863066","https://openalex.org/W2047344047","https://openalex.org/W2527089532","https://openalex.org/W2584442328","https://openalex.org/W2592861018","https://openalex.org/W2744687811"],"related_works":["https://openalex.org/W2078126217","https://openalex.org/W2381696784","https://openalex.org/W2372624045","https://openalex.org/W2382444301","https://openalex.org/W2393887177","https://openalex.org/W2072896344","https://openalex.org/W4390417205","https://openalex.org/W2352004681","https://openalex.org/W2048213020","https://openalex.org/W2110253107"],"abstract_inverted_index":{"A":[0],"voltage":[1,117,149,180,193],"reference":[2,37,135,156],"circuit":[3],"is":[4,194,225],"an":[5,26,159],"essential":[6],"block":[7],"of":[8,32,70,124,146,153,161,205],"a":[9,41,48,67,80,95,115,147,154,184,210,216,221,229],"system":[10],"to":[11,56,187,227],"generate":[12,228],"various":[13],"internal":[14],"voltages.":[15],"Since":[16],"it":[17,24,46,214],"consumes":[18],"static":[19],"power":[20,71,122,132,176],"in":[21,29],"standby":[22],"modes,":[23],"plays":[25],"important":[27],"role":[28],"energy":[30],"management":[31],"battery-limited":[33],"applications.":[34],"The":[35],"bandgap":[36],"(BGR)":[38],"has":[39,172],"been":[40,141],"widely":[42],"used":[43],"approach":[44],"since":[45],"provides":[47],"well-defined":[49],"large":[50,185],"value":[51],"(~1.15V)":[52],"with":[53,110,137],"strong":[54],"immunity":[55],"process,":[57],"supply":[58,116],"and":[59,120,198],"temperature":[60],"changes.":[61],"Recently":[62],"proposed":[63,142,209],"BGR":[64,106],"approaches":[65,136],"achieved":[66,174],"great":[68],"reduction":[69],"consumption":[72,123],"by":[73,151,164,196],"taking":[74],"only":[75],"complementary-to-absolute-temperature":[76],"(CTAT)":[77],"quantity":[78,88],"from":[79,89,114,183],"PN":[81],"junction":[82],"while":[83],"they":[84],"obtained":[85],"proportional-to-absolutetemperature":[86],"(PTAT)":[87],"alternative":[90],"CMOS":[91],"circuits":[92,139],"such":[93],"as":[94],"CTAT":[96],"divider":[97],"[1]":[98],"or":[99],"leakage-based":[100],"two":[101],"diodes":[102],"[2,3].":[103],"However,":[104,144,213],"these":[105],"schemes":[107],"are":[108],"formed":[109],"multiple":[111],"branches":[112],"fed":[113],"above":[118],"1.4V":[119],"require":[121],"order":[125],"larger":[126],"than":[127],"10nW.":[128],"To":[129,201],"further":[130],"reduce":[131,202],"consumption,":[133,177],"threshold-based":[134,155],"CMOS-only":[138],"have":[140],"[4,5].":[143],"generation":[145],"practical":[148],"level":[150],"upscaling":[152],"also":[157],"causes":[158],"amplification":[160],"the":[162,165,178,191,203],"uncertainty":[163],"same":[166],"factor.":[167],"In":[168],"addition,":[169],"though":[170],"[4]":[171],"successfully":[173],"sub-nW":[175],"threshold":[179,192,222],"eventually":[181],"suffers":[182],"sensitivity":[186],"process":[188,197,206],"variation":[189],"because":[190],"affected":[195],"design":[199],"parameters.":[200],"effect":[204],"variation,":[207],"[5]":[208],"PMOS-only":[211],"circuit.":[212],"requires":[215],"different":[217],"body":[218],"biasing":[219],"for":[220],"difference":[223],"that":[224],"needed":[226],"non-zero":[230],"reference.":[231]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":6}],"updated_date":"2026-03-29T08:15:47.926485","created_date":"2025-10-10T00:00:00"}