{"id":"https://openalex.org/W2921498408","doi":"https://doi.org/10.1109/isscc.2019.8662527","title":"15.6 A 10MHz i-Collapse Failure Self-Prognostic GaN Power Converter with T<inf>J</inf>-Independent In-Situ Condition Monitoring and Proactive Temperature Frequency Scaling","display_name":"15.6 A 10MHz i-Collapse Failure Self-Prognostic GaN Power Converter with T<inf>J</inf>-Independent In-Situ Condition Monitoring and Proactive Temperature Frequency Scaling","publication_year":2019,"publication_date":"2019-02-01","ids":{"openalex":"https://openalex.org/W2921498408","doi":"https://doi.org/10.1109/isscc.2019.8662527","mag":"2921498408"},"language":"en","primary_location":{"id":"doi:10.1109/isscc.2019.8662527","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2019.8662527","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Solid- State Circuits Conference - (ISSCC)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5042774606","display_name":"Yingping Chen","orcid":"https://orcid.org/0000-0002-8687-9858"},"institutions":[{"id":"https://openalex.org/I162577319","display_name":"The University of Texas at Dallas","ror":"https://ror.org/049emcs32","country_code":"US","type":"education","lineage":["https://openalex.org/I162577319"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yingping Chen","raw_affiliation_strings":["University of Texas at Dallas, Richardson, TX"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Texas at Dallas, Richardson, TX","institution_ids":["https://openalex.org/I162577319"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5033855567","display_name":"D. Brian","orcid":null},"institutions":[{"id":"https://openalex.org/I162577319","display_name":"The University of Texas at Dallas","ror":"https://ror.org/049emcs32","country_code":"US","type":"education","lineage":["https://openalex.org/I162577319"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. Brian Ma","raw_affiliation_strings":["University of Texas at Dallas, Richardson, TX"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Texas at Dallas, Richardson, TX","institution_ids":["https://openalex.org/I162577319"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I162577319"],"apc_list":null,"apc_paid":null,"fwci":2.3894,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.87863885,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"248","last_page":"250"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.48594987392425537},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.4277260899543762},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.42396312952041626},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.41871896386146545},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.4148483872413635},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4134975075721741},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.41074660420417786},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3786758482456207},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3760337829589844},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.29367780685424805},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17317917943000793},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.1572340428829193}],"concepts":[{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.48594987392425537},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.4277260899543762},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.42396312952041626},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.41871896386146545},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.4148483872413635},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4134975075721741},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.41074660420417786},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3786758482456207},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3760337829589844},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.29367780685424805},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17317917943000793},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.1572340428829193}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isscc.2019.8662527","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2019.8662527","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Solid- State Circuits Conference - (ISSCC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.5099999904632568}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W2162827174","https://openalex.org/W2181911685","https://openalex.org/W2498714239","https://openalex.org/W2584889330","https://openalex.org/W2743322146","https://openalex.org/W2807745431","https://openalex.org/W6742271319"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W4398198689","https://openalex.org/W2354365353","https://openalex.org/W2811287415","https://openalex.org/W1988437325","https://openalex.org/W2354835317","https://openalex.org/W2171140818","https://openalex.org/W2130152888","https://openalex.org/W2003918017","https://openalex.org/W4252544904"],"abstract_inverted_index":{"With":[0],"superior":[1],"figure":[2],"of":[3,62,88,117,144,202],"merits,":[4],"GaN":[5,19,29,56,231],"switchs":[6],"are":[7,35],"highly":[8],"anticipated":[9],"to":[10,229,238,265,280],"replace":[11],"MOSFETs":[12],"in":[13,78,130,151,162],"high-performance":[14],"power":[15,270],"circuits":[16],"[1,2].":[17],"However,":[18,251],"technology":[20,224],"today":[21],"still":[22],"faces":[23,73],"formidable":[24],"reliability":[25],"challenges":[26],"[3].":[27,207],"While":[28],"device":[30,305],"aging":[31,50,204,213],"and":[32,45,51,75,98,133,156,175,197,205,222,271],"failure":[33,52,206],"mechanisms":[34],"not":[36],"as":[37,39,65,102,137,183,283],"well-studied":[38],"silicon":[40,235],"counterparts,":[41],"its":[42],"unique":[43],"structure":[44],"operation":[46],"also":[47],"induce":[48],"new":[49],"problems.":[53],"Use":[54],"a":[55,59,69,86,141,199,234],"switch":[57],"MHin":[58],"buck":[60],"converter":[61],"Fig.":[63],"15.6.1":[64],"an":[66,242],"example.":[67],"As":[68,140],"high-side":[70],"switch,":[71],"it":[72,226],"large-switching-current":[74],"high-input-voltage":[76],"stress":[77,123],"each":[79],"charge":[80,128,138],"phase.":[81],"After":[82],"repetitive":[83],"switching":[84],"actions,":[85],"number":[87],"electron":[89],"carriers":[90],"can":[91],"be":[92],"injected":[93,149],"into":[94],"the":[95,115,131,152,163,170,194,209,254,262,266,275,285,293,296],"AlGaN":[96,154,243],"barrier":[97,155],"buffer":[99,134,157,244],"layers,":[100,135],"known":[101,136,182],"hot-electron":[103,178],"injection.":[104,179],"In":[105],"discharge":[106],"phase,":[107],"MHis":[108],"off,":[109],"but":[110],"MLbecomes":[111],"conductive,":[112],"which":[113],"shorts":[114],"source":[116],"MHto":[118],"ground,":[119],"creating":[120],"high":[121],"VDS":[122],"on":[124,233],"MH.":[125],"This":[126,180],"induces":[127],"traps":[129],"insulator":[132],"trapping.":[139],"joint":[142],"effect":[143,298],"both":[145],"mechanisms,":[146],"trapped":[147],"or":[148,186],"electrons":[150,161],"insulator,":[153],"layers":[158],"repel":[159],"free":[160],"channel":[164,191],"when":[165],"MH":[166],"is":[167,198,215,227,246],"on,":[168],"weakening":[169],"2-dimensional":[171],"electron-gas":[172],"(2DEG)":[173],"layer":[174,245],"further":[176],"elevating":[177,274],"effect,":[181],"current":[184],"collapse":[185],"i-collapse":[187,297],"for":[188],"short,":[189],"degrades":[190],"conductivity,":[192],"increases":[193,253],"on-resistance":[195],"RDS_ON,":[196,302],"major":[200],"cause":[201,214],"GaN-switch":[203],"On":[208],"other":[210],"hand,":[211],"another":[212],"thermal":[216,256],"effect.":[217],"To":[218],"reduce":[219,239],"manufacture":[220],"costs":[221],"improve":[223],"compatibility,":[225],"common":[228],"fabricate":[230],"transistors":[232],"substrate.":[236],"Accordingly,":[237],"lattice":[240],"mismatch,":[241],"often":[247],"inserted":[248],"(Fig.":[249],"15.6.1).":[250],"this":[252],"junction-to-ambient":[255],"resistance":[257],"R\u03b8JA,":[258],"which,":[259],"together":[260],"with":[261,299],"increased":[263],"RDS_ONdue":[264],"i-collapse,":[267],"causes":[268],"higher":[269,301],"heat":[272],"generation,":[273],"junction":[276],"temperature,":[277],"TJ.":[278],"According":[279],"Arrhenius'":[281],"Law,":[282],"TJincreases,":[284],"mean-time-to-failure":[286],"(MTTF)":[287],"drops":[288],"exponentially":[289],"[4].":[290],"Even":[291],"worse,":[292],"elevated":[294],"TJdeteriorates":[295],"even":[300],"significantly":[303],"reducing":[304],"lifetime.":[306]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":4},{"year":2019,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}