{"id":"https://openalex.org/W2791598392","doi":"https://doi.org/10.1109/isscc.2018.8310399","title":"Brain-inspired computing exploiting carbon nanotube FETs and resistive RAM: Hyperdimensional computing case study","display_name":"Brain-inspired computing exploiting carbon nanotube FETs and resistive RAM: Hyperdimensional computing case study","publication_year":2018,"publication_date":"2018-02-01","ids":{"openalex":"https://openalex.org/W2791598392","doi":"https://doi.org/10.1109/isscc.2018.8310399","mag":"2791598392"},"language":"en","primary_location":{"id":"doi:10.1109/isscc.2018.8310399","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2018.8310399","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Solid - State Circuits Conference - (ISSCC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5010513705","display_name":"Tony F. Wu","orcid":"https://orcid.org/0000-0002-2187-0473"},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Tony F. Wu","raw_affiliation_strings":["Stantord University, Stanford, CA"],"affiliations":[{"raw_affiliation_string":"Stantord University, Stanford, CA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009672380","display_name":"Haitong Li","orcid":"https://orcid.org/0000-0003-3393-9252"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Haitong Li","raw_affiliation_strings":["Stantord University, Stanford, CA"],"affiliations":[{"raw_affiliation_string":"Stantord University, Stanford, CA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101615883","display_name":"Ping-Chen Huang","orcid":"https://orcid.org/0000-0002-2021-6381"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Ping-Chen Huang","raw_affiliation_strings":["Stantord University, Stanford, CA"],"affiliations":[{"raw_affiliation_string":"Stantord University, Stanford, CA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050167359","display_name":"Abbas Rahimi","orcid":"https://orcid.org/0000-0003-3141-4970"},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Abbas Rahimi","raw_affiliation_strings":["University of California Berkeley, Berkeley, CA"],"affiliations":[{"raw_affiliation_string":"University of California Berkeley, Berkeley, CA","institution_ids":["https://openalex.org/I95457486"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088933304","display_name":"Jan M. Rabaey","orcid":"https://orcid.org/0000-0001-6290-4855"},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jan M. Rabaey","raw_affiliation_strings":["University of California Berkeley, Berkeley, CA"],"affiliations":[{"raw_affiliation_string":"University of California Berkeley, Berkeley, CA","institution_ids":["https://openalex.org/I95457486"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059975258","display_name":"H.\u2010S. Philip Wong","orcid":"https://orcid.org/0000-0002-0096-1472"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"H.-S. Philip Wong","raw_affiliation_strings":["Stantord University, Stanford, CA"],"affiliations":[{"raw_affiliation_string":"Stantord University, Stanford, CA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061843047","display_name":"Max M. Shulaker","orcid":"https://orcid.org/0000-0003-2237-193X"},"institutions":[{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Max M. Shulaker","raw_affiliation_strings":["Massachusettes Institute of Technology, Cambridge, MA"],"affiliations":[{"raw_affiliation_string":"Massachusettes Institute of Technology, Cambridge, MA","institution_ids":["https://openalex.org/I63966007"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5036312663","display_name":"Subhasish Mitra","orcid":"https://orcid.org/0000-0002-5572-5194"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Subhasish Mitra","raw_affiliation_strings":["Stantord University, Stanford, CA"],"affiliations":[{"raw_affiliation_string":"Stantord University, Stanford, CA","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5010513705"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":10.6872,"has_fulltext":false,"cited_by_count":132,"citation_normalized_percentile":{"value":0.98741623,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":97,"max":100},"biblio":{"volume":null,"issue":null,"first_page":"492","last_page":"494"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.9156426787376404},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6206979751586914},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.46834251284599304},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4472294747829437},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.44238054752349854},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.41687917709350586},{"id":"https://openalex.org/keywords/carbon-nanotube-field-effect-transistor","display_name":"Carbon nanotube field-effect transistor","score":0.41135215759277344},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.39913102984428406},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.35085242986679077},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3368983864784241},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.3320772647857666},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.32470259070396423},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3136065602302551},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.15628790855407715},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14290547370910645}],"concepts":[{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.9156426787376404},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6206979751586914},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.46834251284599304},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4472294747829437},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.44238054752349854},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.41687917709350586},{"id":"https://openalex.org/C58916441","wikidata":"https://www.wikidata.org/wiki/Q1778563","display_name":"Carbon nanotube field-effect transistor","level":5,"score":0.41135215759277344},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.39913102984428406},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.35085242986679077},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3368983864784241},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.3320772647857666},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.32470259070396423},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3136065602302551},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.15628790855407715},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14290547370910645}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isscc.2018.8310399","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2018.8310399","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE International Solid - State Circuits Conference - (ISSCC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320315684","display_name":"Stanford SystemX Alliance","ror":null},{"id":"https://openalex.org/F4320332180","display_name":"Defense Advanced Research Projects Agency","ror":"https://ror.org/02caytj08"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W2004823737","https://openalex.org/W2018127069","https://openalex.org/W2476008461","https://openalex.org/W2511463163","https://openalex.org/W2731422849"],"related_works":["https://openalex.org/W2076211355","https://openalex.org/W2533127403","https://openalex.org/W2007070351","https://openalex.org/W2033811947","https://openalex.org/W2183989414","https://openalex.org/W1551399929","https://openalex.org/W2410132916","https://openalex.org/W989761102","https://openalex.org/W2162174949","https://openalex.org/W2104937488"],"abstract_inverted_index":{"We":[0,102],"demonstrate":[1],"an":[2,35,53],"end-to-end":[3],"brain-inspired":[4],"hyperdimensional":[5],"(HD)":[6],"computing":[7],"nanosystem,":[8],"effective":[9],"for":[10,112],"cognitive":[11],"tasks":[12],"such":[13],"as":[14],"language":[15,165],"recognition,":[16],"using":[17,97,118,175],"heterogeneous":[18],"integration":[19,28,78],"of":[20,29,147,154,203],"multiple":[21],"emerging":[22,36,54],"nanotechnologies.":[23],"It":[24],"uses":[25],"monolithic":[26,76],"3D":[27,77],"carbon":[30],"nanotube":[31],"field-effect":[32],"transistors":[33],"(CNFETs,":[34],"logic":[37],"technology":[38],"with":[39,79,151,207],"significant":[40],"energy-delay":[41],"product":[42],"(EDP)":[43],"benefit":[44],"vs.":[45],"silicon":[46],"CMOS":[47],"[1])":[48],"and":[49,60,72,81,89,94,105,129,139],"Resistive":[50],"RAM":[51],"(RRAM,":[52],"memory":[55],"that":[56,133],"promises":[57],"dense":[58,82],"non-volatile":[59],"analog":[61],"storage":[62,95],"[2]).":[63],"Due":[64],"to":[65,107,125,156],"their":[66],"low":[67],"fabrication":[68],"temperature":[69],"(<;250\u00b0C),":[70],"CNFETs":[71,106,205],"RRAM":[73,104,120,126,138,209],"naturally":[74],"enable":[75],"fine-grained":[80],"vertical":[83],"connections":[84],"(exceeding":[85],"various":[86],"chip":[87],"stacking":[88],"packaging":[90],"approaches)":[91],"between":[92],"computation":[93],"layers":[96],"back-end-of-line":[98],"inter-layer":[99],"vias":[100],"[3].":[101],"exploit":[103],"create":[108],"area-and":[109],"energy-efficient":[110],"circuits":[111,117,132],"HD":[113,200],"computing:":[114],"approximate":[115],"accumulation":[116],"gradual":[119],"reset":[121],"operation":[122,185],"(in":[123],"addition":[124],"single-bit":[127],"storage)":[128],"random":[130],"projection":[131],"embrace":[134],"inherent":[135],"variations":[136],"in":[137],"CNFETs.":[140],"Our":[141,199],"results":[142],"demonstrate:":[143],"1.":[144],"pairwise":[145],"classification":[146],"21":[148],"European":[149],"languages":[150],"measured":[152],"accuracy":[153],"up":[155],"98%":[157],"on":[158],">20,000":[159],"sentences":[160],"(6.4":[161],"million":[162],"characters)":[163,180],"per":[164,181],"pair.":[166],"2.":[167],"One-shot":[168],"learning":[169,171],"(i.e.,":[170],"from":[172],"few":[173],"examples)":[174],"one":[176],"text":[177],"sample":[178],"(~100,000":[179],"language.":[182],"3.":[183],"Resilient":[184],"(98%":[186],"accuracy)":[187],"despite":[188],"78%":[189],"hardware":[190],"errors":[191],"(circuit":[192],"outputs":[193],"stuck":[194],"at":[195],"0":[196],"or":[197],"1).":[198],"nanosystem":[201],"consists":[202],"1,952":[204],"integrated":[206],"224":[208],"cells.":[210]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":7},{"year":2024,"cited_by_count":6},{"year":2023,"cited_by_count":12},{"year":2022,"cited_by_count":24},{"year":2021,"cited_by_count":26},{"year":2020,"cited_by_count":19},{"year":2019,"cited_by_count":21},{"year":2018,"cited_by_count":16}],"updated_date":"2026-03-12T08:34:05.389933","created_date":"2025-10-10T00:00:00"}