{"id":"https://openalex.org/W2594689197","doi":"https://doi.org/10.1109/isscc.2017.7870429","title":"23.6 A 0.6V 4.266Gb/s/pin LPDDR4X interface with auto-DQS cleaning and write-VWM training for memory controller","display_name":"23.6 A 0.6V 4.266Gb/s/pin LPDDR4X interface with auto-DQS cleaning and write-VWM training for memory controller","publication_year":2017,"publication_date":"2017-02-01","ids":{"openalex":"https://openalex.org/W2594689197","doi":"https://doi.org/10.1109/isscc.2017.7870429","mag":"2594689197"},"language":"en","primary_location":{"id":"doi:10.1109/isscc.2017.7870429","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2017.7870429","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE International Solid-State Circuits Conference (ISSCC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5011189346","display_name":"Soo-Min Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Soo-Min Lee","raw_affiliation_strings":["Samsung Electronics, Hwasung, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003466525","display_name":"Jihun Oh","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jihun Oh","raw_affiliation_strings":["Samsung Electronics, Hwasung, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100912071","display_name":"Jin-Ho Choi","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jinho Choi","raw_affiliation_strings":["Samsung Electronics, Hwasung, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100992645","display_name":"Seokkyun Ko","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seokkyun Ko","raw_affiliation_strings":["Samsung Electronics, Hwasung, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056441376","display_name":"Daero Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Daero Kim","raw_affiliation_strings":["Samsung Electronics, Hwasung, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014877708","display_name":"Kyoung\u2010Hoi Koo","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyounghoi Koo","raw_affiliation_strings":["Samsung Electronics, Hwasung, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079964576","display_name":"Jongryun Choi","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jongryun Choi","raw_affiliation_strings":["Samsung Electronics, Hwasung, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051125167","display_name":"Yoonjee Nam","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yoonjee Nam","raw_affiliation_strings":["Samsung Electronics, Hwasung, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101727465","display_name":"Sangsoo Park","orcid":"https://orcid.org/0000-0002-9617-6312"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sangsoo Park","raw_affiliation_strings":["Samsung Electronics, Hwasung, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043834456","display_name":"Hyungkweon Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyungkweon Lee","raw_affiliation_strings":["Samsung Electronics, Hwasung, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101789747","display_name":"Eun\u2010Su Kim","orcid":"https://orcid.org/0000-0002-4043-0713"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Eunsu Kim","raw_affiliation_strings":["Samsung Electronics, Hwasung, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017949012","display_name":"Sukhyun Jung","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sukhyun Jung","raw_affiliation_strings":["Samsung Electronics, Hwasung, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002513974","display_name":"Kwanyeob Chae","orcid":"https://orcid.org/0000-0002-1771-593X"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kwanyeob Chae","raw_affiliation_strings":["Samsung Electronics, Hwasung, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101761898","display_name":"Suho Kim","orcid":"https://orcid.org/0000-0001-8668-5036"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Suho Kim","raw_affiliation_strings":["Samsung Electronics, Hwasung, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071946773","display_name":"Sanghune Park","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sanghune Park","raw_affiliation_strings":["Samsung Electronics, Hwasung, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100460359","display_name":"Sang Hyun Lee","orcid":"https://orcid.org/0000-0002-2246-7440"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sanghyun Lee","raw_affiliation_strings":["Samsung Electronics, Hwasung, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100406372","display_name":"Sungho Park","orcid":"https://orcid.org/0000-0001-7416-1059"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sungho Park","raw_affiliation_strings":["Samsung Electronics, Hwasung, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":17,"corresponding_author_ids":["https://openalex.org/A5011189346"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":2.4843,"has_fulltext":false,"cited_by_count":25,"citation_normalized_percentile":{"value":0.89754024,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"398","last_page":"399"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11417","display_name":"Advancements in PLL and VCO Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11417","display_name":"Advancements in PLL and VCO Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.8887470960617065},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4798414409160614},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.4672508239746094},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4603654146194458},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.44658759236335754},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.36681056022644043},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.27859556674957275},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24329867959022522},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.16083413362503052}],"concepts":[{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.8887470960617065},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4798414409160614},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.4672508239746094},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4603654146194458},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.44658759236335754},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.36681056022644043},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.27859556674957275},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24329867959022522},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.16083413362503052}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isscc.2017.7870429","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2017.7870429","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE International Solid-State Circuits Conference (ISSCC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.5}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W2023225805","https://openalex.org/W2081250279","https://openalex.org/W2099195220","https://openalex.org/W2106266283","https://openalex.org/W6670864944","https://openalex.org/W6675045894"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W2104615293","https://openalex.org/W1557535892","https://openalex.org/W2006330903","https://openalex.org/W1577267070","https://openalex.org/W1643664280","https://openalex.org/W2365537356","https://openalex.org/W2160490486","https://openalex.org/W2139358663","https://openalex.org/W2095798024"],"abstract_inverted_index":{"Although":[0],"the":[1,19,28,63,65,78,86,93,115,119,124,128,150,169,187,199,217,230,236,249,259],"LPDDR4":[2,21,44,226],"interface":[3],"has":[4,56,194],"enabled":[5],"industry":[6],"requirements,":[7],"such":[8],"as":[9,47,156],"low":[10,51,103],"power":[11,32,52,79,89,133],"consumption":[12],"and":[13,53,72,166,235,242,268],"high":[14],"bandwidth,":[15,37],"additional":[16],"evolution":[17],"of":[18,118,171,202,219,239],"current":[20],"performance":[22],"is":[23,90,138,147,191,258],"expected.":[24],"To":[25],"respond":[26],"to":[27,46,84,91,127,154,196,216,247,274],"need":[29],"for":[30,68,149,168,198],"more":[31],"efficient":[33,82],"devices":[34],"with":[35,49],"higher":[36],"a":[38,172,220],"2":[39],"<sup":[40],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[41,98,141,145,176,211],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">nd</sup>":[42],"generation":[43],"(referred":[45],"LPDDR4X),":[48],"extreme":[50],"extended":[54],"performance,":[55],"been":[57],"developed":[58],"in":[59,186,225,272],"this":[60,111,160],"work.":[61],"In":[62,159],"controller,":[64],"output":[66,87,204],"drivers":[67],"data":[69,73],"signal":[70,75],"(DQ)":[71],"strobe":[74],"(DQS)":[76],"dominate":[77],"consumption.":[80],"An":[81],"method":[83],"reduce":[85,92],"driver":[88],"supply":[94,134],"voltage":[95,232],"(V":[96],"<sub":[97,140,144,175,210],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">DDQ</sub>":[99,146,177],")":[100,213],"[1].":[101],"A":[102],"voltage-swing":[104],"terminated":[105],"logic":[106],"(LVSTL)":[107],"[2]":[108],"can":[109],"support":[110],"solution":[112],"by":[113],"changing":[114],"operation":[116],"region":[117,126],"pull-up":[120,151],"NMOS":[121,152],"transistor":[122,153],"from":[123,207],"saturation":[125],"triode":[129],"region.":[130],"However,":[131],"another":[132],"whose":[135],"minimum":[136],"value":[137],"V":[139,174],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">TH_NMOS</sub>":[142],"+V":[143],"required":[148],"serve":[155],"source-series":[157],"termination.":[158],"work,":[161],"P-over-N":[162],"topology":[163],"replaces":[164],"LVSTL":[165],"allows":[167],"use":[170],"single":[173],"(0.6V),":[178],"thus":[179],"reducing":[180],"pre-driver":[181],"power.":[182],"Another":[183],"major":[184],"improvement":[185],"proposed":[188],"LPDDR4X":[189],"controller":[190],"that":[192],"it":[193],"functions":[195],"compensate":[197],"large":[200],"variation":[201],"DQS":[203,243,270],"transition":[205],"time":[206,260],"CK":[208],"(\u0394t":[209],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">DQSCK</sub>":[212],"[3]":[214],"due":[215],"lack":[218],"delay":[221],"locked":[222],"loop":[223],"(DLL)":[224],"DRAM":[227,234],"[4].":[228],"Furthermore,":[229],"reference":[231],"on":[233],"duty":[237],"cycle":[238],"both":[240],"DQ":[241],"are":[244],"initially":[245],"calibrated":[246],"increase":[248],"valid":[250,266],"window":[251],"margin":[252],"(VWM)":[253],"during":[254],"write":[255],"operations.":[256],"VWM":[257],"interval":[261],"where":[262],"all":[263],"DQs":[264,276],"remain":[265],"before":[267],"after":[269],"edge":[271],"order":[273],"capture":[275],"correctly.":[277]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":2},{"year":2020,"cited_by_count":5},{"year":2019,"cited_by_count":6},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":4}],"updated_date":"2026-05-03T08:25:01.440150","created_date":"2025-10-10T00:00:00"}