{"id":"https://openalex.org/W2592861018","doi":"https://doi.org/10.1109/isscc.2017.7870280","title":"5.8 A 9.3nW all-in-one bandgap voltage and current reference circuit","display_name":"5.8 A 9.3nW all-in-one bandgap voltage and current reference circuit","publication_year":2017,"publication_date":"2017-02-01","ids":{"openalex":"https://openalex.org/W2592861018","doi":"https://doi.org/10.1109/isscc.2017.7870280","mag":"2592861018"},"language":"en","primary_location":{"id":"doi:10.1109/isscc.2017.7870280","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2017.7870280","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE International Solid-State Circuits Conference (ISSCC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102914016","display_name":"Youngwoo Ji","orcid":"https://orcid.org/0000-0002-4319-6619"},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Youngwoo Ji","raw_affiliation_strings":["Pohang University of Science and Technology, Pohang, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology, Pohang, Korea","institution_ids":["https://openalex.org/I123900574"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019176379","display_name":"Cheonhoo Jeon","orcid":"https://orcid.org/0000-0002-4747-978X"},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Cheonhoo Jeon","raw_affiliation_strings":["Pohang University of Science and Technology, Pohang, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology, Pohang, Korea","institution_ids":["https://openalex.org/I123900574"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027088400","display_name":"Hyunwoo Son","orcid":"https://orcid.org/0000-0002-9833-1718"},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyunwoo Son","raw_affiliation_strings":["Pohang University of Science and Technology, Pohang, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology, Pohang, Korea","institution_ids":["https://openalex.org/I123900574"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052722005","display_name":"Byungsub Kim","orcid":"https://orcid.org/0000-0003-1528-6235"},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Byungsub Kim","raw_affiliation_strings":["Pohang University of Science and Technology, Pohang, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology, Pohang, Korea","institution_ids":["https://openalex.org/I123900574"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057208951","display_name":"Hong-June Park","orcid":"https://orcid.org/0000-0001-8144-9165"},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hong-June Park","raw_affiliation_strings":["Pohang University of Science and Technology, Pohang, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology, Pohang, Korea","institution_ids":["https://openalex.org/I123900574"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110455916","display_name":"Jae-Yoon Sim","orcid":null},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jae-Yoon Sim","raw_affiliation_strings":["Pohang University of Science and Technology, Pohang, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology, Pohang, Korea","institution_ids":["https://openalex.org/I123900574"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5102914016"],"corresponding_institution_ids":["https://openalex.org/I123900574"],"apc_list":null,"apc_paid":null,"fwci":6.8221,"has_fulltext":false,"cited_by_count":119,"citation_normalized_percentile":{"value":0.97594775,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":98,"max":100},"biblio":{"volume":null,"issue":null,"first_page":"100","last_page":"101"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/bandgap-voltage-reference","display_name":"Bandgap voltage reference","score":0.8803175687789917},{"id":"https://openalex.org/keywords/voltage-reference","display_name":"Voltage reference","score":0.6671406626701355},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.6251400113105774},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.6226222515106201},{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.6137150526046753},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5781553983688354},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5615599751472473},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5335044860839844},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.46242231130599976},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4497527778148651},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4414754807949066},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.32324618101119995},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.28226804733276367},{"id":"https://openalex.org/keywords/dropout-voltage","display_name":"Dropout voltage","score":0.16437622904777527}],"concepts":[{"id":"https://openalex.org/C127033052","wikidata":"https://www.wikidata.org/wiki/Q48635","display_name":"Bandgap voltage reference","level":5,"score":0.8803175687789917},{"id":"https://openalex.org/C44351266","wikidata":"https://www.wikidata.org/wiki/Q1465532","display_name":"Voltage reference","level":3,"score":0.6671406626701355},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.6251400113105774},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.6226222515106201},{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.6137150526046753},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5781553983688354},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5615599751472473},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5335044860839844},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.46242231130599976},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4497527778148651},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4414754807949066},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.32324618101119995},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.28226804733276367},{"id":"https://openalex.org/C15032970","wikidata":"https://www.wikidata.org/wiki/Q851210","display_name":"Dropout voltage","level":4,"score":0.16437622904777527}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isscc.2017.7870280","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2017.7870280","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE International Solid-State Circuits Conference (ISSCC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8299999833106995}],"awards":[],"funders":[{"id":"https://openalex.org/F4320322091","display_name":"Korea Institute of Science and Technology","ror":"https://ror.org/05kzfa883"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1982288276","https://openalex.org/W2047344047","https://openalex.org/W2094860990","https://openalex.org/W2123617179","https://openalex.org/W2146031070"],"related_works":["https://openalex.org/W2370820504","https://openalex.org/W2133199116","https://openalex.org/W2347289947","https://openalex.org/W2159904735","https://openalex.org/W2364640622","https://openalex.org/W2390376289","https://openalex.org/W2372270451","https://openalex.org/W2107074037","https://openalex.org/W1970992322","https://openalex.org/W2542178378"],"abstract_inverted_index":{"Ultra-low-power":[0],"(ULP)":[1],"sensor":[2],"technologies":[3],"for":[4,125,143],"the":[5,42,83,86,158,162,183],"future":[6],"internet":[7],"of":[8,16,23,191,238,253,260],"things":[9],"have":[10,66,179],"presented":[11],"challenges":[12],"in":[13,34,101,161,197,218],"ULP":[14,107,144,181],"implementation":[15],"reference":[17,28,88,116,152,177],"circuits":[18,65,178],"while":[19,242],"keeping":[20],"traditional":[21],"requirements":[22],"stable":[24,104,134],"performance.":[25],"For":[26],"voltage":[27,214,233,246],"circuits,":[29],"as":[30],"an":[31],"essential":[32],"block":[33],"SoCs":[35],"to":[36,60,93,112,118,156,200],"generate":[37],"various":[38],"internal":[39,95],"supply":[40],"voltages,":[41],"bandgap":[43],"voltage-reference":[44],"(BGVR)":[45],"scheme":[46],"has":[47],"been":[48,67],"widely":[49],"used":[50],"since":[51],"it":[52,129,137],"provides":[53],"a":[54,71,76,114,120,132,149,189,206,227,235],"well-defined":[55,133],"value":[56],"with":[57,122,226,257],"strong":[58],"immunity":[59],"process/voltage/temperature":[61],"variations.":[62,202],"Nanowatt-consuming":[63],"BGVR":[64,121],"recently":[68],"proposed":[69],"using":[70],"capacitor":[72],"network":[73],"[4]":[74],"and":[75,106,172,193,215,231,234,240,247,255,262],"leakage-based":[77],"proportional-to-absolute-temperature":[78],"(PTAT)":[79],"circuit":[80,89,153,210,223],"[5].":[81],"On":[82],"other":[84],"hand,":[85],"current":[87,97,115,135,151,164,184,216,236,248],"that":[90,154,211],"is":[91,117,148,185,224],"required":[92],"set":[94],"bias":[96],"still":[98,186],"presents":[99,205],"difficulties":[100],"achieving":[102],"both":[103,213],"performance":[105],"consumption.":[108,145],"The":[109,221,245],"general":[110],"approach":[111,147],"building":[113],"use":[119],"additional":[123],"resistors":[124],"V-to-I":[126],"conversion.":[127],"Though":[128],"can":[130],"provide":[131],"reference,":[136],"also":[138],"requires":[139],"excessively":[140],"large":[141,198],"resistance":[142],"Another":[146],"CMOS-based":[150],"tries":[155],"make":[157],"exponential":[159],"term":[160],"subthreshold":[163],"equation":[165],"constant":[166],"or":[167],"temperature-independent,":[168],"hence":[169],"reducing":[170],"process":[171,192,201,230],"temperature":[173,258],"dependencies.":[174],"While":[175],"CMOS":[176,229],"achieved":[180],"implementations,":[182],"determined":[187],"by":[188],"number":[190],"design":[194],"parameters,":[195],"resulting":[196],"sensitivity":[199],"This":[203],"paper":[204],"sub-10nW":[207],"bandgap-reference":[208],"(BGR)":[209],"implements":[212],"references":[217,237,249],"one":[219],"circuit.":[220],"BGR":[222],"implemented":[225],"0.18\u00b5m":[228],"generates":[232],"1.238V":[239],"6.64nA":[241],"consuming":[243],"9.3nW.":[244],"show":[250],"standard":[251],"deviations":[252],"0.43%":[254],"1.19%":[256],"coefficients":[259],"26ppm/\u00b0C":[261],"283ppm/\u00b0C,":[263],"respectively.":[264]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":12},{"year":2024,"cited_by_count":16},{"year":2023,"cited_by_count":10},{"year":2022,"cited_by_count":15},{"year":2021,"cited_by_count":12},{"year":2020,"cited_by_count":19},{"year":2019,"cited_by_count":11},{"year":2018,"cited_by_count":13},{"year":2017,"cited_by_count":9}],"updated_date":"2026-05-05T08:41:31.759640","created_date":"2025-10-10T00:00:00"}