{"id":"https://openalex.org/W2292825696","doi":"https://doi.org/10.1109/isscc.2016.7418027","title":"16.8 A 3-to-40V 10-to-30MHz automotive-use GaN driver with active BST balancing and VSW dual-edge dead-time modulation achieving 8.3% efficiency improvement and 3.4ns constant propagation delay","display_name":"16.8 A 3-to-40V 10-to-30MHz automotive-use GaN driver with active BST balancing and VSW dual-edge dead-time modulation achieving 8.3% efficiency improvement and 3.4ns constant propagation delay","publication_year":2016,"publication_date":"2016-01-01","ids":{"openalex":"https://openalex.org/W2292825696","doi":"https://doi.org/10.1109/isscc.2016.7418027","mag":"2292825696"},"language":"en","primary_location":{"id":"doi:10.1109/isscc.2016.7418027","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2016.7418027","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 IEEE International Solid-State Circuits Conference (ISSCC)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5067932359","display_name":"Xugang Ke","orcid":null},"institutions":[{"id":"https://openalex.org/I162577319","display_name":"The University of Texas at Dallas","ror":"https://ror.org/049emcs32","country_code":"US","type":"education","lineage":["https://openalex.org/I162577319"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Xugang Ke","raw_affiliation_strings":["University of Texas at Dallas, Richardson, TX"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Texas at Dallas, Richardson, TX","institution_ids":["https://openalex.org/I162577319"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059488333","display_name":"Joseph Sankman","orcid":null},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Joseph Sankman","raw_affiliation_strings":["Texas Instruments, Dallas, TX"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Texas Instruments, Dallas, TX","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100737200","display_name":"Min Kyu Song","orcid":"https://orcid.org/0000-0001-9521-0438"},"institutions":[{"id":"https://openalex.org/I162577319","display_name":"The University of Texas at Dallas","ror":"https://ror.org/049emcs32","country_code":"US","type":"education","lineage":["https://openalex.org/I162577319"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Min Kyu Song","raw_affiliation_strings":["University of Texas at Dallas, Richardson, TX"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Texas at Dallas, Richardson, TX","institution_ids":["https://openalex.org/I162577319"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033633554","display_name":"Pooya Forghani","orcid":null},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Pooya Forghani","raw_affiliation_strings":["Texas Instruments, Dallas, TX"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Texas Instruments, Dallas, TX","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5033855567","display_name":"D. Brian","orcid":null},"institutions":[{"id":"https://openalex.org/I162577319","display_name":"The University of Texas at Dallas","ror":"https://ror.org/049emcs32","country_code":"US","type":"education","lineage":["https://openalex.org/I162577319"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Dongsheng Brian Ma","raw_affiliation_strings":["University of Texas at Dallas, Richardson, TX"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Texas at Dallas, Richardson, TX","institution_ids":["https://openalex.org/I162577319"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":21.0015,"has_fulltext":false,"cited_by_count":72,"citation_normalized_percentile":{"value":0.9979623,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":100},"biblio":{"volume":null,"issue":null,"first_page":"302","last_page":"304"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/automotive-industry","display_name":"Automotive industry","score":0.695141613483429},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.591931939125061},{"id":"https://openalex.org/keywords/automotive-electronics","display_name":"Automotive electronics","score":0.5323795676231384},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4957457482814789},{"id":"https://openalex.org/keywords/converters","display_name":"Converters","score":0.4808293581008911},{"id":"https://openalex.org/keywords/automotive-engineering","display_name":"Automotive engineering","score":0.47582104802131653},{"id":"https://openalex.org/keywords/electronics","display_name":"Electronics","score":0.4388121962547302},{"id":"https://openalex.org/keywords/battery","display_name":"Battery (electricity)","score":0.4137195646762848},{"id":"https://openalex.org/keywords/power-electronics","display_name":"Power electronics","score":0.4118536114692688},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.39547544717788696},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.3837883472442627},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.37460410594940186},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21150699257850647},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.18274205923080444},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10737743973731995},{"id":"https://openalex.org/keywords/aerospace-engineering","display_name":"Aerospace engineering","score":0.1031976044178009}],"concepts":[{"id":"https://openalex.org/C526921623","wikidata":"https://www.wikidata.org/wiki/Q190117","display_name":"Automotive industry","level":2,"score":0.695141613483429},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.591931939125061},{"id":"https://openalex.org/C2778520156","wikidata":"https://www.wikidata.org/wiki/Q449343","display_name":"Automotive electronics","level":3,"score":0.5323795676231384},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4957457482814789},{"id":"https://openalex.org/C2778422915","wikidata":"https://www.wikidata.org/wiki/Q10302051","display_name":"Converters","level":3,"score":0.4808293581008911},{"id":"https://openalex.org/C171146098","wikidata":"https://www.wikidata.org/wiki/Q124192","display_name":"Automotive engineering","level":1,"score":0.47582104802131653},{"id":"https://openalex.org/C138331895","wikidata":"https://www.wikidata.org/wiki/Q11650","display_name":"Electronics","level":2,"score":0.4388121962547302},{"id":"https://openalex.org/C555008776","wikidata":"https://www.wikidata.org/wiki/Q267298","display_name":"Battery (electricity)","level":3,"score":0.4137195646762848},{"id":"https://openalex.org/C178911571","wikidata":"https://www.wikidata.org/wiki/Q593143","display_name":"Power electronics","level":3,"score":0.4118536114692688},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.39547544717788696},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.3837883472442627},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.37460410594940186},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21150699257850647},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.18274205923080444},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10737743973731995},{"id":"https://openalex.org/C146978453","wikidata":"https://www.wikidata.org/wiki/Q3798668","display_name":"Aerospace engineering","level":1,"score":0.1031976044178009},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isscc.2016.7418027","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2016.7418027","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 IEEE International Solid-State Circuits Conference (ISSCC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8100000023841858,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W2030998644","https://openalex.org/W2085827389","https://openalex.org/W2163430163","https://openalex.org/W2547108611"],"related_works":["https://openalex.org/W2102122489","https://openalex.org/W2899383815","https://openalex.org/W3209490697","https://openalex.org/W2626179717","https://openalex.org/W1733030679","https://openalex.org/W2371970260","https://openalex.org/W2492373545","https://openalex.org/W2228554074","https://openalex.org/W1995990341","https://openalex.org/W1512084270"],"abstract_inverted_index":{"The":[0],"growing":[1,65],"demand":[2],"for":[3],"both":[4],"reliability":[5],"and":[6,23,36,74,93,118,131],"performance":[7],"in":[8,69,84,98,115],"automotive":[9],"electronics":[10,26,68],"has":[11],"placed":[12],"mounting":[13],"pressure":[14],"on":[15],"silicon-based":[16],"power":[17,48,108],"converters":[18],"to":[19,43,54,89,100,111,126],"be":[20],"increasingly":[21],"reliable":[22],"efficient.":[24],"Automotive":[25],"operate":[27],"from":[28,41],"the":[29,52,56,64,128],"car":[30],"battery":[31],"(VIN)":[32],"which":[33],"experiences":[34],"cold-cranks":[35],"load":[37],"dumps":[38],"that":[39],"range":[40],"3V":[42],"40V":[44],"[1].":[45],"This":[46],"requires":[47],"converters,":[49],"supplied":[50],"by":[51],"battery,":[53],"withstand":[55],"harsh":[57],"operating":[58],"conditions.":[59],"Compounding":[60],"these":[61,86],"challenges":[62],"is":[63],"number":[66],"of":[67],"cars,":[70],"despite":[71],"fixed":[72],"volume":[73],"thermal":[75],"budgets.":[76],"Gallium":[77],"Nitride":[78],"(GaN)":[79],"FETs":[80],"have":[81],"demonstrated":[82],"merits":[83],"alleviating":[85],"challenges,":[87],"due":[88,110],"smaller":[90],"input/output":[91],"capacitance":[92],"near-zero":[94],"reverse":[95],"recovery":[96],"current":[97],"comparison":[99],"silicon":[101],"FETs.":[102],"These":[103],"attributes":[104],"facilitate":[105],"highly":[106],"efficient":[107],"conversion":[109],"a":[112],"\u00d710":[113],"reduction":[114],"switching":[116,122],"losses,":[117],"thus":[119],"enable":[120],"high":[121],"frequency":[123],"(fSW)":[124],"operation":[125],"reduce":[127],"PCB":[129],"footprint":[130],"lower":[132],"cost.":[133]},"counts_by_year":[{"year":2026,"cited_by_count":3},{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":5},{"year":2022,"cited_by_count":10},{"year":2021,"cited_by_count":10},{"year":2020,"cited_by_count":7},{"year":2019,"cited_by_count":16},{"year":2018,"cited_by_count":7},{"year":2017,"cited_by_count":5},{"year":2016,"cited_by_count":1}],"updated_date":"2026-08-08T07:41:36.138363","created_date":"2025-10-10T00:00:00"}