{"id":"https://openalex.org/W1998246226","doi":"https://doi.org/10.1109/isscc.2015.7063027","title":"14.7 In-situ techniques for in-field sensing of NBTI degradation in an SRAM register file","display_name":"14.7 In-situ techniques for in-field sensing of NBTI degradation in an SRAM register file","publication_year":2015,"publication_date":"2015-02-01","ids":{"openalex":"https://openalex.org/W1998246226","doi":"https://doi.org/10.1109/isscc.2015.7063027","mag":"1998246226"},"language":"en","primary_location":{"id":"doi:10.1109/isscc.2015.7063027","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2015.7063027","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103094370","display_name":"Teng Yang","orcid":"https://orcid.org/0000-0002-9277-143X"},"institutions":[{"id":"https://openalex.org/I78577930","display_name":"Columbia University","ror":"https://ror.org/00hj8s172","country_code":"US","type":"education","lineage":["https://openalex.org/I78577930"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Teng Yang","raw_affiliation_strings":["Columbia University, New York, NY","Columbia University, New York, NY;"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Columbia University, New York, NY","institution_ids":["https://openalex.org/I78577930"]},{"raw_affiliation_string":"Columbia University, New York, NY;","institution_ids":["https://openalex.org/I78577930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100723397","display_name":"Doyun Kim","orcid":"https://orcid.org/0000-0002-5976-457X"},"institutions":[{"id":"https://openalex.org/I78577930","display_name":"Columbia University","ror":"https://ror.org/00hj8s172","country_code":"US","type":"education","lineage":["https://openalex.org/I78577930"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Doyun Kim","raw_affiliation_strings":["Columbia University, New York, NY","Columbia University, New York, NY;"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Columbia University, New York, NY","institution_ids":["https://openalex.org/I78577930"]},{"raw_affiliation_string":"Columbia University, New York, NY;","institution_ids":["https://openalex.org/I78577930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049341354","display_name":"Peter R. Kinget","orcid":"https://orcid.org/0000-0002-5707-6394"},"institutions":[{"id":"https://openalex.org/I78577930","display_name":"Columbia University","ror":"https://ror.org/00hj8s172","country_code":"US","type":"education","lineage":["https://openalex.org/I78577930"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Peter R. Kinget","raw_affiliation_strings":["Columbia University, New York, NY","Columbia University, New York, NY;"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Columbia University, New York, NY","institution_ids":["https://openalex.org/I78577930"]},{"raw_affiliation_string":"Columbia University, New York, NY;","institution_ids":["https://openalex.org/I78577930"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5011887658","display_name":"Mingoo Seok","orcid":"https://orcid.org/0000-0002-9722-0979"},"institutions":[{"id":"https://openalex.org/I78577930","display_name":"Columbia University","ror":"https://ror.org/00hj8s172","country_code":"US","type":"education","lineage":["https://openalex.org/I78577930"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mingoo Seok","raw_affiliation_strings":["Columbia University, New York, NY","Columbia University, New York, NY;"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Columbia University, New York, NY","institution_ids":["https://openalex.org/I78577930"]},{"raw_affiliation_string":"Columbia University, New York, NY;","institution_ids":["https://openalex.org/I78577930"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I78577930"],"apc_list":null,"apc_paid":null,"fwci":5.3529,"has_fulltext":false,"cited_by_count":23,"citation_normalized_percentile":{"value":0.97007608,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"3"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.778808057308197},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7494053840637207},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.7452501058578491},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.7378484010696411},{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.6871610879898071},{"id":"https://openalex.org/keywords/register-file","display_name":"Register file","score":0.5837992429733276},{"id":"https://openalex.org/keywords/skew","display_name":"Skew","score":0.543500542640686},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5355878472328186},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.36489778757095337},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.34390464425086975},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2801588177680969},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.2723838984966278},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.242399662733078},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.21625161170959473},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17236045002937317},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.16887366771697998},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.07697615027427673}],"concepts":[{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.778808057308197},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7494053840637207},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.7452501058578491},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.7378484010696411},{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.6871610879898071},{"id":"https://openalex.org/C117280010","wikidata":"https://www.wikidata.org/wiki/Q180944","display_name":"Register file","level":3,"score":0.5837992429733276},{"id":"https://openalex.org/C43711488","wikidata":"https://www.wikidata.org/wiki/Q7534783","display_name":"Skew","level":2,"score":0.543500542640686},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5355878472328186},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.36489778757095337},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.34390464425086975},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2801588177680969},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.2723838984966278},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.242399662733078},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.21625161170959473},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17236045002937317},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.16887366771697998},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.07697615027427673},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C202491316","wikidata":"https://www.wikidata.org/wiki/Q272683","display_name":"Instruction set","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isscc.2015.7063027","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2015.7063027","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6100000143051147,"display_name":"Life in Land","id":"https://metadata.un.org/sdg/15"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W1970023301","https://openalex.org/W1984863066","https://openalex.org/W2007609366","https://openalex.org/W2048216333","https://openalex.org/W2113115586","https://openalex.org/W2125347149"],"related_works":["https://openalex.org/W1999919743","https://openalex.org/W2081382200","https://openalex.org/W2100282217","https://openalex.org/W4398784231","https://openalex.org/W2157278395","https://openalex.org/W4388836178","https://openalex.org/W2031972468","https://openalex.org/W2096191509","https://openalex.org/W2164047446","https://openalex.org/W1510452813"],"abstract_inverted_index":{"SRAM":[0],"register":[1],"files":[2],"have":[3],"sensitive":[4],"circuitry":[5],"and":[6,13,58,72,101,122,152,170],"often":[7],"operate":[8,60],"with":[9],"high":[10,15],"switching":[11],"activity":[12],"at":[14],"temperature.":[16],"This":[17,75],"makes":[18],"them":[19],"particularly":[20,191],"vulnerable":[21],"to":[22,38,63,66,117,123,139,147,166,187],"aging":[23,41],"by":[24],"negative-bias":[25],"temperature":[26,71],"instability":[27],"(NBTI)":[28],"degradation":[29],"of":[30,53,104],"their":[31,119],"PMOS":[32],"devices.":[33],"We":[34],"propose":[35],"a":[36,115,178],"technique":[37,47,76],"sense":[39,67,167],"this":[40],"degradation;":[42,106,130],"it":[43,184],"is":[44,177,185],"an":[45],"in-situ":[46,158],"sensing":[48,89,108],"the":[49,64,99,102,125,134,149,155],"threshold":[50],"voltage":[51,73,128],"(Vt)":[52],"PMOSs":[54,113,151],"directly":[55],"in":[56,114],"bitcells,":[57],"can":[59,77,144],"in-field,":[61],"thanks":[62],"ability":[65],"V,":[68,90,109],"robustly":[69],"across":[70,137],"variations.":[74],"be":[78,145],"foundational":[79],"for":[80,97,181],"several":[81,95],"dynamic":[82],"reliability":[83,169],"management":[84],"(DRM)":[85],"approaches,":[86],"including:":[87],"1)":[88],"values":[91],"periodically":[92],"(e.g.,":[93],"every":[94],"months)":[96],"evaluating":[98],"amount":[100],"rate":[103],"NBTI":[105],"2)":[107],"differences":[110],"between":[111],"two":[112],"bitcell":[116,168],"determine":[118],"strength":[120],"skew":[121,135],"estimate":[124],"minimum":[126],"functional":[127],"(VMIN)":[129],"and,":[131],"3)":[132],"using":[133,160],"information":[136],"bitcells":[138],"create":[140],"recovery":[141],"vectors,":[142],"which":[143,176],"used":[146],"recover":[148],"aged":[150],"thereby":[153],"rebalance":[154],"skews.":[156],"Existing":[157],"techniques":[159],"ring":[161],"oscillators":[162],"or":[163],"current":[164],"sensors":[165],"performance":[171],"cannot":[172],"support":[173],"in-field":[174],"operation,":[175],"critical":[179],"issue":[180],"DRM":[182],"since":[183],"impractical":[186],"control":[188],"environmental":[189],"parameters,":[190],"temperature,":[192],"during":[193],"sensing.":[194]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":5},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":5},{"year":2015,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}