{"id":"https://openalex.org/W2022512492","doi":"https://doi.org/10.1109/isscc.2014.6757429","title":"15.2 A 0.012mm&lt;sup&gt;2&lt;/sup&gt; 3.1mW bang-bang digital fractional-N PLL with a power-supply-noise cancellation technique and a walking-one-phase-selection fractional frequency divider","display_name":"15.2 A 0.012mm&lt;sup&gt;2&lt;/sup&gt; 3.1mW bang-bang digital fractional-N PLL with a power-supply-noise cancellation technique and a walking-one-phase-selection fractional frequency divider","publication_year":2014,"publication_date":"2014-02-01","ids":{"openalex":"https://openalex.org/W2022512492","doi":"https://doi.org/10.1109/isscc.2014.6757429","mag":"2022512492"},"language":"en","primary_location":{"id":"doi:10.1109/isscc.2014.6757429","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2014.6757429","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5070191836","display_name":"Jenlung Liu","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jenlung Liu","raw_affiliation_strings":["Samsung Electronics, Yongin, Korea","Samsung Electron., Yongin, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Yongin, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Yongin, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011801401","display_name":"Taekwang Jang","orcid":"https://orcid.org/0000-0002-4651-0677"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Tae-Kwang Jang","raw_affiliation_strings":["Samsung Electronics, Yongin, Korea","Samsung Electron., Yongin, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Yongin, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Yongin, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004049599","display_name":"Yonghee Lee","orcid":"https://orcid.org/0000-0002-6665-4651"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yonghee Lee","raw_affiliation_strings":["Samsung Electronics, Yongin, Korea","Samsung Electron., Yongin, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Yongin, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Yongin, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027795684","display_name":"Jungeun Shin","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jungeun Shin","raw_affiliation_strings":["Samsung Electronics, Yongin, Korea","Samsung Electron., Yongin, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Yongin, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Yongin, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100399231","display_name":"Seunghoon Lee","orcid":"https://orcid.org/0000-0002-6966-7335"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seunghoon Lee","raw_affiliation_strings":["Samsung Electronics, Yongin, Korea","Samsung Electron., Yongin, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Yongin, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Yongin, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058392128","display_name":"Tae-Ik Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Taeik Kim","raw_affiliation_strings":["Samsung Electronics, Yongin, Korea","Samsung Electron., Yongin, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Yongin, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Yongin, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103247483","display_name":"Jaejin Park","orcid":"https://orcid.org/0009-0000-1919-3306"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jaejin Park","raw_affiliation_strings":["Samsung Electronics, Yongin, Korea","Samsung Electron., Yongin, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Yongin, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Yongin, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101850552","display_name":"Hojin Park","orcid":"https://orcid.org/0000-0001-5581-6427"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hojin Park","raw_affiliation_strings":["Samsung Electronics, Yongin, Korea","Samsung Electron., Yongin, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Yongin, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electron., Yongin, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":36,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"268","last_page":"269"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11417","display_name":"Advancements in PLL and VCO Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11417","display_name":"Advancements in PLL and VCO Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9926999807357788,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9896000027656555,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/phase-locked-loop","display_name":"Phase-locked loop","score":0.8096782565116882},{"id":"https://openalex.org/keywords/phase-noise","display_name":"Phase noise","score":0.6632236242294312},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5927676558494568},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5293736457824707},{"id":"https://openalex.org/keywords/phase-frequency-detector","display_name":"Phase frequency detector","score":0.4643564224243164},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4513229727745056},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.419355571269989},{"id":"https://openalex.org/keywords/phase-detector","display_name":"Phase detector","score":0.4160703122615814},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.4079996347427368},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3576069474220276},{"id":"https://openalex.org/keywords/charge-pump","display_name":"Charge pump","score":0.19073271751403809},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.11426219344139099}],"concepts":[{"id":"https://openalex.org/C12707504","wikidata":"https://www.wikidata.org/wiki/Q52637","display_name":"Phase-locked loop","level":3,"score":0.8096782565116882},{"id":"https://openalex.org/C89631360","wikidata":"https://www.wikidata.org/wiki/Q1428766","display_name":"Phase noise","level":2,"score":0.6632236242294312},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5927676558494568},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5293736457824707},{"id":"https://openalex.org/C2776158855","wikidata":"https://www.wikidata.org/wiki/Q2085341","display_name":"Phase frequency detector","level":5,"score":0.4643564224243164},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4513229727745056},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.419355571269989},{"id":"https://openalex.org/C110086884","wikidata":"https://www.wikidata.org/wiki/Q2085341","display_name":"Phase detector","level":3,"score":0.4160703122615814},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.4079996347427368},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3576069474220276},{"id":"https://openalex.org/C114825011","wikidata":"https://www.wikidata.org/wiki/Q440704","display_name":"Charge pump","level":4,"score":0.19073271751403809},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.11426219344139099}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isscc.2014.6757429","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2014.6757429","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8899999856948853}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1996295125","https://openalex.org/W2030871918","https://openalex.org/W2057579915","https://openalex.org/W2069385386","https://openalex.org/W2084208879","https://openalex.org/W2108458508","https://openalex.org/W2111679634","https://openalex.org/W2127624169","https://openalex.org/W6649317460"],"related_works":["https://openalex.org/W4385624389","https://openalex.org/W4381745543","https://openalex.org/W2295601265","https://openalex.org/W2148370333","https://openalex.org/W2979324006","https://openalex.org/W2054263477","https://openalex.org/W2544336511","https://openalex.org/W2187168840","https://openalex.org/W2103790907","https://openalex.org/W2096085680"],"abstract_inverted_index":{"Digital":[0],"phase-locked":[1],"loops":[2],"(DPLLs)":[3],"[1-7]":[4],"have":[5],"received":[6],"considerable":[7],"attention":[8],"recently":[9],"due":[10],"to":[11,42,49,54,85,88,103],"their":[12,25],"compatibility":[13],"with":[14,120],"advanced":[15],"CMOS":[16],"technology.":[17],"However,":[18],"there":[19],"are":[20],"two":[21],"critical":[22],"factors":[23],"hindering":[24],"uptake":[26],"in":[27],"SoC":[28],"products.":[29],"One":[30],"factor":[31,72],"is":[32,39,48,73,99],"that":[33],"a":[34,74,100,116],"digitally":[35],"controlled":[36],"oscillator":[37],"(DCO)":[38],"highly":[40],"sensitive":[41],"supply":[43],"noise.":[44],"A":[45,94,110],"common":[46],"solution":[47],"apply":[50],"voltage":[51,90],"regulation":[52],"or":[53,68],"adopt":[55],"digital":[56],"calibration":[57],"[2]":[58],"at":[59],"the":[60,104],"cost":[61],"of":[62],"larger":[63],"area,":[64],"higher":[65],"power":[66],"consumption":[67],"both.":[69],"The":[70],"other":[71],"power-hungry":[75],"time-to-digital":[76],"converter":[77],"(TDC),":[78],"which":[79],"typically":[80],"requires":[81],"complex":[82],"auxiliary":[83],"circuitry":[84],"overcome":[86],"sensitivity":[87],"process,":[89],"and":[91],"temperature":[92],"[3].":[93],"bang-bang":[95],"phase/frequency":[96],"detector":[97],"(BBPFD)":[98],"good":[101],"alternative":[102],"TDC":[105],"for":[106],"low-power":[107],"small-size":[108],"applications.":[109],"fractional-N":[111],"implementation,":[112],"however,":[113],"still":[114],"demands":[115],"fractional":[117],"frequency":[118],"divider":[119],"high":[121],"design":[122],"complexity":[123],"[5].":[124]},"counts_by_year":[{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":2},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":6},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":5},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":4},{"year":2015,"cited_by_count":4}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}
