{"id":"https://openalex.org/W1965287694","doi":"https://doi.org/10.1109/isscc.2013.6487753","title":"A 64Mb SRAM in 22nm SOI technology featuring fine-granularity power gating and low-energy power-supply-partition techniques for 37% leakage reduction","display_name":"A 64Mb SRAM in 22nm SOI technology featuring fine-granularity power gating and low-energy power-supply-partition techniques for 37% leakage reduction","publication_year":2013,"publication_date":"2013-02-01","ids":{"openalex":"https://openalex.org/W1965287694","doi":"https://doi.org/10.1109/isscc.2013.6487753","mag":"1965287694"},"language":"en","primary_location":{"id":"doi:10.1109/isscc.2013.6487753","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2013.6487753","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5071792287","display_name":"Harold Pilo","orcid":"https://orcid.org/0009-0002-6782-965X"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4210134083","display_name":"Essex Westford School District","ror":"https://ror.org/03ze2q110","country_code":"US","type":"education","lineage":["https://openalex.org/I4210134083"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H. Pilo","raw_affiliation_strings":["IBM, Essex Junction, VT, USA","IBM, Essex Junction, VT, USA#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I4210134083"]},{"raw_affiliation_string":"IBM, Essex Junction, VT, USA#TAB#","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112860687","display_name":"C. A. Adams","orcid":null},"institutions":[{"id":"https://openalex.org/I5388228","display_name":"University of Rochester","ror":"https://ror.org/022kthw22","country_code":"US","type":"education","lineage":["https://openalex.org/I5388228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C. A. Adams","raw_affiliation_strings":["IBM, Rochester, MN, USA","IBM Rochester MN USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM, Rochester, MN, USA","institution_ids":[]},{"raw_affiliation_string":"IBM Rochester MN USA","institution_ids":["https://openalex.org/I5388228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039528959","display_name":"Igor Arsovski","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4210134083","display_name":"Essex Westford School District","ror":"https://ror.org/03ze2q110","country_code":"US","type":"education","lineage":["https://openalex.org/I4210134083"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"I. Arsovski","raw_affiliation_strings":["IBM, Essex Junction, VT, USA","IBM, Essex Junction, VT, USA#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I4210134083"]},{"raw_affiliation_string":"IBM, Essex Junction, VT, USA#TAB#","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036762140","display_name":"R. Houle","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4210134083","display_name":"Essex Westford School District","ror":"https://ror.org/03ze2q110","country_code":"US","type":"education","lineage":["https://openalex.org/I4210134083"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. M. Houle","raw_affiliation_strings":["IBM, Essex Junction, VT, USA","IBM, Essex Junction, VT, USA#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I4210134083"]},{"raw_affiliation_string":"IBM, Essex Junction, VT, USA#TAB#","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108419347","display_name":"S. Lamphier","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4210134083","display_name":"Essex Westford School District","ror":"https://ror.org/03ze2q110","country_code":"US","type":"education","lineage":["https://openalex.org/I4210134083"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. M. Lamphier","raw_affiliation_strings":["IBM, Essex Junction, VT, USA","IBM, Essex Junction, VT, USA#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I4210134083"]},{"raw_affiliation_string":"IBM, Essex Junction, VT, USA#TAB#","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080704099","display_name":"M. M. Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4210134083","display_name":"Essex Westford School District","ror":"https://ror.org/03ze2q110","country_code":"US","type":"education","lineage":["https://openalex.org/I4210134083"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. M. Lee","raw_affiliation_strings":["IBM, Essex Junction, VT, USA","IBM, Essex Junction, VT, USA#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I4210134083"]},{"raw_affiliation_string":"IBM, Essex Junction, VT, USA#TAB#","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005698023","display_name":"Frank Pavlik","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4210134083","display_name":"Essex Westford School District","ror":"https://ror.org/03ze2q110","country_code":"US","type":"education","lineage":["https://openalex.org/I4210134083"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"F. M. Pavlik","raw_affiliation_strings":["IBM, Essex Junction, VT, USA","IBM, Essex Junction, VT, USA#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I4210134083"]},{"raw_affiliation_string":"IBM, Essex Junction, VT, USA#TAB#","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078466269","display_name":"S. N. Sambatur","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4210129961","display_name":"IBM (India)","ror":"https://ror.org/034ahpr11","country_code":"IN","type":"company","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210129961"]}],"countries":["IN","US"],"is_corresponding":false,"raw_author_name":"S. N. Sambatur","raw_affiliation_strings":["IBM, Bangalore, India","[IBM, Bangalore, India]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM, Bangalore, India","institution_ids":["https://openalex.org/I4210129961"]},{"raw_affiliation_string":"[IBM, Bangalore, India]","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068659636","display_name":"Adnan Seferagic","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4210134083","display_name":"Essex Westford School District","ror":"https://ror.org/03ze2q110","country_code":"US","type":"education","lineage":["https://openalex.org/I4210134083"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A. Seferagic","raw_affiliation_strings":["IBM, Essex Junction, VT, USA","IBM, Essex Junction, VT, USA#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I4210134083"]},{"raw_affiliation_string":"IBM, Essex Junction, VT, USA#TAB#","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101950479","display_name":"Ryan Wu","orcid":"https://orcid.org/0009-0005-1419-3768"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4210134083","display_name":"Essex Westford School District","ror":"https://ror.org/03ze2q110","country_code":"US","type":"education","lineage":["https://openalex.org/I4210134083"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Wu","raw_affiliation_strings":["IBM, Essex Junction, VT, USA","IBM, Essex Junction, VT, USA#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I4210134083"]},{"raw_affiliation_string":"IBM, Essex Junction, VT, USA#TAB#","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111811177","display_name":"M. I. Younus","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. I. Younus","raw_affiliation_strings":["IBM, Hopewell Junction, NY, USA","IBM Hopewell Junction,NY,USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM, Hopewell Junction, NY, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Hopewell Junction,NY,USA","institution_ids":["https://openalex.org/I1341412227"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":7.7006,"has_fulltext":false,"cited_by_count":32,"citation_normalized_percentile":{"value":0.9829414,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"322","last_page":"323"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/power-gating","display_name":"Power gating","score":0.9045894145965576},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7488840818405151},{"id":"https://openalex.org/keywords/leakage-power","display_name":"Leakage power","score":0.6347149014472961},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.6141411066055298},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5366266369819641},{"id":"https://openalex.org/keywords/granularity","display_name":"Granularity","score":0.5356722474098206},{"id":"https://openalex.org/keywords/low-power-electronics","display_name":"Low-power electronics","score":0.5064059495925903},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.45177099108695984},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4308738112449646},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.42340636253356934},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.41548120975494385},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.38275569677352905},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.3822074234485626},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.36770254373550415},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.35048022866249084},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2347981035709381},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.2261696755886078},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.11537981033325195},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08981683850288391},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.08269241452217102},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.08138924837112427}],"concepts":[{"id":"https://openalex.org/C2780700455","wikidata":"https://www.wikidata.org/wiki/Q7236515","display_name":"Power gating","level":4,"score":0.9045894145965576},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7488840818405151},{"id":"https://openalex.org/C2987719587","wikidata":"https://www.wikidata.org/wiki/Q1811428","display_name":"Leakage power","level":4,"score":0.6347149014472961},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.6141411066055298},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5366266369819641},{"id":"https://openalex.org/C177774035","wikidata":"https://www.wikidata.org/wiki/Q1246948","display_name":"Granularity","level":2,"score":0.5356722474098206},{"id":"https://openalex.org/C117551214","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Low-power electronics","level":4,"score":0.5064059495925903},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.45177099108695984},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4308738112449646},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.42340636253356934},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.41548120975494385},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.38275569677352905},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.3822074234485626},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.36770254373550415},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.35048022866249084},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2347981035709381},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.2261696755886078},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.11537981033325195},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08981683850288391},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.08269241452217102},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.08138924837112427},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isscc.2013.6487753","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2013.6487753","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8999999761581421,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W2001044025","https://openalex.org/W2014494940","https://openalex.org/W2065541568","https://openalex.org/W2096046678","https://openalex.org/W2126898248","https://openalex.org/W2165720303","https://openalex.org/W4244763807"],"related_works":["https://openalex.org/W2297319780","https://openalex.org/W2178217057","https://openalex.org/W1972800815","https://openalex.org/W3092470009","https://openalex.org/W2004834197","https://openalex.org/W2404323568","https://openalex.org/W1965287694","https://openalex.org/W4255392205","https://openalex.org/W3005731895","https://openalex.org/W2143954265"],"abstract_inverted_index":{"A":[0],"64Mb":[1],"SRAM":[2,24,53,68,82],"is":[3,70,116],"fabricated":[4],"in":[5,29,45,148],"a":[6,56,84,90,127,137,151],"22nm":[7],"high-performance":[8],"SOI":[9],"technology":[10],"[1].":[11],"The":[12,81],"ever-increasing":[13],"integration":[14],"needs":[15],"of":[16,23,39,59],"complex":[17],"SoC":[18,62],"are":[19],"driving":[20],"the":[21,33,60,122,155],"reduction":[22,104],"leakage":[25,36,54,73,98,103,115],"power":[26,37],"and":[27,35,74],"increase":[28],"memory":[30,50],"density.":[31,80],"While":[32],"area":[34],"benefits":[38],"eDRAM":[40],"continue":[41],"to":[42,95,108,154],"be":[43],"leveraged":[44],"applications":[46],"with":[47,89,126,150],"large":[48],"contiguous":[49],"blocks":[51],"[2],":[52],"remains":[55],"significant":[57],"portion":[58],"total":[61],"power.":[63,157],"This":[64,141],"work":[65],"describes":[66],"an":[67,145],"that":[69,131],"optimized":[71],"for":[72],"performance":[75,149],"as":[76],"top":[77],"priorities":[78],"over":[79],"features":[83],"new":[85],"bitcell":[86],"(BC)":[87],"implemented":[88],"fine-granularity":[91],"power-gating":[92,110],"(FGPG)":[93],"technique":[94],"reduce":[96],"BC":[97],"by":[99,105,119],"37%.":[100],"FGPG":[101],"improves":[102],"2\u00d7":[106],"compared":[107],"bank-based":[109],"(PG)":[111],"techniques":[112],"[3-4].":[113],"Periphery":[114],"also":[117],"reduced":[118],"40%":[120],"from":[121],"previous":[123],"design":[124,130],"[5]":[125],"low-energy":[128],"power-supply-partition":[129],"leverages":[132],"higher":[133,138],"Vtdevices":[134],"operating":[135],"at":[136],"supply":[139],"voltage.":[140],"scheme":[142],"alone":[143],"provides":[144],"8%":[146],"improvement":[147],"small":[152],"compromise":[153],"AC":[156]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":4},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":4},{"year":2015,"cited_by_count":6},{"year":2014,"cited_by_count":8},{"year":2013,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}