{"id":"https://openalex.org/W4248825930","doi":"https://doi.org/10.1109/isscc.2011.5746416","title":"A 1.6V 1.4Gb/s/pin consumer DRAM with self-dynamic voltage-scaling technique in 44nm CMOS technology","display_name":"A 1.6V 1.4Gb/s/pin consumer DRAM with self-dynamic voltage-scaling technique in 44nm CMOS technology","publication_year":2011,"publication_date":"2011-02-01","ids":{"openalex":"https://openalex.org/W4248825930","doi":"https://doi.org/10.1109/isscc.2011.5746416"},"language":"en","primary_location":{"id":"doi:10.1109/isscc.2011.5746416","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2011.5746416","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE International Solid-State Circuits Conference","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100334306","display_name":"Hyun-Woo Lee","orcid":"https://orcid.org/0000-0001-5687-2877"},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Hyun-Woo Lee","raw_affiliation_strings":["Hynix Semiconductor Company Limited, Icheon, South Korea","Korea University, Seoul, South Korea"],"affiliations":[{"raw_affiliation_string":"Hynix Semiconductor Company Limited, Icheon, South Korea","institution_ids":[]},{"raw_affiliation_string":"Korea University, Seoul, South Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052521177","display_name":"Ki-Han Kim","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Ki-Han Kim","raw_affiliation_strings":["Hynix Semiconductor Company Limited, Icheon, South Korea"],"affiliations":[{"raw_affiliation_string":"Hynix Semiconductor Company Limited, Icheon, South Korea","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040054014","display_name":"Young-Kyoung Choi","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Young-Kyoung Choi","raw_affiliation_strings":["Hynix Semiconductor Company Limited, Icheon, South Korea"],"affiliations":[{"raw_affiliation_string":"Hynix Semiconductor Company Limited, Icheon, South Korea","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032592416","display_name":"Ju-Hwan Shon","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Ju-Hwan Shon","raw_affiliation_strings":["Hynix Semiconductor Company Limited, Icheon, South Korea"],"affiliations":[{"raw_affiliation_string":"Hynix Semiconductor Company Limited, Icheon, South Korea","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037433777","display_name":"Nak-Kyu Park","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Nak-Kyu Park","raw_affiliation_strings":["Hynix Semiconductor Company Limited, Icheon, South Korea"],"affiliations":[{"raw_affiliation_string":"Hynix Semiconductor Company Limited, Icheon, South Korea","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088184288","display_name":"Kwan-Weon Kim","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kwan-Weon Kim","raw_affiliation_strings":["Hynix Semiconductor Company Limited, Icheon, South Korea"],"affiliations":[{"raw_affiliation_string":"Hynix Semiconductor Company Limited, Icheon, South Korea","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100777100","display_name":"Chulwoo Kim","orcid":"https://orcid.org/0000-0003-4379-7905"},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Chulwoo Kim","raw_affiliation_strings":["Korea University, Seoul, South Korea"],"affiliations":[{"raw_affiliation_string":"Korea University, Seoul, South Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031072628","display_name":"Young-Jung Choi","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Young-Jung Choi","raw_affiliation_strings":["Hynix Semiconductor Company Limited, Icheon, South Korea"],"affiliations":[{"raw_affiliation_string":"Hynix Semiconductor Company Limited, Icheon, South Korea","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5037950533","display_name":"Byong-Tae Chung","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Byong-Tae Chung","raw_affiliation_strings":["Hynix Semiconductor Company Limited, Icheon, South Korea"],"affiliations":[{"raw_affiliation_string":"Hynix Semiconductor Company Limited, Icheon, South Korea","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5100334306"],"corresponding_institution_ids":["https://openalex.org/I197347611"],"apc_list":null,"apc_paid":null,"fwci":0.7949,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.78120121,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"502","last_page":"504"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.9384760856628418},{"id":"https://openalex.org/keywords/skew","display_name":"Skew","score":0.7602710723876953},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6343086361885071},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.6273890733718872},{"id":"https://openalex.org/keywords/cas-latency","display_name":"CAS latency","score":0.6012712121009827},{"id":"https://openalex.org/keywords/dynamic-voltage-scaling","display_name":"Dynamic voltage scaling","score":0.5990140438079834},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.5521270632743835},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5497673749923706},{"id":"https://openalex.org/keywords/dynamic-random-access-memory","display_name":"Dynamic random-access memory","score":0.5235997438430786},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.49828076362609863},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.4966920018196106},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.38676005601882935},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.3210754990577698},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2827637195587158},{"id":"https://openalex.org/keywords/memory-controller","display_name":"Memory controller","score":0.15714657306671143},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.12240082025527954},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.06348511576652527},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.062127113342285156}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.9384760856628418},{"id":"https://openalex.org/C43711488","wikidata":"https://www.wikidata.org/wiki/Q7534783","display_name":"Skew","level":2,"score":0.7602710723876953},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6343086361885071},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.6273890733718872},{"id":"https://openalex.org/C189930140","wikidata":"https://www.wikidata.org/wiki/Q1112878","display_name":"CAS latency","level":4,"score":0.6012712121009827},{"id":"https://openalex.org/C2776047111","wikidata":"https://www.wikidata.org/wiki/Q632037","display_name":"Dynamic voltage scaling","level":3,"score":0.5990140438079834},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.5521270632743835},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5497673749923706},{"id":"https://openalex.org/C118702147","wikidata":"https://www.wikidata.org/wiki/Q189396","display_name":"Dynamic random-access memory","level":3,"score":0.5235997438430786},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.49828076362609863},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.4966920018196106},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.38676005601882935},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.3210754990577698},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2827637195587158},{"id":"https://openalex.org/C100800780","wikidata":"https://www.wikidata.org/wiki/Q1175867","display_name":"Memory controller","level":3,"score":0.15714657306671143},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.12240082025527954},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.06348511576652527},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.062127113342285156},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isscc.2011.5746416","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2011.5746416","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE International Solid-State Circuits Conference","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8199999928474426,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1978346157","https://openalex.org/W2072448041","https://openalex.org/W2092075230","https://openalex.org/W6644616491","https://openalex.org/W6673541384"],"related_works":["https://openalex.org/W4386903460","https://openalex.org/W2536264121","https://openalex.org/W2338545698","https://openalex.org/W2083934844","https://openalex.org/W2900372418","https://openalex.org/W2181692804","https://openalex.org/W4221167253","https://openalex.org/W4382618825","https://openalex.org/W2516517078","https://openalex.org/W2924367614"],"abstract_inverted_index":{"This":[0],"paper":[1],"introduces":[2],"the":[3,15,19,26,43,48],"first":[4],"ever":[5],"dynamic":[6],"voltage":[7,32],"scaling":[8,33],"(DVS)":[9],"technique":[10,40],"for":[11,25],"DRAM":[12],"considering":[13],"both":[14],"process":[16],"skew":[17],"and":[18,46],"operating":[20],"frequency":[21],"which":[22],"is":[23,36],"adopted":[24],"consumer":[27],"DDR2":[28],"SDRAM.":[29],"The":[30],"self-dynamic":[31],"(SDVS)":[34],"itself":[35],"a":[37],"very":[38],"powerful":[39],"to":[41],"stretch":[42],"battery":[44],"life":[45],"increase":[47],"reliability":[49],"of":[50],"DRAM.":[51]},"counts_by_year":[{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}