{"id":"https://openalex.org/W2035934766","doi":"https://doi.org/10.1109/isscc.2010.5433916","title":"A 45nm 1Gb 1.8V phase-change memory","display_name":"A 45nm 1Gb 1.8V phase-change memory","publication_year":2010,"publication_date":"2010-02-01","ids":{"openalex":"https://openalex.org/W2035934766","doi":"https://doi.org/10.1109/isscc.2010.5433916","mag":"2035934766"},"language":"en","primary_location":{"id":"doi:10.1109/isscc.2010.5433916","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2010.5433916","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2010 IEEE International Solid-State Circuits Conference - (ISSCC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5043961350","display_name":"Corrado Villa","orcid":null},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Corrado Villa","raw_affiliation_strings":["Numonyx, Anrate Brianza, Italy","[Numonyx, Agrate-Brianza, Italy]"],"affiliations":[{"raw_affiliation_string":"Numonyx, Anrate Brianza, Italy","institution_ids":[]},{"raw_affiliation_string":"[Numonyx, Agrate-Brianza, Italy]","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084130482","display_name":"D. Mills","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Duane Mills","raw_affiliation_strings":["Numonyx Folsom, CA","[Numonyx, Folsom, CA, USA]"],"affiliations":[{"raw_affiliation_string":"Numonyx Folsom, CA","institution_ids":[]},{"raw_affiliation_string":"[Numonyx, Folsom, CA, USA]","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041489539","display_name":"Gerald Barkley","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Gerald Barkley","raw_affiliation_strings":["Numonyx Folsom, CA","[Numonyx, Folsom, CA, USA]"],"affiliations":[{"raw_affiliation_string":"Numonyx Folsom, CA","institution_ids":[]},{"raw_affiliation_string":"[Numonyx, Folsom, CA, USA]","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013689252","display_name":"Hari Giduturi","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hari Giduturi","raw_affiliation_strings":["Numonyx Folsom, CA","[Numonyx, Folsom, CA, USA]"],"affiliations":[{"raw_affiliation_string":"Numonyx Folsom, CA","institution_ids":[]},{"raw_affiliation_string":"[Numonyx, Folsom, CA, USA]","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083522930","display_name":"S. Schippers","orcid":"https://orcid.org/0000-0002-6166-7138"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Stefan Schippers","raw_affiliation_strings":["Numonyx, Anrate Brianza, Italy","[Numonyx, Agrate-Brianza, Italy]"],"affiliations":[{"raw_affiliation_string":"Numonyx, Anrate Brianza, Italy","institution_ids":[]},{"raw_affiliation_string":"[Numonyx, Agrate-Brianza, Italy]","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5050079985","display_name":"Daniele Vimercati","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Daniele Vimercati","raw_affiliation_strings":["Numonyx, Agrate Brianza, Italy","[Numonyx, Agrate-Brianza, Italy]"],"affiliations":[{"raw_affiliation_string":"Numonyx, Agrate Brianza, Italy","institution_ids":[]},{"raw_affiliation_string":"[Numonyx, Agrate-Brianza, Italy]","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5043961350"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":5.8758,"has_fulltext":false,"cited_by_count":101,"citation_normalized_percentile":{"value":0.97111663,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":100},"biblio":{"volume":null,"issue":null,"first_page":"270","last_page":"271"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9904000163078308,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10590","display_name":"Chalcogenide Semiconductor Thin Films","score":0.9764999747276306,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/chalcogenide","display_name":"Chalcogenide","score":0.6354383230209351},{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.6011509299278259},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.5767624378204346},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5514841079711914},{"id":"https://openalex.org/keywords/phase-change-memory","display_name":"Phase-change memory","score":0.5098966360092163},{"id":"https://openalex.org/keywords/non-volatile-random-access-memory","display_name":"Non-volatile random-access memory","score":0.482245534658432},{"id":"https://openalex.org/keywords/electronics","display_name":"Electronics","score":0.42515021562576294},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.3752281367778778},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.36387866735458374},{"id":"https://openalex.org/keywords/phase-change","display_name":"Phase change","score":0.29127490520477295},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.2623969316482544},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.25175297260284424},{"id":"https://openalex.org/keywords/computer-memory","display_name":"Computer memory","score":0.23471039533615112},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.2109280228614807},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.16307011246681213},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1607528030872345},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.16004040837287903},{"id":"https://openalex.org/keywords/memory-refresh","display_name":"Memory refresh","score":0.14156895875930786}],"concepts":[{"id":"https://openalex.org/C2778177714","wikidata":"https://www.wikidata.org/wiki/Q898920","display_name":"Chalcogenide","level":2,"score":0.6354383230209351},{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.6011509299278259},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.5767624378204346},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5514841079711914},{"id":"https://openalex.org/C64142963","wikidata":"https://www.wikidata.org/wiki/Q1153902","display_name":"Phase-change memory","level":3,"score":0.5098966360092163},{"id":"https://openalex.org/C34172316","wikidata":"https://www.wikidata.org/wiki/Q499024","display_name":"Non-volatile random-access memory","level":5,"score":0.482245534658432},{"id":"https://openalex.org/C138331895","wikidata":"https://www.wikidata.org/wiki/Q11650","display_name":"Electronics","level":2,"score":0.42515021562576294},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.3752281367778778},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.36387866735458374},{"id":"https://openalex.org/C133256868","wikidata":"https://www.wikidata.org/wiki/Q7180940","display_name":"Phase change","level":2,"score":0.29127490520477295},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.2623969316482544},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.25175297260284424},{"id":"https://openalex.org/C92855701","wikidata":"https://www.wikidata.org/wiki/Q5830907","display_name":"Computer memory","level":3,"score":0.23471039533615112},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.2109280228614807},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.16307011246681213},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1607528030872345},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.16004040837287903},{"id":"https://openalex.org/C87907426","wikidata":"https://www.wikidata.org/wiki/Q6815755","display_name":"Memory refresh","level":4,"score":0.14156895875930786}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isscc.2010.5433916","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2010.5433916","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2010 IEEE International Solid-State Circuits Conference - (ISSCC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure","score":0.49000000953674316}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W2081642146","https://openalex.org/W2110395205","https://openalex.org/W2111490320"],"related_works":["https://openalex.org/W1972678038","https://openalex.org/W2086937600","https://openalex.org/W1485591242","https://openalex.org/W1551436306","https://openalex.org/W4214773815","https://openalex.org/W2091588437","https://openalex.org/W2169710001","https://openalex.org/W1983958623","https://openalex.org/W2110995678","https://openalex.org/W2550153070"],"abstract_inverted_index":{"Floating-gate":[0],"Flash":[1],"memories":[2],"have":[3,108],"been":[4],"able":[5],"so":[6],"far":[7],"to":[8,19,42,83,91],"satisfy":[9],"the":[10,15,21,30,45,59,70,74,81,86,95,102,139,153,158],"market":[11,89,211],"requirements,":[12],"especially":[13],"for":[14,58,127,207],"portable":[16],"equipments,":[17],"and":[18,90,113,134,136,144,163,209,218],"be":[20,40,150],"mainstream":[22,93],"non-volatile":[23,176],"memory":[24,66,154,177],"(NVM)":[25],"technology":[26,68],"[1].":[27],"Projecting":[28],"into":[29],"next":[31,96],"decade,":[32],"though,":[33],"there":[34],"are":[35,201],"several":[36],"limitations":[37],"that":[38,78,107,200,227],"must":[39],"faced":[41],"further":[43],"scale":[44],"floating-gate":[46],"concept.":[47],"The":[48,195],"increasing":[49],"complexity":[50],"of":[51,61,73,104,124,132,160],"floating":[52],"gate":[53],"scaling":[54],"has":[55],"left":[56],"room":[57],"investigation":[60],"alternative":[62,76],"NVM":[63,88,133],"concepts.":[64],"Phase-change":[65],"(PCM)":[67],"is":[69,79,230],"only":[71],"one":[72],"proposed":[75],"technologies":[77],"demonstrating":[80],"capability":[82],"enter":[84],"in":[85,94],"broad":[87],"become":[92],"decade":[97],"[2].":[98],"PCM,":[99],"based":[100,178],"on":[101,179],"property":[103],"chalcogenide":[105],"materials":[106],"two":[109],"stable":[110],"states,":[111],"amorphous":[112],"crystalline,":[114],"with":[115,203,212],"different":[116],"electrical":[117],"resistivity":[118],"values,":[119],"provides":[120],"a":[121,142,145,171],"new":[122],"set":[123,226],"features":[125,131],"interesting":[126],"novel":[128],"applications,":[129],"combining":[130],"DRAM":[135],"being":[137],"at":[138],"same":[140],"time":[141],"sustaining":[143],"disruptive":[146],"technology.":[147],"PCM":[148],"can":[149],"exploited":[151],"by":[152],"system":[155],"resulting":[156],"from":[157],"convergence":[159],"consumer,":[161],"computer":[162],"communication":[164],"electronics.":[165],"In":[166],"this":[167],"paper,":[168],"we":[169],"present":[170],"read-while-write":[172],"45nm":[173],"[3]":[174],"1Gb":[175],"phase-change":[180],"Ge":[181],"<inf":[182,186,190],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[183,187,191],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>":[184,188],"Sb":[185],"Te":[189],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">5</inf>":[192],"(GST)":[193],"alloy.":[194],"device":[196],"implements":[197],"3":[198],"specifications":[199],"compatible":[202],"existing":[204],"NOR":[205],"products":[206],"embedded":[208],"wireless":[210],"no":[213],"mux,":[214],"address/data":[215],"mux":[216,220],"(ADMux)":[217],"address/address/data":[219],"(AADMux)":[221],"interfaces.":[222],"An":[223],"extended":[224],"command":[225],"allows":[228],"bit-alterability":[229],"also":[231],"included.":[232]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":5},{"year":2019,"cited_by_count":5},{"year":2018,"cited_by_count":5},{"year":2017,"cited_by_count":12},{"year":2016,"cited_by_count":13},{"year":2015,"cited_by_count":7},{"year":2014,"cited_by_count":12},{"year":2013,"cited_by_count":9},{"year":2012,"cited_by_count":12}],"updated_date":"2026-04-05T17:49:38.594831","created_date":"2025-10-10T00:00:00"}