{"id":"https://openalex.org/W2170944258","doi":"https://doi.org/10.1109/isscc.2009.4977521","title":"A 26dB-gain 100GHz Si/SiGe Cascaded Constructive-Wave Amplifier","display_name":"A 26dB-gain 100GHz Si/SiGe Cascaded Constructive-Wave Amplifier","publication_year":2009,"publication_date":"2009-02-01","ids":{"openalex":"https://openalex.org/W2170944258","doi":"https://doi.org/10.1109/isscc.2009.4977521","mag":"2170944258"},"language":"en","primary_location":{"id":"doi:10.1109/isscc.2009.4977521","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2009.4977521","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5024558404","display_name":"James F. Buckwalter","orcid":"https://orcid.org/0000-0002-9390-0897"},"institutions":[{"id":"https://openalex.org/I36258959","display_name":"University of California San Diego","ror":"https://ror.org/0168r3w48","country_code":"US","type":"education","lineage":["https://openalex.org/I36258959"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J.F. Buckwalter","raw_affiliation_strings":["University of California, San Diego, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of California, San Diego, CA, USA","institution_ids":["https://openalex.org/I36258959"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100617789","display_name":"Joo Young Kim","orcid":"https://orcid.org/0000-0001-5221-1123"},"institutions":[{"id":"https://openalex.org/I36258959","display_name":"University of California San Diego","ror":"https://ror.org/0168r3w48","country_code":"US","type":"education","lineage":["https://openalex.org/I36258959"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. Kim","raw_affiliation_strings":["University of California, San Diego, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of California, San Diego, CA, USA","institution_ids":["https://openalex.org/I36258959"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.7466,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.90847137,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"488","last_page":"489,489a"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10262","display_name":"Microwave Engineering and Waveguides","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.9959999918937683,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.7015439867973328},{"id":"https://openalex.org/keywords/bicmos","display_name":"BiCMOS","score":0.5440236330032349},{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.5347774028778076},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.5271703004837036},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.4503147602081299},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4183545708656311},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3912571668624878},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3518295884132385},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3422709107398987},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.23950150609016418},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.15717902779579163},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.10849979519844055},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.08140295743942261},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.08078578114509583}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.7015439867973328},{"id":"https://openalex.org/C62427370","wikidata":"https://www.wikidata.org/wiki/Q173416","display_name":"BiCMOS","level":4,"score":0.5440236330032349},{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.5347774028778076},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.5271703004837036},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.4503147602081299},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4183545708656311},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3912571668624878},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3518295884132385},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3422709107398987},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23950150609016418},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.15717902779579163},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.10849979519844055},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.08140295743942261},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.08078578114509583}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isscc.2009.4977521","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2009.4977521","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.46000000834465027,"display_name":"Industry, innovation and infrastructure","id":"https://metadata.un.org/sdg/9"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1904012764","https://openalex.org/W2018499584","https://openalex.org/W2088005433","https://openalex.org/W2137626090","https://openalex.org/W2172048588"],"related_works":["https://openalex.org/W1492027935","https://openalex.org/W2140183546","https://openalex.org/W1544173589","https://openalex.org/W2537721720","https://openalex.org/W1586292687","https://openalex.org/W1943862574","https://openalex.org/W2154960098","https://openalex.org/W2555993941","https://openalex.org/W2140681148","https://openalex.org/W2134003673"],"abstract_inverted_index":{"An":[0],"amplifier":[1,7,122],"topology":[2,103],"-":[3,9],"the":[4,51,70,89,92,97,101],"cascaded":[5,16,107],"constructive-wave":[6],"(CCWA)":[8],"that":[10,110],"combines":[11],"features":[12],"of":[13,40,55,79,96],"traveling-wave":[14,108],"and":[15,87,94],"amplifiers":[17],"for":[18],"millimeter-wave":[19],"applications":[20],"is":[21,25,84,104],"presented.":[22],"The":[23,32,42,53,119],"circuit":[24],"implemented":[26],"in":[27,116,132],"0.12":[28,133],"mum":[29,46,61,134],"SiGe":[30],"BiCMOS.":[31],"HBT":[33],"devices":[34],"have":[35],"f":[36],"<sub":[37],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[38,48,63],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">t</sub>":[39],"200GHz.":[41],"chip":[43],"measures":[44,59],"330x1000":[45],"<sup":[47,62],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[49,64],"including":[50],"pads.":[52],"area":[54,85],"a":[56,67,77],"single":[57,68],"stage":[58],"160times60":[60],".":[65],"Within":[66],"stage,":[69],"shielded":[71],"coplanar":[72],"transmission":[73],"line":[74],"meanders":[75],"through":[76],"length":[78],"220":[80],"mum.":[81],"This":[82],"structure":[83],"efficient":[86],"minimizes":[88],"distance":[90],"between":[91],"input":[93],"output":[95],"stage.":[98],"In":[99],"conclusion,":[100],"CCWA":[102],"based":[105],"on":[106],"stages":[109],"offer":[111],"wideband":[112],"gain":[113,127],"previously":[114],"unachievable":[115],"silicon":[117],"technologies.":[118],"26":[120],"dB":[121,125],"provides":[123],"7":[124],"more":[126],"than":[128],"recent":[129],"W-band":[130],"work":[131],"SiGe.":[135]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2018,"cited_by_count":2}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}