{"id":"https://openalex.org/W2026508988","doi":"https://doi.org/10.1109/isscc.2009.4977315","title":"A 1.1V 50mW 2.5GS/s 7b Time-Interleaved C-2C SAR ADC in 45nm LP digital CMOS","display_name":"A 1.1V 50mW 2.5GS/s 7b Time-Interleaved C-2C SAR ADC in 45nm LP digital CMOS","publication_year":2009,"publication_date":"2009-02-01","ids":{"openalex":"https://openalex.org/W2026508988","doi":"https://doi.org/10.1109/isscc.2009.4977315","mag":"2026508988"},"language":"en","primary_location":{"id":"doi:10.1109/isscc.2009.4977315","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2009.4977315","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5060170109","display_name":"Erkan Alpman","orcid":null},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]},{"id":"https://openalex.org/I74973139","display_name":"Carnegie Mellon University","ror":"https://ror.org/05x2bcf33","country_code":"US","type":"education","lineage":["https://openalex.org/I74973139"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"E. Alpman","raw_affiliation_strings":["Carnegie Mellon University, Pittsburgh, PA, USA","Intel, Hillsboro, OR, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Carnegie Mellon University, Pittsburgh, PA, USA","institution_ids":["https://openalex.org/I74973139"]},{"raw_affiliation_string":"Intel, Hillsboro, OR, USA","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002626327","display_name":"Hasnain Lakdawala","orcid":null},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H. Lakdawala","raw_affiliation_strings":["Intel, Hillsboro, OR, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Intel, Hillsboro, OR, USA","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074369885","display_name":"L.R. Carley","orcid":null},"institutions":[{"id":"https://openalex.org/I74973139","display_name":"Carnegie Mellon University","ror":"https://ror.org/05x2bcf33","country_code":"US","type":"education","lineage":["https://openalex.org/I74973139"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"L.R. Carley","raw_affiliation_strings":["Carnegie Mellon University, Pittsburgh, PA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Carnegie Mellon University, Pittsburgh, PA, USA","institution_ids":["https://openalex.org/I74973139"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5062357544","display_name":"K. Soumyanath","orcid":null},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K. Soumyanath","raw_affiliation_strings":["Intel, Hillsboro, OR, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Intel, Hillsboro, OR, USA","institution_ids":["https://openalex.org/I1343180700"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":36.4854,"has_fulltext":false,"cited_by_count":127,"citation_normalized_percentile":{"value":0.99941207,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":100},"biblio":{"volume":null,"issue":null,"first_page":"76","last_page":"77,77a"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/successive-approximation-adc","display_name":"Successive approximation ADC","score":0.7608633041381836},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7089732885360718},{"id":"https://openalex.org/keywords/comparator","display_name":"Comparator","score":0.6506339907646179},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.6158992052078247},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6095797419548035},{"id":"https://openalex.org/keywords/offset","display_name":"Offset (computer science)","score":0.6068987250328064},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5217341184616089},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.4525664150714874},{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.4442756175994873},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.36166369915008545},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2583692669868469},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.201555997133255},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1409207284450531},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.13455155491828918}],"concepts":[{"id":"https://openalex.org/C60154766","wikidata":"https://www.wikidata.org/wiki/Q2650458","display_name":"Successive approximation ADC","level":4,"score":0.7608633041381836},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7089732885360718},{"id":"https://openalex.org/C155745195","wikidata":"https://www.wikidata.org/wiki/Q1164179","display_name":"Comparator","level":3,"score":0.6506339907646179},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.6158992052078247},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6095797419548035},{"id":"https://openalex.org/C175291020","wikidata":"https://www.wikidata.org/wiki/Q1156822","display_name":"Offset (computer science)","level":2,"score":0.6068987250328064},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5217341184616089},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.4525664150714874},{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.4442756175994873},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.36166369915008545},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2583692669868469},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.201555997133255},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1409207284450531},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.13455155491828918},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C77088390","wikidata":"https://www.wikidata.org/wiki/Q8513","display_name":"Database","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isscc.2009.4977315","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2009.4977315","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7300000190734863,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W1976807891","https://openalex.org/W2081870816","https://openalex.org/W2143326453"],"related_works":["https://openalex.org/W2278942241","https://openalex.org/W2368405386","https://openalex.org/W1977749038","https://openalex.org/W2080773395","https://openalex.org/W2099626417","https://openalex.org/W2019514496","https://openalex.org/W1641489184","https://openalex.org/W2136440001","https://openalex.org/W2085450379","https://openalex.org/W2135250276"],"abstract_inverted_index":{"High-speed":[0],"medium-resolution":[1],"ADCs":[2,42,48],"are":[3,29,49],"widely":[4],"utilized":[5],"in":[6,31,67],"high-speed":[7,41,100],"communication":[8],"systems,":[9],"such":[10],"as":[11],"serial":[12],"links,":[13],"UWB,":[14],"and":[15,24,61,69,113,116,121],"OFDM-based":[16],"60":[17],"GHz":[18],"receivers.":[19],"Due":[20],"to":[21,52,56,63,103,124],"complex":[22],"DSP":[23],"low-power":[25],"constraints,":[26],"digital":[27],"basebands":[28],"designed":[30],"low-leakage,":[32],"high-VTlow-power":[33],"(LP)":[34],"CMOS":[35],"processes":[36],"making":[37],"the":[38,64],"design":[39],"of":[40,71],"challenging.":[43],"Time-Interleaved":[44],"(Tl)":[45],"successive-approximation-register-based":[46],"(SAR)":[47],"ideally":[50],"suited":[51],"these":[53],"applications":[54],"due":[55,62],"their":[57],"highly":[58],"scalable":[59],"architecture":[60,94],"steady":[65],"improvement":[66],"matching":[68],"density":[70],"metal-finger":[72],"capacitors":[73],"(MFC).":[74],"This":[75],"paper":[76],"presents":[77],"a":[78,90],"Tl":[79,126],"C-2C":[80,92],"SAR":[81,93],"ADC":[82],"that":[83],"achieves":[84],"high":[85,105],"performance":[86],"by":[87],"using:":[88],"(1)":[89],"small-area":[91],"with":[95],"low":[96],"input":[97],"capacitance;":[98],"(2)":[99],"boosted":[101],"switches":[102],"overcome":[104],"device":[106],"threshold;":[107],"(3)":[108],"background":[109],"comparator":[110],"offset":[111,120],"calibration":[112,123],"radix":[114],"calibration;":[115],"(4)":[117],"redundant-ADC-based":[118],"gain,":[119],"timing":[122],"reduce":[125],"errors.":[127]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":5},{"year":2018,"cited_by_count":4},{"year":2017,"cited_by_count":12},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":6},{"year":2014,"cited_by_count":18},{"year":2013,"cited_by_count":11},{"year":2012,"cited_by_count":13}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}