{"id":"https://openalex.org/W2066698193","doi":"https://doi.org/10.1109/isscc.2008.4523231","title":"Compact In-Situ Sensors for Monitoring Negative-Bias-Temperature-Instability Effect and Oxide Degradation","display_name":"Compact In-Situ Sensors for Monitoring Negative-Bias-Temperature-Instability Effect and Oxide Degradation","publication_year":2008,"publication_date":"2008-02-01","ids":{"openalex":"https://openalex.org/W2066698193","doi":"https://doi.org/10.1109/isscc.2008.4523231","mag":"2066698193"},"language":"en","primary_location":{"id":"doi:10.1109/isscc.2008.4523231","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2008.4523231","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5053857493","display_name":"Eric Karl","orcid":null},"institutions":[{"id":"https://openalex.org/I27837315","display_name":"University of Michigan","ror":"https://ror.org/00jmfr291","country_code":"US","type":"education","lineage":["https://openalex.org/I27837315"]},{"id":"https://openalex.org/I4210130704","display_name":"University of Michigan\u2013Dearborn","ror":"https://ror.org/035wtm547","country_code":"US","type":"education","lineage":["https://openalex.org/I4210130704"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"E. Karl","raw_affiliation_strings":["University of Michigan, Dearborn, Ann Arbor, MI, USA","University of Michigan,Ann Arbor,MI"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Michigan, Dearborn, Ann Arbor, MI, USA","institution_ids":["https://openalex.org/I4210130704"]},{"raw_affiliation_string":"University of Michigan,Ann Arbor,MI","institution_ids":["https://openalex.org/I27837315"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059533616","display_name":"Prashant Singh","orcid":"https://orcid.org/0000-0002-4846-554X"},"institutions":[{"id":"https://openalex.org/I27837315","display_name":"University of Michigan","ror":"https://ror.org/00jmfr291","country_code":"US","type":"education","lineage":["https://openalex.org/I27837315"]},{"id":"https://openalex.org/I4210130704","display_name":"University of Michigan\u2013Dearborn","ror":"https://ror.org/035wtm547","country_code":"US","type":"education","lineage":["https://openalex.org/I4210130704"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"P. Singh","raw_affiliation_strings":["University of Michigan, Dearborn, Ann Arbor, MI, USA","University of Michigan,Ann Arbor,MI"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Michigan, Dearborn, Ann Arbor, MI, USA","institution_ids":["https://openalex.org/I4210130704"]},{"raw_affiliation_string":"University of Michigan,Ann Arbor,MI","institution_ids":["https://openalex.org/I27837315"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026311377","display_name":"David Blaauw","orcid":"https://orcid.org/0000-0001-6744-7075"},"institutions":[{"id":"https://openalex.org/I27837315","display_name":"University of Michigan","ror":"https://ror.org/00jmfr291","country_code":"US","type":"education","lineage":["https://openalex.org/I27837315"]},{"id":"https://openalex.org/I4210130704","display_name":"University of Michigan\u2013Dearborn","ror":"https://ror.org/035wtm547","country_code":"US","type":"education","lineage":["https://openalex.org/I4210130704"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. Blaauw","raw_affiliation_strings":["University of Michigan, Dearborn, Ann Arbor, MI, USA","University of Michigan,Ann Arbor,MI"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Michigan, Dearborn, Ann Arbor, MI, USA","institution_ids":["https://openalex.org/I4210130704"]},{"raw_affiliation_string":"University of Michigan,Ann Arbor,MI","institution_ids":["https://openalex.org/I27837315"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5000767141","display_name":"Dennis Sylvester","orcid":"https://orcid.org/0000-0003-2598-0458"},"institutions":[{"id":"https://openalex.org/I27837315","display_name":"University of Michigan","ror":"https://ror.org/00jmfr291","country_code":"US","type":"education","lineage":["https://openalex.org/I27837315"]},{"id":"https://openalex.org/I4210130704","display_name":"University of Michigan\u2013Dearborn","ror":"https://ror.org/035wtm547","country_code":"US","type":"education","lineage":["https://openalex.org/I4210130704"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. Sylvester","raw_affiliation_strings":["University of Michigan, Dearborn, Ann Arbor, MI, USA","University of Michigan,Ann Arbor,MI"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Michigan, Dearborn, Ann Arbor, MI, USA","institution_ids":["https://openalex.org/I4210130704"]},{"raw_affiliation_string":"University of Michigan,Ann Arbor,MI","institution_ids":["https://openalex.org/I27837315"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":22.7727,"has_fulltext":false,"cited_by_count":115,"citation_normalized_percentile":{"value":0.99850954,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"410","last_page":"623"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.8835328221321106},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.7601881623268127},{"id":"https://openalex.org/keywords/overhead","display_name":"Overhead (engineering)","score":0.6604442596435547},{"id":"https://openalex.org/keywords/in-situ","display_name":"In situ","score":0.4942310154438019},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.47204291820526123},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.46925613284111023},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4566534757614136},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4191586673259735},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.3801969885826111},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.32771390676498413},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.29298296570777893},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.20965436100959778},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19901591539382935},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.18752366304397583},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.12293803691864014}],"concepts":[{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.8835328221321106},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.7601881623268127},{"id":"https://openalex.org/C2779960059","wikidata":"https://www.wikidata.org/wiki/Q7113681","display_name":"Overhead (engineering)","level":2,"score":0.6604442596435547},{"id":"https://openalex.org/C2777822432","wikidata":"https://www.wikidata.org/wiki/Q216681","display_name":"In situ","level":2,"score":0.4942310154438019},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.47204291820526123},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.46925613284111023},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4566534757614136},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4191586673259735},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.3801969885826111},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.32771390676498413},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.29298296570777893},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.20965436100959778},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19901591539382935},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.18752366304397583},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.12293803691864014},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isscc.2008.4523231","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2008.4523231","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W73121609","https://openalex.org/W1592779097","https://openalex.org/W2142548152","https://openalex.org/W2164047446","https://openalex.org/W2543567411"],"related_works":["https://openalex.org/W2374313965","https://openalex.org/W2157278395","https://openalex.org/W1991431227","https://openalex.org/W2059440611","https://openalex.org/W3143610959","https://openalex.org/W2100282217","https://openalex.org/W2905252662","https://openalex.org/W1815542355","https://openalex.org/W2152540334","https://openalex.org/W4289655666"],"abstract_inverted_index":{"The":[0,71,92],"NBTI":[1,11,28,66],"sensor":[2,29],"proposed":[3],"is":[4],"intended":[5],"to":[6,21,34,54,80,100],"be":[7,95],"used":[8],"for":[9,36],"general":[10],"characterization":[12],"and":[13,42,61,67,89,105],"not":[14],"in-":[15],"situ":[16],"monitoring":[17],"of":[18,27,46,63,74,108],"degradation,":[19],"due":[20],"large":[22,98],"area":[23,26,88],"overhead":[24],"(~450x":[25],"in":[30,59,82,97],"this":[31],"work),":[32],"inability":[33],"correct":[35],"temperature":[37],"variations":[38],"encountered":[39],"during":[40],"operation":[41],"the":[43,47,57,75,109],"analog":[44],"output":[45],"sensor.":[48],"We":[49],"introduce":[50],"two":[51],"compact":[52],"structures":[53],"digitally":[55],"quantify":[56],"change":[58],"performance":[60,107],"power":[62,90],"devices":[64],"undergoing":[65],"defect-induced":[68],"oxide":[69],"breakdown.":[70],"small":[72],"size":[73],"sensors":[76,93],"makes":[77],"them":[78],"amenable":[79],"use":[81],"a":[83],"standard-cell":[84],"design":[85],"with":[86],"low":[87],"overhead.":[91],"can":[94],"implemented":[96],"numbers":[99],"collect":[101],"data":[102],"on":[103],"degradation":[104],"statistical":[106],"devices.":[110]},"counts_by_year":[{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":4},{"year":2018,"cited_by_count":6},{"year":2017,"cited_by_count":4},{"year":2016,"cited_by_count":5},{"year":2015,"cited_by_count":5},{"year":2014,"cited_by_count":10},{"year":2013,"cited_by_count":11},{"year":2012,"cited_by_count":9}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}