{"id":"https://openalex.org/W2091595381","doi":"https://doi.org/10.1109/isscc.2008.4523219","title":"A 100nm Double-Stacked 500MHz 72Mb Separate-I/O Synchronous SRAM with Automatic Cell-Bias Scheme and Adaptive Block Redundancy","display_name":"A 100nm Double-Stacked 500MHz 72Mb Separate-I/O Synchronous SRAM with Automatic Cell-Bias Scheme and Adaptive Block Redundancy","publication_year":2008,"publication_date":"2008-02-01","ids":{"openalex":"https://openalex.org/W2091595381","doi":"https://doi.org/10.1109/isscc.2008.4523219","mag":"2091595381"},"language":"en","primary_location":{"id":"doi:10.1109/isscc.2008.4523219","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2008.4523219","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5050861404","display_name":"Kyomin Sohn","orcid":"https://orcid.org/0000-0002-8094-9843"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Kyomin Sohn","raw_affiliation_strings":["Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","[Samsung Electron., Suwon]"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"[Samsung Electron., Suwon]","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101626810","display_name":"Young-Ho Suh","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Young-Ho Suh","raw_affiliation_strings":["Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","[Samsung Electron., Suwon]"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"[Samsung Electron., Suwon]","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109204408","display_name":"Young-Jae Son","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Young-Jae Son","raw_affiliation_strings":["Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","[Samsung Electron., Suwon]"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"[Samsung Electron., Suwon]","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085946890","display_name":"Dae-Sik Yim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dae-Sik Yim","raw_affiliation_strings":["Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","[Samsung Electron., Suwon]"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"[Samsung Electron., Suwon]","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011206823","display_name":"Kang-Young Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kang-Young Kim","raw_affiliation_strings":["Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","[Samsung Electron., Suwon]"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"[Samsung Electron., Suwon]","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109856641","display_name":"Dae-Gi Bae","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dae-Gi Bae","raw_affiliation_strings":["Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","[Samsung Electron., Suwon]"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"[Samsung Electron., Suwon]","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062762555","display_name":"Ted Kang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Ted Kang","raw_affiliation_strings":["Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","[Samsung Electron., Suwon]"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"[Samsung Electron., Suwon]","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005674224","display_name":"Hoon Lim","orcid":"https://orcid.org/0000-0002-9251-0192"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hoon Lim","raw_affiliation_strings":["Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","[Samsung Electron., Suwon]"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"[Samsung Electron., Suwon]","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109129841","display_name":"Soon\u2010Moon Jung","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Soon-Moon Jung","raw_affiliation_strings":["Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","[Samsung Electron., Suwon]"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"[Samsung Electron., Suwon]","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077048613","display_name":"Hyun-Geun Byun","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyun-Geun Byun","raw_affiliation_strings":["Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","[Samsung Electron., Suwon]"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"[Samsung Electron., Suwon]","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112318178","display_name":"Young-Hyun Jun","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Young-Hyun Jun","raw_affiliation_strings":["Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","[Samsung Electron., Suwon]"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"[Samsung Electron., Suwon]","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101769965","display_name":"Kinam Kim","orcid":"https://orcid.org/0000-0002-7517-588X"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kinam Kim","raw_affiliation_strings":["Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","[Samsung Electron., Suwon]"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Company Limited, Hwasung, Kyonggi, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"[Samsung Electron., Suwon]","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":12,"corresponding_author_ids":["https://openalex.org/A5050861404"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":0.6659,"has_fulltext":false,"cited_by_count":15,"citation_normalized_percentile":{"value":0.72769495,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"386","last_page":"622"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.8072577118873596},{"id":"https://openalex.org/keywords/redundancy","display_name":"Redundancy (engineering)","score":0.7262024879455566},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6105532646179199},{"id":"https://openalex.org/keywords/cache","display_name":"Cache","score":0.5838601589202881},{"id":"https://openalex.org/keywords/application-specific-integrated-circuit","display_name":"Application-specific integrated circuit","score":0.5120747685432434},{"id":"https://openalex.org/keywords/process-variation","display_name":"Process variation","score":0.45617908239364624},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.414251446723938},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.38969576358795166},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.38799601793289185},{"id":"https://openalex.org/keywords/parallel-computing","display_name":"Parallel computing","score":0.3791671395301819},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3469381332397461},{"id":"https://openalex.org/keywords/process","display_name":"Process (computing)","score":0.2527943551540375},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.1855449080467224},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17563432455062866},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.07768577337265015}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.8072577118873596},{"id":"https://openalex.org/C152124472","wikidata":"https://www.wikidata.org/wiki/Q1204361","display_name":"Redundancy (engineering)","level":2,"score":0.7262024879455566},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6105532646179199},{"id":"https://openalex.org/C115537543","wikidata":"https://www.wikidata.org/wiki/Q165596","display_name":"Cache","level":2,"score":0.5838601589202881},{"id":"https://openalex.org/C77390884","wikidata":"https://www.wikidata.org/wiki/Q217302","display_name":"Application-specific integrated circuit","level":2,"score":0.5120747685432434},{"id":"https://openalex.org/C93389723","wikidata":"https://www.wikidata.org/wiki/Q7247313","display_name":"Process variation","level":3,"score":0.45617908239364624},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.414251446723938},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.38969576358795166},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.38799601793289185},{"id":"https://openalex.org/C173608175","wikidata":"https://www.wikidata.org/wiki/Q232661","display_name":"Parallel computing","level":1,"score":0.3791671395301819},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3469381332397461},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.2527943551540375},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.1855449080467224},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17563432455062866},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.07768577337265015},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isscc.2008.4523219","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2008.4523219","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W1499787768","https://openalex.org/W1531033805","https://openalex.org/W1532026786","https://openalex.org/W2111066189"],"related_works":["https://openalex.org/W2119312496","https://openalex.org/W4247460323","https://openalex.org/W2537086382","https://openalex.org/W2107909712","https://openalex.org/W2153162275","https://openalex.org/W2079259690","https://openalex.org/W2132842408","https://openalex.org/W789543267","https://openalex.org/W2075972383","https://openalex.org/W2108986771"],"abstract_inverted_index":{"As":[0],"multi-core":[1],"processors":[2],"become":[3],"mainstream,":[4],"the":[5,28,36,68,83,103,123],"demand":[6],"for":[7,21,56,79,101,117,132],"high-density":[8],"cache":[9],"memories":[10],"has":[11],"increased.":[12],"Conventional":[13],"6T-cell-based":[14],"SRAMs":[15],"do":[16,26],"not":[17],"provide":[18],"enough":[19],"density":[20,37],"this":[22],"trend,":[23],"although":[24],"they":[25],"have":[27],"desirable":[29],"feature":[30],"of":[31,71,85,105],"high-speed":[32,63],"access.":[33],"To":[34],"overcome":[35],"limitation,":[38],"an":[39],"SRAM":[40,52,64,106],"using":[41,65],"a":[42,62,88],"double-":[43],"stacked":[44],"S":[45],"<sup":[46],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[47],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</sup>":[48],"(stacked":[49],"single-crystal":[50],"Si)":[51],"cell":[53,86,98,107,111,125],"was":[54],"introduced":[55],"mobile":[57],"applications.":[58],"This":[59],"work":[60],"demonstrates":[61],"double-stacked-cell.":[66],"From":[67],"process":[69],"point":[70],"view,":[72],"our":[73],"design":[74],"uses":[75],"fully":[76],"proven":[77],"technologies":[78],"mass":[80],"production":[81],"at":[82],"sacrifice":[84],"size.From":[87],"circuit-design":[89],"perspective,":[90],"three":[91],"schemes":[92],"are":[93,96],"introduced.":[94],"They":[95],"automatic":[97],"bias":[99],"(ACB)":[100],"managing":[102],"current":[104],"transistors":[108],"by":[109],"controlling":[110],"bias,":[112],"adaptive":[113],"block":[114],"redundancy":[115],"(ABR)":[116],"dealing":[118],"with":[119],"various":[120],"defects":[121],"from":[122],"new":[124],"technology,":[126],"and":[127],"wordline":[128,134],"pulse-width":[129,135],"regulation":[130],"(WPR)":[131],"adjusting":[133],"according":[136],"to":[137],"cycle":[138],"time.":[139]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":4},{"year":2012,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}