{"id":"https://openalex.org/W4396980830","doi":"https://doi.org/10.1109/isqed60706.2024.10528774","title":"Composite Sub-surface Model for RF GaN-HEMTs","display_name":"Composite Sub-surface Model for RF GaN-HEMTs","publication_year":2024,"publication_date":"2024-04-03","ids":{"openalex":"https://openalex.org/W4396980830","doi":"https://doi.org/10.1109/isqed60706.2024.10528774"},"language":"en","primary_location":{"id":"doi:10.1109/isqed60706.2024.10528774","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/isqed60706.2024.10528774","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 25th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101851241","display_name":"Xing Zhou","orcid":"https://orcid.org/0000-0003-2509-6726"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"X. Zhou","raw_affiliation_strings":["Nanyang Technological University,School of EEE,Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nanyang Technological University,School of EEE,Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045236951","display_name":"Weifeng Yang","orcid":"https://orcid.org/0000-0001-9067-8103"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"W. Yang","raw_affiliation_strings":["Nanyang Technological University,School of EEE,Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nanyang Technological University,School of EEE,Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5033708105","display_name":"Siau Ben Chiah","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"S. B. Chiah","raw_affiliation_strings":["New Silicon Corporation Pte Ltd,Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"New Silicon Corporation Pte Ltd,Singapore","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.03757701,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9799000024795532,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9799000024795532,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10262","display_name":"Microwave Engineering and Waveguides","score":0.9280999898910522,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9067000150680542,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/composite-number","display_name":"Composite number","score":0.6908929944038391},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6698505282402039},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6241543889045715},{"id":"https://openalex.org/keywords/radio-frequency","display_name":"Radio frequency","score":0.6068764328956604},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.5479608774185181},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.4448707103729248},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.4423788785934448},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.4393921196460724},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3454400897026062},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2520829439163208},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.23588156700134277},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12724536657333374},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.10867500305175781},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.08046847581863403}],"concepts":[{"id":"https://openalex.org/C104779481","wikidata":"https://www.wikidata.org/wiki/Q50707","display_name":"Composite number","level":2,"score":0.6908929944038391},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6698505282402039},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6241543889045715},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.6068764328956604},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.5479608774185181},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.4448707103729248},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.4423788785934448},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.4393921196460724},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3454400897026062},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2520829439163208},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.23588156700134277},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12724536657333374},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10867500305175781},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.08046847581863403}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isqed60706.2024.10528774","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/isqed60706.2024.10528774","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 25th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.44999998807907104,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320311649","display_name":"Ministry of Education","ror":"https://ror.org/036nq5137"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W3209950509","https://openalex.org/W4377089489","https://openalex.org/W4388207625","https://openalex.org/W1975307200","https://openalex.org/W3088454288","https://openalex.org/W4313611767","https://openalex.org/W4385217635","https://openalex.org/W2613044742","https://openalex.org/W2466508933"],"abstract_inverted_index":{"A":[0],"new":[1],"approach":[2,88],"to":[3,31,84,89],"RF":[4,90],"compact":[5],"modeling":[6],"with":[7,42,57,73,95],"a":[8,86],"\u201csub-surface":[9],"model\u201d":[10],"for":[11,25],"the":[12,18,32,50],"nonlinear":[13],"substrate":[14],"current/charge":[15],"(rather":[16],"than":[17],"conventional":[19],"linear":[20],"R/C":[21],"sub-circuit)":[22],"is":[23,28,79],"proposed":[24],"GaN-HEMTs,":[26],"which":[27],"also":[29,80],"extended":[30],"source/drain":[33],"(S/D)":[34],"access":[35],"regions":[36],"as":[37,60,62],"ungated":[38],"HEMTs.":[39],"By":[40],"comparison":[41],"numerical":[43],"device":[44],"N-parameters,":[45],"preliminary":[46],"results":[47],"show":[48],"that":[49],"composite":[51],"sub-circuit":[52],"model":[53],"demonstrates":[54],"good":[55],"matching":[56],"scalable":[58,98],"dc-biases":[59],"well":[61],"gate":[63],"and":[64,67,77,93,97],"S/D":[65],"lengths":[66],"body":[68],"doping":[69],"concentrations.":[70],"Model":[71],"verification":[72],"experimental":[74],"devices":[75],"(105nm":[76],"40nm)":[78],"given.":[81],"It":[82],"proves":[83],"be":[85],"useful":[87],"circuit":[91],"design":[92],"optimization":[94],"physical":[96],"predictability.":[99]},"counts_by_year":[],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}