{"id":"https://openalex.org/W2942307756","doi":"https://doi.org/10.1109/isqed.2019.8697877","title":"Drive-Strength Selection for Synthesis of Leakage-Dominant Circuits","display_name":"Drive-Strength Selection for Synthesis of Leakage-Dominant Circuits","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2942307756","doi":"https://doi.org/10.1109/isqed.2019.8697877","mag":"2942307756"},"language":"en","primary_location":{"id":"doi:10.1109/isqed.2019.8697877","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2019.8697877","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"20th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102980295","display_name":"Mahfuzul Islam","orcid":"https://orcid.org/0000-0002-5011-4044"},"institutions":[{"id":"https://openalex.org/I22299242","display_name":"Kyoto University","ror":"https://ror.org/02kpeqv85","country_code":"JP","type":"education","lineage":["https://openalex.org/I22299242"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"A.K.M. Mahfuzul Islam","raw_affiliation_strings":["Department of Electrical Engineering, Kyoto University, Kyoto, Japan"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Kyoto University, Kyoto, Japan","institution_ids":["https://openalex.org/I22299242"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042142715","display_name":"Shinichi Nishizawa","orcid":"https://orcid.org/0000-0002-1172-7286"},"institutions":[{"id":"https://openalex.org/I72253084","display_name":"Saitama University","ror":"https://ror.org/02evnh647","country_code":"JP","type":"education","lineage":["https://openalex.org/I72253084"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shinichi Nishizawa","raw_affiliation_strings":["Graduate School of Science and Engineering, Saitama University, Saitama, Japan"],"affiliations":[{"raw_affiliation_string":"Graduate School of Science and Engineering, Saitama University, Saitama, Japan","institution_ids":["https://openalex.org/I72253084"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103144232","display_name":"Yusuke Matsui","orcid":"https://orcid.org/0000-0003-3977-4313"},"institutions":[{"id":"https://openalex.org/I162282272","display_name":"ROHM","ror":"https://ror.org/00vttj605","country_code":"JP","type":"company","lineage":["https://openalex.org/I162282272"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yusuke Matsui","raw_affiliation_strings":["ROHM Corporation, Kyoto, Japan"],"affiliations":[{"raw_affiliation_string":"ROHM Corporation, Kyoto, Japan","institution_ids":["https://openalex.org/I162282272"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5024442336","display_name":"Yoshinobu Ichida","orcid":null},"institutions":[{"id":"https://openalex.org/I162282272","display_name":"ROHM","ror":"https://ror.org/00vttj605","country_code":"JP","type":"company","lineage":["https://openalex.org/I162282272"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yoshinobu Ichida","raw_affiliation_strings":["ROHM Corporation, Kyoto, Japan"],"affiliations":[{"raw_affiliation_string":"ROHM Corporation, Kyoto, Japan","institution_ids":["https://openalex.org/I162282272"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5102980295"],"corresponding_institution_ids":["https://openalex.org/I22299242"],"apc_list":null,"apc_paid":null,"fwci":0.3577,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.59584952,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"298","last_page":"303"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13182","display_name":"Quantum-Dot Cellular Automata","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/1703","display_name":"Computational Theory and Mathematics"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.8040503859519958},{"id":"https://openalex.org/keywords/sleep-mode","display_name":"Sleep mode","score":0.7541478872299194},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.6120046377182007},{"id":"https://openalex.org/keywords/leakage-power","display_name":"Leakage power","score":0.5591485500335693},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5369915962219238},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.49045416712760925},{"id":"https://openalex.org/keywords/standard-cell","display_name":"Standard cell","score":0.4786173701286316},{"id":"https://openalex.org/keywords/duty-cycle","display_name":"Duty cycle","score":0.4410736560821533},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.43243715167045593},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.41565680503845215},{"id":"https://openalex.org/keywords/efficient-energy-use","display_name":"Efficient energy use","score":0.41449329257011414},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.40416911244392395},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.3685295581817627},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3244122266769409},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.28967833518981934},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.28726011514663696},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.22518125176429749},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.17892605066299438},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.14526689052581787},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08009397983551025}],"concepts":[{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.8040503859519958},{"id":"https://openalex.org/C57149124","wikidata":"https://www.wikidata.org/wiki/Q587346","display_name":"Sleep mode","level":4,"score":0.7541478872299194},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.6120046377182007},{"id":"https://openalex.org/C2987719587","wikidata":"https://www.wikidata.org/wiki/Q1811428","display_name":"Leakage power","level":4,"score":0.5591485500335693},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5369915962219238},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.49045416712760925},{"id":"https://openalex.org/C78401558","wikidata":"https://www.wikidata.org/wiki/Q464496","display_name":"Standard cell","level":3,"score":0.4786173701286316},{"id":"https://openalex.org/C199822604","wikidata":"https://www.wikidata.org/wiki/Q557120","display_name":"Duty cycle","level":3,"score":0.4410736560821533},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.43243715167045593},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.41565680503845215},{"id":"https://openalex.org/C2742236","wikidata":"https://www.wikidata.org/wiki/Q924713","display_name":"Efficient energy use","level":2,"score":0.41449329257011414},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.40416911244392395},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.3685295581817627},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3244122266769409},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.28967833518981934},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.28726011514663696},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22518125176429749},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.17892605066299438},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.14526689052581787},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08009397983551025},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isqed.2019.8697877","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2019.8697877","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"20th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.9100000262260437}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W2013275447","https://openalex.org/W2017216250","https://openalex.org/W2043128052","https://openalex.org/W2076654948","https://openalex.org/W2090890076","https://openalex.org/W2112173236","https://openalex.org/W2119935308","https://openalex.org/W2167566128","https://openalex.org/W2236048664","https://openalex.org/W3142623134","https://openalex.org/W6669880274"],"related_works":["https://openalex.org/W2368674508","https://openalex.org/W2155436096","https://openalex.org/W3139630586","https://openalex.org/W2125414987","https://openalex.org/W2153081350","https://openalex.org/W3208532083","https://openalex.org/W1992827499","https://openalex.org/W2556750699","https://openalex.org/W4236748610","https://openalex.org/W2002284362"],"abstract_inverted_index":{"For":[0],"a":[1,17,35,54,96,101,142,159],"highly":[2,67],"duty-cycled":[3,68],"IoT":[4],"device,":[5],"the":[6,11,21,31,61,72,108,112,130],"circuit":[7,27,103],"spends":[8],"most":[9],"of":[10,57,95,144,147],"time":[12],"in":[13,111,125],"sleep":[14],"mode.":[15],"As":[16],"result,":[18],"leakage-energy":[19,62],"becomes":[20],"dominant":[22],"energy":[23],"consumption":[24],"source.":[25],"Therefore,":[26],"design":[28],"to":[29],"minimize":[30],"leakage-power":[32,148],"has":[33],"become":[34],"critical":[36],"issue.":[37],"The":[38,92],"state-of-the-art":[39],"standard-cell":[40,97],"library":[41,98,155],"is":[42,48],"optimized":[43],"for":[44,66],"high-performance":[45],"designs":[46],"and":[47,89,134],"power-hungry.":[49],"We":[50,114],"show":[51,141],"that":[52,100,157],"choosing":[53],"suitable":[55,73],"set":[56],"drive-strengths":[58],"can":[59,104],"reduce":[60],"by":[63],"order":[64],"magnitudes":[65],"devices.":[69],"To":[70],"realize":[71],"set,":[74],"cells":[75,110],"with":[76,107,119,149,158],"larger":[77],"gate-lengths":[78],"or":[79],"stacked":[80],"devices":[81],"are":[82],"essential":[83],"although":[84],"they":[85],"increase":[86],"cell":[87],"area":[88],"gate":[90],"capacitance.":[91],"holistic":[93],"property":[94],"ensures":[99],"better":[102],"be":[105],"synthesized":[106],"slow":[109],"library.":[113,164],"have":[115],"compared":[116],"two":[117],"libraries":[118],"one":[120],"being":[121,132],"\u201cthin":[122,161],"&":[123,153,162],"dense\u201d":[124,163],"its":[126],"drive-strength":[127],"varieties,":[128],"while":[129],"other":[131],"fat":[133],"sparse.":[135],"Synthesis":[136],"results":[137],"using":[138],"ISCAS\u201885":[139],"circuits":[140],"maximum":[143],"1/5":[145],"reduction":[146],"our":[150],"proposed":[151],"\u201cfat":[152],"sparse\u201d":[154],"than":[156],"conventional":[160]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}
