{"id":"https://openalex.org/W2941407424","doi":"https://doi.org/10.1109/isqed.2019.8697786","title":"Impact of Self-heating on Performance and Reliability in FinFET and GAAFET Designs","display_name":"Impact of Self-heating on Performance and Reliability in FinFET and GAAFET Designs","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2941407424","doi":"https://doi.org/10.1109/isqed.2019.8697786","mag":"2941407424"},"language":"en","primary_location":{"id":"doi:10.1109/isqed.2019.8697786","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2019.8697786","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"20th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5069179438","display_name":"Vidya A. Chhabria","orcid":"https://orcid.org/0000-0002-3273-0724"},"institutions":[{"id":"https://openalex.org/I130238516","display_name":"University of Minnesota","ror":"https://ror.org/017zqws13","country_code":"US","type":"education","lineage":["https://openalex.org/I130238516"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Vidya A. Chhabria","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN","institution_ids":["https://openalex.org/I130238516"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5068714995","display_name":"Sachin S. Sapatnekar","orcid":"https://orcid.org/0000-0002-5353-2364"},"institutions":[{"id":"https://openalex.org/I130238516","display_name":"University of Minnesota","ror":"https://ror.org/017zqws13","country_code":"US","type":"education","lineage":["https://openalex.org/I130238516"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sachin S. Sapatnekar","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN","institution_ids":["https://openalex.org/I130238516"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5069179438"],"corresponding_institution_ids":["https://openalex.org/I130238516"],"apc_list":null,"apc_paid":null,"fwci":1.4476,"has_fulltext":false,"cited_by_count":34,"citation_normalized_percentile":{"value":0.82196034,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"235","last_page":"240"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electromigration","display_name":"Electromigration","score":0.8962448239326477},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7305356860160828},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.7146165370941162},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6713070869445801},{"id":"https://openalex.org/keywords/hot-carrier-injection","display_name":"Hot-carrier injection","score":0.6442058682441711},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5731939077377319},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.5342795848846436},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.5254353880882263},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5184952020645142},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5102241039276123},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.5054066181182861},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.4593755006790161},{"id":"https://openalex.org/keywords/circuit-reliability","display_name":"Circuit reliability","score":0.4492829144001007},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.43910109996795654},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4350263476371765},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.3350751996040344},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.22194382548332214},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17167165875434875},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.11617985367774963},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.09036996960639954},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.07377132773399353}],"concepts":[{"id":"https://openalex.org/C138055206","wikidata":"https://www.wikidata.org/wiki/Q1319010","display_name":"Electromigration","level":2,"score":0.8962448239326477},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7305356860160828},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.7146165370941162},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6713070869445801},{"id":"https://openalex.org/C73500089","wikidata":"https://www.wikidata.org/wiki/Q2445876","display_name":"Hot-carrier injection","level":4,"score":0.6442058682441711},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5731939077377319},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.5342795848846436},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.5254353880882263},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5184952020645142},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5102241039276123},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.5054066181182861},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4593755006790161},{"id":"https://openalex.org/C2778309119","wikidata":"https://www.wikidata.org/wiki/Q5121614","display_name":"Circuit reliability","level":4,"score":0.4492829144001007},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.43910109996795654},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4350263476371765},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.3350751996040344},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.22194382548332214},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17167165875434875},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.11617985367774963},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09036996960639954},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.07377132773399353},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isqed.2019.8697786","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2019.8697786","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"20th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8299999833106995}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W1500087500","https://openalex.org/W1596337225","https://openalex.org/W1712776550","https://openalex.org/W2006619614","https://openalex.org/W2026520195","https://openalex.org/W2043440527","https://openalex.org/W2086871118","https://openalex.org/W2095436398","https://openalex.org/W2164178706","https://openalex.org/W2343296407","https://openalex.org/W2346205343","https://openalex.org/W2403892707","https://openalex.org/W2525736734","https://openalex.org/W2531820054","https://openalex.org/W2540335859","https://openalex.org/W2540962972","https://openalex.org/W2603725946","https://openalex.org/W2785433663","https://openalex.org/W3147111312","https://openalex.org/W4206436503","https://openalex.org/W6684298975"],"related_works":["https://openalex.org/W1970920853","https://openalex.org/W2102295724","https://openalex.org/W2099679924","https://openalex.org/W2007694591","https://openalex.org/W2738622559","https://openalex.org/W2120314645","https://openalex.org/W4393217857","https://openalex.org/W2043496087","https://openalex.org/W2803645833","https://openalex.org/W2328978473"],"abstract_inverted_index":{"Modern":[0],"transistors":[1],"such":[2],"as":[3],"FinFETs":[4],"and":[5,19,40,53,57,65,67,75,92,111,121,126,143],"gate-all-around":[6],"FETs":[7],"(GAAFETs)":[8],"suffer":[9],"from":[10],"excessive":[11],"heat":[12,84],"confinement":[13],"due":[14,106],"to":[15,25,107,117,132,138],"their":[16],"small":[17],"size":[18],"three-dimensional":[20],"geometries,":[21],"with":[22],"limited":[23],"paths":[24],"the":[26,46,50,129],"thermal":[27],"ambient.":[28],"This":[29,43,99],"results":[30],"in":[31,81,101,119,123,140,145],"device":[32],"self-heating,":[33],"which":[34],"can":[35],"reduce":[36],"speed,":[37],"increase":[38],"leakage,":[39],"accelerate":[41],"aging.":[42],"paper":[44],"characterizes":[45],"temperature":[47,70,102,109],"for":[48,88,95],"both":[49],"7nm":[51,89],"FinFET":[52,91,120,142],"5nm":[54,96],"GAAFET":[55,97,124,146],"sub-structures":[56],"analyzes":[58],"its":[59],"impact":[60],"on":[61],"circuit":[62,83],"performance":[63],"(delay":[64],"power)":[66],"reliability":[68],"(bias":[69],"instability,":[71],"hot":[72,112],"carrier":[73,113],"injection,":[74],"electromigration).":[76],"On":[77],"average,":[78],"logic":[79],"gates":[80],"a":[82],"up":[85,116,137],"by":[86,93,115,136],"12K":[87],"SOI":[90,141],"17K":[94],"designs.":[98],"rise":[100],"accelerates":[103],"delay":[104],"degradation":[105],"bias":[108],"instability":[110],"injection":[114],"25%":[118],"39%":[122],"designs,":[125],"also":[127],"degrades":[128],"electromigration-induced":[130],"time":[131],"failure":[133],"of":[134],"wires":[135],"38%":[139],"45%":[144],"technologies.":[147]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":8},{"year":2024,"cited_by_count":8},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":1}],"updated_date":"2026-03-26T15:22:09.906841","created_date":"2025-10-10T00:00:00"}