{"id":"https://openalex.org/W2940953418","doi":"https://doi.org/10.1109/isqed.2019.8697625","title":"Device Designs and Analog Performance Analysis for Negative-Capacitance Vertical-Tunnel FET","display_name":"Device Designs and Analog Performance Analysis for Negative-Capacitance Vertical-Tunnel FET","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2940953418","doi":"https://doi.org/10.1109/isqed.2019.8697625","mag":"2940953418"},"language":"en","primary_location":{"id":"doi:10.1109/isqed.2019.8697625","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2019.8697625","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"20th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101070628","display_name":"Hung-Han Lin","orcid":null},"institutions":[{"id":"https://openalex.org/I22265921","display_name":"National Central University","ror":"https://ror.org/00944ve71","country_code":"TW","type":"education","lineage":["https://openalex.org/I22265921"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Hung-Han Lin","raw_affiliation_strings":["Department of Electrical Engineering, National Central University, Taoyuan, Taiwan"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, National Central University, Taoyuan, Taiwan","institution_ids":["https://openalex.org/I22265921"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5083596674","display_name":"Vita Pi\u2010Ho Hu","orcid":"https://orcid.org/0000-0002-6216-214X"},"institutions":[{"id":"https://openalex.org/I22265921","display_name":"National Central University","ror":"https://ror.org/00944ve71","country_code":"TW","type":"education","lineage":["https://openalex.org/I22265921"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Vita Pi-Ho Hu","raw_affiliation_strings":["Department of Electrical Engineering, National Central University, Taoyuan, Taiwan"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, National Central University, Taoyuan, Taiwan","institution_ids":["https://openalex.org/I22265921"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5101070628"],"corresponding_institution_ids":["https://openalex.org/I22265921"],"apc_list":null,"apc_paid":null,"fwci":0.3577,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.59529098,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"241","last_page":"246"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.6579849720001221},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.5936856269836426},{"id":"https://openalex.org/keywords/transconductance","display_name":"Transconductance","score":0.513960063457489},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.4032413959503174},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3478024899959564},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3312418460845947},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.27201342582702637},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.13792195916175842},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.11504805088043213},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.07033517956733704}],"concepts":[{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.6579849720001221},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.5936856269836426},{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.513960063457489},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.4032413959503174},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3478024899959564},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3312418460845947},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.27201342582702637},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.13792195916175842},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11504805088043213},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.07033517956733704},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isqed.2019.8697625","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2019.8697625","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"20th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1600507069","https://openalex.org/W1979467415","https://openalex.org/W2016106189","https://openalex.org/W2129680670","https://openalex.org/W2523362864","https://openalex.org/W2525977156","https://openalex.org/W2580692283","https://openalex.org/W2785864841","https://openalex.org/W2792326849"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W2548900738","https://openalex.org/W2366149815","https://openalex.org/W2024541028","https://openalex.org/W2551134471","https://openalex.org/W2083133874","https://openalex.org/W4388044664","https://openalex.org/W1963878710","https://openalex.org/W2329220286","https://openalex.org/W2029313290"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"the":[3,34,49,109],"device":[4,22],"design":[5,23],"and":[6,62,80,130],"analog":[7],"performance":[8],"of":[9,24,56,104],"GaAsSb/InGaAs":[10],"negative-capacitance":[11],"vertical-tunnel":[12],"FET":[13],"(NCVT-FET)":[14],"are":[15],"analyzed":[16],"compared":[17,139],"with":[18,93],"TFET.":[19,141],"The":[20,54,69],"optimized":[21,70,110],"NCVT-FET":[25,71,111],"is":[26],"proposed":[27],"to":[28,48,140],"maximize":[29],"its":[30],"vertical":[31,40,51],"tunneling":[32,41,46],"over":[33,101],"corner":[35,45],"tunneling.":[36],"Negative":[37],"capacitance":[38],"enhances":[39],"more":[42],"significantly":[43],"than":[44],"due":[47],"amplified":[50],"electric":[52],"field.":[53],"impacts":[55],"source":[57],"overlap":[58],"length,":[59],"tunnel":[60],"layer,":[61],"N++":[63],"doping":[64],"concentration":[65],"have":[66],"been":[67],"investigated.":[68],"exhibits":[72],"small":[73],"I":[74,82],"<sub":[75,83,89,97,116,122,126,135],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[76,84,90,98,117,123,127,136],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">off</sub>":[77],"(10":[78],"pA/\u03bcm)":[79],"large":[81],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">on</sub>":[85],"(405\u03bcA/\u03bcm)":[86],"at":[87],"V":[88,96],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">DD</sub>":[91],"=0.5V":[92],"14mV/decade":[94],"sub":[95],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">t</sub>":[99],"swing":[100],"4":[102],"decades":[103],"current":[105],"were":[106],"obtained.":[107],"Moreover,":[108],"shows":[112],"higher":[113,120],"transconductance":[114],"g":[115,121],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">m,max</sub>":[118],"(+92%),":[119],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">m</sub>":[124],"/I":[125],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">DS</sub>":[128],",":[129],"larger":[131],"cutoff":[132],"frequency":[133],"f":[134],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">T,max</sub>":[137],"(+75%)":[138]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2021,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}