{"id":"https://openalex.org/W2942486122","doi":"https://doi.org/10.1109/isqed.2019.8697425","title":"Simulation Based Assessment of SRAM Data Retention Voltage","display_name":"Simulation Based Assessment of SRAM Data Retention Voltage","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2942486122","doi":"https://doi.org/10.1109/isqed.2019.8697425","mag":"2942486122"},"language":"en","primary_location":{"id":"doi:10.1109/isqed.2019.8697425","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2019.8697425","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"20th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5061517548","display_name":"Zhekang Dong","orcid":"https://orcid.org/0000-0003-4639-3834"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Z. Dong","raw_affiliation_strings":["GLOBALFOUNDRIES, Santa Clara, CA, USA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Santa Clara, CA, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101975636","display_name":"Xi Cao","orcid":"https://orcid.org/0000-0002-4911-7694"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"X. Cao","raw_affiliation_strings":["GLOBALFOUNDRIES, Santa Clara, CA, USA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Santa Clara, CA, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025385012","display_name":"Muhammed Ahosan Ul Karim","orcid":"https://orcid.org/0000-0003-2036-3960"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Ahosan Ul Karim","raw_affiliation_strings":["GLOBALFOUNDRIES, Santa Clara, CA, USA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Santa Clara, CA, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077419928","display_name":"Vivek Joshi","orcid":"https://orcid.org/0000-0002-1869-7569"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"V. Joshi","raw_affiliation_strings":["GLOBALFOUNDRIES, Santa Clara, CA, USA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Santa Clara, CA, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024355847","display_name":"T. Klick","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"T. Klick","raw_affiliation_strings":["GLOBALFOUNDRIES, Santa Clara, CA, USA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Santa Clara, CA, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5037457751","display_name":"J. Schmid","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. Schmid","raw_affiliation_strings":["GLOBALFOUNDRIES, Santa Clara, CA, USA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Santa Clara, CA, USA","institution_ids":["https://openalex.org/I35662394"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5061517548"],"corresponding_institution_ids":["https://openalex.org/I35662394"],"apc_list":null,"apc_paid":null,"fwci":0.3577,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.59593528,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"54","issue":null,"first_page":"98","last_page":"103"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.9260547161102295},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5314233303070068},{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.5109890699386597},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5035821795463562},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4945676028728485},{"id":"https://openalex.org/keywords/parametric-statistics","display_name":"Parametric statistics","score":0.4564336836338043},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.45496851205825806},{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.43451637029647827},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3637230396270752},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.346220463514328},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.29359352588653564}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.9260547161102295},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5314233303070068},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.5109890699386597},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5035821795463562},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4945676028728485},{"id":"https://openalex.org/C117251300","wikidata":"https://www.wikidata.org/wiki/Q1849855","display_name":"Parametric statistics","level":2,"score":0.4564336836338043},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.45496851205825806},{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.43451637029647827},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3637230396270752},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.346220463514328},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.29359352588653564},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isqed.2019.8697425","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isqed.2019.8697425","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"20th International Symposium on Quality Electronic Design (ISQED)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6499999761581421,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":26,"referenced_works":["https://openalex.org/W655609028","https://openalex.org/W1507078467","https://openalex.org/W1591261143","https://openalex.org/W1661368752","https://openalex.org/W1978130618","https://openalex.org/W2006292752","https://openalex.org/W2109458212","https://openalex.org/W2117648153","https://openalex.org/W2123009614","https://openalex.org/W2129938207","https://openalex.org/W2142718365","https://openalex.org/W2143442327","https://openalex.org/W2143901474","https://openalex.org/W2145136827","https://openalex.org/W2151043742","https://openalex.org/W2154477062","https://openalex.org/W2157210245","https://openalex.org/W2162613878","https://openalex.org/W2167981182","https://openalex.org/W2168101540","https://openalex.org/W2171922263","https://openalex.org/W2172203429","https://openalex.org/W2532574515","https://openalex.org/W2545471485","https://openalex.org/W4244758500","https://openalex.org/W6676534250"],"related_works":["https://openalex.org/W2204879205","https://openalex.org/W2096437374","https://openalex.org/W1943174035","https://openalex.org/W1928481607","https://openalex.org/W2108167458","https://openalex.org/W2023834321","https://openalex.org/W1785301911","https://openalex.org/W4295791092","https://openalex.org/W2765125965","https://openalex.org/W2128563080"],"abstract_inverted_index":{"With":[0],"the":[1,9,17,21,25,33,42,46,64,69,75,83,121,141,178,184,187],"continued":[2],"scaling":[3],"of":[4,16,41,45,55,59,88,125,130,144,186],"MOSFET":[5],"feature":[6],"size,":[7],"reducing":[8],"SoC":[10],"power":[11,49],"consumption":[12],"has":[13,38],"become":[14,39],"one":[15,40],"main":[18],"challenges":[19],"for":[20,68],"semiconductor":[22],"industry.":[23],"Lowering":[24],"data":[26,84,122,153],"retention":[27,85,123,154],"voltage":[28,86,124,155],"(Vret)":[29],"can":[30],"significantly":[31],"improve":[32],"SRAM":[34,56,70,92,126,145,189],"standby":[35],"power,":[36],"which":[37],"dominant":[43],"components":[44],"overall":[47,76],"system":[48],"consumption.":[50],"Therefore,":[51],"an":[52,135,198],"accurate":[53],"assessment":[54],"Vret":[57,66,142,203,226],"is":[58,94,117,147,156,164,205],"critical":[60],"importance":[61],"to":[62,104,119,159,201,216,222],"determine":[63],"lowest":[65],"specification":[67],"array":[71,93,146],"that":[72,110,152,166],"still":[73],"meets":[74],"product":[77],"yield":[78,185,227],"target.":[79],"In":[80],"this":[81,211],"work,":[82],"distribution":[87,143,204],"a":[89,224],"22nm":[90,188],"6T":[91],"studied":[95],"through":[96],"variation":[97],"aware":[98],"transient":[99],"SPICE":[100],"simulation":[101,116],"and":[102,149,170,195],"compared":[103],"Si":[105],"data.":[106],"The":[107,128,207],"results":[108],"show":[109],"parametric":[111],"device":[112],"variability":[113],"based":[114],"intrinsic":[115,194],"insufficient":[118],"estimate":[120],"array.":[127,190],"effect":[129],"gate":[131,137,160],"oxide":[132,161,168,175],"short":[133,169,176],"(GOS),":[134],"extrinsic":[136,181,196],"leakage":[138],"mechanism,":[139],"on":[140],"studied,":[148],"it":[150],"indicates":[151],"especially":[157],"sensitive":[158],"shorts.":[162],"It":[163],"shown":[165],"gate-drain":[167],"pull-down":[171],"(PD)":[172],"transistor":[173],"gate-source":[174],"are":[177],"most":[179],"probable":[180],"mechanisms":[182],"limiting":[183],"By":[191],"accounting":[192],"both":[193],"effects,":[197],"excellent":[199],"agreement":[200],"measured":[202],"demonstrated.":[206],"methodology":[208],"validated":[209],"in":[210],"work":[212],"could":[213],"be":[214],"applied":[215],"other":[217],"technology":[218],"nodes":[219],"as":[220],"well,":[221],"get":[223],"better":[225],"estimation.":[228]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}